SIT8008BC-11-33E-24.000000E

SiT8008B

Low Power Programmable Oscillator

Features

Applications

◼ Any frequency between 1 MHz and 110 MHz accurate to

6 decimal places

◼ Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,

SSD, GPON, EPON, etc

◼ 100% pin-to-pin drop-in replacement to quartz-based XO

◼ Excellent total frequency stability as low as ±20 ppm

◼ Operating temperature from -40°C to 85°C. For 125°C

and/or -55°C options, refer to SiT1618, SiT8918, SiT8920

◼ Low power consumption of 3.5 mA typical at 1.8 V

◼ Qualify just one device with 1.62 V to 3.63 V continuous

supply voltage option

◼ Ideal for high-speed serial protocols such as: USB,

SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.

◼ Standby mode for longer battery life

◼ Fast startup time of 5 ms

◼ LVCMOS/HCMOS compatible output

◼ Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,

5.0 x 3.2, 7.0 x 5.0 mm x mm

◼ Instant samples with Time Machine II and Field

Programmable Oscillators

◼ RoHS and REACH compliant, Pb-free, Halogen-free and

Antimony-free

◼ For AEC-Q100 oscillators, refer to SiT8924 and SiT8925

Electrical Characteristics

All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise

stated. Typical values are at 25°C and nominal supply voltage.

Table 1. Electrical Characteristics

Parameters

Symbol

Min.

Typ.

Max.

Frequency Range

110 MHz

Frequency Stability and Aging

Unit

Condition

Output Frequency Range

f

1

–

Frequency Stability

F_stab

T_use

-20

-25

-50

–

+20

+25

+50

ppm

Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and

variations over operating temperature, rated power supply voltage

and load.

Operating Temperature Range

Operating Temperature

Range

-20

-40

–

+70

+85

°C

Extended Commercial

Industrial

Supply Voltage and Current Consumption

Supply Voltage Options

Vdd_1.8

Vdd_2.5

Vdd_2.8

Vdd_3.0

Vdd_3.3

Vdd_XX

Vdd_YY

Idd

Contact SiTime for 1.5 V support

1.62

2.25

2.52

2.7

1.8

2.5

2.8

3.0

3.3

1.98

2.75

3.08

3.3

V

2.97

3.63

2.25

1.62

–

3.63

V

Current Consumption

–

3.8

4.5

mA

No load condition, f = 20 MHz, Vdd_2.8, Vdd_3.0, Vdd_3.3,

Vdd_XX, Vdd_YY

–

3.7

3.5

–

4.2

4.1

4.2

mA

No load condition, f = 20 MHz, Vdd_2.5

No load condition, f = 20 MHz, Vdd_1.8

OE Disable Current

Standby Current

I_OD

I_std

Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.

OE = GND, Output in high-Z state

–

4.0

4.3

mA

Vdd_1.8. OE = GND, Output in high-Z state

2.1

A

ST = GND, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.

Output is weakly pulled down

–

1.1

0.2

2.5

1.3

A

ST = GND, Vdd_2.5, Output is weakly pulled down

ST = GND, Vdd_1.8, Output is weakly pulled down

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SiT8008B Low Power Programmable Oscillator

Table 1. Electrical Characteristics (continued)

Parameters

Symbol

Min.

Typ.

Max.

Unit

Condition

LVCMOS Output Characteristics

Duty Cycle

DC

45

–

1

55

2

%

ns

All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6

20% - 80% Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3

20% - 80% Vdd_1.8

Rise/Fall Time

Tr, Tf

–

1.3

–

2.5

2

–

20% - 80% Vdd_XX

–

2.7

ns

20% - 80% Vdd_YY

IOH = -4 mA (Vdd_3.0 and Vdd_3.3)

IOH = -3 mA (Vdd_2.8 and Vdd_ 2.5)

IOH = -2 mA (Vdd _1.8)

Output High Voltage

Output Low Voltage

VOH

VOL

90%

–

Vdd

–

10%

Vdd

IOL = 4 mA (Vdd_3.0 and Vdd_3.3)

IOL = 3 mA (Vdd_2.8 and Vdd_2.5)

IOL = 2 mA (Vdd_1.8)

