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NGB18N40CLBT4/D [ETC]

Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) ; 点火IGBT在D2ak （第3代）与改进SCIS能源的VCE（on ）\n
NGB18N40CLBT4/D
型号： NGB18N40CLBT4/D
厂家： ETC    ETC
描述：

Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
点火IGBT在D2ak （第3代）与改进SCIS能源的VCE（on ）\n

双极性晶体管
文件： 总8页 (文件大小：75K)
中文：  中文翻译
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NGB18N40CLBT4  
Ignition IGBT  
18 Amps, 400 Volts  
N-Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Over-Voltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
• Ideal for Coil-on-Plug Applications  
• Gate-Emitter ESD Protection  
http://onsemi.com  
18 AMPS  
400 VOLTS  
VCE(on) 3 2.0 V @  
IC = 10 A, VGE . 4.5 V  
• Temperature Compensated Gate-Collector Voltage Clamp Limits  
Stress Applied to Load  
C
• Integrated ESD Diode Protection  
• New Design Increases Unclamped Inductive Switching (UIS) Energy  
Per Area  
R
G
G
• Low Threshold Voltage to Interface Power Loads to Logic or  
Microprocessor Devices  
R
GE  
• Low Saturation Voltage  
• High Pulsed Current Capability  
E
• Optional Gate Resistor (R ) and Gate-Emitter Resistor (R  
)
GE  
G
• Emitter Ballasting for Short-Circuit Capability  
2
4
D PAK  
CASE 418B  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
2
Rating  
Collector-Emitter Voltage  
Collector-Gate Voltage  
Gate-Emitter Voltage  
Symbol Value  
Unit  
3
V
CES  
V
CER  
430  
430  
18  
V
DC  
V
DC  
V
DC  
MARKING  
DIAGRAM  
V
GE  
4
Collector  
Collector Current-Continuous  
I
C
18  
50  
A
DC  
A
AC  
@ T = 25°C - Pulsed  
C
GB  
18N40B  
YWW  
ESD (Human Body Model)  
R = 1500 Ω, C = 100 pF  
ESD  
ESD  
kV  
8.0  
ESD (Machine Model) R = 0 Ω, C = 200 pF  
800  
V
1
Gate  
3
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
115  
0.77  
Watts  
W/°C  
C
Emitter  
2
Collector  
Operating and Storage Temperature Range  
T , T  
-55 to  
+175  
°C  
J
stg  
GB18N40B = NGB18N40CLB  
Y
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
Device  
Package  
Shipping  
2
NGB18N40CLBT4  
D PAK  
800/Tape & Reel  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
March, 2003 - Rev. 0  
NGB18N40CLB/D  
NGB18N40CLBT4  
UNCLAMPED COLLECTOR-T O-EMITTER AVALANCHE CHARACTERISTICS (-55° ≤ T ≤ 175°C)  
J
Characteristic  
Symbol  
Value  
Unit  
Single Pulse Collector-to-Emitter Avalanche Energy  
E
AS  
mJ  
V
CC  
V
CC  
= 50 V, V = 5.0 V, Pk I = 21.1 A, L = 1.8 mH, Starting T = 25°C  
400  
300  
GE  
L
J
= 50 V, V = 5.0 V, Pk I = 18.3 A, L = 1.8 mH, Starting T = 125°C  
GE  
L
J
Reverse Avalanche Energy  
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C  
E
AS(R)  
mJ  
V
CC  
2000  
GE  
L
J
MAXIMUM SHORT-CIRCUIT TIMES (-55°C ≤ T ≤ 150°C)  
J
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)  
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)  
THERMAL CHARACTERISTICS  
t
t
750  
5.0  
ms  
sc1  
ms  
sc2  
Thermal Resistance, Junction to Case  
R
1.3  
50  
°C/W  
°C/W  
°C  
θ
JC  
JA  
L
2
Thermal Resistance, Junction to Ambient  
D PAK (Note 1)  
R
θ
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds  
T
275  
ELECTRICAL CHARACTERISTICS  
Characteristic  
OFF CHARACTERISTICS  
Collector-Emitter Clamp Voltage  
Symbol  
Test Conditions  
Temperature  
Min  
Typ  
