NTP75N06L/D [ETC]
Power MOSFET 75 Amps， 60 Volts， Logic Level ; 功率MOSFET 75安培， 60伏特，逻辑电平\n
| 型号： | NTP75N06L/D |
| 厂家： | 
ETC |
| 描述： | Power MOSFET 75 Amps， 60 Volts， Logic Level
|
| 文件： | 总8页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic Level
2
N–Channel TO–220 and D PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
75 AMPERES
60 VOLTS
R
= 11 mΩ
DS(on)
N–Channel
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (R
V
V
60
60
Vdc
Vdc
Vdc
DSS
= 10 MΩ)
G
GS
DGR
Gate–to–Source Voltage
– Continuous
4
V
V
"20
"15
GS
GS
S
– Non–Repetitive (t v10 ms)
p
4
Drain Current
1
2
– Continuous @ T = 25°C
I
I
75
50
225
Adc
Apk
A
D
D
– Continuous @ T = 100°C
3
A
– Single Pulse (t v10 µs)
I
p
DM
P
2
D PAK
TO–220AB
CASE 221A
STYLE 5
Total Power Dissipation @ T = 25°C
214
1.4
2.4
W
W/°C
W
A
D
CASE 418B
STYLE 2
Derate above 25°C
1
Total Power Dissipation @ T = 25°C (Note 1.)
A
2
3
Operating and Storage Temperature Range
T , T
stg
–55 to
+175
°C
J
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Single Pulse Drain–to–Source Avalanche
E
AS
844
mJ
4
Energy – Starting T = 25°C
J
4
Drain
(V
I
= 50 Vdc, V
= 75 A, V
DS
= 5.0 Vdc, L = 0.3 mH
DD
L(pk)
GS
= 60 Vdc)
Drain
Thermal Resistance
– Junction–to–Case
°C/W
°C
R
R
0.7
62.5
θJC
θJA
NTB75N06L
LLYWW
– Junction–to–Ambient (Note 1.)
NTP75N06L
LLYWW
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
2
1
3
1
Gate
3
1. When surface mounted to an FR4 board using minimum recommended pad
Drain
Gate
Source
Source
2
size, (Cu Area 0.412 in ).
2
NTx75N06L = Device Code
Drain
LL
= Location Code
= Year
Y
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP75N06L
NTB75N06L
NTB75N06LT4
TO–220AB
50 Units/Rail
50 Units/Rail
2
D PAK
2
D PAK
800/Tape & Reel
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
April, 2001 – Rev. 0
NTP75N06L/D
NTP75N06L, NTB75N06L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 2.)
(V = 0 Vdc, I = 250 µAdc)
V
Vdc
(BR)DSS
60
–
72
74
–
–
GS
D
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V
DS
(V
DS
= 60 Vdc, V
= 60 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 150°C)
–
–
–
–
10
100
GS
GS
J
Gate–Body Leakage Current (V
= ±15 Vdc, V
DS
= 0 Vdc)
I
–
–
±100
nAdc
Vdc
GS
GSS
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (Note 2.)
V
GS(th)
(V
= V , I = 250 µAdc)
1.0
–
1.58
6.0
2.0
–
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
Static Drain–to–Source On–Resistance (Note 2.)
R
V
mOhm
DS(on)
(V = 5.0 Vdc, I = 37.5 Adc)
–
9.0
11
GS
D
Static Drain–to–Source On–Voltage (Note 2.)
Vdc
DS(on)
(V
GS
(V
GS
= 5.0 Vdc, I = 75 Adc)
–
–
0.75
0.61
0.99
–
D
= 5.0 Vdc, I = 37.5 Adc, T = 150°C)
D
J
Forward Transconductance (Note 2.) (V
= 15 Vdc, I = 37.5 Adc)
g
FS
–
55
–
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
3122
1029
276
4370
1440
390
iss
(V
DS
= 25 Vdc, V
= 0 Vdc,
GS
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
C
oss
C
rss
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
t
–
–
–
–
–
–
–
22
265
113
170
66
32
370
160
240
92
ns
d(on)
Rise Time
t
r
(V
DD
GS
= 30 Vdc, I = 75 Adc,
D
V
= 5.0 Vdc, R = 9.1 Ω) (Note 2.)
G
Turn–Off Delay Time
Fall Time
t
d(off)
t
f
Gate Charge
Q
T
Q
1
Q
2
nC
(V
DS
= 48 Vdc, I = 75 Adc,
D
= 5.0 Vdc) (Note 2.)
9.0
47
–
V
GS
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I = 75 Adc, V
= 0 Vdc) (Note 2.)
