NSFY240 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-257 ; 晶体管| MOSFET | N沟道| 200V V（ BR ） DSS | 18A I（ D） | TO- 257\n
| 型号： | NSFY240 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-257
|
| 文件： | 总1页 (文件大小：60K) |
| 下载： | 下载PDF数据表文档文件 |
NSFY300
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.9A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
ETC
NSFY300
Power Field-Effect Transistor, 6.9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
NSFY300Z
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
NSFY30509
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
ETC
NSFY30511
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6.5A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
5
ETC
NSFY30511
Power Field-Effect Transistor, 6.5A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
NSFY30511Z
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
NSFY30613
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.5A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
12
ETC
NSFY30613
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
NSFY30616
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
ETC
NSFY30724
TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 4.3A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
6
ETC
NSFY30728
TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 4A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
13
ETC
NSFY30728
Power Field-Effect Transistor, 4A I(D), 700V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
NSFY30824
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.3A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
6
ETC
NSFY30824
Power Field-Effect Transistor, 4.3A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
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