OM6017SA [ETC]
POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE; 功率MOSFET在HERMETIC隔离,以- 254AA封装型号: | OM6017SA |
厂家: | ETC |
描述: | POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE |
文件: | 总4页 (文件大小:48K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
OM6017SA OM6019SA
OM6018SA OM6020SA
POWER MOSFET IN HERMETIC ISOLATED
TO-254AA PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Same as IRFM 150 - 450 Series
• Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS @ 25 C
PART NUMBER
OM6017SA
OM6018SA
OM6019SA
OM6020SA
VDS
RDS(on)
.065
.100
.33
ID
100 V
200 V
400 V
500 V
25 A
25 A
13 A
11 A
3.1
.42
SCHEMATIC
POWER RATING
4 11 R4
Supersedes 1 07 R3
3.1 - 85
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6017SA
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6018SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
100
2.0
V
V
200
2.0
V
V
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = +20 V
- 100 nA VGS = -20 V
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = + 20 V
-100 nA VGS = - 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
V
DS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
A
0.2
1.0 mA
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
35
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
30
A
VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
1.1 1.3
0.55 0.65
.09 0.11
V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A
1.36 1.60
.085 .100
0.14 0.17
V
VGS = 10 V, ID = 16 A
VGS = 10 V, ID = 16 A
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 20 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 16 A,
TC = 125 C
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
9.0
S(W) VDS 2 VDS(on), ID = 20 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
10.0
S(W) VDS 2 VDS(on), ID = 16 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
2700
1300
470
28
Ciss
Coss
Crss
td(on)
tr
2400
600
250
25
pF VDS = 25 V
pF VDS = 25 V
pF f = 1 MHz
pF f = 1 MHz
ns VDD = 30 V, ID @20 A
ns Rg = 5.0 W, VG = 10V
ns VDD = 75 V, ID @16 A
ns Rg = 5.0 W,VGS = 10V
45
60
(MOSFET switching times are
ns
(MOSFET switching times are
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
100
50
td(off)
tf
Turn-Off Delay Time
Fall Time
85
essentially independent of
essentially independent of
operating temperature.)
operating temperature.)
ns
38
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
symbol showing
- 40
A
- 30
A
(Body Diode)
Source Current1
symbol showing
(Body Diode)
Source Current1
G
G
ISM
the integral P-N
ISM
the integral P-N
- 160
- 2.5
A
V
- 120
- 2
A
V
S
S
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
VSD
trr
TC = 25 C, IS = -40 A, VGS = 0
TJ = 150 C, IF = IS,
VSD
trr
TC = 25 C, IS = -30 A, VGS = 0
TJ = 150 C, IF = IS,
Reverse Recovery Time
400
ns
Reverse Recovery Time
350
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6019SA
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6020SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
400
2.0
V
V
500
2.0
V
V
ID = 250 mA
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = +20 V
- 100 nA VGS = - 20 V
IGSSF
IGSSR
IDSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
100 nA VGS = +20 V
- 100 nA VGS = - 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
V
DS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
A
0.2
1.0 mA
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
15
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
13
A
VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
2.0 2.64
0.25 .33
0.50 0.66
V
VGS = 10 V, ID = 8.0 A
VGS = 10 V, ID = 8.0 A
2.1 2.94
0.3 0.42
0.66 0.88
V
VGS = 10 V, ID = 7.0 A
VGS = 10 V, ID = 7.0 A
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 8.0 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 7.0 A,
TC = 125 C
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
6.0
S(W) VDS 2 VDS(on), ID = 8.0 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
6.0
S(W) VDS 2 VDS(on), ID = 7.0 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
2900
450
150
30
Ciss
Coss
Crss
td(on)
tr
2600
280
40
pF VDS = 25 V
pF VDS = 25 V
pF f = 1 MHz
pF f = 1 MHz
ns VDD = 200 V, ID @8.0 A
ns Rg =5.0 W, VGS =10V
30
ns VDD = 210 V, ID @7.0 A
ns Rg = 5.0 W, VGS = 10 V
40
46
(MOSFET switching times are
ns
(MOSFET switching times are
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
80
td(off)
tf
Turn-Off Delay Time
Fall Time
75
essentially independent of
essentially independent of
operating temperature.)
operating temperature.)
30
ns
31
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
D
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
symbol showing
- 15
A
- 13
A
(Body Diode)
Source Current1
symbol showing
(Body Diode)
Source Current1
G
G
ISM
the integral P-N
ISM
the integral P-N
- 60
A
V
- 52
A
V
S
S
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
(Body Diode)
Diode Forward Voltage1
Junction rectifier.
VSD
trr
- 1.6
TC = 25 C, IS = -15 A, VGS = 0
TJ = 100 C, IF = IS,
VSD
trr
- 1.4
TC = 25 C, IS = -13 A, VGS = 0
TJ = 150 C, IF = IS,
Reverse Recovery Time
600
ns
Reverse Recovery Time
700
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
OM6017SA - OM6020SA
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OM6017SA OM6018SA OM6019SA OM6020SA Units
VDS
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1 M )
Continuous Drain Current2
Continuous Drain Current2
Pulsed Drain Current1
Gate-Source Voltage
100
100
±25
±16
±100
± 20
125
50
200
200
±25
±16
±80
± 20
125
50
400
400
±13
±8
500
500
±11
±7
V
V
VDGR
ID @ TC = 25°C
ID @ TC = 100°C
IDM
A
A
±54
±20
125
50
±40
± 20
125
50
A
VGS
V
PD @ TC = 25°C
PD @ TC = 100°C
Junction To Case
Junction To Ambient
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Linear Derating Factor
Operating and
W
W
1.0
1.0
1.0
1.0
W/°C
W/°C
.020
.020
.020
.020
Tstg
Storage Temperature Range
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitation = 15 Amps
THERMAL RESISTANCE
RthJC
RthJA
Junction-to-Case
1.0
50
°C/W
Junction-to-Ambient
°C/W Free Air Operation
MECHANICAL OUTLINE
.545
.535
.050
.040
.144 DIA.
.940
.740
.260
MAX
.540
.200
.100
2 PLCS.
.040
.800
.790
.685
.665
3.1
.550
.530
.250
.290
.125 DIA.
.540
2 PLS.
1
2
3
.125
2 PLCS.
1 2
3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.550
.510
.500
MIN.
.005
.045
.035
.150
.300
.040 DIA.
3 PLCS.
.150 TYP.
.150
.260
.249
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
NOTES: Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number.
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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