SI-3025LUS [ETC]
Surface-Mount, Low Current Consumption, Low Dropout Voltage Dropper Type; 表面贴装，低消耗电流，低压差电压滴管式
| 型号： | SI-3025LUS |
| 厂家： | 
ETC |
| 描述： | Surface-Mount, Low Current Consumption, Low Dropout Voltage Dropper Type |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
●SI-3000LUS Series
SI-3000LUS Series
Surface-Mount, Low Current Consumption, Low Dropout Voltage Dropper Type
■Features
• Compact surface-mount package (SOT-89-3)
• Output current: 250 mA
• Low dropout voltage: VDIF ≤ 0.5 V (at IO = 250 mA)
• 4 types of output voltages (1.8 V, 2.5 V, 3.3 V, 5.0 V) available
• Built-in dropping type overcurrent, thermal protection circuits
■Applications
• Auxiliary power supply for PC
• Battery-driven electronic equipment
■Absolute Maximum Ratings
(Ta=25°C)
Parameter
DC Input Voltage
Symbol
VIN
Ratings
18
Unit
V
DC Output Current
IO
250
mA
W
*1
Power Dissipation
PD
0.75
*2
Junction Temperature
Storage Temperature
Thermal Resistance (Junction to Ambient Air)
Tj
–40 to +135
–40 to +125
146
°C
*2
Top
°C
*1
θj-a
°C/W
*1: When mounted on glass-epoxy board 40 × 40 mm (copper laminate area 2%)
*2: Thermal protection circuits may operate if the junction temperature exceeds 135°C
■Recommended Operating Conditions
Ratings
Parameter
Symbol
Unit
min.
max.
VO+2*1
250
*2
Input Voltage
VIN
IO
V
DC Output Current
0
mA
°C
Ambient Operating Temperature
Top
–20
85
*1: VIN (max) and IO (max) are restricted by the relationship PD = (VIN - VO) × IO.
Calculate these values referring to the reference data.
*2: Refer to the dropout voltage section.
●SI-3000LUS Series
■Electrical Characteristics
(Ta=25°C, VC=2V unless otherwise specified)
Ratings
(Under
(Under
(Under
Parameter
Symbol
SI-3018LUS
SI-3025LUS
SI-3033LUS
SI-3050LUS
development)
Unit
V
development)
development)
min.
typ.
max.
1.836
min.
typ.
max.
min.
typ.
max.
min.
4.900
V
typ. max.
VO
1.764
1.800
2.450
2.500
2.550
3.234
V
3.300
3.366
0.3
5.000
IN=6V, I
5.100
Output Voltage
Conditions
VDIF
V
IN=3.3V, I
O
=10mA
0.3
VIN=3.3V, IO=10mA
IN=5V, I
O=10mA
O
=10mA
0.3
0.3
Conditions
IO=100mA
Dropout Voltage
V
0.5
10
0.5
0.5
0.5
Conditions
∆VLINE
IO=250mA
10
=10mA
40
10
=10mA
40
10
=10mA
40
Line Regulation
Load Regulation
mV
mV
Conditions
∆VLOAD
Conditions
∆VO/∆Ta
Conditions
RREJ
V
IN=3.3 to 5V, I
O
=10mA
V
IN=3.3 to 5V, I
O
VIN=4.5 to 8V, I
O
V
IN=6 to 10V, IO
40
VIN=3.3V, I
O
=0 to 250mA
V
IN=3.3V, I
O
=0 to 250mA
V
IN=5V, I
O
=0 to 250mA
V
IN=6V, IO=0 to 250mA
Temperature Coeffi-
±0.25
±0.25
±0.3
±0.3
mV/°C
dB
cient of Output Voltage
Tj=0 to 100°C
55
IN=3.3V, f=100 to 120H
250
55
55
55
Ripple Rejection
Conditions
Iq
V
Z
V
IN=3.3V, f=100 to 120H
Z
V
IN=5V, f=100 to 120H
250
=0mA
Z
V
IN=6V, f=100 to 120H
250
=0mA
Z
Quiescent Circuit
Current
250
µA
Conditions
IS1
V
IN=3.3V, I
O
=0mA
VIN=3.3V, IO=0mA
V
IN=5V, I
O
VIN=6V, IO
Overcurrent Protection
Starting Current*1
260
260
260
260
mA
Conditions
VIN=3.3V
VIN=3.3V
VIN=5V
VIN=6V
*1: Is1 is specified as the 5% drop point of output voltage VO on the condition that VIN=3.3 V (5 V for SI-3033LUS, 6 V for SI-3050LUS),
and IO=10 mA.
■External Dimensions
(Unit : mm)
4.5
(1.7)
1.6
φ
1
2
3
Pin Arrangement
q VIN
0.54
max.
0.4
0.49max.
0.49max.
w GND
e VOUT
Plastic Mold Package Type
Flammability: UL94V-0
Weight: Approx. 0.05g
1.5
1.5
0.16
●SI-3000LUS Series
■Block Diagram
V
IN
1
3
VO
TSD
+
–
2
GND
REF
■Standard External Circuit
VIN
VO
1
3
CO: Output capacitor (10 µF or larger)
The SI-3000LUS series can be operated on the circuit
even if a low ESR ceramic capacitor is used as the
output capacitor.
CIN
+
+
2
VIN
CO
GND
CIN:Input capacitor (0.1 to 10 µF)
This capacitor is required in the case of an inductive
input line or long wiring.
■Reference Data
Copper Laminate Area vs. Power Dissipation
Tj=100°C PWB size 40 × 40
1
Ta=25°C
0.9
• A monolithic IC is mounted. The inner frame stage is con-
nected to the GND pin (pin 2). Therefore, enlarging the
copper laminate area leading to the GND pin achieves a
heat radiation effect.
Ta=40°C
Ta=60°C
0.8
Ta=85°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
• How to calculate the junction temperature
Measure the temperature (TC) of the GND pin (pin 2) lead
section using a thermistor, etc. Substitute this value in the
following formula and calculate the junction temperature.
Tj=PD×θj–c+Tc (θj–c=5°C/W)
10
100
1000
Copper Laminate Area (mm2)
●SI-3000LUS Series
■Typical Characteristics of SI-3033LUS
(Ta=25°C)
IO vs. VDIF Characteristics
Output Voltage Characteristics
Line Regulation
3.34
5
4
3
2
1
0.6
lO=0mA
3.32
3.30
3.28
3.26
3.24
0.5
0.4
0.3
0.2
0.1
lO=0mA
lO=250mA
lO=250mA
3.220
4
6
8
10
0
50
100
150
200
250
300
0
2
4
6
8
10
Input Voltage VIN (V)
Output Current IO (mA)
Input Voltage VIN (V)
Load Regulation
Overcurrent Protection Characteristics
5
4
3
2
1
0
3.34
3.32
3.30
3.28
3.26
3.24
3.22
V
IN=3.8V
8V
VIN=3.8V
5V
5V
6V
8, 10V
0
50
100
150
200
250
300
0
100
200
300
400
Output Current IO (mA)
Output Current IO (mA)
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