SGBU4D [ETC]

Glass Passivated Single Phase Bridge Rectifiers;


型号：	SGBU4D
厂家：	ETC
描述：	Glass Passivated Single Phase Bridge Rectifiers
文件：	总3页 (文件大小：147K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SGBU4D thru SGBU4M

Glass Passivated Single

Phase Bridge Rectifiers

Reverse Voltage 200 to 1000V

Forward Current 4.0 Amp

Features

Glass passivated die construction

Ideal for printed circuit boards

Plastic material used carries UL

flammability recognition 94V-0

High surge current capability

High temperature soldering guaranteed:

265℃/10 seconds, 0.375” (9.5mm) lead

length, 5lbs. (2.3kg) tension

Circuit

Mechanical Data

Case: Molded plastic case

Terminals: Plated leads solderable per

MIL-STD-750, Method 2026

Polarity: Marked on Body

Mounting Position: Any

Module Type

TYPE

VRRM

200V

400V

600V

800V

1000V

VRSM

300V

500V

700V

900V

1100V

SGBU4D

SGBU4G

SGBU4J

SGBU4K

SGBU4M

Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)

Symbol

IF(AV)

Conditions

Values

Units

Maximum average forward output rectified current Tc =100℃

4.0 ⁽¹⁾

Peak forward surge current single half sine-wave superimposed

on rated load (JEDEC Method)

IFSM

i²t

Visol

A²s

Rating for fusing (t<8.3ms)

a.c.50HZ;r.m.s.;1min

2500

RθJA

RθJC

22⁽²⁾

Maximum thermal resistance per leg

℃/W

4.2 ⁽³⁾

-55 to +150

4.0

℃

Tj, TSTG

Weight

Operating Junction and storage temperature range

Approximate Weight

Electrical Characteristics (TA = 25℃unless otherwise noted)

Symbol

Conditions

Values

Units

Maximum Instantaneous Forward Voltage per leg

IFM =2.0A

1.1

Maximum DC reverse current at rated

DC blocking voltage per leg

TA = 25℃

TA = 125℃

5.0

500

µA

Notes: (1) Heat sink, TC mouting-4x4x0.15cm thick copper plate

(2) Junction to ambient without heatsink

(3) Junction to case with heatsink

(4) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for

maximum heat transfer with M3 screw

Document Number: SGBU4D thru SGBU4M

Jun.25, 2010

www.smsemi.com

SGBU4D thru SGBU4M

Performance Curves

1.0

0.1

T_j=25ºC

Pulse Width=300μs

0.01

0.6

0.8

1.0

1.2

100

150

V_F, INSTANTANEOUS FWD VOLTAGE (V)

Fig.2 Typical Forward Characteristics, per element

T_A, AMBIENT TEMPERATURE (ºC)

Fig.1 Forward Current Derating Curve

120

100

1000

Tj=125ºC

8.3ms Single Half-Sine-Wave

100

T_j=25ºC

f =1MHZ

100

0.1

100

NUMBER OF CYCLES AT 60Hz

V_R, REVERSE VOLTAGE (V)

Fig.3 Max Non-Repetitive Forward Surge Current

Fig.4 Typ Junction Capacitance per element

Tj=125ºC

1.0

0.1

Tj=25ºC

0.01

100

120

140

RATED PERCENT OF PEAK REVERSE VOLTAGE (%)

Fig.5 Typical Reverse Characteristics

Document Number:SGBU4D thru SGBU4M

Jun.25, 2010

www.smsemi.com

SGBU4D thru SGBU4M

Package Outline Information

CASE: GBU

0.880(22.3)

0.860(21.8)

0.140(3.56)

0.130(3.30)

0.125(3.2)

×45°

Chamfer

0.310(7.9)

0.290(7.4)

0.160(4.1)

0.140(3.5)

0.740(18.8)

0.720(18.3)

0.085(2.16)

0.065(1.65)

0.075

(1.9)R

0.080(2.03)

0.060(1.52)

0.710(18.0)

0.690(17.5)

0.085(2.16)

0.075(1.90)

0.100(2.54)

0.085(2.16)

0.026(0.67)

0.020(0.52)

0.080(2.03)

0.065(1.65)

0.050(1.27)

0.040(1.02)

0.190(4.83)

0.210(5.33)

Dimensions in inches (mm)

Document Number: SGBU4D thru SGBU4M

Jun.25, 2010

www.smsemi.com

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