OMD38L60ML [ETC]
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084 ; 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 76A I(C ) | M : ML111MW084\n型号: | OMD38L60ML |
厂家: | ETC |
描述: | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084
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文件: | 总4页 (文件大小:257K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
OMD500T
Power Field-Effect Transistor, 11A I(D), 500V, 0.43ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, MOD, 12 PIN
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OMD500V
Power Field-Effect Transistor, 11A I(D), 500V, 0.43ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, MOD, 12 PIN
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