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PUMH9,165 [ETC]

TRANS 2NPN PREBIAS 0.3W 6TSSOP;
PUMH9,165
型号： PUMH9,165
厂家： ETC    ETC
描述：

TRANS 2NPN PREBIAS 0.3W 6TSSOP

开关 光电二极管 晶体管
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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
understanding,  
Kind regards,  
Team Nexperia  
PEMH9; PIMH9; PUMH9  
NPN/NPN resistor-equipped transistors;  
R1 = 10 k, R2 = 47 k  
Rev. 5 — 12 November 2013  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted  
Device (SMD) plastic packages.  
Table 1.  
Product overview  
Type number Package  
NXP  
PNP/PNP  
complement  
NPN/PNP  
complement  
Package  
configuration  
JEITA  
PEMH9  
PIMH9  
PUMH9  
SOT666  
-
PEMB9  
-
PEMD9  
-
ultra small and flat lead  
small  
SOT457 SC-74  
SOT363 SC-88  
PUMB9  
PUMD9  
very small  
1.2 Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
Simplifies circuit design  
1.3 Applications  
Low current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors in digital applications  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
IO  
collector-emitter voltage open base  
output current  
-
-
50  
V
-
-
100  
13  
mA  
k  
R1  
bias resistor 1 (input)  
bias resistor ratio  
7
10  
4.7  
R2/R1  
3.7  
5.7  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
2. Pinning information  
Table 3.  
Pinning  
Pin  
1
Description  
Simplified outline  
Graphic symbol  
GND (emitter) TR1  
input (base) TR1  
output (collector) TR2  
GND (emitter) TR2  
input (base) TR2  
output (collector) TR1  
6
5
4
6
5
4
2
3
R1  
R2  
4
TR2  
5
TR1  
1
2
3
6
R2  
R1  
001aab555  
1
2
3
sym063  
3. Ordering information  
Table 4.  
Ordering information  
Type number Package  
Name  
Description  
plastic surface-mounted package; 6 leads  
Version  
SOT666  
SOT457  
SOT363  
PEMH9  
PIMH9  
PUMH9  
-
SC-74  
SC-88  
plastic surface-mounted package (TSOP6); 6 leads  
plastic surface-mounted package; 6 leads  
4. Marking  
Table 5.  
Marking codes  
Type number  
PEMH9  
Marking code[1]  
H9  
PIMH9  
H9  
PUMH9  
H*9  
[1] * = placeholder for manufacturing site code  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
2 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Per transistor  
VCBO  
VCEO  
VEBO  
VI  
collector-base voltage  
open emitter  
open base  
-
-
-
50  
50  
6
V
V
V
collector-emitter voltage  
emitter-base voltage  
input voltage  
open collector  
positive  
-
-
-
-
+40  
6  
V
negative  
V
IO  
output current  
100  
100  
mA  
mA  
ICM  
peak collector current  
single pulse;  
tp 1 ms  
Ptot  
total power dissipation  
PEMH9 (SOT666)  
PIMH9 (SOT457)  
PUMH9 (SOT363)  
Tamb 25 C  
[1]  
[1]  
[1]  
-
-
200  
250  
200  
mW  
mW  
mW  
Per device  
Ptot  
total power dissipation  
PEMH9 (SOT666)  
PIMH9 (SOT457)  
Tamb 25 C  
[1]  
[1]  
[1]  
-
300  
mW  
mW  
mW  
C  
400  
PUMH9 (SOT363)  
junction temperature  
ambient temperature  
storage temperature  
-
300  
Tj  
-
150  
Tamb  
Tstg  
55  
65  
+150  
+150  
C  
C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
3 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
006aac766  
500  
P
tot  
(mW)  
(1)  
(2)  
400  
300  
200  
100  
0
-75  
-25  
25  
75  
125  
175  
(°C)  
T
amb  
(1) SOT457; FR4 PCB, standard footprint  
(2) SOT363 and SOT666; FR4 PCB, standard footprint  
Fig 1. Per device: Power derating curves  
6. Thermal characteristics  
Table 7.  
