S80016LK7MK7FB-8A [ETC]

SYVCHRONOUS DRAM; SYVCHRONOUS DRAM
S80016LK7MK7FB-8A
型号: S80016LK7MK7FB-8A
厂家: ETC    ETC
描述:

SYVCHRONOUS DRAM
SYVCHRONOUS DRAM

动态存储器
文件: 总9页 (文件大小:362K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
128Mb: x4, x8, x16  
SDRAM 3.3V  
ICC OPERATING CONDITIONS AND MAXIMUM LIMITS: Vdd = 3.3V ± 10%V, Temp. = 25° to 70 °C  
Supply Current  
OPERATING CURRENT: ACTIVE mode, burst = 1, READ or WRITE, tRC > tRC  
(MIN), one bank active, CL=3  
Symbol  
Icc1  
-75A  
165  
-8A  
140  
Units  
mA  
Notes  
1, 2, 3, 4  
STANDBY CURRENT: POWER-DOWN mode, CKE = LOW,  
Standard parts  
Idd2  
9
9
mA  
32  
no accesses in progress  
Self refresh parts  
Idd2  
Icc3  
Icc4  
3
75  
75  
3
60  
50  
mA  
mA  
mA  
32  
1, 2, 3, 4  
1, 2, 3, 4  
STANDBY CURRENT: CS# = HIGH, CKE = HIGH, all banks idle  
STANDBY CURRENT: CS# = HIGH, CKE = HIGH, all banks active after tRCD met,  
no accesses in progress.  
OPERATING CURRENT: BURST mode after tRCD met, continuous burst, READ,  
WRITE, all banks active, CL=3  
Icc5  
165  
145  
mA  
1, 2, 3, 4  
AUTO REFRESH CURRENT tRC > tRC (MIN)  
AUTO REFRESH CURRENT tRC=15.6us  
SELF REFRESH CURRENT (Self refresh parts only, part M)  
CL = 3  
CL = 3  
Icc6  
Icc7  
Idd8  
265  
50  
3
245  
50  
3
mA  
mA  
mA  
1, 2, 3, 4  
1, 2, 3, 4  
Notes  
1. All voltages referenced to Vss.  
2. An initial pause of 100 ms is required after power-up, followed by two AUTO REFRESH commands, before proper device operation  
is ensure. (Vdd and VddQ must be powered-up simultaneously Vss and VssQ must be at the same potential.) The two AUTO  
REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded.  
3. Icc specifications are tested after the device is properly initialized. tCK= 10ns for –8 and tCK=7.5ns for –75A.  
PDF: 09005aef807827f6 / Source: 09005aef807825bd  
128Mb SDRAM  
Rev: 11/29/2004  
SpecTek reserves the right to change products or  
specifications without notice. Ó 2001, 2002, 2004 SpecTek  
3
www.spectek.com  
128Mb: x4, x8, x16  
SDRAM 3.3V  
AC ELECTRICAL CHARACTERISTICS: Vdd = 3.3V ± 10%V, Temp. = 25° to 70°C  
AC CHARACTERISTICS  
PARAMETER  
Access time from CLK (positive edge) CL = 3  
Access time from CLK (positive edge) CL = 2  
Address hold time  
Address setup time  
CLK high level width  
CLK low level width  
Clock cycle time CL = 3  
Clock cycle time CL = 2  
CKE hold time  
CKE setup time  
CS#, RAS#, CAS#, WE#, DQM hold time  
CS#, RAS#, CAS#, WE#, DQM setup time  
Data-in hold time  
-75A  
MIN  
-75A  
MAX  
5.4  
-8A  
MIN  
-8A  
MAX  
6
SYMBOL  
tAC  
UNITS  
ns  
NOTES  
tAC  
tAH  
tAS  
tCH  
tCL  
tCK  
tCK  
tCKH  
tCKS  
tCMH  
tCMS  
tDH  
N/A  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
0.8  
1.5  
2.5  
2.5  
7.5  
N/A  
0.8  
1.5  
0.8  
1.5  
0.8  
1.5  
1
2
3
3
10  
1
2
1
2
1
2
Data-in setup time  
tDS  
ns  
Data-out high impedance time  
Data-out low impedance time  
Data-out hold time  
ACTIVE to PRECHARGE command period  
AUTO REFRESH to ACTIVE command period  
ACTIVE to READ or WRITE delay  
Refresh period (4096 cycles)  
PRECHARGE command period  
ACTIVE bank A to bank B command period  
Transition time  
tHZ  
tLZ  
tOH  
tRAS  
tRC  
tRCD  
tREF  
tRP  
tRRD  
tT  
tWR  
tXSR  
tCCD  
tCKED  
tPED  
9
16K  
64  
2
9
16K  
64  
2
ns  
ns  
ns  
ns  
ns  
ns  
ms  
ns  
ns  
ns  
ns  
tCK  
tCK  
tCK  
tCK  
4
1
2.7  
44  
60  
22.5  
2
3
50  
80  
30  
22.5  
15  
0.3  
20  
8
1
1
1
30  
20  
0.3  
20  
8
1
1
1
Write recovery time  
3
Exit SELF REFRESH to ACTIVE command  
READ/WRITE command to READ/WRITE command  
CKE to clock disable or power down entry mode  
CKE to clock enable or power down exit setup  
1
2
2