Max  
Unit  
BV  
T
T
= -40°C to  
150°C  
380  
390  
395  
405  
420  
430  
V
DC  
CES  
J
I
C
= 2.0 mA  
= 10 mA  
= -40°C to  
150°C  
J
I
C
T = 25°C  
-
-
2.0  
10  
1.0  
0.7  
12  
0.1  
33  
36  
32  
13  
20  
40*  
10  
Zero Gate Voltage Collector Current  
I
µA  
DC  
J
CES  
V
V
= 350 V,  
CE  
T = 150°C  
J
= 0 V  
GE  
T
J
= -40°C  
-
T = 25°C  
J
-
2.0  
25*  
1.0  
37  
Reverse Collector-Emitter Leakage Current  
Reverse Collector-Emitter Clamp Voltage  
I
mA  
ECS  
T = 150°C  
J
-
V
= -24 V  
CE  
T
J
= -40°C  
-
T = 25°C  
J
27  
30  
25  
11  
B
V
V
VCES(R)  
DC  
T = 150°C  
J
40  
I
C
= -75 mA  
= 5.0 mA  
T
J
= -40°C  
35  
Gate-Emitter Clamp Voltage  
Gate-Emitter Leakage Current  
Gate Resistor (Optional)  
Gate Emitter Resistor  
BV  
T
= -40°C to  
150°C  
15  
GES  
J
J
J
J
DC  
I
G
I
T
T
T
= -40°C to  
150°C  
384  
-
640  
70  
1000  
-
µA  
DC  
GES  
V
= 10 V  
GE  
R
= -40°C to  
150°C  
Ω
G
-
-
R
= -40°C to  
150°C  
10  
16  
26  
Ω
k
GE  
ON CHARACTERISTICS (Note 2)  
T = 25°C  
1.1  
0.75  
1.2  
-
1.4  
1.0  
1.6  
3.4  
1.9  
1.4  
2.1*  
-
Gate Threshold Voltage  
V
V
DC  
J
GE(th)  
I
= 1.0 mA,  
C
V
T = 150°C  
J
= V  
GE  
CE  
T
J
= -40°C  
Threshold Temperature Coefficient  
(Negative)  
-
-
-
mV/°C  
1. When surface mounted to an FR4 board using the minimum recommended pad size.  
2. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.  
*Maximum Value of Characteristic across Temperature Range.  
http://onsemi.com  
2
NGB18N40CLBT4  
ELECTRICAL CHARACTERISTICS (continued)  
Characteristic  
Symbol  
Test Conditions  
Temperature  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS (continued) (Note 3)  
T = 25°C  
1.0  
0.9  
1.1  
1.3  
1.2  
1.4  
1.4  
1.5  
1.4  
1.8  
2.0  
1.7  
1.3  
1.3  
1.4  
8.0  
1.4  
1.3  
1.45  
1.6  
1.55  
1.6  
1.8  
1.8  
1.8  
2.2  
2.4  
2.1  
1.8  
1.75  
1.8  
14  
1.6  
1.6  
Collector-to-Emitter On-Voltage  
V
V
J
CE(on)  
DC  
I
V
= 6.0 A,  
C
T = 150°C  
J
= 4.0 V  
GE  
T
J
= -40°C  
1.7*  
1.9*  
1.8  
T = 25°C  
J
I
C
= 8.0 A,  
T = 150°C  
J
V
= 4.0 V  
GE  
T
J
= -40°C  
1.9*  
2.05  
2.0  
T = 25°C  
J
I
V
= 10 A,  
C
T = 150°C  
J
= 4.0 V  
GE  
T
J
= -40°C  
2.1*  
2.5  
T = 25°C  
J
I
V
= 15 A,  
C
T = 150°C  
J
2.6*  
2.5  
= 4.0 V  
GE  
T
J
= -40°C  
T = 25°C  
J
2.0*  
2.0*  
2.0*  
25  
I
V
= 10 A,  
C
T = 150°C  
J
= 4.5 V  
GE  
T
J
= -40°C  
Forward Transconductance  
gfs  
V
= 5.0 V, I = 6.0 A  
T
= -40°C to  
150°C  
Mhos  
pF  
CE  
C
J
DYNAMIC CHARACTERISTICS  
Input Capacitance  
C
400  
50  
800  
75  
1000  
100  
10  
ISS  
T
= -40°C to  
150°C  
V
= 25 V, V = 0 V  
f = 1.0 MHz  
J
CC  
GE  
Output Capacitance  
C
C
OSS  
RSS  
Transfer Capacitance  
4.0  
7.0  
SWITCHING CHARACTERISTICS  
Turn-Of f Delay Time (Resistive)  
t
V
= 300 V, I = 6.5 A  
= 1.0 kΩ, R = 46 Ω,  
L
T = 25°C  
-
-
-
-
4.0  
9.0  
0.7  
4.5  
10  
15  
µSec  
µSec  
d(off)  
CC  
C
J
R
G
Fall Time (Resistive)  
Turn-On Delay Time  
Rise Time  
t
f
V
CC  
= 300 V, I = 6.5 A  
T = 25°C  
J
C
R
= 1.0 kΩ, R = 46 Ω,  
G
G
G
L
t
V
R
= 10 V, I = 6.5 A  
T = 25°C  
J
4.0  
7.0  
d(on)  
CC  
C
= 1.0 kΩ, R = 1.5 Ω  
L
t
r
V
R
= 10 V, I = 6.5 A  
T = 25°C  
J
CC  
C
= 1.0 kΩ, R = 1.5 Ω  
L
3. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.  