V
SD
–
–
1.0
0.9
1.15
–
Vdc
ns
S
GS
(I = 75 Adc, V
S
= 0 Vdc, T = 150°C)
GS
J
Reverse Recovery Time
t
rr
–
–
–
–
70
43
–
–
–
–
(I = 75 Adc, V
= 0 Vdc,
GS
S
t
a
dI /dt = 100 A/µs) (Note 2.)
S
t
b
27
Reverse Recovery Stored Charge
Q
0.16
µC
RR
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTP75N06L, NTB75N06L
160
140
120
160
V
= 4.5 V
V
DS
w 10 V
GS
V
GS
= 10 V
140
120
V
= 5 V
GS
V
= 6 V
GS
V
= 4 V
GS
100
80
100
80
V
V
= 7 V
= 8 V
GS
V
GS
= 3.5 V
GS
60
60
40
40
T = 25°C
J
V
= 3 V
GS
20
0
20
0
T = 100°C
J
T = –55°C
J
0
1
2
3
4
1.4
1.8 2.2 2.6
3
3.4
3.8 4.2 4.6
5
V , DRAIN–TO–SOURCE VOLTAGE (V)
DS
V , GATE–TO–SOURCE VOLTAGE (V)
GS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.02
0.02
V
GS
= 5 V
V
GS
= 10 V
0.016
0.016
T = 100°C
J
T = 100°C
J
0.012
0.008
0.004
0.012
0.008
0.004
T = 25°C
J
T = 25°C
J
T = –55°C
J
T = –55°C
J
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
2
1.8
1.6
1.4
1.2
1
100000
10000
I
V
= 37.5 A
V
GS
= 0 V
D
= 5 V
GS
T = 150°C
J
T = 125°C
J
1000
100
10
T = 100°C
J
0.8
0.6
–50 –25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V , DRAIN–TO–SOURCE VOLTAGE (V)
DS
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
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3
NTP75N06L, NTB75N06L
12000
10000
8000
6000
4000
2000
0
6
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
Q
Q
T
5
4
3
2
1
V
GS
Q
1
C
iss
2
C
rss
C
iss
C
oss
I
= 75 A
D
J
C
rss
T = 25°C
0
10
5
V
GS
0 V
DS
5
10
15
20
25
0
10
20
30
40
50
60
70
GATE–TO–SOURCE OR DRAIN–TO–SOURCE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
1000
100
10
80
70
60
50
40
30
20
V
= 30 V
DS
V
= 0 V
GS
I
V
= 75 A
T = 25°C
J
D
= 5 V
GS
t
r
t
f
t
t
d(off)
10
0
d(on)
1
10
100
0.6
0.64 0.68 0.72 0.76 0.8 0.84 0.86 0.92 0.96
, SOURCE–TO–DRAIN VOLTAGE (V)
R
, GATE RESISTANCE (Ω)
V
SD
G
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
1000
V
= 15 V
I
D
= 75 A
GS
SINGLE PULSE
= 25°C
10 µs
T
C
800
600
400
200
0
100 µs
1 ms
10 ms
dc
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
10
100
25
50
75
100
125
150
175
V , DRAIN–TO–SOURCE VOLTAGE (V)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTP75N06L, NTB75N06L
1.0
D = 0.5
0.2
0.1
P
(pk)
0.1
0.05
R
(t) = r(t) R
θJC
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.02
t
READ TIME AT t
1
1
0.01
t
2
T
J(pk)
– T = P
R
(t)
C
(pk) θJC
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.0001
0.01
0.00001
0.001
0.01
t, TIME (µs)
0.1
1.0
10
Figure 13. Thermal Response
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5
NTP75N06L, NTB75N06L
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
0.080
2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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6
NTP75N06L, NTB75N06L
PACKAGE DIMENSIONS
2
D PAK
CASE 418B–03
ISSUE D
C
E
V
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
4
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
A
MIN
8.64
9.65
4.06
0.51
1.14
MAX
9.65
10.29
4.83
0.89
1.40
A
B
C
D
E
G
H
J
0.340
0.380
0.160
0.020
0.045
0.380
0.405
0.190
0.035
0.055
S
1
2
3
–T–
SEATING
PLANE
K
0.100 BSC
2.54 BSC
0.080
0.018
0.090
0.575
0.045
0.110
0.025
0.110
0.625
0.055
2.03
0.46
2.79
0.64
J
G
K
S
V
2.29
14.60
1.14
2.79
15.88
1.40
H
D 3 PL
M
M
T B
0.13 (0.005)
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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7
NTP75N06L, NTB75N06L
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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NTP75N06L/D
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