Symbol  
Per transistor  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
Rth(j-a)  
thermal resistance from  
in free air  
junction to ambient  
PEMH9 (SOT666)  
PIMH9 (SOT457)  
PUMH9 (SOT363)  
[1]  
[1]  
[1]  
-
-
-
-
-
-
625  
500  
625  
K/W  
K/W  
K/W  
Per device  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
[1]  
[1]  
[1]  
PEMH9 (SOT666)  
PIMH9 (SOT457)  
PUMH9 (SOT363)  
-
-
-
-
-
-
417  
313  
417  
K/W  
K/W  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
4 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
006aac751  
3
10  
duty cycle = 1  
Z
th(j-a)  
0.75  
0.33  
(K/W)  
0.5  
0.2  
2
10  
0.1  
0.02  
0
0.05  
0.01  
10  
1
10  
-5  
-4  
-3  
-2  
-1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for  
PEMH9 (SOT666); typical values  
006aac767  
3
10  
duty cycle = 1  
Z
th(j-a)  
0.75  
(K/W)  
0.5  
0.2  
0.33  
2
10  
0.1  
0.05  
0.01  
0.02  
10  
0
1
10  
-5  
-4  
-3  
-2  
-1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for  
PIMH9 (SOT457); typical values  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
5 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
006aac750  
3
10  
duty cycle = 1  
Z
th(j-a)  
0.75  
0.33  
(K/W)  
0.5  
0.2  
2
10  
0.1  
0.05  
0.01  
0.02  
0
10  
1
10  
-5  
-4  
-3  
-2  
-1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for  
PUMH9 (SOT363); typical values  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
6 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
7. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 C unless otherwise specified.  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max  
Unit  
ICBO  
collector-base cut-off  
current  
VCB = 50 V; IE = 0 A  
-
-
100  
nA  
ICEO  
collector-emitter cut-off VCE = 30 V; IB = 0 A  
-
-
-
-
100  
5
nA  
current  
VCE = 30 V; IB = 0 A;  
A  
Tj = 150 C  
IEBO  
emitter-base cut-off  
current  
VEB = 5 V; IC = 0 A  
-
-
150  
A  
hFE  
DC current gain  
VCE = 5 V; IC = 5 mA  
100  
-
-
-
-
VCEsat  
collector-emitter  
IC = 5 mA; IB = 0.25 mA  
100  
mV  
saturation voltage  
VI(off)  
VI(on)  
R1  
off-state input voltage  
on-state input voltage  
bias resistor 1 (input)  
bias resistor ratio  
VCE = 5 V; IC = 100 A  
-
0.7  
0.8  
10  
4.7  
-
0.5  
-
V
VCE = 0.3 V; IC = 1 mA  
1.4  
7
V
13  
5.7  
2.5  
k  
R2/R1  
Cc  
3.7  
-
collector capacitance  
VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
pF  
[1]  
fT  
transition frequency  
VCE = 5 V; IC = 10 mA;  
f = 100 MHz  
-
230  
-
MHz  
[1] Characteristics of built-in transistor  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
7 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
006aac784  
006aac785  
3
10  
1
(1)  
h
FE  
(2)  
V
CEsat  
(V)  
(3)  
2
10  
(1)  
-1  
10  
(2)  
(3)  
10  
-2  
1
10  
10  
-1  
2
-1  
2
1
10  
10  
10  
1
10  
10  
I
C
(mA)  
I (mA)  
C
VCE = 5 V  
amb = 100 C  
IC/IB = 20  
(1) Tamb = 100 C  
(1)  
T
(2) Tamb = 25 C  
(3) Tamb = 40 C  
(2) Tamb = 25 C  
(3) Tamb = 40 C  
Fig 5. DC current gain as a function of collector  
current; typical values  
Fig 6. Collector-emitter saturation voltage as a  
function of collector current; typical values  
006aac786  
006aac787  
10  
10  
V
V
I(on)  
I(off)  
(V)  
(V)  
(1)  
(1)  
1
1
(2)  
(2)  
(3)  
(3)  
-1  
-1  
10  
10  
-1  
2
-1  
10  
1
10  
10  
10  
1
10  
I
C
(mA)  
I
C
(mA)  
VCE = 0.3 V  
(1) Tamb = 40 C  
(2) Tamb = 25 C  
VCE = 5 V  
(1) Tamb = 40 C  
(2) Tamb = 25 C  
(3)  
Tamb = 100 C  
(3) Tamb = 100 C  
Fig 7. On-state input voltage as a function of  
collector current; typical values  
Fig 8. Off-state input voltage as a function of  
collector current; typical values  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
8 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
006aac788  
006aac757  
3
3
10  
C
c
(pF)  
f
T
(MHz)  
2
1
0
2
10  
10  
10  
-1  
2
0
10  
20  
30  
40  
V
50  
(V)  
1
10  
10  
I (mA)  
C
CB  
f = 1 MHz; Tamb = 25 C  
VCE = 5 V; Tamb = 25 C  
Fig 9. Collector capacitance as a function of  
collector-base voltage; typical values  
Fig 10. Transition frequency as a function of collector  
current; typical values of built-in transistor  
8. Test information  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
9 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
9. Package outline  
3.1  
