RBO40-40G-TR [ETC]

REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO) ; 反转电池和过电压保护电路（ RBO ）\n


型号：	RBO40-40G-TR
厂家：	ETC
描述：	REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO) 反转电池和过电压保护电路（ RBO ）\n 电池 PC
文件：	总10页 (文件大小：270K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RBO40-40G/T

REVERSED BATTERY AND

OVERVOLTAGE PROTECTION

Application Specific Discretes

A.S.D.™

FEATURES

■

PROTECTION AGAINST “LOAD DUMP” PULSE

■

40A DIODE TO GUARD AGAINST BATTERY

REVERSAL

■

MONOLITHIC STRUCTURE FOR GREATER

RELIABILITY

D²PAK

RBO40-40G

■

BREAKDOWN VOLTAGE : 24 V min.

CLAMPING VOLTAGE : ± 40 V max.

COMPLIANT WITH ISO / DTR 7637

DESCRIPTION

Designed to protect against battery reversal and

load dump overvoltages in automotive applica-

tions, this monolithic component offers multiple

functions in the same package :

TO220-AB

RBO40-40T

D1 : reversed battery protection

T1 : clamping against negative overvoltages

T2 : Transil function against “load dump” effect.

FUNCTIONAL DIAGRAM

TM : TRANSIL and ASD are trademarks of STMicroelectronics.

September 2003 - Ed:5

1/10

RBO40-40G / RBO40-40T

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

I_FSM

Non repetitive surge peak forward current

(Diode D1)

tp = 10 ms

Tc = 75°C

120

I_F

DC forward current (Diode D1)

V_PP

Peak load dump voltage (see note 1and 2)

5 pulses (1 minute between each pulse)

P_PP

Peak pulse power between Input and Output

10/1000 µs

1500

°C

(Transil T1)

Tj initial = 25°C

T_stg

Storage temperature range

Maximum junction temperature

- 40 to + 150

150

T_L

Maximum lead temperature for soldering during 10 s

at 4.5mm from case for TO220-AB

260

Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit.

Note 2 : see Load Dump curves.

THERMAL RESISTANCE

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

RBO40-40G

RBO40-40T

1.0

°C/W

Rth (j-a)

Junction to ambient

RBO40-40T

°C/W

I32

I13

I_R32

I_{R M}32

V32

31 V 31

V13

V_RM32 V_{B R}32 V_{C L}32

Ipp31

Ex :V 13 . between Pin 1 and Pin 3

32 . between Pin 3 and Pin 2

2/10

RBO40-40G / RBO40-40T

Symbol

_RM31/V_RM32Stand-off voltage Transil T1 / Transil T2.

V_BR31/V_BR32Breakdown voltage Transil T1 / Transil T2.

I_R31/I_R32

Leakage current Transil T1 / Transil T2.

V_CL31/V_CL32Clamping voltage Transil T1 / Transil T2.

Parameter

V_F13

I_PP

Forward voltage drop Diode D1.

Peak pulse current.

αT

Temperature coefficient of V_BR.

C₃₁/C₃₂

C₁₃

Capacitance Transil T1 / Transil T2.

Capacitance of Diode D1

ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < T_amb< + 85°C)

Value

Unit

Symbol

Test Conditions

Min.

Typ. Max.

V_{F 13}

C₁₃

I_F= 40 A

1.9

1.45

I_F= 20A

I_F= 1 A

I_F= 100 mA

F = 1MHz V_R= 0 V

0.95

3000

ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < T_amb< + 85°C)

Value

Symbol

Test Conditions

Unit

Min.

Typ. Max.

V_{BR 31}

I_{RM 31}

V_{CL 31}

α T

I_R= 1 mA

I_R= 1 mA, T_amb= 25°C

V_RM= 20 V

100

µA

V_RM= 20 V, T_amb= 25°C

I_PP= 37.5A, Tj initial = 25°C

Temperature coefficient of V_BR

µA

10/1000µs

10^-4/°C

C ₃₁

F = 1MHz

V_R= 0 V

3000

ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < T_amb< + 85°C)

Value

Symbol

Test Conditions

Unit

Min.

