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OM6019SAT [INFINEON]

Power Field-Effect Transistor, 13A I(D), 400V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN;
OM6019SAT
型号： OM6019SAT
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 13A I(D), 400V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

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OM6017SA OM6019SA  
OM6018SA OM6020SA  
POWER MOSFET IN HERMETIC ISOLATED  
TO-254AA PACKAGE  
100V Thru 500V, Up To 25 Amp, N-Channel  
MOSFET In Hermetic Metal Package  
FEATURES  
• Isolated Hermetic Metal Package  
• Fast Switching  
• Low RDS(on)  
• Available Screened To MIL-S-19500, TX, TXV And S Levels  
• Same as IRFM 150 - 450 Series  
• Ceramic Feedthroughs Available  
DESCRIPTION  
This series of hermetically packaged products feature the latest advanced MOSFET  
and packaging technology. They are ideally suited for Military requirements where  
small size, high performance and high reliability are required, and in applications such  
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and  
high energy pulse circuits.  
MAXIMUM RATINGS @ 25 C  
PART NUMBER  
OM6017SA  
OM6018SA  
OM6019SA  
OM6020SA  
VDS  
RDS(on)  
.065  
.100  
.33  
ID  
100 V  
200 V  
400 V  
500 V  
25 A  
25 A  
13 A  
11 A  
3.1  
.42  
SCHEMATIC  
POWER RATING  
4 11 R4  
Supersedes 1 07 R3  
3.1 - 85  
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)  
STATIC P/N OM6017SA  
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)  
STATIC P/N OM6018SA  
Parameter  
Min. Typ. Max. Units Test Conditions  
Parameter  
Min. Typ. Max. Units Test Conditions  
BVDSS Drain-Source Breakdown  
Voltage  
VGS = 0,  
BVDSS Drain-Source Breakdown  
Voltage  
VGS = 0,  
100  
2.0  
V
V
200  
2.0  
V
V
ID = 250 mA  
ID = 250 mA  
VGS(th) Gate-Threshold Voltage  
4.0  
VDS = VGS, ID = 250 mA  
VGS(th) Gate-Threshold Voltage  
4.0  
VDS = VGS, ID = 250 mA  
IGSSF  
IGSSR  
IDSS  
Gate-Body Leakage Forward  
Gate-Body Leakage Reverse  
Zero Gate Voltage Drain  
Current  
100 nA VGS = +20 V  
- 100 nA VGS = -20 V  
IGSSF  
IGSSR  
IDSS  
Gate-Body Leakage Forward  
Gate-Body Leakage Reverse  
Zero Gate Voltage Drain  
Current  
100 nA VGS = + 20 V  
-100 nA VGS = - 20 V  
0.1 0.25 mA VDS = Max. Rat., VGS = 0  
0.1 0.25 mA VDS = Max. Rat., VGS = 0  
VDS = 0.8 Max. Rat., VGS = 0,  
V
DS = 0.8 Max. Rat., VGS = 0,  
0.2 1.0 mA  
A
0.2  
1.0 mA  
TC = 125° C  
TC = 125° C  
ID(on)  
On-State Drain Current1  
35  
VDS 2 VDS(on), VGS = 10 V  
ID(on)  
On-State Drain Current1  
30  
A
VDS 2 VDS(on), VGS = 10 V  
VDS(on) Static Drain-Source On-State  
Voltage1  
VDS(on) Static Drain-Source On-State  
Voltage1  
1.1 1.3  
0.55 0.65  
.09 0.11  
V
VGS = 10 V, ID = 20 A  
VGS = 10 V, ID = 20 A  
1.36 1.60  
.085 .100  
0.14 0.17  
V
VGS = 10 V, ID = 16 A  
VGS = 10 V, ID = 16 A  
RDS(on) Static Drain-Source On-State  
Resistance1  
RDS(on) Static Drain-Source On-State  
Resistance1  
RDS(on) Static Drain-Source On-State  
Resistance1  
VGS = 10 V, ID = 20 A,  
TC = 125 C  
RDS(on) Static Drain-Source On-State  
Resistance1  
VGS = 10 V, ID = 16 A,  
TC = 125 C  
DYNAMIC  
DYNAMIC  
) W (  
) W (  
gfs  
Forward Transductance1  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
9.0  
S(W) VDS 2 VDS(on), ID = 20 A  
pF VGS = 0  
gfs  
Forward Transductance1  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
10.0  
S(W) VDS 2 VDS(on), ID = 16 A  
pF VGS = 0  
Ciss  
Coss  
Crss  
td(on)  
tr  
2700  
1300  
470  
28  
Ciss  
Coss  
Crss  
td(on)  
tr  
2400  
600  
250  
25  
pF VDS = 25 V  
pF VDS = 25 V  
pF f = 1 MHz  
pF f = 1 MHz  
ns VDD = 30 V, ID @20 A  
ns Rg = 5.0 W, VG = 10V  
ns VDD = 75 V, ID @16 A  
ns Rg = 5.0 W,VGS = 10V  
45  
60  
(MOSFET switching times are  
ns  
(MOSFET switching times are  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
100  
50  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
85  
essentially independent of  
essentially independent of  
operating temperature.)  
