OM6012SA [ETC]
500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package ; 500V单N沟道高可靠性MOSFET采用TO - 254AA封装
| 型号： | OM6012SA |
| 厂家： | 
ETC |
| 描述： | 500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6009SA OM6011SA OM6109SA OM6111SA
OM6010SA OM6012SA OM6110SA OM6112SA
POWER MOSFETS IN HERMETIC ISOLATED
TO-254AA PACKAGE
100V Thru 500V, Up To 22 Amp, N-Channel
MOSFET In Hermetic Metal Package, With
Optional Zener Gate Clamp Protection
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels
• Bi-Lateral Zener Gate Protection (Optional)
• Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits. The MOSFET gates are protected using
bi-lateral zeners in the OM6109SA series.
MAXIMUM RATINGS
PART NUMBER
VDS
RDS(ON)
.095
.18
ID(MAX)
22A
18A
10A
8A
OM6009SA, OM6109SA
OM6010SA, OM6110SA
OM6011SA, OM6111SA
OM6012SA, OM6112SA
100V
200V
400V
500V
3.1
.55
.85
Note: OM61XX Series include gate protection circuitry.
SCHEMATIC
POWER RATING
4 11 R3
Supersedes 1 07 R2
3.1 - 79
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6009SA / OM6109SA
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6010SA / OM6110SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
100
V
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
200
V
VGS = 0,
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
V
VDS = VGS ID = 250 mA
,
IGSSF
IGSSR
IGSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6109)
Zero Gate Voltage Drain
Current
100 nA VGS = 20 V
-100 nA VGS = - 20 V
IGSSF
IGSSR
IGSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6110)
Zero Gate Voltage Drain
Current
100 nA VGS = 20 V
- 100 nA VGS = - 20 V
± 500 nA VGS = ± 12.8 V
± 500 nA VGS = ± 12.8 V
IDSS
0.1 0.25 mA VDS = Max. Rat., VGS = 0
IDSS
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
0.2 1.0 mA
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
ID(on)
On-State Drain Current1
22
A
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 15 A
ID(on)
On-State Drain Current1
18
A
V
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 10 A
VDS(on) Static Drain-Source On-State
Voltage1
1.275 1.425
.085 .095
.130 .155
V
VDS(on) Static Drain-Source On-State
Voltage1
1.4 1.8
0.14 0.18
0.28 0.36
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 15 A
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 10 A
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 15 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 10 A,
TC = 125 C
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
10.0
S(W) VDS 2 VDS(on), ID = 15 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
6.0
S(W) VDS 2 VDS(on), ID = 10 A
pF VGS = 0
Ciss
Coss
Crss
Td(on)
tr
1275
550
160
16
Ciss
Coss
Crss
Td(on)
tr
1000
250
100
17
pF VDS = 25 V
pF VDS = 25 V
pF f = 1 MHz
pF f = 1 MHz
ns VDD = 30 V, ID = 5 A
ns Rg = 5 W, VGS = 10 V
ns VDD = 75 V, ID @18 A
ns Rg = 5 W, VGS = 10 V
19
52
(MOSFET) switching times are
(MOSFET) switching times are
ns
Td(off)
tf
Turn-Off Delay Time
Fall Time
42
ns
Td(off)
tf
Turn-Off Delay Time
Fall Time
36
essentially independent of
essentially independent of
operating temperature.
ns
operating temperature.