*Maximum Value of Characteristic across Temperature Range.  
http://onsemi.com  
3
NGB18N40CLBT4  
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)  
60  
50  
40  
30  
20  
10  
0
60  
V
= 10 V  
GE  
5 V  
V
GE  
= 10 V  
50  
40  
30  
20  
10  
0
5 V  
4.5 V  
4.5 V  
4 V  
T
J
= -40°C  
4 V  
T = 25°C  
J
3.5 V  
3.5 V  
3 V  
3 V  
2.5 V  
2.5 V  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE  
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)  
V
CE  
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)  
Figure 1. Output Characteristics  
Figure 2. Output Characteristics  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
60  
50  
40  
30  
20  
10  
0
V
GE  
= 10 V  
V
= 10 V  
CE  
T = 150°C  
T
J
= -40°C  
J
5 V  
T = 150°C  
J
4.5 V  
4 V  
T = 25°C  
J
3.5 V  
3 V  
2.5 V  
5
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE  
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)  
V
GE  
, GATE TO EMITTER VOLTAGE (VOLTS)  
Figure 3. Output Characteristics  
Figure 4. Transfer Characteristics  
4.0  
3.5  
3
T = 25°C  
J
V
= 5 V  
GE  
2.5  
I
= 25 A  
= 20 A  
= 15 A  
= 10 A  
= 5 A  
C
I
= 15 A  
= 10 A  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
C
I
C
2
1.5  
1
I
C
I
C
I
= 5 A  
C
I
C
I
C
0.5  
0
-50  
-25  
0
25  
50  
75  
100  
125 150  
3
4
5
6
7
8
9
10  
T , JUNCTION TEMPERATURE (°C)  
J
GATE-T O-EMITTER VOLTAGE (VOLTS)  
Figure 5. Collector-to-Emitter Saturation  
Voltage versus Junction Temperature  
Figure 6. Collector-to-Emitter Voltage versus  
Gate-to-Emitter Voltage  
http://onsemi.com  
4
NGB18N40CLBT4  
10000  
3
2.5  
2
T = 150°C  
J
C
iss  
I
= 15 A  
= 10 A  
= 5 A  
1000  
100  
10  
C
I
C
C
oss  
1.5  
1
I
C
C
rss  
1
0
0.5  
0
0
20  
40 60 80 100 120 140 160 180 200  
3
4
5
6
7
8
9
10  
GATE TO EMITTER VOLTAGE (VOLTS)  
V
CE  
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)  
Figure 7. Collector-to-Emitter Voltage versus  
Gate-to-Emitter Voltage  
Figure 8. Capacitance Variation  
30  
25  
20  
15  
10  
2
V
V
R
= 50 V  
= 5.0 V  
= 1000 Ω  
1.8  
1.6  
1.4  
1.2  
CC  
GE  
V
+ 4 σ  
TH  
V
TH  
G
V
- 4 σ  
L = 2 mH  
TH  
1
0.8  
0.6  
0.4  
L = 3 mH  
L = 6 mH  
5
0
0.2  
0
-50 -30 -10  
10  
30 50 70 90 110 130 150  
-50 -25  
0
25  
50  
75 100 125 150 175  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 9. Gate Threshold Voltage versus  
Temperature  
Figure 10. Minimum Open Secondary Latch  
Current versus Temperature  
12  
10  
8
30  
25  
20  
15  
10  
V
V
R
= 50 V  
= 5.0 V  
= 1000 Ω  
CC  
GE  
V
V
R
= 300 V  
= 5.0 V  
= 1000 Ω  
CC  
GE  
L = 2 mH  
L = 3 mH  
G
t
f
G
I
C
= 10 A  
L = 300 µH  
6
L = 6 mH  
t
d(off)  
4
2
0
5
0
-50 -25  
0
25  
50  
75 100 125 150 175  
-50 -30 -10  
10  
30  
50 70 90 110 130 150  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 11. Typical Open Secondary Latch  
Current versus Temperature  
Figure 12. Inductive Switching Fall Time  