Input Characteristics

Input High Voltage

Input Low Voltage

VIH

VIL

70%

–

30%

150

–

Vdd

k

Pin 1, OE or ST

Input Pull-up Impedance

Z_in

50

2

87

–

Pin 1, OE logic high or logic low, or ST logic high

Pin 1, ST logic low

M

Startup and Resume Timing

Startup Time

T_start

T_oe

–

5

130

5

ms

ns

Measured from the time Vdd reaches its rated minimum value

f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles

Measured from the time ST pin crosses 50% threshold

Enable/Disable Time

Resume Time

T_resume

ms

Jitter

RMS Period Jitter

T_jitt

–

1.8

3

ps

f = 75 MHz, Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3,

Vdd_XX,

–

3.3

25

ps

f = 75 MHz, Vdd_YY

Peak-to-peak Period Jitter

RMS Phase Jitter (random)

T_pk

12

14

0.5

f = 75 MHz, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY

f = 75 MHz, Vdd_1.8

30

T_phj

0.9

f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd_1.8,

Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX

–

1.3

2

ps

f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd_1.8,

Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX

–

1.4

2.3

ps

f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd_YY

f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd_YY

Table 2. Pin Description

Top View

Symbol

Functionality

H^[1]: specified frequency output

L: output is high impedance. Only output driver is disabled.

H^[1]: specified frequency output

Output Enable

OE/S̅ T̅̅ /NC

1

OE/S̅ T̅̅ /NC

L: output is low (weak pull down). Device goes to sleep mode.

Supply current reduces to I_std.

Standby

Any voltage between 0 and Vdd or Open^[1]: Specified frequency

output. Pin 1 has no function.

No Connect

2

3

4

GND

OUT

VDD

Power

Output

Power

Electrical ground

Oscillator output

Figure 1. Pin Assignments

Power supply voltage^[2]

Notes:

1. In OE or S̅ T̅̅ mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.

2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.

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SiT8008B Low Power Programmable Oscillator

Table 3. Absolute Maximum Limits

Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance

of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.

Parameter

Min.

-65

-0.5

–

Max.

150

4

Unit

°C

V

StorageTemperature

Vdd

2000

260

150

V

ElectrostaticDischarge

–

°C

Soldering Temperature (follow standard Pb free soldering guidelines)

JunctionTemperature^[3]

–

Note:

3. Exceeding this temperature for extended period of time may damage the device.

Table 4. Thermal Consideration^[4]

JA, 4 Layer Board

JA, 2 Layer Board

JC, Bottom

Package

(°C/W)

30

7050

5032

3225

2520

2016

142

97

273

199

212

222

252

24

109

117

152

27

26

36

Note:

4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.

Table 5. Maximum Operating JunctionTemperature^[5]

Max Operating Temperature(ambient)

Maximum Operating JunctionTemperature

70°C

85°C

80°C

95°C

Note:

5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.

Table 6. Environmental Compliance

Parameter

Condition/TestMethod

Mechanical Shock

Mechanical Vibration

TemperatureCycle

Solderability

MIL-STD-883F, Method2002

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method2003

MSL1 @ 260°C

Moisture Sensitivity Level

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SiT8008B Low Power Programmable Oscillator

Test Circuit and Waveform^[6]

Vdd

Vout

Test Point

tr

tf

4

3

80% Vdd

50%

Power

Supply

0.1 uF

15pF

2

(including probe

and fixture

capacitance)

1

20% Vdd

High Pulse

(TH)

Low Pulse

(TL)

Vdd

OE/ST Function

Period

1 kΩ

Figure 2. Waveform

Figure 1. Test Circuit

Note:

6. Duty Cycle is computed as Duty Cycle =TH/Period.

Timing Diagrams

Vdd

90% Vdd

50% Vdd

[7]

T_resume

T_start

No Glitch

Pin 4 Voltage

ST Voltage

during start up

CLK Output

HZ

T_start: Time to start from power-off

T_resume: Time to resume from ST

Figure 3. Startup Timing (OE/ S̅ T̅ ̅ Mode)

Figure 4. Standby Resume Timing ( S

̅

T

̅

ModeOnly)

