MUR480E/D [ETC]

SWITCHMODE? Power Rectifiers ; 开关模式?电源整流器\n
MUR480E/D
型号: MUR480E/D
厂家: ETC    ETC
描述:

SWITCHMODE? Power Rectifiers
开关模式?电源整流器\n

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中文:  中文翻译
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MUR480E, MUR4100E  
SWITCHMODE  
Power Rectifiers  
Ultrafast “E’’ Series with High Reverse  
Energy Capability  
http://onsemi.com  
. . . designed for use in switching power supplies, inverters and as  
free wheeling diodes, these state–of–the–art devices have the  
following features:  
ULTRAFAST  
RECTIFIER  
4.0 AMPERES  
800–1000 VOLTS  
20 mJ Avalanche Energy Guaranteed  
Excellent Protection Against Voltage Transients in Switching  
Inductive Load Circuits  
Ultrafast 75 Nanosecond Recovery Time  
175°C Operating Junction Temperature  
Low Forward Voltage  
Low Leakage Current  
High Temperature Glass Passivated Junction  
Reverse Voltage to 1000 Volts  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 1.1 gram (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
220°C Max. for 10 Seconds, 1/16from case  
Shipped in plastic bags, 5,000 per bag  
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to  
the part number  
AXIAL LEAD  
CASE 267–03  
STYLE 1  
Polarity: Cathode indicated by Polarity Band  
Marking: MUR480E, MUR4100E  
MARKING DIAGRAM  
MUR4x0E  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
MUR4x0E = Device Code  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
V
V
V
RRM  
RWM  
x
= 8 or 10  
DC Blocking Voltage  
MUR480E  
MUR4100E  
V
R
800  
1000  
Average Rectified Forward Current  
(Square Wave)  
(Mounting Method #3 Per Note 2.)  
I
4.0 @  
T = 35°C  
A
A
A
F(AV)  
ORDERING INFORMATION  
Device  
Package  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Shipping  
Non–Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
70  
FSM  
MUR480E  
5000 Units/Bag  
1500/Tape & Reel  
5000 Units/Bag  
MUR480ERL  
MUR4100E  
MUR4100ERL  
Operating Junction and Storage  
Temperature Range  
T , T  
J
–65 to +175  
°C  
stg  
1500/Tape & Reel  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
October, 2000 – Rev. 0  
MUR480E/D  
MUR480E, MUR4100E  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Maximum Thermal Resistance, Junction to Case  
R
See Note 2.  
°C/W  
θ
JC  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Maximum Instantaneous Forward Voltage (Note 1.)  
v
Volts  
F
(i = 3.0 Amps, T = 150°C)  
1.53  
1.75  
1.85  
F
J
(i = 3.0 Amps, T = 25°C)  
F
J
(i = 4.0 Amps, T = 25°C)  
F
J
Maximum Instantaneous Reverse Current (Note 1.)  
(Rated dc Voltage, T = 100°C)  
i
R
µA  
900  
25  
J
(Rated dc Voltage, T = 25°C)  
J
Maximum Reverse Recovery Time  
t
rr  
ns  
(I = 1.0 Amp, di/dt = 50 Amp/µs)  
100  
75  
F
(I = 0.5 Amp, i = 1.0 Amp, I = 0.25 Amp)  
REC  
F
R
Maximum Forward Recovery Time  
t
fr  
75  
ns  
(I = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V)  
F
Controlled Avalanche Energy (See Test Circuit in Figure 6. )  
W
AVAL  
20  
mJ  
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.  
http://onsemi.com  
2
MUR480E, MUR4100E  
MUR480E, MUR4100E  
20  
1000  
400  
200  
100  
T = 175°C  
J
25°C  
T = 175°C  
J
40  
20  
10  
10  
7.0  
5.0  
100°C  
25°C  
100°C  
4.0  
2.0  
1.0  
0.4  
0.2  
0.1  
3.0  
2.0  
0.04  
0.02  
0.01  
0.004  
0.002  
0.001  
*The curves shown are typical for the highest voltage  
device in the voltage grouping. Typical reverse current  
for lower voltage selections can be estimated from these  
same curves if V is sufficiently below rated V  
R
.
R
0
100 200 300 400 500 600 700 800 900 1000  
1.0  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 2. Typical Reverse Current*  
0.7  
0.5  
10  
8.0  
6.0  
4.0  
0.3  
0.2  
Rated V  
R
R
q
= 28°C/W  
JA  
0.1  
0.07  
0.05  
dc  
SQUARE WAVE  
2.0  
0
0.03  
0.02  
0
50  
100  
150  
200  
250  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
1.6 1.8  
2
T , AMBIENT TEMPERATURE (°C)  
A
v INSTANTANEOUS VOLTAGE (VOLTS)  
F,  
Figure 3. Current Derating  
Figure 1. Typical Forward Voltage  
(Mounting Method #3 Per Note 1)  
10  
9.0  
8.0  
7.0  
6.0  
5.0  
70  
60  
T = 175°C  
J
50  
5.0  
40  
T = 25°C  
J
30  
20  
10  
I
(Capacitive  
Load)  
PK  
=20  
dc  
I
AV  
4.0  
3.0  
2.0  
SQUAREWAVE  
10  
9.0  
8.0  
1.0  
0
7.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
0
10  
20  
30  
40  
50  
V , REVERSE VOLTAGE (VOLTS)  
R
I
, AVERAGE FORWARD CURRENT (AMPS)  
F(AV)  