operating temperature.)  
ns  
38  
ns  
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS  
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS  
D
D
IS  
Continuous Source Current  
Modified MOSPOWER  
IS  
Continuous Source Current  
Modified MOSPOWER  
symbol showing  
- 40  
A
- 30  
A
(Body Diode)  
Source Current1  
symbol showing  
(Body Diode)  
Source Current1  
G
G
ISM  
the integral P-N  
ISM  
the integral P-N  
- 160  
- 2.5  
A
V
- 120  
- 2  
A
V
S
S
(Body Diode)  
Diode Forward Voltage1  
Junction rectifier.  
(Body Diode)  
Diode Forward Voltage1  
Junction rectifier.  
VSD  
trr  
TC = 25 C, IS = -40 A, VGS = 0  
TJ = 150 C, IF = IS,  
VSD  
trr  
TC = 25 C, IS = -30 A, VGS = 0  
TJ = 150 C, IF = IS,  
Reverse Recovery Time  
400  
ns  
Reverse Recovery Time  
350  
ns  
dlF/ds = 100 A/ms  
dlF/ds = 100 A/ms  
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.  
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.  
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)  
STATIC P/N OM6019SA  
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)  
STATIC P/N OM6020SA  
Parameter  
Min. Typ. Max. Units Test Conditions  
Parameter  
Min. Typ. Max. Units Test Conditions  
BVDSS Drain-Source Breakdown  
Voltage  
VGS = 0,  
BVDSS Drain-Source Breakdown  
Voltage  
VGS = 0,  
400  
2.0  
V
V
500  
2.0  
V
V
ID = 250 mA  
ID = 250 mA  
VGS(th) Gate-Threshold Voltage  
4.0  
VDS = VGS, ID = 250 mA  
VGS(th) Gate-Threshold Voltage  
4.0  
VDS = VGS, ID = 250 mA  
IGSSF  
IGSSR  
IDSS  
Gate-Body Leakage Forward  
Gate-Body Leakage Reverse  
Zero Gate Voltage Drain  
Current  
100 nA VGS = +20 V  
- 100 nA VGS = - 20 V  
IGSSF  
IGSSR  
IDSS  
Gate-Body Leakage Forward  
Gate-Body Leakage Reverse  
Zero Gate Voltage Drain  
Current  
100 nA VGS = +20 V  
- 100 nA VGS = - 20 V  
0.1 0.25 mA VDS = Max. Rat., VGS = 0  
0.1 0.25 mA VDS = Max. Rat., VGS = 0  
VDS = 0.8 Max. Rat., VGS = 0,  
V
DS = 0.8 Max. Rat., VGS = 0,  
0.2 1.0 mA  
A
0.2  
1.0 mA  
TC = 125° C  
TC = 125° C  
ID(on)  
On-State Drain Current1  
15  
VDS 2 VDS(on), VGS = 10 V  
ID(on)  
On-State Drain Current1  
13  
A
VDS 2 VDS(on), VGS = 10 V  
VDS(on) Static Drain-Source On-State  
Voltage1  
VDS(on) Static Drain-Source On-State  
Voltage1  
2.0 2.64  
0.25 .33  
0.50 0.66  
V
VGS = 10 V, ID = 8.0 A  
VGS = 10 V, ID = 8.0 A  
2.1 2.94  
0.3 0.42  
0.66 0.88  
V
VGS = 10 V, ID = 7.0 A  
VGS = 10 V, ID = 7.0 A  
RDS(on) Static Drain-Source On-State  
Resistance1  
RDS(on) Static Drain-Source On-State  
Resistance1  
RDS(on) Static Drain-Source On-State  
Resistance1  
VGS = 10 V, ID = 8.0 A,  
TC = 125 C  
RDS(on) Static Drain-Source On-State  
Resistance1  
VGS = 10 V, ID = 7.0 A,  
TC = 125 C  
DYNAMIC  
DYNAMIC  
) W (  
) W (  
gfs  
Forward Transductance1  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
6.0  
S(W) VDS 2 VDS(on), ID = 8.0 A  
pF VGS = 0  
gfs  
Forward Transductance1  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
6.0  
S(W) VDS 2 VDS(on), ID = 7.0 A  
pF VGS = 0  
Ciss  
Coss  
Crss  
td(on)  
tr  
2900  
450  
150  
30  
Ciss  
Coss  
Crss  
td(on)  
tr  
2600  
280  
40  
pF VDS = 25 V  
pF VDS = 25 V  
pF f = 1 MHz  
pF f = 1 MHz  
ns VDD = 200 V, ID @8.0 A  
ns Rg =5.0 W, VGS =10V  
30  
ns VDD = 210 V, ID @7.0 A  
ns Rg = 5.0 W, VGS = 10 V  
40  
46  
(MOSFET switching times are  
ns  
(MOSFET switching times are  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
80  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
75  
essentially independent of  
essentially independent of  
operating temperature.)  
