OM5N100NK [ETC]
POWER MOSFETS IN A TO-3 PACKAGE; 在TO -3封装的功率MOSFET
| 型号： | OM5N100NK |
| 厂家： | 
ETC |
| 描述： | POWER MOSFETS IN A TO-3 PACKAGE |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM5N100NK
OM6N100NK
POWER MOSFETS IN A TO-3 PACKAGE
1000V, Up To 6 Amp, N-Channel
MOSFETs In A TO-3 Package
FEATURES
• TO-3 Hermetic Package, .060 Dia. Leads
• Fast Switching
• Low RDS(on)
• 1000 Volt, Size 5 Die
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM5N100NK
OM6N100NK
VDS (V)
1000
RDS(on) ( )
3.0
ID (A)
5.0
1000
2.0
6.0
3.1
MECHANICAL OUTLINE
1.197
1.177
1.53
REF.
0.675
0.655
0.875
MAX.
0.188 R.
MAX.
2
1
0.450
0.250
0.440
0.420
0.312
0.225
0.135
MAX.
MIN.
0.205
SEATING
PLANE
0.161
0.151
0.525 R.
MAX.
0.063
0.058
2 PLCS.
Pin Connection
Pin 1: Gate
Pin 2: Source
Case: Drain
4 11 R1
Supersedes 3 12 R0
3.1 - 41
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Min. Typ. Max. Units Test Conditions
Symbol
VDS
Parameter
OM5N100NK OM6N100NK
Units
V
BVDSS Drain-Source Breakdown
Voltage
1000
2.0
V
VGS = 0,
D = 250 mA
VDS = VGS ID = 250 mA
Drain-Source Voltage
Drain-Source Voltage (RGS = 20k )
Continuous Drain Current
Continuous Drain Current
1000
1000
5.0
1000
1000
6.0
I
VGS(th) Gate-Threshold Voltage
4.0
V
,
VDGR
V
025Craw
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
100 nA VGS = 20 V, VDS = 0
- 100 nA VGS = - 20 V, VDS = 0
0.25 mA VDS = Max. Rat., VGS = 0
ID @ TC = 25°C
A
ID @ TC = 100°C
3.1
3.7
A
o
S
Drain Current
1.0 mA
V
DS = 0.8 x Max. Rat.,
GS = 0, TC = 125° C
VDS > ID(on) x RDS(on)Max.,
GS = 10 V
1
IDM
Pulsed Drain Current
24
24
A
V
e
VGS
Gate-Source Voltage
±20
130
51
±20
130
51
V
,
ID(on)
On-State Drain Current
5.0
A
PD @ TC = 25°C
PD @ TC =100°C
Junction-To-Case
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
V
RDS(on) Static Drain-Source On-State
Resistance1 - OM5N100NK
3.0
VGS = 10 V, ID = 2.5 A
W
nitsr,eAM10
1.00
.033
1.00
.033
W/°C
W/°C
RDS(on) Static Drain-Source On-State
Resistance1 - OM5N100NK
6.0
VGS = 10 V, ID = 2.5 A
TC = 100° C
Junction-To-Ambient Linear Derating Factor
RDS(on) Static Drain-Source On-State
Resistance1 - OM6N100NK
2.0
VGS = 10 V, ID = 3.0 A
TJ
Operating and
35USA(0
Tstg
Storage Temperature Range
(1/16" from case for 10secs.)
-55 to 150
300
-55 to 150
300
°C
°C
RDS(on) Static Drain-Source On-State
Resistance1 - OM6N100NK
4.0
VGS = 10 V, ID = 3.0 A
TC = 100° C
Lead Temperature
DYNAMIC
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
)8354
gfs
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
4.0
S
VDS = 25V, ID = 3.5 A
5-7
Ciss
Coss
Crss
Td(on)
tr
2800
350
130
65
pF VGS = 0
THERMAL RESISTANCE (Maximum) at TA = 25°C
67FXA(5)0835-426
pF VDS = 25 V
pF f = 1 MHz
RthJC
RthJA
Junction-To-Case Max.
Junction-to-Ambient
1.0
30
°C/W
°C/W
ns VDD = 400 V, ID = 6 A
ns Rg = 7 W , VGS = 10 V
Free Air Operation
55
td (off)
tf
Turn-Off Delay Time
Fall Time
62
ns
ns
VDD = 800 V, ID = 6 A,
G = 7 , VBS = 10 V
25
R
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
IS
Continuous Source Current
(Body Diode)
Source Current2
6
A
A
V
Modified MOSPOWER
symbol showing
G
ISM
24
2.5
the integral P-N
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
S
VSD
trr
TC = 25 C, IS = 6 A, VGS = 0
Reverse Recovery Time
1100
ns IF = IS, VDD = 100V,
dlF/ds = 100 A/ms, T =150°C
J
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
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