NPDS5912 [ETC]
;
| 型号： | NPDS5912 |
| 厂家： | 
ETC |
| 描述： | 晶体 晶体管 光电二极管 放大器 |
| 文件： | 总23页 (文件大小：554K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Index of /ds/NP/
Name
Last modified
Size Description
Parent Directory
NPDS402.pdf
NPDS403.pdf
NPDS404.pdf
NPDS405.pdf
NPDS5565.pdf
NPDS5566.pdf
NPDS5911.pdf
NPDS5912.pdf
NPDS8301.pdf
NPDS8302.pdf
NPDS8303.pdf
22-Dec-99 00:13 123K
22-Dec-99 00:13 123K
22-Dec-99 00:13 123K
22-Dec-99 00:13 123K
22-Dec-99 00:13 130K
22-Dec-99 00:13 130K
22-Dec-99 00:13 121K
22-Dec-99 00:13 121K
22-Dec-99 00:13 109K
22-Dec-99 00:13 109K
22-Dec-99 00:13 109K
NPN_Epitaxial_Silicon+ 16-Apr-99 13:01 73K
Discr ete P OWER & Sign a l
Tech n ologies
NPDS402
NPDS403
NPDS404
NPDS406
S2
D2
NC
G2
G1
NC
D1
SO-8
S1
N-Channel General Purpose Dual Amplifier
Sourced from Process 98.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
50
50
V
V
VGS
IGF
10
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
1997 Fairchild Semiconductor Corporation
General Purpose Dual Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 50
- 0.5
V
IG = 1.0 µA, VDS = 0
VGS = 30 V, VDS = 0
VDS = 15 V, ID = 1.0 nA
VDG = 15 V, ID = 200 µA
IG = 1.0 µA, VDS = 0
IGSS
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
25
pA
V
VGS(off)
VGS
- 2.5
- 2.3
V
VG1 - G2
Voltage Gate 1-Gate 2
+ / - 50
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 10 V, VGS = 0
0.5
10
mA
SMALL SIGNAL CHARACTERISTICS
Common Source Forward
gfs
VDS = 10 V, VGS = 0, f = 1.0 kHz
VDS = 15 V, ID = 200µA, f = 1.0 kHz
2000
1000
7000
2000
20
µmhos
µmhos
µmhos
Transconductance
Common Source Output Conductance VDS = 10 V, VGS = 0, f = 1.0 kHz
goss
gos
Common Source Output
Conductance
VDS = 15 V, ID = 200µA, f = 1.0 kHz
2.0
8.0
3.0
µmhos
Input Capacitance
VDG = 15 V, ID = 200 µA,
f = 1.0 MHz
pF
Ciss
Crss
Reverse Transfer Capacitance
VDG = 15 V, I = 200 A,
pF
µ
D
f = 1.0 MHz
CMMR
Common Mode Rejection
Differential Match
95
dB
VDG = 10 to 20 V, ID = 200 µA
VGS1 - VGS2
VDG = 10 V, ID = 200 µA,
NPDS402
10
10
15
40
mV
mV
mV
mV
NPDS403
NPDS404
NPDS406
Differential Drift
∆VGS1 - VGS2
VDG = 10 V, ID = 200 µA,
TA = -55 to 25 °C
10
25
25
80
NPDS402
NPDS403
NPDS404
NPDS406
µV/°C
µV/°C
µV/°C
µV/°C
VDG = 10 V, ID = 200 µA
TA = 25 to 125 °C
10
25
25
80
NPDS402
NPDS403
NPDS404
NPDS406
µV/°C
µV/°C
µV/°C
µV/°C
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Parameter Interactions
Common Drain-Source
Transfer Characteristics
Transfer Characteristics
Gate Leakage Current vs. Voltage
Common Drain Source
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Forward Transconductance
vs. Drain Current
Output Conductance
vs. Drain Current
Transconductance vs.
Gate Source Voltage
Transconductance vs.
Gate Source Voltage
Capacitance vs.
