OT410T [ETC]
NPN Silicon Phototransistor; NPN硅光电晶体管
| 型号： | OT410T |
| 厂家： | 
ETC |
| 描述： | NPN Silicon Phototransistor |
| 文件： | 总1页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Phototransistor
Type OT 410D and OT 410T
The OT410 sensors consist
of a high gain NPN silicon
photo transistor mounted in
hermetically sealed TO-46
package. These sensors are
ideally suited for hostile
environment operation. The
OT410D features a domed
lens and the OT410T a flat
window.
TO - 46 Package
•
•
Hermetically Sealed Device ideal for hostile
environments
High Sensitivity
•
Dimensions in mm
Specifications:
Operating Temperature Range
-55°C to 125°C
PARAMETERS
SYMBOL MIN.
3 (1.5)
5 (2)
TYP MAX. UNITS
Light Current
H = 1mW/cm
OT 410D(T)-1
mA
15 (6) mA
mA
2
OT 410D(T)-2
OT 410D(T)-3
I
C(ON)
12 (4)
Dark Current V
= 10V, H = 0
I
40
nA
V
CE
CED
Collector Emitter Voltage
Emitter Collector Voltage
V
V
V
35
6
CED
V
ECD
Saturation Voltage I = 1mA
0.50
V
C
CE(SAT)
Angular Response
OT 410D
20
80
6
Deg.
Deg.
µS
µS
OT 410T
F
Rise or Fall Time
OT 410D-1
R
= 100W V
= 10V OT 410D-6
t , t
r f
8
L
CC
R h o p o in t C o m p o n e n t s L t d
Tel: +44 (0) 870 608 1188
Germany: +49 (0) 692 199 8606
Fax: +44 (0) 870 241 2255
Fax: +49 (0) 692 199 8595
Email: sales@rhopointcomponents.com
Website: www.rhopointcomponents.com
相关型号：
©2020 ICPDF网 联系我们和版权申明