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OM6406SD [ETC]

TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP ; 晶体管| MOSFET | ARRAY | N沟道| 200V V（ BR ） DSS |我8A （D ） | FP\n
OM6406SD
型号： OM6406SD
厂家： ETC    ETC
描述：

TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
晶体管| MOSFET | ARRAY | N沟道| 200V V（ BR ） DSS |我8A （D ） | FP\n

晶体 晶体管 开关 脉冲 局域网
文件： 总4页 (文件大小：353K)
中文：  中文翻译
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OM6406SDT

 Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16

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OM6406SDV

 Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16

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INFINEON

OM6407SD

 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP

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OM6407SDT

 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16

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OM6408SD

 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP

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OM6408SDT

 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16

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OM6408SDV

 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16

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OM6413SP3

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OM6414SP3

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OM6416SP3

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OM6418SP6

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OM6419SP6

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OM6420SP6

 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 2A I(D)

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OM6421SP6

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OM6422SP6

 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 100V V(BR)DSS | 3.5A I(D)

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OM6423SP6

 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 150V V(BR)DSS | 12A I(D)

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OM6424SP6

 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 100V V(BR)DSS | 12A I(D)

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OM6425SP6

 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 200V V(BR)DSS | 12A I(D)

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