PNZ108CLS [ETC]

PHOTOTRANSISTOR | NPN | 900NM PEAK WAVELENGTH | 20M | CAN-5.8 ; PHOTOTRANSISTOR | NPN | 900nm的峰值波长| 20M | CAN- 5.8\n


型号：	PNZ108CLS
厂家：	ETC
描述：	PHOTOTRANSISTOR \| NPN \| 900NM PEAK WAVELENGTH \| 20M \| CAN-5.8 PHOTOTRANSISTOR \| NPN \| 900nm的峰值波长\| 20M \| CAN- 5.8\n
文件：	总3页 (文件大小：56K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Phototransistors

PNZ108CL (PN108CL)

Silicon NPN Phototransistor

Unit : mm

For optical control systems

Features

High sensitivity : I_CE(L)= 3.5 mA (min.) (at L = 500 lx)

3-ø0.45±0.05

Wide directional sensitivity for easy use

Fast response : t_r= 5 µs (typ.)

2.54±0.25

1.0

Signal mixing capability using base pin

Small size (low in height) package

0.15

1.0

3˚

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

V_CBO

V_ECO

V_EBO

I_C

Ratings

Unit

Collector to emitter voltage

Collector to base voltage

Emitter to collector voltage

Emitter to base voltage

Collector current

1: Emitter

2: Base

2: Collector

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

100

T_opr

–25 to +85

–30 to +100

T_stg

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

Conditions

min

typ

max

Unit

µA

I_CEO

V_CE= 10V

0.05

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Rise time

I_CE(L)

V_CE= 10V, L = 500 lx^*1

3.5

λ_P

V_CE= 10V

900

Measured from the optical axis to the half power point

V_CC= 10V, I_CE(L)

deg.

t_r^*2

t_f^*2

µs 5mA

Fall time

R_L= 100Ω

µs

Collector saturation voltage

V_CE(sat)I_CE(L)= 1mA, L = 1000 lx^*1

0.3

0.6

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Classifications

Class

CE(L)

I_CE(L)(mA)

3.5 to 6.0

5.0 to 9.1

> 7.5

Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D).

Note) The part number in the parenthesis shows conventional part number.

Phototransistors

PNZ108CL

P_C— Ta

I_CE(L)— V_CE

I_CE(L)— L

120

100

10 ²

Ta = 25˚C

T = 2856K

V_CE= 10V

Ta = 25˚C

T = 2856K

L = 1500 lx

1000 lx

750 lx

500 lx

10 ^–1

250 lx

100 lx

10 ^–2

– 20

100

10 ²

10 ³

Ambient temperature Ta (˚C )

Collector to emitter voltage V_CE(V)

Illuminance L (lx)

I_CEO— Ta

I_CE(L)— Ta

Spectral sensitivity characteristics

10 ²

100

V_CE= 10V

L = 500 lx

T = 2856K

V_CE= 10V

Ta = 25˚C

10 ^–1

10 ^–2

– 20

10 ^–1

– 40

100

120

200

400

600

800

1000

1200

Ambient temperature Ta (˚C )

Wavelength λ (nm)

Directivity characteristics

t_r— I_CE(L)

t_f— I_CE(L)

0˚ 10˚ 20˚ 30˚

V_CC= 10V

Ta = 25˚C

V_CC= 10V

Ta = 25˚C

40˚

10 ⁴

10 ³

10 ⁴

10 ³

100

50˚

60˚

70˚

80˚

90˚

10 ²

R_L= 1kΩ

500Ω

100Ω

500Ω

100Ω

10 ^–1

10 ^–2

10 ^–1

10 ²

10 ^–2

10 ^–1

10 ²

Collector photo current I_CE(L)(mA)

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2001 MAR

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