Vdd

T_oe

Vdd

50% Vdd

OE Voltage

CLK Output

50% Vdd

T_oe

CLK Output

HZ

T_oe: Time to re-enable the clock output

T_oe: Time to put the output in High Z mode

Figure 5. OE Enable Timing (OE Mode Only)

Figure 6. OE Disable Timing (OE Mode Only)

Note:

7. SiT8008 has “no runt” pulses and “no glitch” output during startup or resume.

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SiT8008B Low Power Programmable Oscillator

Performance Plots^[8]

DUT1

DUT6

DUT2

DUT7

DUT3

DUT8

DUT4

DUT9

DUT5

1.8

2.5

2.8

3.0

3.3

DUT10

6.0

5.5

5.0

4.5

4.0

3.5

3.0

20

15

10

5

0

-5

-10

-15

-20

-40

-30

-20

-10

0

10

20

30

40

50

60

70

80

0

10

20

30

40

50

60

70

80

90

100

110

Temperature (°C)

Frequency (MHz)

Figure 7. Idd vs Frequency

Figure 8. Frequency vsTemperature

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

55

54

53

52

51

50

49

48

47

46

45

0

10

20

30

40

50

60

70

80

90

100

110

Frequency (MHz)

Figure 9. RMS Period Jitter vs Frequency

Figure 10. Duty Cycle vs Frequency

Temperature (°C)

Figure 11. 20%-80% Rise Timevs Temperature

Figure 12. 20%-80% Fall Time vsTemperature

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SiT8008B Low Power Programmable Oscillator

Performance Plots^[8]

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

0.9

0.8

0.7

0.6

0.5

0.4

10

30

50

70

90

110

10

30

50

70

90

110

Frequency (MHz)

Figure 14. RMS Integrated Phase Jitter Random

(900 kHz to 20 MHz) vs Frequency^[9]

Figure 13. RMS Integrated Phase JitterRandom

(12 kHz to 20 MHz) vs Frequency^[9]

Notes:

8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.

9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.

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SiT8008B Low Power Programmable Oscillator

The SiT8008 can support up to 60 pF or higher in

maximum capacitive loads with drive strength settings.

Refer to the Rise/Fall Time Tables (Table 7 to 11) to

determine the proper drive strength for the desired

combination of output load vs. rise/fall time.

Programmable Drive Strength

The SiT8008 includes a programmable drive strength

feature to provide a simple, flexible tool to optimize the

clock rise/fall time for specific applications. Benefits from

the programmable drive strength feature are:

SiT8008 Drive Strength Selection

◼

Improves system radiated electromagnetic interference

(EMI) by slowing down the clock rise/fall time.

Improves the downstream clock receiver’s (RX) jitter by

decreasing (speeding up) the clock rise/fall time.

Ability to drive large capacitive loads while maintaining

full swing with sharp edge rates.

Tables 7 through 11 define the rise/fall time for a given

capacitive load and supply voltage.

1. Select the table that matches the SiT8008 nominal

supply voltage (1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V)

2. Select the capacitive load column that matches the

For more detailed information about rise/fall time control and

drive strength selection, see the SiTime Application Notes

section.

application requirement (5 pF to 60 pF)

3. Under the capacitive load column, select the

desired rise/fall times.

EMI Reduction by Slowing Rise/Fall Time

4. The left-most column represents the part number

Figure 15 shows the harmonic power reduction as the

rise/fall times are increased (slowed down). The rise/fall

times are expressed as a ratio of the clock period. For the

ratio of 0.05, the signal is very close to a square wave. For

the ratio of 0.45, the rise/fall times are very close to near-

triangular waveform. These results, for example, show that

the 11th clock harmonic can be reduced by 35 dB if the

rise/fall edge is increased from 5% of the period to 45% of

the period.

code for the corresponding drive strength.

5. Add the drive strength code to the part number for

ordering purposes.

Calculating Maximum Frequency

Any given rise/fall time in Table 7 through 11 dictates the

maximum frequency under which the oscillator can operate

with guaranteed full output swing over the entire operating

temperature range. This max frequency can be calculated as

the following:

trise=0.05

trise=0.1

10

0

trise=0.15

trise=0.2

trise=0.25

trise=0.3

trise=0.35

trise=0.4

trise=0.45

1

-10

-20

-30

-40

-50

-60

-70

-80

Max Frequency =

5 x Trf_20/80

where Trf_20/80 is the typical value for 20%-80% rise/fall time.

