OM6406SDT [INFINEON]
Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16;
| 型号： | OM6406SDT |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM6405SD
OM6406SD
OM6407SD
OM6408SD
FOUR UNCOMMITTED MOSFETS IN ONE
HERMETIC ISOLATED PACKAGE
Four Uncommitted 100 V To 500 V, 4 To 8 Amp,
N-Channel Power MOSFETs In One Package
FEATURES
• Isolated Hermetic Metal Package
• Small Mechanical Outline
• Fast Switching, Low Drive Current
• Ease Of Paralleling For Added Power
• Low RDS(on)
• Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS (Per Device)
PART NUMBER
VDS
RDS(on)
ID
OM6405SD
OM6406SD
OM6407SD
OM6408SD
100 V
200 V
400 V
500 V
.20
.44
14 A
9 A
3.1
1.05
1.60
5.5 A
4.5 A
SCHEMATIC
PIN CONNECTION
1
2
3
4
5
6
7
8
D
S
D
D
D
S
D
D
S
S
G
G
G
G
S
S
D
D
G
G
G
G
S
S
16 15 14 13 12 11 10 9
Pin 1, 8, 9 & 16 Are Uncommitted.
4 11 R3
Supersedes 8 10 R2
3.1 - 135
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6405SD (100V)
Parameter
STATIC P/N OM6406SD (200V)
Parameter
Min. Typ. Max. Units Test Conditions
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
VGS = 0,
BVDSS Drain-Source Breakdown
VGS = 0,
100
2.0
V
V
200
V
V
Voltage
ID = 250 mA
Voltage
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
VDS = VGS, ID = 250 mA
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6101)
Gate-Body Leakage (OM6001)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6102)
Gate-Body Leakage (OM6002)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
V
DS = 0.8 Max. Rat., VGS = 0,
VDS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
0.2 1.0 mA
A
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
14
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
9.0
A
V
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 5.0 A
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
1.2 1.60
0.20
V
VGS = 10 V, ID = 8 A
VGS = 10 V, ID = 8 A
1.25 2.2
0.44
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 5.0 A
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 8 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 5.0 A,
TC = 125 C
0.40
0.88
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
4.0
S(W ) VDS 2 VDS(on), ID = 8 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
3.0 5.8
780
150
55
S(W ) VDS 2 VDS(on), ID = 5.0 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
750
250
100
15
Ciss
Coss
Crss
td(on)
tr
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 30 V, ID @ 8 A
ns Rg = 7.5 W , VDS = 10 V
ns
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 75V, ID @ 5.0 A
ns Rg = 7.5 W , VGS =10 V
ns
9
35
18
td(off)
tf
Turn-Off Delay Time
Fall Time
38
td(off)
tf
Turn-Off Delay Time
Fall Time
45
23
ns
27
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
Modified MOSPOWER
D
IS
Continuous Source Current
Modified MOSPOWER
D
- 14
A
- 9
A
(Body Diode)
symbol showing
(Body Diode)
symbol showing
G
G
ISM
Source Current1
the integral P-N
Junction rectifier.
ISM
Source Current1
the integral P-N
Junction rectifier.
