Q62703-N221 [ETC]
EINFACHKOPPLER MIT TRANSISTORAUSGANG ; EINFACHKOPPLER MIT TRANSISTORAUSGANG\n
| 型号： | Q62703-N221 |
| 厂家： | 
ETC |
| 描述： | EINFACHKOPPLER MIT TRANSISTORAUSGANG
|
| 文件： | 总4页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH618A/628A
PHOTOTRANSISTOR, 5.3 kV TRIOS
LOW CURRENT INPUT
OPTOCOUPLER
Package Dimensions in Inches (mm)
2
1
SFH618A
FEATURES
•
Pin One
I.D.
Anode
Collector
Emitter
4
3
1
2
Very High CTR at I =1 mA, V =0.5 V
F
CE
– SFH618A-2, 63–125%
.268 (6.81)
.255 (6.48)
Cathode
– SFH618A-3, 100–200%
– SFH618A-4, 160–320%
– SFH618A-5, 250–500%
– SFH628A-2, 63–200%
– SFH628A-3, 100–320%
– SFH628A-4, 160–500%
SFH628A
Anode/
Cathode
Collector
Emitter
4
3
1
2
3
4
Cathode/
Anode
.190 (4.83)
.179 (4.55)
.305
(7.75)
.045 (1.14)
.030 (.76)
•
Specified Minimum CTR at I =-0.5 mA
F
– SFH618A, V =1.5 V: ≥32% (typical 120%)
CE
.150 (3.81)
.130 (3.30)
– SFH628A, V =1.5 V: ≥50% (typical 160%)
CE
.135 (3.43
.115 (2.92
•
•
•
•
•
•
•
•
Good CTR Linearity Depending on Forward Current
Low CTR Degradation
4°
10 °
.040 (1.02)
.030 (.76 )
Typ.
Typ.
High Collector-Emitter Voltage, V
Isolation Test Voltage, 5300 VAC
=55 V
CEO
RMS
3°–9°
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
Low Coupling Capacitance
1.00 (2.54)
Typ.
Field-Effect Stable by TRIOS (TRansparent IOn Shield)
End-Stackable, 0.100"(2.54 mm) Spacing
High Common-Mode Interference Immunity
(Unconnected Base)
Maximum Ratings
Emitter
Reverse Voltage (SFH618A)6 V
DC Forward Current (SFH628A: ±) 50 mA
•
•
Underwriters Lab File #52744
VDE 0884 Available with Option 1
SMD Option — See SFH6186/6286 Data Sheet
Surge Forward Current (t ≤10 µs) (SFH628A: ±)2.5 A
P
Total Power Dissipation70 mW
Detector
Collector-Emitter Voltage55 V
Emitter-Collector Voltage7 V
Collector Current50 mA
APPLICATIONS
•
•
•
•
Telecom
Industrial Controls
Battery Powered Equipment
Office Machines
Collector Current (t ≤1 ms)100 mA
P
Total Power Dissipation150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
DESCRIPTION
The SFH618A/628A feature a high current transfer ratio, low
coupling capacitance and high isolation voltage. These cou-
plers have a GaAs infrared emitting diode emitter, which is
optically coupled to a silicon planar phototransistor detector,
and is incorporated in a plastic DIP-4 package.
part 2, Nov. 745300 VAC
Creepage≥7 mm
RMS
Clearance≥7 mm
The coupling devices are designed for signal transmission
between two electrically separated circuits.
Insulation Thickness between Emitter and Detector≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1175
The couplers are end-stackable with 2.54 mm spacing.
Therefore multicouplers can easily be implemented and con-
ventional multicouplers can be replaced.
Isolation Resistance
12
V =500 V, T =25°C≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C≥10
IO
A
Creepage and clearance distances of >8 mm are achieved
with option 6. This version complies with IEC 950 (DIN VDE
0805) for reinforced insulation up to an operation voltage of
Storage Temperature Range–55 to +150°C
Ambient Temperature Range–55 to +100°C
Junction Temperature100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm)260°C
400 V
or DC.
RMS
Specifications subject to change.
