OM400L60CMC [ETC]
600V 400A Chopper Hi-Rel CERMOD IGBT Power Module ; 600V 400A砍刀高可靠性CERMOD IGBT功率模块\n
| 型号： | OM400L60CMC |
| 厂家： | 
ETC |
| 描述： | 600V 400A Chopper Hi-Rel CERMOD IGBT Power Module
|
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246
ELECTRICAL CHARACTERISTICS: OM400L60CMC (Tc= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
600
Typ. Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, VCE=0V
Zero Gate Voltage Drain Current, VGE=0, VCE =600V
Gate Emitter Leakage Current, VGE=+/-15V, VCE=0V
VCES
ICES
IGES
V
mA
mA
25
2
ON CHARACTERISTICS
Gate Threshold Voltage, VCE=VGE, IC=6mA
Collector Emitter Saturation Voltage, VGE=15V, IC=400A
VGE(TH)
VCE(SAT)
4.5
6.5
2.7
V
V
2.4
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
Input Capacitance
Output Capacitance
VCE=5V, IC=400A
VGE=0
VCE=25V
gfs
42
20000
1080
1120
S
Cies
Coes
Cres
pF
pF
pF
Rev. Transfer Capacitance
f=1.0MHz
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-on Losses
t(on)
tr
Eon
800 1600
nS
nS
mJ
VCC= 300V, IC=400A
400
20
800
VGE=+15/-10V, RG=6.8W
L=100mH,Tj=125°C
Turn-off Delay Time
Fall Time
Turn-off Losses
td(off)
tf
Eoff
800 1200
nS
nS
mJ
350
25
800
DIODE CHARACTERISTICS
Maximum Forward Voltage
VF
Qrr
Irr
1.5
2.0
V
mC
A
IF=400A, Tj=25°C
Tj=125°C
VR=300V, Tj=25°C
IF=400A, Tj=125°C
dI/dt=-1500A/mS Tj=25°C
Tj=125°C
10
24
60
Reverse Recovery
Characteristics
90
trr
160
220
nS
Tj=25°C
Tj=125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)
Thermal Resistance, Junction to Case (Per Diode)
Maximum Junction Temperature
RthJC
RthJC
TjMAX
VisRMS
-
0.085
0.15
150
2500
20
°C/W
°C/W
°C
Isolation Voltage
V
Screw Torque
Mounting
Terminals
Terminals
15
10
6
in-lb
in-lb
in-lb
Screw Torque (M6)
Screw Torque (M3)
Module Weight
12
8
-
-
400 Grams
12/08/98
Rev. D
1
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246
OM400L60CMC
IGBT Collector Current vs. Collector-emitter Voltage
Tj=-55°C
IGBT Collector current vs. Collector-emitter voltage
Tj=25°C
500
400
300
500
400
300
Vge = 13V
Vge = 13V
Vge = 15V
Vge = 15V
Vge = 11V
Vge = 11V
IC (A)
IC (A)
Vge = 9V
200
100
0
Vge = 9V
200
100
0
Vge = 7V
Vge = 7V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE (V)
VCE (V)
IGBT Collector Current vs. Collector-emitter voltage
Tj=125°C
Diode Forward Current vs. Forward voltage
Vge =0V
500
400
300
500
400
300
Vge = 13V
Tj=-55°C
Vge = 15V
Vge = 11V
Vge = 9V
Ic(A)
If (A)
200
100
0
200
100
0
Tj=125°C
Tj=25°C
Vge =7V
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
Vce(V)
Vf (V)
12/08/98
Rev. D
2
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246
OM400L60CMC
MECHANICAL OUTLINE
G2
E2
C2E1
C1
E2
EQUIVALENT CIRCUIT
C1
C2E1
G2
E2
E2
12/08/98
Rev. D
3
相关型号：
OM4010NMV
Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, Silicon, HERMETIC SEALED, METAL PACKAGE-2
INFINEON
©2020 ICPDF网 联系我们和版权申明