versus Temperature  
http://onsemi.com  
5
NGB18N40CLBT4  
100  
10  
1
100  
DC  
DC  
10  
100 µs  
1 ms  
1
100 µs  
10 ms  
1 ms  
10 ms  
100 ms  
100  
0.1  
0.1  
100 ms  
0.01  
0.01  
1
10  
1000  
1
10  
100  
1000  
COLLECTOR-EMITTER VOLTAGE (VOLTS)  
COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 13. Single Pulse Safe Operating Area  
Figure 14. Single Pulse Safe Operating Area  
(Mounted on an Infinite Heatsink at TA = 255C)  
(Mounted on an Infinite Heatsink at TA = 1255C)  
100  
10  
1
100  
10  
1
t = 1 ms, D = 0.05  
1
t = 1 ms, D = 0.05  
1
t = 2 ms, D = 0.10  
1
t = 2 ms, D = 0.10  
1
t = 3 ms, D = 0.30  
1
t = 3 ms, D = 0.30  
1
0.1  
0.1  
0.01  
0.01  
1
10  
100  
1000  
1
10  
100  
1000  
COLLECTOR-EMITTER VOLTAGE (VOLTS)  
COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 15. Pulse Train Safe Operating Area  
Figure 16. Pulse Train Safe Operating Area  
(Mounted on an Infinite Heatsink at TC = 255C)  
(Mounted on an Infinite Heatsink at TC = 1255C)  
V
BATT  
= 16 V  
V
BATT  
= 16 V  
R = 0.1 W  
L
R = 0.1 W  
L
L = 10 mH  
L = 10 mH  
5.0 V  
V
IN  
R = 1 kW  
G
5.0 V  
V
IN  
R = 1 kW  
G
R
= 55 mW  
S
Figure 17. Circuit Configuration for  
Short Circuit Test #1  
Figure 18. Circuit Configuration for  
Short Circuit Test #2  
http://onsemi.com  
6
NGB18N40CLBT4  
100  
10  
Duty Cycle = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
1
0.1  
0.01  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
P
(pk)  
Single Pulse  
READ TIME AT t  
1
t
1
0.001  
0.0001  
t
T
- T = P  
R
(t)  
2
J(pk)  
A
(pk) qJA  
R
@ R(t) for t ≤ 0.2 s  
q
JC  
DUTY CYCLE, D = t /t  
1
2
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t,TIME (S)  
Figure 19. Transient Thermal Resistance  
(Non-normalized Junction-to-Ambient mounted on  
minimum pad area)  
http://onsemi.com  
7
NGB18N40CLBT4  
PACKAGE DIMENSIONS  
D2PAK  
CASE 418B-04  
ISSUE H  
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. 418B-01 THRU 418B-03 OBSOLETE,  
NEW STANDARD 418B-04.  
C
E
INCHES  
DIM MIN MAX  
MILLIMETERS  
V
W
MIN  
MAX  
-B-  
A
B
C
D
E
F
G
H
J
0.340 0.380  
0.380 0.405  
0.160 0.190  
0.020 0.035  
0.045 0.055  
0.310 0.350  
0.100 BSC  
8.64  
9.65  
4
9.65 10.29  
4.06  
0.51  
1.14  
7.87  
4.83  
0.89  
1.40  
8.89  
A
2.54 BSC  
S
1
2
3
0.080  
0.018 0.025  
0.090 0.110  
0.110  
2.03  
0.46  
2.29  
1.32  
7.11  
2.79  
0.64  
2.79  
1.83  
8.13  
K
L
0.052 0.072  
0.280 0.320  
0.197 REF  
-T-  
SEATING  
PLANE  
K
M
N
P
R
S
V
W
5.00 REF  
2.00 REF  
0.99 REF  
J
G
0.079 REF  
0.039 REF  
H
0.575 0.625 14.60 15.88  
0.045 0.055 1.14 1.40  
D 3 PL  
M
M
T B  
0.13 (0.005)  
STYLE 4:  
PIN 1. GATE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
ON Semiconductor and  
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
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NGB18N40CLB/D  

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