Gate Source Voltage
Noise Voltage vs. Frequency
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Differential Offset
Differential Drift
CMRR vs. Drain Current
Discr ete P OWER & Sign a l
Tech n ologies
NPDS5565
NPDS5566
S2
D2
NC
G2
G1
NC
D1
SO-8
S1
N-Channel General Purpose Dual Amplifier
Sourced from Process 96.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
40
40
V
V
VGS
IGF
10
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
General Purpose Dual Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 40
V
IG = 1.0 µA, VDS = 0
IGSS
Gate Reverse Current
VGS = 20 V, VDS = 0
VGS = 20 V, VDS = 0, TA = 150 °C
VDS = 15 V, ID = 1.0 nA
100
200
- 3.0
pA
µA
V
VGS(off)
VGS(f)
Gate-Source Cutoff Voltage
Forward Gate-Source Voltage
Voltage Gate 1 - Gate 2
- 0.5
VDS = 0, ID = 2.0 mA
1.0
V
V
VG1 - G2
VDS = 0, IG = + / - 1.0 µA
+ / - 40
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, VGS = 0
ID = 1.0 mA, VGS = 0
5.0
30
mA
Drain-Source On Resistance
100
Ω
rDS(on)
SMALL SIGNAL CHARACTERISTICS
Common Source Forward
Transconductance
VDS = 15 V, ID = 2.0mA, f = 1.0 kHz
VDS = 15 V, ID = 2.0 mA,
f = 100 MHz
7500
7000
12,500
µmhos
µmhos
gfs
Common Source Output Conductance VDS = 15 V, ID = 2.0mA, f = 1.0 kHz
45
12
3.0
50
mhos
pF
goss
Ciss
Crss
en
µ
Input Capacitance
VDG = 15 V, ID = 2.0mA, f = 1.0MHz
VDS = 15 V, ID = 2.0mA, f = 1.0 kHz
VDG = 15 V, ID = 2.0 mA, f = 10 Hz
Reverse Transfer Capacitance
pF
Equivalent Short-Circuit Input
Noise Voltage
nV/√Hz
NF
Noise Figure
VDG = 15 V, ID = 2.0 mA, f = 10 Hz
RG = 1.0 mΩ
1.0
dB
IDSS1 - IDSS2 IDSS Match
VDS = 15 V, VGS = 0
5.0
10
%
%
VDS = 15 V, ID = 2.0mA, f = 1.0 kHz
gfs1 - gfs2
gfs Match
VGS1 - VGS2
Differential Match
VDG = 15 V, ID = 2.0 mA,
NPDS5565
10
20
mV
mV
NPDS5566
∆ VGS1 -VGS2 Differential Drift
VDS = 10 V, VGS = 0, f = 1.0 kHz
TA = 25 to 125 °C
NPDS5565
NPDS5566
25
50
µV/°C
µV/°C
VDG = 15 V, ID = 2.0 mA,
25
50
TA = -55 to 25 °C
NPDS5565
NPDS5566
µV/°C
µV/°C
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Parameter Interactions
Common Drain-Source
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Output Conductance
vs. Drain Current
Leakage Current vs. Voltage
Transconductance vs.
Drain Current
Noise Voltage vs. Frequency
Noise Voltage vs. Current
Capacitance vs. Voltage
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Differential Drift
Differential Offset
CMRR vs. Drain Current
Discr ete P OWER & Sign a l
Tech n ologies
NPDS5911
NPDS5912
S2
D2
NC
G2
G1
NC
D1
SO-8
S1
N-Channel General Purpose Dual Amplifier
Sourced from Process 93.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
25
25
V
V
VGS
IGF
10
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
General Purpose Dual Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 25
V
IG = 1.0 µA, VDS = 0
IGSS
Gate Reverse Current
VGS = 15 V, VDS = 0
VGS = 15 V, VDS = 0, TA = 150 °C
VDS = 10 V, ID = 1.0 nA
100
250
- 5.0
pA
nA
V
V
V
Gate-Source Cutoff Voltage
Gate-Source Voltage
- 1.0
- 0.3
VGS(off)
VGS
VDG = 10 V, ID = 5.0 mA
- 4.0
VG1 - G2
Voltage Gate 1 - Gate 2
VDS = 0, IG = + / - 1.0 µA
+ / - 25
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 10 V, VGS = 0
7.0
40
mA
SMALL SIGNAL CHARACTERISTICS
Common Source Forward
gfs
VDS = 10 V, ID = 5.0mA, f = 1.0 kHz
VDS = 10 V, ID = 5.0 mA,
f = 100 MHz
5000
5000
10,000
10,000
µmhos
µmhos
Transconductance
Common Source Output Conductance VDS = 10 V, ID = 5.0mA, f = 1.0 kHz
VDS = 10V, ID = 5.0mA, f = 100 MHz
100
150
5.0
µmhos
µmhos
pF
goss
Input Capacitance
VDG = 10 V, ID = 5.0mA, f =1.0 MHz
VDS = 10 V, ID = 5.0mA, f = 1.0 kHz
VDG = 10 V, ID = 5.0 mA, f = 10 kHz
Ciss
Crss
en
Reverse Transfer Capacitance
1.2
20
pF
Equivalent Short-Circuit Input
Noise Voltage
nV/√Hz
NF
Noise Figure
VDG = 10 V, ID = 5.0 mA, f = 10 kHz
1.0
dB
R = 100 k
Ω
G
IDSS1 -IDSS2
gfs1 - gfs2
IDSS Match
gfs Match
VDS = 10 V, VGS = 0
5.0
5.0
20
%
%
VDS = 10 V, ID = 5.0mA, f = 1.0 kHz
VDS = 10 V, ID = 5.0mA, f = 1.0 kHz
VDS = 10 V, ID = 5.0mA, TA = 125°C
µmhos
nA
goss1 -goss2 goss Match
IG1 - IG2
IG Match
20
VGS1 - VGS2
Differential Match
VDG = 10 V, ID = 5.0 mA,
NPDS5911
10
15
mV
mV
NPDS5912
∆VGS1 -VGS2 Differential Drift
VDG = 10 V, VGS = 0, ID = 5.0 mA,
20
40
TA = 25 to 125 °C
NPDS5911
NPDS5912
µV/°C
µV/°C
VDG = 10 V, ID = 5.0 mA,
TA = -55 to 25 °C NPDS5911
NPDS5912
20
40
µV/°C
µV/°C
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Parameter Interactions
Common Drain-Source
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Output Conductance
vs. Drain Current
Leakage Current vs. Voltage
Transconductance vs.
