NP32N055HHE [ETC]


型号：	NP32N055HHE
厂家：	ETC
描述：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 32A I(D) \| TO-251AA 晶体管\| MOSFET \| N沟道\| 55V V（ BR ） DSS \| 32A I（ D） \| TO- 251AA\n 晶体晶体管开关脉冲
文件：	总8页 (文件大小：409K)
中文：	中文翻译
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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP32N055HHE, NP32N055IHE

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

These products are N-Channel MOS Field Effect

PART NUMBER

PACKAGE

TO-251

Transistors designed for high current switching applications.

NP32N055HHE

NP32N055IHE

TO-252

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)= 25 mΩ MAX. (V^GS= 10 V, I^D= 16 A)

• Low C^iss: C^iss= 1100 pF TYP.

• Built-in gate protection diode

(TO-251)

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Drain to Source Voltage

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

Gate to Source Voltage

Drain Current (DC)

100

1.2

Drain Current (Pulse) ^Note1

Total Power Dissipation (T^A= 25 °C)

Total Power Dissipation (T^C= 25 °C)

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Channel Temperature

(TO-252)

P^T

I^AS

26 / 21 / 7

6.7 / 44 / 49 mJ

175 °C

–55 to + 175 °C

E^AS

T^ch

Storage Temperature

T^stg

Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %

2. Starting T^ch= 25 °C, R^G= 25 Ω, V^GS= 20 V → 0 V (See Figure 4.)

THERMAL RESISTANCE

Channel to Case

R^th(ch-C)

R^th(ch-A)

2.27

125

°C/W

Channel to Ambient

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark # shows major revised points.

Document No.

Date Published March 2001 NS CP(K)

Printed in Japan

D14155EJ3V0DS00 (3rd edition)

1999

NP32N055HHE, NP32N055IHE

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

CHARACTERISTICS

Drain to Source On-state Resistance

Gate to Source Threshold Voltage

Forward Transfer Admittance

Drain Leakage Current

Gate to Source Leakage Current

Input Capacitance

SYMBOL

R^DS(on)

V^GS(th)

| y^fs|

I^DSS

TEST CONDITIONS

V^GS= 10 V, I^D= 16 A

MIN. TYP. MAX.

UNIT

mΩ

3.0

V^DS= V^GS, I^D= 250 µA

V^DS= 10 V, I^D= 16 A

V^DS= 55 V, V^GS= 0 V

V^GS= 20 V, V^DS= 0 V

V^DS= 25 V

2.0

4.0

µA

I^GSS

C^iss

1100 1600

Output Capacitance

C^oss

C^rss

V^GS= 0 V

180

270

170

Reverse Transfer Capacitance

Turn-on Delay Time

f = 1 MHz

t^d(on)

t^r

t^d(off)

t^f

I^D= 16 A

Rise Time

V^GS(on)= 10 V

V^DD= 28 V

Turn-off Delay Time

Fall Time

R^G= 1 Ω

Total Gate Charge

Q^G

I^D= 32 A

Gate to Source Charge

Gate to Drain Charge

Q^GS

Q^GD

V^F(S-D)

t^rr

V^DD= 44 V

V^GS= 10 V

Body Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I^F= 32 A, V^GS= 0 V

di/dt = 100 A/µs

1.0

Q^rr

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

= 25 Ω

90%

Wave Form

GS(on)

10%

90%

PG.

50 Ω

GS = 20→0V

BVDSS

10% 10%

Wave Form

VDS

d(on)

d(off)

VDD

toff

τ = 1 µs

Duty Cycle ≤ 1 %

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= 2 mA

PG.