Typ. Max.

V_{BR 32}

I_{RM 32}

V_{CL 32}

α T

I_R= 1 mA

I_R= 1 mA, T_amb= 25°C

V_RM= 20 V

100

µA

V_RM= 20 V, T_amb= 25°C

I_PP= 20 A (note 1)

µA

Temperature coefficient of V_BR

10^-4/°C

C₃₂

F = 1MHz

V_R= 0 V

8000

Note 1 : One pulse, see pulse definition in load dump test generator circuit.

3/10

RBO40-40G / RBO40-40T

PRODUCT DESCRIPTION

The RBO has 3 functions integrated on the same

chip.

D1 : “Diode function” in order to protect against

reversed battery operation.

T2 : “Transil function” in order to protect against

positive surge generated by electric systems

(ignition, relay. ...).

T1 : Protection for motor drive application

(See below).

BASIC APPLICATION

* The monolithic multi-function protection

(RBO) has been developed to protect sen-

sitive semiconductors in car electronic

modules against both overvoltage and

battery reverse.

* In addition, the RBO circuit prevents

overvoltages generated by the module from

affecting the car supply network.

MOTOR DRIVER APPLICATION

BATTERY

Filter

MOTOR

RBO

DEVICE

MOTOR CONTROL

In this application, one half of the motor drive circuit is supplied through the “RBO” and is thus protected

as per its basic function application.

The second part is connected directly to the “car supply network” and is protected as follows :

- For positive surges : T2 (clamping phase) and D1 in forward-biased.

- For negative surges : T1 (clamping phase) and T2 in forward-biased.

4/10

RBO40-40G / RBO40-40T

PINOUT configuration in D²PAK :

- Input (1) : Pin 1

- Output (3) : Pin 3

- Gnd (2) : Connected to base Tab

TAB

Marking

Logo, date code, RBO40-40G

PINOUT configuration in TO220AB :

- Input (1) : Pin 1

- Output (3) : Pin 3

- GND (2) : Connected to base Tab

Marking

Logo, date code, RBO40-40T

(TAB)

5/10

RBO40-40G / RBO40-40T

LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637.

Open circuit (voltage curve)

(pulse test n°5)

Corresponding current wave with D.U.T.

Ipp

Ipp/2

U(V)

offset

10% / 13.5V

90%

10%

Vbat

tp = 40ms

Impulse

N°5

Vs (V)

66.5

13.5

Vbat (V)

Ri (Ω)

t (ms)

200 (*)

<10

tr (ms)

Number

60s between each pulse

(*) Generator setting

CALIBRATION METHOD FOR SCHAFFNER NSG 506 C

1) With open circuit (generator is in open circuit):

- calibrate Vs

2) With short circuit (generator is in short circuit):

- calibrate Ri (Ri = 2Ω)

3) With D.U.T.

- calibrate tp (tp = 40ms @ Ipp/2)

Typical Voltage curve (open circuit)

Typical Voltage and Current curve with D.U.T.

typ. Vpp

typ. VCL

20ms/div.

5.0V/div.

Ipp

V_Bat

20ms/div.

10.0V/div.

20ms/div.

3A/div.

6/10

RBO40-40G / RBO40-40T

Fig. 1 : Peak pulse power versus exponential

pulse duration (Tj initial = 85°C).

Fig. 2-1 : Clamping voltage versus peak pulse

current (Tj initial = 85°C).

Exponential waveform tp = 40 ms and tp = 1 ms

(TRANSIL T2).

CL(V)

Ppp(kW)

10.0

45.0

42.5

40.0

37.5

35.0

32.5

30.0

5.0

Transil T2

2.0

1.0

0.5

tp = 40ms

Transil T1

tp = 1ms

0.2

0.1

tp(ms)

Ipp(A)

100

0.2

0.5

10 20

50 100

0.1

Fig. 2-2 : Clamping voltage versus peak pulse

current (Tj initial = 85°C).