5–246
Characteristics (T =25°C)
A
Description
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
1.1
.01
1.5
10
V
I =5 mA
F
F
Reverse Current
Capacitance
SFH618A
I
V =6 V
R
R
SFH618A
SFH628A
C
25
45
pF
V =0 V, f=1 MHz
R
0
Thermal Resistance
R
1070
K/W
thJA
Detector
Collector-Emitter Leakage Current
I
10
7
200
nA
V =10 V
CE
CEO
Capacitance
Thermal Resistance
Package
C
pF
V =5 V, f=1 MHz
CE
CE
R
500
K/W
thJA
SFH618A-2
SFH618A-3
SFH618A-4
SFH618A-5
SFH628A-2
SFH628A-3
SFH628A-4
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.4
0.4
0.4
0.4
0.4
0.4
0.4
I =0.32 mA, I =1 mA
C F
I =0.5 mA, I =1 mA
C
F
Collector-Emitter Saturation Voltage
V
V
CESAT
I =0.8 mA, I =1 mA
C
F
I =1.25 mA, I =1 mA
C
F
I =0.5 mA, I =±1 mA
C
F
I =0.8 mA, I =±1 mA
C
F
Collector-Emitter Saturation Voltage
Coupling Capacitance
V
V
CESAT
I =1.25 mA, I =±1 mA
C
F
C
pF
%
C
SFH618A-2
SFH618A-2
SFH618A-3
SFH618A-3
SFH618A-4
SFH618A-4
SFH618A-5
SFH618A-5
SFH628A-2
SFH628A-2
SFH628A-3
SFH628A-3
SFH628A-4
SFH628A-4
63
125
200
320
500
200
320
500
I =1 mA, V =0.5 V
F CE
I /I
C
F
32
75
I =0.5 mA, V =1.5 V
F CE
100
50
I =1 mA, V =0.5 V
F CE
I /I
%
%
%
%
%
%
C
F
120
200
300
100
160
250
I =0.5 mA, V =1.5 V
F CE
160
80
I =1 mA, V =0.5 V
F CE
Coupling Transfer Ratio
I /I
C
F
I =0.5 mA, V =1.5 V
F
CE
250
125
63
I =1 mA, V =0.5 V
F CE
I /I
C
F
I =0.5 mA, V =1.5 V
F
CE
I =±1 mA, V =0.5 V
F
CE
I /I
C
F
32
I =±0.5 mA, V =1.5 V
F CE
100
50
I =±1 mA, V =0.5 V
F CE
I /I
Coupling Transfer Ratio
C
F
I =±0.5 mA, V =1.5 V
F
CE
160
80
I =±1 mA, V =0.5 V
F CE
I /I
C
F
I =±0.5 mA, V =1.5 V
F
CE
SFH618A/628A
5–247
Switching Times Measurement
Figure 1.Test circuit—SFH618A
Figure 2.Test circuit—SFH628A
±IF
RL
VCC = 5 V
VCC
IC
RL
Input
VOUT
47Ω
Figure 3. Switching times, typical
=5 V, I =2 mA, R =100Ω, T =25°C
Figure 4.Test circuit and waveforms
V
CC
C
L
A
INPUT
0
Turn-on Time
Rise Time
t
t
t
t
6.0
µs
µs
µs
µs
ON
R
t
t
off
on
3.5
5.5
5.0
t
pdon
t
pdof
t
t
r
r
t
d
Turn-off Time
Fall Time
OUTPUT
t
s
OFF
F
0
10%
50%
10%
50%
90%
90%
SFH618A/628A
5–248
Figure 1. Current transfer ratio (typ.)
=0.5 V, CTR=f(T )
Figure 2. Current transfer ratio (typ.)
V =1.5 V, CTR=f(T )
CE
Figure 3. Diode forward voltage
T =25°C, V =f(I )
V
CE
A
A
A
F
F
Figure 4. Diode forward voltage
I =1 mA, V =f(T )
Figure 5.Transistor capacitance
T =25°C, f=1 MHz, C =f(V
Figure 6. Output characteristics
T =25°C, =f(V , I )
)
F
F
A
A
CE
CE
A
CE
CE
F
Figure 7. Permissible forward
current diode I =f(T )
Figure 8. Permissible power
Figure 9. Switching times (typ.)
dissipation P
=f(T )
T =25°C, I =1 mA, V =5 V
F
A
TOT
A
A
F
CC
t
, t , t , t =f(R )
on
r off f L
SFH618A/628A
5–249
相关型号：
Q62703-P0331
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package
INFINEON
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