AC ELECTRICAL CHARACTERISTICS: Vdd = 3.3V ± 10%V, Temp. = 25° to 70°C  
AC CHARACTERISTICS  
-75A  
-75A  
-8  
-8  
PARAMETER  
DQM to input data delay  
WRITE command to input data delay  
Data-in to ACTIVATE command w/ Auto precharge  
Data-in to precharge  
SYMBOL  
tDQD  
tDWD  
tDAL  
MIN  
MAX  
MIN  
MAX  
UNITS  
tCK  
tCK  
tCK  
tCK  
NOTES  
0
0
5
2
0
0
5
2
1
1
3
tDPL  
2, 3  
Last data-in to precharge command  
LOAD MODE REGISTER command to command  
Data-out to high impedance from precharge  
tRDL  
tMRD  
tROH  
2
2
3
2
2
3
tCK  
tCK  
tCK  
1
1
1
NOTES:  
1. Clocks required specified by JEDEC functionality and not dependent on any timing parameter.  
2. Timing actually specified by tCKS, clock(s) specified as a reference only at a minimum cycle rate.  
3. Timing actually specified by tWR plus tRP clock(s) specified as a reference only at a minimum cycle rate.  
4. tHZ defines the time at which the output achieves the open circuit condition; it is not a reference to Voh or Vol. The last valid data  
element will meet tOH before going high-Z.  
5. Based on tCK = 10ns for –8 and tCK = 7.5ns for –75a  
PDF: 09005aef807827f6 / Source: 09005aef807825bd  
128Mb SDRAM  
Rev: 11/29/2004  
SpecTek reserves the right to change products or  
specifications without notice. Ó 2001, 2002, 2004 SpecTek  
4
www.spectek.com  
128Mb: x4, x8, x16  
SDRAM 3.3V  
54-PIN PLASTIC TSOP (400 mil)  
(Package TK)  
NOTE: 1. All dimensions in millimeters MAX/MIN or typical where noted.  
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.  
PDF: 09005aef807827f6 / Source: 09005aef807825bd  
128Mb SDRAM  
Rev: 11/29/2004  
SpecTek reserves the right to change products or  
specifications without notice. Ó 2001, 2002, 2004 SpecTek  
5
www.spectek.com  
128Mb: x4, x8, x16  
SDRAM 3.3V  
PDF: 09005aef807827f6 / Source: 09005aef807825bd  
128Mb SDRAM  
Rev: 11/29/2004  
SpecTek reserves the right to change products or  
specifications without notice. Ó 2001, 2002, 2004 SpecTek  
6
www.spectek.com  
128Mb: x4, x8, x16  
SDRAM 3.3V  
PDF: 09005aef807827f6 / Source: 09005aef807825bd  
128Mb SDRAM  
Rev: 11/29/2004  
SpecTek reserves the right to change products or  
specifications without notice. Ó 2001, 2002, 2004 SpecTek  
7
www.spectek.com  
128Mb: x4, x8, x16  
SDRAM 3.3V  
FBGA “FB” PACKAGE  
60-pin, 8mm x 16mm  
NOTE: 1. All dimensions in millimeters.  
2. Recommended Pad size for PCB is 0.33mm±0.025mm.  
PDF: 09005aef807827f6 / Source: 09005aef807825bd  
128Mb SDRAM  
Rev: 11/29/2004  
SpecTek reserves the right to change products or  
specifications without notice. Ó 2001, 2002, 2004 SpecTek  
8
www.spectek.com  
128Mb: x4, x8, x16  
SDRAM 3.3V  
PART NUMBERS FOR PRODUCT PRIOR TO DECEMBER 2004  
Options:  
Marking:  
Architecture:  
32 Meg x 4 (8 Meg x 4 x 4 banks)  
16 Meg x 8 (4 Meg x 8 x 4 banks)  
8 Meg x 16 (2 Meg x 16 x 4 banks)  
S40032LK8  
S80016LK7  
S16008LK9  
Voltage and Refresh:  
3.3V, Auto Refresh  
LK  
MK  
3.3V, Self or Auto Refresh1  
Device Configuration:  
32 Meg x 4  
16 Meg x 8  
8
7
9
8 Meg x 16  
Package Types:  
54-pin plastic TSOP (400 mil)  
60-ball FBGA (8mm x 16mm)  
60-ball FBGA (11mm x 13mm)  
TW  
FB2  
FC2  
Timing Types:  
PC100 (3-3-3)  
PC133 (3-3-3)  
-8A  
-75A  
Part number example:  
S80016LK7TW-8A  
NOTES: 1. Only when specified. Consult Sales  
2. Not available in x16 configuration  
http://www.spectek.com/menus/part_guides.asp  
PDF: 09005aef807827f6 / Source: 09005aef807825bd  
128Mb SDRAM  
Rev: 11/29/2004  
SpecTek reserves the right to change products or  
specifications without notice. Ó 2001, 2002, 2004 SpecTek  
9
www.spectek.com  
 

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