Drain Current
Noise Voltage vs. Frequency
Capacitance vs. Voltage
Differential Drift
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Differential Offset
CMRR vs. Drain Current
Discr ete P OWER & Sign a l
Tech n ologies
NPDS8301
NPDS8302
NPDS8303
S2
D2
NC
G2
G1
NC
D1
SO-8
S1
N-Channel General Purpose Dual Amplifier
Sourced from Process 83.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
40
40
V
V
VGS
IGF
10
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ , Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
General Purpose Dual Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 40
V
IG = 1.0 µA, VDS = 0
VGS = 20 V, VDS = 0
VDS = 20 V, ID = 1.0 nA
VDS = 20 V, ID = 200 µA
IGSS
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
100
- 3.5
- 3.5
pA
V
- 0.5
- 0.3
VGS(off)
VGS
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 20 V, VGS = 0
0.5
6.0
mA
SMALL SIGNAL CHARACTERISTICS
Common Source Forward
Transconductance
VDS = 20 V, VGS = 0, f = 1.0 kHz
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
1000
700
4000
1200
µmhos
µmhos
gfs
Common Source Output Conductance
goss
20
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
µmhos
µmhos
Common Source Output
Conductance
5.0
gos
VGS1 - VGS2
Differential Match
VDG = 20 V, ID = 200 µA,
NPDS8301
5.0
10
15
mV
mV
mV
NPDS8302
NPDS8303
Differential Drift
∆VGS1 - VGS2
VDS = 20 V, ID = 200 µA,
10
15
25
TA = 25 to 85 °C
NPDS8301
NPDS8302
NPDS8303
µV/°C
µV/°C
µV/°C
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
Typical Characteristics
Parameter Interactions
Common Drain-Source
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Transfer Characteristics
Transfer Characteristics
Channel Resistance
vs. Temperature
Leakage Current vs. Voltage
Noise Voltage vs. Frequency
Noise Voltage vs. Current
General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Output Conductance
vs. Drain Current
Transconductance vs.
Drain Current
Capacitance vs. Voltage
Differential Offset
CMRR vs. Drain Current
NPN EPITAXIAL
MJE800/801/803
SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE= 750 I C= -1.5 and -2.0A DC
MONOLITHIC CONSTRUCTION WITH
TO-126
BUILT-IN BASE-EMITTER RESISTORS
· Complement to MJE700/701/702/703
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector- Base Voltage
: MJE800/801
Symbol
Rating
Unit
VCBO
60
80
V
V
: MJE802/803
Collector-Emitter Voltage
: MJE800/801
VCEO
60
V
V
80
: MJE802/803
1. Emitter 2. Collector 3. Base
VEBO
IC
5
4
Emitter- Base Voltage
Collector Current
V
A
IB
0.1
Base Current
A
PC
40
W
°C
°C
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ 150
ELECTRICAL CHARACTERISTICS(TC=25°C)
Characteristic
Collector Emitter Breakdown Voltage
: MJE800/801
Symbol
BVCEO
Test Condition
Min
Max
Unit
IC = 50mA, IB = 0
60
80
V
V
: MJE802/803
ICEO
Collector Cutoff Current
: MJE800/801
VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCB = Rated BVCEO, IE = 0
VCB = Rated BVCEO, IE = 0
TC = 100°C
100
100
100
500
mA
mA
mA
mA
: MJE802/803
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
2
VBE = 5V, IC = 0
mA
DC Current Gain
: MJE800/802
750
750
100
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
: MJE801/803
: ALL DEVICES
Collector-Emitter Saturation Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
Base-Emitter On Voltage
: MJE800/802
VCE(sat)
VBE(on)
2.5
2.8
3
IC = 1.5A, IB = 30mA
IC = 2A, IB = 40mA
IC = 4A, IB = 40mA
V
V
V
1.2
2.5
3
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
V
V
V
: MJE801/803
: ALL DEVICES
Rev. B.1
ã
1999 Fairchild Semiconductor Corporation
NPN EPITAXIAL
SILICON DARLINGTON TRANSISTOR
MJE800/801/803
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
相关型号：
NPDS5912D84Z
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SO-8
FAIRCHILD
NPDS5912L86Z
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SO-8
FAIRCHILD
NPDS5912L99Z
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SO-8
FAIRCHILD
NPDS5912S62Z
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SO-8
FAIRCHILD
NPDS8301L86Z
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SO-8
FAIRCHILD
NPDS8301L99Z
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SO-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明