Q62702F1576 [ETC]
TRANSISTOR R.F SOT343 ; 晶体管R.F SOT343\n
| 型号： | Q62702F1576 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR R.F SOT343
|
| 文件： | 总7页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP 196W
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5GHz at collector currents from
20mA to 80mA
• Power amplifier for DECT and PCN systems
• f = 7.5GHz
T
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 196W RIs
Q62702-F1576
1 = E 2 = C 3 = E 4 = B SOT-343
Maximum Ratings
Parameter
Symbol
Values
12
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CEO
V
CES
V
CBO
V
EBO
V
20
20
2
I
I
100
12
mA
mW
°C
C
Base current
B
Total power dissipation
P
tot
≤
T
69 °C
700
S
Junction temperature
Ambient temperature
Storage temperature
T
T
T
150
j
- 65 ... + 150
- 65 ... + 150
A
stg
Thermal Resistance
1)
≤
Junction - soldering point
R
thJS
115
K/W
1) T is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group
1
Dec-12-1996
BFP 196W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CEO
I = 1 mA, I = 0
12
-
-
C
B
Collector-emitter cutoff current
= 20 V, V = 0
I
I
I
µA
nA
µA
-
CES
V
CE
-
-
100
100
1
BE
Collector-base cutoff current
= 10 V, I = 0
CBO
V
CB
-
-
E
Emitter-base cutoff current
= 1 V, I = 0
EBO
V
EB
-
-
C
DC current gain
I = 50 mA, V = 8 V
h
FE
50
100
200
C
CE
Semiconductor Group
2
Dec-12-1996
BFP 196W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
f
GHz
pF
T
I = 70 mA, V = 8 V, f = 500 MHz
5
-
7.5
1
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
C
F
cb
ce
eb
V
CB
1.4
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
-
0.36
3.7
-
-
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
-
Noise figure
dB
I = 20 mA, V = 8 V, Z = Z
C
CE
S
Sopt
Sopt
f = 900 MHz
-
-
1.5
2.5
-
-
f = 1.8 GHz
Power gain
2)
G
ma
I = 50 mA, V = 8 V, Z = Z
C
CE
S
Z = Z
L
Lopt
f = 900 MHz
f = 1.8 GHz
-
-
17.5
11.5
-
-
2
Transducer gain
|S
|
21e
Ω
I = 50 mA, V = 8 V, Z =Z = 50
C
CE
S
L
f = 900 MHz
-
-
12.5
6.5
-
-
f = 1.8 GHz
2
1/2
2) G = |S /S | (k-(k -1) )
ma
21 12
Semiconductor Group
3
Dec-12-1996
BFP 196W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.7264
20
fA
V
BF =
125
-
NF =
0.80012
-
VAF =
NE =
IKF =
BR =
IKR =
RB =
0.4294
10.584
A
-
ISE =
NR =
ISC =
IRB =
RC =
119.22
0.94288
4.8666
fA
-
1.1766
3.8128
0.88299
1
-
VAR =
NC =
RBM =
CJE =
TF =
V
0.019511 A
fA
Ω
Ω
V
-
-
1.2907
0.75103
0.7308
0.44322
0
0.084011 mA
Ω
fF
ps
mA
V
Ω
-
RE =
0.27137
0.33018
0.1
13.325
23.994
1.9775
0.73057
2.2413
0
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
V
fF
-
ITF =
VJC =
TR =
deg
-
1667
0.3289
0
0.29998
0.75
ns
-
fF
-
V
eV
K
MJS =
XTI =
0
1.11
3
-
0.50922
-
300
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.43
0.47
0.26
0.12
0.06
0.36
68
nH
nH
nH
nH
nH
nH
fF
LBO =
LEI =
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
46
fF
232
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-12-1996
BFP 196W
Total power dissipation P = f (T *, T )
tot
A
S
* Package mounted on epoxy
800
mW
Ptot
600
TS
500
400
300
TA
200
100
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f (t )
Permissible Pulse Load P
/P
= f (t )
thJS
p
totmax totDC
p
10 2
10 3
K/W
RthJS
Ptotmax/PtotDC
-
D = 0
10 2
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
5
Dec-12-1996
BFP 196W
Collector-base capacitance C = f (V )
Transition frequency f = f (I )
cb
CB
T
C
V
BE
= v = 0, f = 1MHz
be
V
= Parameter
CE
1.7
pF
7.5
GHz
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10V
5V
3V
1.4
Ccb
fT
2V
1.2
1.0
0.8
0.6
0.4
1V
0.7V
0.2
0.0
0.5
0.0
0
4
8
12
16
V
VR
22
0
20
40
60
80
mA
IC
120
Power Gain G , G = f(I )
Power Gain G , G = f(I )
ma ms C
ma
ms
C
f = 0.9GHz
= Parameter
f = 1.8GHz
V = Parameter
CE
V
CE
20
dB
18
17
16
15
14
13
12
11
10
12
dB
10
9
8V
3V
2V
G
G
8V
3V
2V
8
7
1V
1V
6
5
4
0.7V
9
8
0.7V
0
20
40
60
80
mA
IC
120
0
20
40
60
80
mA
IC
120
Semiconductor Group
6
Dec-12-1996
BFP 196W
Power Gain G , G = f(V ):_____
Intermodulation Intercept Point IP =f(I )
ma
ms
CE
3
C
2
|S | = f(V ):---------
(3rd order, Output, Z =Z =50 )
Ω
S L
21
CE
f = Parameter
V
= Parameter, f = 900MHz
CE
18
38
dBm
34
IC=50mA
0.9GHz
8V
dB
14
12
10
8
G
IP3
5V
32
0.9GHz
1.8GHz
30
3V
28
26
24
2V
1.8GHz
6
22
20
4
18
2
0
1V
16
14
0
1
2
3
4
5
6
7
8
V
VCE
10
0
20
40
60
80
mA
IC
120
2
Power Gain G , G = f(f)
Power Gain |S | = f(f)
21
ma
ms
V
= Parameter
V
= Parameter
CE
CE
32
32
IC=50mA
IC=50mA
dB
28
26
24
22
20
18
16
14
12
10
8
dB
24
20
16
12
8
G
S21
4
8V
8V
0
1V
0.7V
1V
6
4
0.7V
-4
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
Semiconductor Group
7
Dec-12-1996
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