- 56
A
- 36
A
S
S
(Body Diode)
(Body Diode)
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
TC = 25 C, IS = -14 A, VGS = 0
TC = 25 C, IS = -12 A, VGS = 0
TJ = 150 C, IF = IS,
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
TC = 25 C, IS = -9 A, VGS = 0
TC = 25 C, IS = -8 A, VGS = 0
TJ = 150 C, IF = IS,
- 2.5
- 2.5
V
V
- 2
- 2
V
V
100
ns
250
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6407SD
Parameter
(400V)
STATIC P/N OM6408SD (500V)
Parameter
Min. Typ. Max. Units Test Conditions
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS = 0,
BVDSS Drain-Source Breakdown
VGS = 0,
400
2.0
V
V
500
V
V
ID = 250 mA
Voltage
ID = 250 mA
VGS(th) Gate-Threshold Voltage
4.0
VDS = VGS, ID = 250 mA
VGS(th) Gate-Threshold Voltage
2.0
4.0
VDS = VGS, ID = 250 mA
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6103)
Gate-Body Leakage (OM6003)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
IGSS
IGSS
IDSS
Gate-Body Leakage (OM6104)
Gate-Body Leakage (OM6004)
Zero Gate Voltage Drain
Current
± 500 nA VGS = ± 12.8 V
± 100 nA VGS = ± 20 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.1 0.25 mA VDS = Max. Rat., VGS = 0
V
DS = 0.8 Max. Rat., VGS = 0,
VDS = 0.8 Max. Rat., VGS = 0,
0.2 1.0 mA
0.2 1.0 mA
A
TC = 125° C
TC = 125° C
ID(on)
On-State Drain Current1
5.5
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
4.5
A
V
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 2.5 A
VDS(on) Static Drain-Source On-State
Voltage1
VDS(on) Static Drain-Source On-State
Voltage1
2.4 3.15
1.05
V
VGS = 10 V, ID = 3.0 A
VGS = 10 V, ID = 3.0 A
3.25 4.00
1.6
RDS(on) Static Drain-Source On-State
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 2.5 A
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 3.0 A,
TC = 125 C
RDS(on) Static Drain-Source On-State
Resistance1
VGS = 10 V, ID = 2.5 A,
TC = 125 C
2.0
2.9 3.3
DYNAMIC
DYNAMIC
) W (
) W (
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
3.0 3.6
S(W ) VDS 2 VDS(on), ID = 3.0 A
pF VGS = 0
gfs
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
2.5 2.8
700
90
S(W ) VDS 2 VDS(on), ID = 2.5 A
pF VGS = 0
Ciss
Coss
Crss
td(on)
tr
700
70
20
18
20
40
25
Ciss
Coss
Crss
td(on)
tr
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 175 V, ID @ 3.0 A
ns Rg = 10 W ,VGS = 10 V
ns
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 225 V, ID @ 2.5 A
ns Rg = 7.5 W , VGS = 10 V
ns
30
18
20
td(off)
tf
Turn-Off Delay Time
Fall Time
td(off)
tf
Turn-Off Delay Time
Fall Time
42
ns
25
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
Modified MOSPOWER
IS
Continuous Source Current
Modified MOSPOWER
D
D
- 5.5
A
- 4.5
A
(Body Diode)
Source Current1
symbol showing
G
(Body Diode)
Source Current1
symbol showing
G
ISM
the integral P-N
ISM
the integral P-N
- 22
A
- 18
A
S
S
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
TC = 25 C, IS = -5.5 A, VGS = 0
TC = 25 C, IS = -4.5 A, VGS = 0
TJ = 150 C, IF = IS,
VSD
VSD
trr
Diode Forward Voltage1
Diode Forward Voltage1
Reverse Recovery Time
TC = 25 C, IS = -4.5 A, VGS = 0
TC = 25 C, IS = -4 A, VGS = 0
TJ = 150 C, IF = IS,
- 1.6
- 2.5
V
V
- 1.4
- 2
V
V
470
ns
430
ns
dlF/ds = 100 A/ms
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
OM6405SD - OM6408SD
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter (Per Device)
Drain-Source Voltage
OM6405
100
OM6406
200
200
±9
OM6407
400
OM6408
500
500
±4.5
±3
Units
V
VDS
VDGR
Drain-Gate Voltage (RGS = 1 M )
100
400
V
2
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current
±14
±9.3
±30
±20
50
±5.5
±3.5
±20
A
2
Continuous Drain Current
±6
A
1
Pulsed Drain Current
±25
±20
50
±18
±20
50
A
VGS
Gate-Source Voltage
±20
V
PD @ TC = 25°C
PD @ TC = 100°C
Junction-To-Case
Maximum Power Dissipation
Maximum Power Dissipation
50
W
20
20
20
20
W
1
Linear Derating Factor
0.4
0.4
0.4
0.4
W/°C
W/°C
Junction-To-Ambient Linear Derating Factor
.0125
.0125
.0125
.0125
TJ
Operating and
Tstg
Storage Temperature Range
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Lead Temperature (1/16" from case for 10 secs.)
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitation = 16 Amps
300
300
300
300
THERMAL RESISTANCE (Per Device)
RthJC
RthJA
Junction-to-Case
2.5
80
°C/W
Junction-to-Ambient
°C/W Free Air Operation
POWER DERATING
MECHANICAL OUTLINE
90
75
3.1
RqJC=2.5°C/W
60
45
30
15
0
0
25 50 75 100 125 150 175
C - CASE TEMPERATURE (C°)
T
Unless otherwise specified, the general tolerance is ±.010.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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