PNZ115(PN115) [ETC]

PNZ115 (PN115) - Silicon NPN Phototransistor ; PNZ115 （ PN115 ） - 硅NPN光电晶体管


型号：	PNZ115(PN115)
厂家：	ETC
描述：	PNZ115 (PN115) - Silicon NPN Phototransistor PNZ115 （ PN115 ） - 硅NPN光电晶体管晶体光电晶体管光电晶体管
文件：	总3页 (文件大小：54K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Phototransistors

PNZ115 (PN115)

Silicon NPN Phototransistor

Unit : mm

4.5±0.3

4.2±0.3

For optical control systems

ø3.5±0.2

2.3 1.9

Features

High sensitivity

Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg.

(typ.)

3-0.45±0.2

0.45±0.2

Fast response : t_r= 5 µs (typ.)

Side-view type package

1.27

2 3

1.27

1.2

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

V_CBO

V_ECO

V_EBO

I_C

Ratings

Unit

1: Emitter

2: Collector

3: Base

Collector to emitter voltage

Collector to base voltage

Emitter to collector voltage

Emitter to base voltage

Collector current

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

100

T_opr

–25 to +85

–30 to +100

T_stg

Photo-

detectors

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

I_CEO

I_CE(L)

λ_P

Conditions

min

typ

0.02

4.5

900

max

Unit

µA

deg.

µs

V_CE= 10V

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Rise time

V_CE= 10V, L = 100 lx^*1

2.0

V_CE= 10V

t_r^*2

t_f^*2

Measured from the optical axis to the half power point

V_CC= 10V, I_CE(L)= 5mA

R_L= 100Ω

Fall time

µs

Collector saturation voltage V_CE(sat)I_CE(L)= 1mA, L = 1000 lx^*1

0.3

0.6

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Note) The part number in the parenthesis shows conventional part number.

Phototransistors

PNZ115

P_C— Ta

I_CE(L)— V_CE

I_CE(L)— L

120

100

10 ²

Ta = 25˚C

T = 2856K

V_CE= 10V

Ta = 25˚C

T = 2856K

L =250 lx

100 lx

10 ^–1

50 lx

10 lx

10 ^–2

– 20

100

10 ²

10 ³

Ambient temperature Ta (˚C )

Collector to emitter voltage V_CE(V)

Illuminance L (lx)

I_CEO— Ta

I_CE(L)— Ta

Spectral sensitivity characteristics

10 ²

100

V_CE= 10V

Ta = 25˚C

V_CE= 10V

T = 2856K

V_CE= 10V

L = 100 lx

10 ^–1

10 ^–2

– 20

10 ^–1

– 40

100

120

200

400

600

800

1000

1200

Ambient temperature Ta (˚C )

Wavelength λ (nm)

Directivity characteristics

t_r— I_CE(L)

t_f— I_CE(L)

0˚

100

10˚

20˚

V_CC= 10V

Ta = 25˚C

V_CC= 10V

Ta = 25˚C

10 ³

30˚

40˚

10 ²

R_L= 1kΩ

500Ω

100Ω

500Ω

100Ω

50˚

60˚

70˚

80˚

90˚

10 ^–1

10 ^–2

10 ^–1

10 ^–2

10 ^–1

10 ²

10 ^–2

10 ^–1

10 ²

Collector photo current I_CE(L)(mA)

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