Figure 4. Power Dissipation  
Figure 5. Typical Capacitance  
http://onsemi.com  
3
MUR480E, MUR4100E  
+V  
DD  
I
L
40 mH COIL  
BV  
DUT  
V
D
I
D
MERCURY  
SWITCH  
I
D
I
L
DUT  
S
1
V
DD  
t
0
t
1
t
2
t
Figure 6. Test Circuit  
Figure 7. Current–Voltage Waveforms  
The unclamped inductive switching circuit shown in  
Figure 6. was used to demonstrate the controlled avalanche  
capability of the new “E’’ series Ultrafast rectifiers. A  
mercury switch was used instead of an electronic switch to  
simulate a noisy environment when the switch was being  
opened.  
component resistances. Assuming the component resistive  
elements are small Equation (1) approximates the total  
energy transferred to the diode. It can be seen from this  
equation that if the V  
voltage is low compared to the  
DD  
breakdown voltage of the device, the amount of energy  
contributed by the supply during breakdown is small and the  
total energy can be assumed to be nearly equal to the energy  
When S is closed at t the current in the inductor I ramps  
1
0
L
up linearly; and energy is stored in the coil. At t the switch  
stored in the coil during the time when S was closed,  
1
1
is opened and the voltage across the diode under test begins  
to rise rapidly, due to di/dt effects, when this induced voltage  
reaches the breakdown voltage of the diode, it is clamped at  
Equation (2).  
The oscilloscope picture in Figure 8. , shows the  
information obtained for the MUR8100E (similar die  
construction as the MUR4100E Series) in this test circuit  
conducting a peak current of one ampere at a breakdown  
voltage of 1300 volts, and using Equation (2) the energy  
absorbed by the MUR8100E is approximately 20 mjoules.  
Although it is not recommended to design for this  
condition, the new “E’’ series provides added protection  
against those unforeseen transient viruses that can produce  
unexplained random failures in unfriendly environments.  
BV  
and the diode begins to conduct the full load current  
DUT  
which now starts to decay linearly through the diode, and  
goes to zero at t .  
2
By solving the loop equation at the point in time when S  
1
is opened; and calculating the energy that is transferred to  
the diode it can be shown that the total energy transferred is  
equal to the energy stored in the inductor plus a finite amount  
of energy from the V power supply while the diode is in  
DD  
breakdown (from t to t ) minus any losses due to finite  
1
2
CHANNEL 2:  
I
EQUATION (1):  
CH1 500V  
CH2 50mV  
A
20ms  
953 V VERT  
L
0.5 AMPS/DIV.  
BV  
DUT  
2
1
W
[
LILPK ǒ Ǔ  
AVAL  
2
BV  
–V  
DUT DD  
CHANNEL 1:  
V
DUT  
500 VOLTS/DIV.  
EQUATION (2):  
2
LPK  
1
2
W
[
LI  
AVAL  
TIME BASE:  
20 ms/DIV.  
1
ACQUISITIONS  
SAVEREF SOURCE  
217:33 HRS  
STACK  
CH1  
CH2  
REF  
REF  
Figure 8. Current–Voltage Waveforms  
http://onsemi.com  
4
MUR480E, MUR4100E  
NOTE 2. – AMBIENT MOUNTING DATA  
Data shown for thermal resistance junction–to–ambient  
(R ) for the mountings shown is to be used as typical  
θJA  
guideline values for preliminary engineering or in case the  
tie point temperature cannot be measured.  
TYPICAL VALUES FOR R  
IN STILL AIR  
θ
JA  
Lead Length, L (IN)  
Mounting  
Method  
1/8  
50  
58  
1/4  
51  
59  
1/2  
53  
61  
3/4  
55  
63  
Units  
°C/W  
°C/W  
°C/W  
1
2
3
R
θ
JA  
28  
MOUNTING METHOD 1  
P.C. Board Where Available Copper  
Surface area is small.  
L
L
MOUNTING METHOD 2  
Vector Push–In Terminals T–28  
L
L
MOUNTING METHOD 3  
P.C. Board with  
1–1/2 x 1–1/2 Copper Surface  
L = 1/2″  
Board Ground Plane  
http://onsemi.com  
5
MUR480E, MUR4100E  
PACKAGE DIMENSIONS  
AXIAL LEAD  
CASE 267–03  
ISSUE E  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
K
D
2. CONTROLLING DIMENSION: INCH.  
1
2
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
9.40  
4.83  
1.22  
25.40  
MAX  
9.65  
5.33  
1.32  
---  
A
B
D
K
0.370  
0.190  
0.048  
1.000  
0.380  
0.210  
0.052  
---  
B
K
STYLE 1:  
PIN 1. CATHODE (POLARITY BAND)  
2. ANODE  
http://onsemi.com  
6
MUR480E, MUR4100E  
Notes  
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7
MUR480E, MUR4100E  
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
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Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
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EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
MUR480E/D  

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