ns
24
30
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
- 27
- 108
- 2.5
A
A
V
Modified MOSPOWER
IS
Continuous Source Current
- 18
- 72
- 2
A
A
V
Modified MOSPOWER
(Body Diode)
Source Current1
symbol showing
(Body Diode)
Source Current1
symbol showing
G
G
ISM
the integral P-N
ISM
the integral P-N
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
S
S
VSD
trr
TC = 25 C, IS = -24 A, VGS = 0
VSD
trr
TC = 25 C, IS = -18 A, VGS = 0
Reverse Recovery Time
200
ns TJ = 150 C,IF = IS,
Reverse Recovery Time
350
ns TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6011SA / OM6111SA
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6012SA / OM6112SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
400
V
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
500
V
VGS = 0,
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
V
VDS = VGS ID = 250 mA
,
IGSSF
IGSSR
IGSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6111)
Zero Gate Voltage Drain
Current
100 nA VGS = 20 V
-100 nA VGS = - 20 V
IGSSF
IGSSR
IGSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6112)
Zero Gate Voltage Drain
Current
100 nA VGS = 20 V
- 100 nA VGS = - 20 V
± 500 nA VGS = ± 12.8 V
± 500 nA VGS = ± 12.8 V
IDSS
0.1 0.25 mA VDS = Max. Rat., VGS = 0
IDSS
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
0.2 1.0 mA
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
ID(on)
On-State Drain Current1
10
A
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 5 A
ID(on)
On-State Drain Current1
8.0
A
V
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 4 A
VDS(on) Static Drain-Source On-State
Voltage1
2.35 2.75
0.47 0.55
0.93 1.10
V
VDS(on) Static Drain-Source On-State
Voltage1
3.2 3.4
0.8 0.85
1.50 1.65
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 5 A
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 4 A
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 5 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 4 A,
TC = 125 C
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
4.0
S(W) VDS 2 VDS(on), ID = 5 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
4.0
S(W) VDS 2 VDS(on), ID = 4 A
pF VGS = 0
Ciss
Coss
Crss
Td(on)
tr
1150
165
70
Ciss
Coss
Crss
Td(on)
tr
1275
200
85
pF VDS = 25 V
pF VDS = 25 V
pF f = 1 MHz
pF f = 1 MHz
17
ns VDD = 175 V, ID @5 A
ns Rg = 5 W, VGS = 10 V
17
ns VDD = 200 V, ID =4 A
ns Rg = 5 W, VGS = 10 V
12
5
(MOSFET) switching times are
ns
(MOSFET) switching times are
ns
Td(off)
tf
Turn-Off Delay Time
Fall Time
45
Td(off)
tf
Turn-Off Delay Time
Fall Time
42
essentially independent of
essentially independent of
operating temperature.
ns
operating temperature.
ns
30
14
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
- 10
- 40
- 2
A
A
V
Modified MOSPOWER
IS
Continuous Source Current
- 8
- 32
- 2
A
A
V
Modified MOSPOWER
(Body Diode)
Source Current1
symbol showing
(Body Diode)
Source Current1
symbol showing
G
G
ISM
the integral P-N
ISM
the integral P-N
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
S
S
VSD
trr
TC = 25 C, IS = -10 A, VGS = 0
VSD
trr
TC = 25 C, IS = -18 A, VGS = 0
Reverse Recovery Time
530
ns TJ = 150 C,IF = IS,
Reverse Recovery Time
700
ns TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
OM6009SA - OM6112SA
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
OM6009
OM6109
OM6010
OM6110
OM6011
OM6111
OM6012
OM6112 Units
Parameter
VDS
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1 M )
100
100
± 22
± 17
± 88
± 20
125
50
200
200
± 18
± 11
± 72
± 20
125
50
400
400
± 10
± 6
500
500
± 8
V
V
VDGR
2
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current
A
2
Continuous Drain Current
± 5
A
1
Pulsed Drain Current
± 40
± 20
125
50
± 32
± 20
125
50
A
VGS
Gate-Source Volt. (Unclamped Gate)
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
V
PD @ TC = 25°C
PD @ TC = 100°C
Junction To Case
W
W
1.0
1.0
1.0
1.0
W/°C
W/°C
Junction To Ambient Linear Derating Factor
.020
.020
.020
.020
TJ
Operating and
Tstg
Storage Temperature Range
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
1
2
Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
Package Pin Limitation = 25 Amps
THERMAL RESISTANCE
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
1.0
50
°C/W
°C/W
Free Air Operation
MECHANICAL OUTLINE
.545
.535
.050
.040
.144 DIA.
.940
.740
.260
MAX
.540
.200
.100
2 PLCS.
3.1
.040
.800
.790
.685
.665
.550
.530
.250
.290
.125 DIA.
.540
2 PLS.
1
2
3
.125
2 PLCS.
1 2
3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.550
.510
.500
MIN.
.005
.045
.035
.150
.300
.040 DIA.
3 PLCS.
.150 TYP.
.150
.260
.249
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
NOTE: Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number.
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
相关型号：
OM6017SAPBF
Power Field-Effect Transistor, 25A I(D), 100V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6017SATPBF
Power Field-Effect Transistor, 25A I(D), 100V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6017SAV
Power Field-Effect Transistor, 25A I(D), 100V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
OM6018SAPBF
Power Field-Effect Transistor, 25A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明