Fig. 3 : Relative variation of peak pulse power

versus junction temperature.

Exponential waveform tp = 1 ms and tp = 20 µs

(TRANSIL T1).

Ppp[Tj]/Ppp[Tj initial=85°C]

VCL(V)

1.20

1.00

0.80

0.60

0.40

p = 1ms

tp = 20µs

0.20

Tj initial (°C)

(

0.00

10 20

50 100 200

500

100

125

150

175

7/10

RBO40-40G / RBO40-40T

Fig. 4 : Relative variation of thermal impedance

junction to case versus pulse duration.

Fig. 5-1 : Peak forward voltage drop versus peak

forward current (typical values) - (TRANSIL T2).

Zth(j-c)/Rth(j-c)

FM(V)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.0

0.5

0.2

Tj = 25°C

Tj = 150°C°

IFM(A)

tp (s)

0.1

0.1 0.2

0.5

50 100

1E-3

1E-2

1E-1

1E+0

1E+1

Fig. 6 : Relative variation of leakage current

versus junction temperature.

Fig. 5-2 : Peak forward voltage drop versus peak

forward current (typical values) - (DIODE D1).

FM(V)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Tj = 25°C

Tj = 150°C°

IFM(A)

0.2

0.5

10 20

50 100

0.1

ORDERING INFORMATION

RBO 40 - 40 G

Reverse Battery &

Overvoltage Protection

V_CL= 40V

Package:

G = D²PAK

T = TO-220AB

I_F(AV)= 40A

8/10

RBO40-40G / RBO40-40T

DIMENSIONS

PACKAGE MECHANICAL DATA

D²PAK Plastic

REF.

Millimeters

Inches

Min. Typ. Max. Min. Typ. Max.

4.30

4.60 0.169

2.69 0.098

0.23 0.001

0.93 0.027

0.181

0.106

0.009

0.037

A1 2.49

A2 0.03

0.70

1.40

0.055

0.45

0.60 0.017

1.36 0.047

9.35 0.352

10.28 0.393

5.28 0.192

15.85 0.590

1.40 0.050

1.75 0.055

0.024

0.054

0.368

0.405

0.208

0.624

0.055

0.069

C2 1.21

8.95

10.00

4.88

15.00

1.27

2.0 MIN.

FLAT ZONE

1.40

0.40

0.016

0°

8°

0°

8°

FOOT-PRINT (in millimeters)

D²PAK

16.90

10.30

5.08

1.30

3.70

8.90

9/10

RBO40-40G / RBO40-40T

PACKAGE MECHANICAL DATA

TO-220AB Plastic

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

REF.

15.20

15.90 0.598

0.625

3.75

0.147

a2 13.00

10.00

14.00 0.511

10.40 0.393

0.88 0.024

1.32 0.048

4.60 0.173

0.70 0.019

2.72 0.094

2.70 0.094

6.60 0.244

3.85 0.147

0.551

0.409

0.034

0.051

0.181

0.027

0.107

0.106

0.259

0.151

b1 0.61

b2 1.23

4.40

c1 0.49

c2 2.40

2.40

6.20

3.75

I4 15.80 16.40 16.80 0.622 0.646 0.661

2.65

1.14

2.95 0.104

1.70 0.044

0.116

0.066

2.60

0.102

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-

thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany -

Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain -

Sweden - Switzerland - United Kingdom - United States

www.st.com

10/10

RBO40-40G-TR [ETC]

相关型号：

RBO40-40M

RBO40-40M-TR

RBO40-40T

RBOX100

RBOX101-4COM

RBOX101-6COM

RBOX103

RBOX104

RBOX111-4COM

RBOX120-2COM

RBOX120-2COM-FL1.1G

RBOX120-2COM-FL1.33G