2.7  
1.1  
0.9  
1.7  
1.5  
0.6  
0.5  
6
5
4
6
5
4
0.6  
0.2  
0.3  
0.1  
3.0 1.7  
2.5 1.3  
1.7 1.3  
1.5 1.1  
pin 1 index  
pin 1 index  
1
2
3
1
2
3
0.26  
0.10  
0.18  
0.08  
0.40  
0.25  
0.27  
0.17  
0.95  
0.5  
1
1.9  
Dimensions in mm  
04-11-08  
Dimensions in mm  
04-11-08  
Fig 11. Package outline PEMH9 (SOT666)  
Fig 12. Package outline PIMH9 (SOT457)  
2.2  
1.8  
1.1  
0.8  
0.45  
0.15  
6
5
4
2.2 1.35  
2.0 1.15  
pin 1  
index  
1
2
3
0.25  
0.10  
0.3  
0.2  
0.65  
1.3  
Dimensions in mm  
06-03-16  
Fig 13. Package outline PUMH9 (SOT363)  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
10 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
10. Soldering  
3.45  
1.95  
0.55  
(6×)  
solder lands  
solder resist  
0.45  
(6×)  
0.95  
0.95  
3.3 2.825  
solder paste  
occupied area  
0.7  
Dimensions in mm  
(6×)  
0.8  
(6×)  
2.4  
sot457_fr  
Fig 14. Reflow soldering footprint PIMH9 (SOT457)  
5.3  
1.5  
(4×)  
solder lands  
solder resist  
occupied area  
1.475  
1.475  
0.45  
(2×)  
5.05  
Dimensions in mm  
preferred transport  
direction during soldering  
1.45  
(6×)  
2.85  
sot457_fw  
Fig 15. Wave soldering footprint PIMH9 (SOT457)  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
11 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
2.65  
solder lands  
0.4 (2×)  
1.5  
2.35  
0.6  
(4×)  
0.5  
(4×)  
solder resist  
solder paste  
0.5  
(4×)  
0.6  
(2×)  
occupied area  
0.6  
(4×)  
Dimensions in mm  
1.8  
sot363_fr  
Fig 16. Reflow soldering footprint PUMH9 (SOT363)  
1.5  
solder lands  
solder resist  
occupied area  
2.5  
0.3  
4.5  
1.5  
Dimensions in mm  
preferred transport  
direction during soldering  
1.3  
1.3  
2.45  
5.3  
sot363_fw  
Fig 17. Wave soldering footprint PUMH9 (SOT363)  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
12 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
2.75  
2.45  
2.1  
1.6  
solder lands  
0.4  
(6×)  
0.3  
(2×)  
0.25  
(2×)  
placement area  
0.538  
0.55  
1.075  
1.7  
2
(2×)  
solder paste  
occupied area  
0.325 0.375  
(4×) (4×)  
Dimensions in mm  
1.7  
0.45  
0.6  
(4×)  
(2×)  
0.5  
0.65  
(4×)  
(2×)  
sot666_fr  
Fig 18. Reflow soldering footprint PEMH9 (SOT666)  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
13 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
11. Revision history  
Table 9.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change Supersedes  
notice  
PEMH9_PIMH9_PUMH9 v.5 20131112  
Product data sheet  
-
PIMH9_PUMH9_PEMH9 v.4  
Modifications:  
• The format of this document has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
• Legal texts have been adapted to the new company name where appropriate.  
• Section 1 “Product profile”: updated  
• Section 4 “Marking”: updated  
• Figure 1 to 10: added  
• Section 5 “Limiting values”: updated  
• Section 6 “Thermal characteristics”: updated  
• Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined  
to VI(off) off-state input voltage, ICEO updated, fT added  
• Section 8 “Test information”: added  
• Section 9 “Package outline”: superseded by minimized package outline drawings  
• Section 10 “Soldering”: added  
• Section 12 “Legal information”: updated  
PIMH9_PUMH9_PEMH9 v.4 20040414  
Product data sheet  
-
PIMH9_PUMH9_PEMH9 v.3  
-
PIMH9_PUMH9_PEMH9 v.3 20030915  
Product specification  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
14 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use in automotive applications — This NXP  
12.2 Definitions  
Semiconductors product has been qualified for use in automotive  
applications. Unless otherwise agreed in writing, the product is not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
15 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PEMH9_PIMH9_PUMH9  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 5 — 12 November 2013  
16 of 17  
PEMH9; PIMH9; PUMH9  
NXP Semiconductors  
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9  
Quality information . . . . . . . . . . . . . . . . . . . . . . 9  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 16  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2013.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 12 November 2013  
Document identifier: PEMH9_PIMH9_PUMH9  

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