OM6004SR [ETC]
500V Single N-Channel Hi-Rel MOSFET in a D2 package ; 500V单N沟道高可靠性MOSFET的封装D2\n
| 型号： | OM6004SR |
| 厂家： | 
ETC |
| 描述： | 500V Single N-Channel Hi-Rel MOSFET in a D2 package
|
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6001ST OM6003ST OM6101ST OM6103ST
OM6002ST OM6004ST OM6102ST OM6104ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
• Isolated Hermetic Metal Package
• Bi-Lateral Zener Gate Protection (Optional)
• Fast Switching, Low Drive Current
• Ease Of Paralleling For Added Power
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6101ST series.
MAXIMUM RATINGS
PART NUMBER
VDS
RDS(on)
.20
ID
OM6001ST/OM6101ST
OM6002ST/OM6102ST
OM6003ST/OM6103ST
OM6004ST/OM6104ST
100 V
200 V
400 V
500 V
14 A
9 A
3.1
.44
1.05
1.60
5.5 A
4.5 A
Note: OM6101ST thru OM6104ST is supplied with zener gate protection.
OM6001ST thru OM6004ST is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6001ST - 6004ST
WITH ZENER CLAMPS
OM6101ST - 6104ST
1 - DRAIN
1 - DRAIN
3 - GATE
3 - GATE
ZENERS
2 - SOURCE
2 - SOURCE
4 11 R4
Supersedes 1 07 R3
3.1 - 71
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6101ST / OM6001ST (100V)
STATIC P/N OM6102ST / OM6002 ST (200V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
100
2.0
V
V
200
2.0
V
V
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6101)
Gate-Body Leakage (OM6001)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6102)
Gate-Body Leakage (OM6002)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
V
DS = 0.8 Max. Rat., VGS = 0,
VDS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
0.2 1.0 mA
A
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
14
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
9.0
A
V
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 5.0 A
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
1.2 1.60
0.20
V
VGS = 10 V, ID = 8 A
VGS = 10 V, ID = 8 A
1.25 2.2
0.44
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 5.0 A
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 8 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 5.0 A,
TC = 125 C
0.40
0.88
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
4.0
S(W ) VDS 2 VDS(on), ID = 8 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
3.0 5.8
780
150
55
S(W ) VDS 2 VDS(on), ID = 5.0 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
750
250
100
15
Ciss
Coss
Crss
td(on)
tr
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 30 V, ID @ 8 A
ns Rg = 7.5 W , VDS = 10 V
ns
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 75V, ID @ 5.0 A
ns Rg = 7.5 W , VGS =10 V
ns
9
35
18
td(off)
tf
Turn-Off Delay Time
Fall Time
38
td(off)
tf
Turn-Off Delay Time
Fall Time
45
23
ns
27
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
Modified MOSPOWER
D
IS
Continuous Source Current
Modified MOSPOWER
D
- 14
A
- 9
A
(Body Diode)
symbol showing
(Body Diode)
symbol showing
G
G
ISM
Source Current1
the integral P-N
Junction rectifier.
ISM
Source Current1
the integral P-N
Junction rectifier.
- 56
A
- 36
A
S
S
(Body Diode)
(Body Diode)
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
TC = 25 C, IS = -14 A, VGS = 0
TC = 25 C, IS = -12 A, VGS = 0
TJ = 150 C, IF = IS,
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
TC = 25 C, IS = -9 A, VGS = 0
TC = 25 C, IS = -8 A, VGS = 0
TJ = 150 C, IF = IS,
- 2.5
- 2.5
V
V
- 2
- 2
V
V
100
ns
250
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6103ST / OM6003ST (400V) STATIC P/N OM6104ST / OM6004ST (500V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
400
2.0
V
V
500
2.0
V
V
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6103)
Gate-Body Leakage (OM6003)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6104)
Gate-Body Leakage (OM6004)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
V
DS = 0.8 Max. Rat., VGS = 0,
VDS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
0.2 1.0 mA
A
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
5.5
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
4.5
A
V
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 2.5 A
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
2.4 3.15
1.05
V
VGS = 10 V, ID = 3.0 A
VGS = 10 V, ID = 3.0 A
3.25 4.00
1.6
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 2.5 A
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 3.0 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 2.5 A,
TC = 125 C
2.0
2.9 3.3
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
3.0 3.6
S(W ) VDS 2 VDS(on), ID = 3.0 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
2.5 2.8
700
90
S(W ) VDS 2 VDS(on), ID = 2.5 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
700
70
20
18
20
40
25
Ciss
Coss
Crss
td(on)
tr
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 175 V, ID @ 3.0 A
ns Rg = 10 W ,VGS = 10 V
ns
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 225 V, ID @ 2.5 A
ns Rg = 7.5 W , VGS = 10 V
ns
30
18
20
td(off)
tf
Turn-Off Delay Time
Fall Time
td(off)
tf
Turn-Off Delay Time
Fall Time
42
ns
25
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
D
D
- 5.5
A
- 4.5
A
(Body Diode)
Source Current1
symbol showing
G
(Body Diode)
Source Current1
symbol showing
G
ISM
the integral P-N
ISM
the integral P-N
- 22
A
- 18
A
S
S
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
TC = 25 C, IS = -5.5 A, VGS = 0
TC = 25 C, IS = -4.5 A, VGS = 0
TJ = 150 C, IF = IS,
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
TC = 25 C, IS = -4.5 A, VGS = 0
TC = 25 C, IS = -4 A, VGS = 0
TJ = 150 C, IF = IS,
- 1.6
- 2.5
V
V
- 1.4
- 2
V
V
470
ns
430
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
OM6001ST - OM6104ST
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
OM6001ST OM6002ST OM6003ST OM6004ST
OM6101ST OM6102ST OM6103ST OM6104ST
Parameter
Units
VDS
Drain-Source Voltage
100
100
±14
±9
200
200
±9
400
400
±5.5
±3.5
±22
50
500
500
±4.5
±3
V
V
VDGR
Drain-Gate Voltage (RGS = 1 M )
Continuous Drain Current2
Continuous Drain Current2
Pulsed Drain Current1
ID @ TC = 25°C
ID @ TC = 100°C
IDM
A
±6
A
±56
50
±36
50
±18
50
A
PD @ TC = 25°C
PD @ TC = 100°C
Junction To Case
Junction To Ambient
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
20
20
20
20
W
0.4
.015
0.4
.015
0.4
0.4
W/°C
W/°C
Linear Derating Factor
.015
.015
Operating and
Tstg
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Lead Temperature
300
300
300
300
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitations = 16 amps
THERMAL RESISTANCE (MAXIMUM) at TA = 25°C
RthJC
RthJA
Junction-to-Case
2.5
65
°C/W
Junction-to-Ambient
°C/W Free Air Operation
MECHANICAL OUTLINE
WITH PIN CONNECTION
POWER DERATING
.200
.190
.420
.410
90
75
.045
.035
RθJC = 2.5° C/W
60
45
.665
.645
.150
.140
3.1
.537
.527
.430
.410
30
15
0
1
2
3
.038 MAX.
.005
0
25 50 75 100 125 150 175
C - CASE TEMPERATURE (C°)
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.750
.500
T
.120 TYP.
.100 TYP.
.035
.025
PACKAGE OPTIONS
6 PIN SIP
MOD PAK
Z-TAB
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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