50 Ω

Data Sheet D14155EJ3V0DS

NP32N055HHE, NP32N055IHE

TYPICAL CHARACTERISTICS (T^A= 25 °C)

Figure2. TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

Figure1. DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

100

25 50 75 100 125 150 175 200

- Case Temperature - ˚C

TC - Case Temperature - ˚C

Figure4. SINGLE AVALANCHE ENERGY

DERATING FACTOR

Figure3. FORWARD BIAS SAFE OPERATING AREA

1000

49 mJ

D(pulse)

1 ms

44 mJ

100

D(DC)

AS = 7 A

_PowerD_DiC_ssipation

Limited

21 A

26 A

6.7 mJ

= 25˚C

Single Pulse

0.1

100

125

150

175

Drain to Source Voltage - V

Starting T^ch- Starting Channel Temperature - ˚C

Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

Rth(ch-A) = 125 ˚C/W

100

Rth(ch-C) = 2.27 ˚C/W

0.1

0.01

Single Pulse

= 25˚C

1 m

10 m

100 m

100

1000

100

PW - Pulse Width - s

Data Sheet D14155EJ3V0DS

NP32N055HHE, NP32N055IHE

Figure7. DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

Figure6. FORWARD TRANSFER CHARACTERISTICS

120

100

Pulsed

GS =10 V

= −55˚C

25˚C

75˚C

150˚C

175˚C

0.1

DS = 10 V

0.01

1.0

2.0

3.0

4.0

5.0 6.0

VGS - Gate to Source Voltage - V

VDS - Drain to Source Voltage - V

Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

Figure8. FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

100

Pulsed

= 175˚C

75˚C

I = 16 A

0.1

25˚C

−55˚C

0.01

0.1

100

10 12 14 16 18 20

VGS - Gate to Source Voltage - V

ID - Drain Current - A

Figure10. DRAIN TO SOURCE ON-STATE

Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

RESISTANCE vs. DRAIN CURRENT

Pulsed

^Gµ^S

^D=^{S =}25^V0

4.0

3.0

2.0

GS = 10 V

1.0

100

−50

100

150

ID - Drain Current - A

Tch - Channel Temperature - ˚C

Data Sheet D14155EJ3V0DS

NP32N055HHE, NP32N055IHE

Figure13. SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

1000

100

Pulsed

VGS = 10 V

VGS = 0 V

= 16 A

150

ch - Channel Temperature - ˚C

0.1

100

−50

0.5

1.0

1.5

VSD

- Source to Drain Voltage - V

Figure14. CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

Figure15. SWITCHING CHARACTERISTICS

1000

100

10000

GS = 0 V

f = 1 MHz

iss

1000

td(off)

Coss

td(on)

100

Crss

0.1

100

0.1

100

- Drain Current - A

VDS - Drain to Source Voltage - V

Figure16. REVERSE RECOVERY TIME vs.

DRAIN CURRENT

Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000

100

di/dt = 100 A/µs

GS = 0 V

DD = 44 V

28 V

11 V

VDS

= 32 A

28 32

12 16 20 24

- Gate Charge - nC

0.1

1.0

100

- Drain Current - A

Data Sheet D14155EJ3V0DS

NP32N055HHE, NP32N055IHE

PACKAGE DRAWINGS (Unit : mm)

1)TO-251 (MP-3)

2)TO-252 (MP-3Z)

2.3 0.2

6.5 0.2

5.0 0.2

0.5 0.1

2.3 0.2

6.5 0.2

5.0 0.2

0.5 0.1

1.1 0.2

0.9 MAX.

2.3 TYP.

0.8 MAX.

2.3 TYP.

+0.2

−0.1

+0.2

0.8 TYP.

0.5

−0.1

2.3 TYP.

EQUIVALENT CIRCUIT

Drain

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Data Sheet D14155EJ3V0DS

NP32N055HHE, NP32N055IHE

[MEMO]

Data Sheet D14155EJ3V0DS

NP32N055HHE, NP32N055IHE

•

The information in this document is current as of March, 2001. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

•

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written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

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third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

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purposes in semiconductor product operation and application examples. The incorporation of these

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M8E 00. 4

NP32N055HHE [ETC]

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