MT4936 [ETC]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | MT4936 |
| 厂家： | 
ETC |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT
Mos-tech Semiconductor Corp
MT4936
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
● Super high dense cell design for low RDS(ON)
RDS(ON) (mΩ) Typ
55@ VGS=10V
60@ VGS=4.5V
VDSS
ID
● Rugged and reliable
● Simple drive requirement
● SO-8 package
25V
5.2A
NOTE：The MT4936 is available
in a lead-free package
ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
25
V
Gate-Source Voltage
VGS
ID
±20
5.2
V
A
Drain Current-Continuousª@Tj=125℃
- Pulse db
IDM
12
A
Drain-source Diode Forward Currentª
Maximum Power Dissipationª
Operating Junction and Storage
Temperature Range
IS
1.7
2.5
A
PD
W
TJ,TSTG
-55 to 150
℃
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
50
℃/W
http//www.mtsemi.com
1
MT4936
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS=0V,ID=-250µA
25
V
Zero Gate Voltage Drain Current
Gate-Body Leakage
VDS=20V,VGS=0V
VGS=±16V,VDS=0V
1
µA
IGSS
±100
nA
ON CHARACTERITICS
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250µA
VGS=10V,ID=5A
VGS=4.5V,ID=3.0A
VGS=5V,ID=5A
0.8
1.1
50
60
5
2.0
65
85
V
mΩ
S
Drain-Source On-State Resistance
RDS(ON)
ɡFS
Forward Transconductance
DAYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
586
101
59
pF
pF
pF
VDS=10V,VGS=0V
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISISTICS
Turn-On Delay Time
Rise Time
tD(ON)
tr
tD(OFF)
tf
6.5
32.1
58.4
48
ns
ns
VDD=10V
ID=15 A,
VGEN=4.5V
RL=10ohm
RGEN=10ohm
Turn-Off Delay Time
Fall Time
ns
ns
Qɡ
Total Gate Charge
6
nC
nC
nC
VDS=10V,ID=1A
VGS=4.5V
Qɡs
Qɡd
Gate-Source Charge
1.35
1.5
Gate-Drain Charge
http//www.mtsemi.com
2
MT4936
ELECTRICAL CHARACTERICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V,IS=1.25A
0.84
1.2
V
Notes
a. Surface Mounted on FR4 Board, t≦10sec
b. Pulse Test: Pulse Width≦300Us, Duty≦2%
c. Guaranteed by design, not subject to production testing.
VDS, Drain-to-Source Voltage (V)
Figure 1.Output Characteristics
VGS, Gate-to-source Voltage (V)
Figure 2.Transfer Characteristics
VGS=10V
ID=3A
VGS, Drain-to Source Voltage
Figure3.Capacitance
Figure4. On-Resistance Variation with
Temperature
http//www.mtsemi.com
3
MT4936
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VDS=VGS
ID=250uA
ID=250uA
0.6
--50 -25
0
25 50 75 100 125
--50 -25
0
25 50 75 100 125
Tj,. Junction Temperature(℃)
Figure5.Gate Threshold Variation
With Temperature
Tj, .Junction Temperature (℃)
Figure6.Breakdown Voltage Variation
With Temperature
21
18
15
12
9
20
10
6
3
1
0
Tj=25℃
VGS=5V
0
0
5
10
15
20
25
30
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Body Diode Forward Voltage
IDS, Drain-Source Current (A)
Figure8.Body Diode Forward Voltage
Variation with Source Current
Figure7.Transconductance Variation
With Drain Current
50
10
5
VDS=10V
ID=15A
4
3
2
1
0.1
0.03
0
0.1
1
10 20
50
0
2
4
6
8
10
12 14
Qɡ, Total Gate Charge(nC)
VDS, Drain-Source Voltage(V)
Figure9. Gate Charge
Figure10.Maximum Safe Operating Area
http//www.mtsemi.com
4
相关型号：
©2020 ICPDF网 联系我们和版权申明