operating temperature.)  
30  
ns  
31  
ns  
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS  
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS  
D
D
IS  
Continuous Source Current  
Modified MOSPOWER  
IS  
Continuous Source Current  
Modified MOSPOWER  
symbol showing  
- 15  
A
- 13  
A
(Body Diode)  
Source Current1  
symbol showing  
(Body Diode)  
Source Current1  
G
G
ISM  
the integral P-N  
ISM  
the integral P-N  
- 60  
A
V
- 52  
A
V
S
S
(Body Diode)  
Diode Forward Voltage1  
Junction rectifier.  
(Body Diode)  
Diode Forward Voltage1  
Junction rectifier.  
VSD  
trr  
- 1.6  
TC = 25 C, IS = -15 A, VGS = 0  
TJ = 100 C, IF = IS,  
VSD  
trr  
- 1.4  
TC = 25 C, IS = -13 A, VGS = 0  
TJ = 150 C, IF = IS,  
Reverse Recovery Time  
600  
ns  
Reverse Recovery Time  
700  
ns  
dlF/ds = 100 A/ms  
dlF/ds = 100 A/ms  
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.  
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.  
OM6017SA - OM6020SA  
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)  
Parameter  
OM6017SA OM6018SA OM6019SA OM6020SA Units  
VDS  
Drain-Source Voltage  
Drain-Gate Voltage (RGS = 1 M )  
Continuous Drain Current2  
Continuous Drain Current2  
Pulsed Drain Current1  
Gate-Source Voltage  
100  
100  
±25  
±16  
±100  
± 20  
125  
50  
200  
200  
±25  
±16  
±80  
± 20  
125  
50  
400  
400  
±13  
±8  
500  
500  
±11  
±7  
V
V
VDGR  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
A
A
±54  
±20  
125  
50  
±40  
± 20  
125  
50  
A
VGS  
V
PD @ TC = 25°C  
PD @ TC = 100°C  
Junction To Case  
Junction To Ambient  
TJ  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
Linear Derating Factor  
Operating and  
W
W
1.0  
1.0  
1.0  
1.0  
W/°C  
W/°C  
.020  
.020  
.020  
.020  
Tstg  
Storage Temperature Range  
-55 to 150 -55 to 150 -55 to 150 -55 to 150  
°C  
°C  
Lead Temperature (1/16" from case for 10 secs.)  
300  
300  
300  
300  
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.  
2 Package Pin Limitation = 15 Amps  
THERMAL RESISTANCE  
RthJC  
RthJA  
Junction-to-Case  
1.0  
50  
°C/W  
Junction-to-Ambient  
°C/W Free Air Operation  
MECHANICAL OUTLINE  
.545  
.535  
.050  
.040  
.144 DIA.  
.940  
.740  
.260  
MAX  
.540  
.200  
.100  
2 PLCS.  
.040  
.800  
.790  
.685  
.665  
3.1  
.550  
.530  
.250  
.290  
.125 DIA.  
.540  
2 PLS.  
1
2
3
.125  
2 PLCS.  
1 2  
3
Pin 1: Drain  
Pin 2: Source  
Pin 3: Gate  
.550  
.510  
.500  
MIN.  
.005  
.045  
.035  
.150  
.300  
.040 DIA.  
3 PLCS.  
.150 TYP.  
.150  
.260  
.249  
.150 TYP.  
PACKAGE OPTIONS  
MOD PAK  
Z-TAB  
6 PIN SIP  
NOTES: Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number.  
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.  
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246  

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