Example 1

Calculate f_MAXfor the following condition:

◼

Vdd = 1.8 V (Table 7)

Capacitive Load: 30 pF

1

3

5

7

9

11

Harmonic number

Figure 15. Harmonic EMI reduction as a Function

of Slower Rise/Fall Time

Desired Tr/f time = 3 ns

(rise/fall time part number code = E)

◼

f_MAX= 66.666660

Jitter Reduction with Faster Rise/Fall Time

Part number for the above example:

Power supply noise can be a source of jitter for the

downstream chipset. One way to reduce this jitter is to

speed up the rise/fall time of the input clock. Some chipsets

may also require faster rise/fall time in order to reduce their

sensitivity to this type of jitter. Refer to the Rise/Fall Time

Tables (Table 7 to Table 11) to determine the proper drive

strength.

SiT8008BIE12-18E-66.666660

Drive strength code is inserted here. Default setting is “-”.

High Output Load Capability

The rise/fall time of the input clock varies as a function of

the actual capacitive load the clock drives. At any given

drive strength, the rise/fall time becomes slower as the

output load increases. As an example, for a 3.3 V SiT8008

device with default drive strength setting, the typical rise/fall

time is 1 ns for 15 pF output load. The typical rise/fall time slows

down to 2.6 ns when the output load increases to 45 pF. One

can choose to speed up the rise/fall time to 1.83 ns by then

increasing the drive strength setting on the SiT8008.

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SiT8008B Low Power Programmable Oscillator

Rise/Fall Time (20% to 80%) vs C_LOADTables

Table 7. Vdd = 1.8 V (Vdd_1.8) Rise/Fall Times

for Specific C_LOAD

Table 8. Vdd = 2.5 V (Vdd_2.5) Rise/Fall Times

for Specific C_LOAD

Rise/Fall Time Typ (ns)

Drive Strength \C_LOAD

5 pF

15 pF

30 pF

45 pF

60 pF

Drive Strength \C_LOAD

5 pF

15 pF

30 pF

45 pF

60 pF

L

A

R

B

L

A

R

B

T

E

U

6.16

3.19

2.11

1.65

0.93

0.78

0.70

0.65

11.61

6.35

4.31

3.23

1.91

1.66

1.48

1.30

22.00

11.00

7.65

5.79

3.32

2.94

2.64

2.40

31.27

16.01

10.77

8.18

4.66

4.09

39.91

21.52

14.47

11.08

6.48

4.13

2.11

1.45

1.09

0.62

8.25

4.27

2.81

2.20

1.28

12.82

7.64

5.16

3.88

2.27

21.45

11.20

7.65

5.86

3.51

27.79

14.49

9.88

7.57

4.45

T

5.74

5.09

E or "‐": default

0.54

0.43

0.34

1.00

0.96

0.88

2.01

1.81

1.64

3.10

2.79

2.54

4.01

3.65

3.32

3.68

U

F

F or "‐": default

3.35

4.56

Table 10. Vdd = 3.0 V (Vdd_3.0) Rise/Fall Times

for Specific C_LOAD

Table 9. Vdd = 2.8 V (Vdd_2.8) Rise/Fall Times

for Specific C_LOAD

Rise/Fall Time Typ (ns)

Drive Strength \ C_LOAD

5 pF

3.60

1.84

1.22

0.89

0.51

0.38

0.30

0.27

15 pF

7.21

3.71

2.46

1.92

1.00

0.92

0.83

0.76

30 pF

11.97

6.72

4.54

3.39

1.97

1.72

1.55

1.39

45 pF

18.74

9.86

6.76

5.20

3.07

2.71

2.40

2.16

60 pF

24.30

12.68

8.62

6.64

3.90

3.51

3.13

2.85

Drive Strength \ C_LOAD

5 pF

3.77

1.94

1.29

0.97

0.55

15 pF

7.54

3.90

2.57

2.00

1.12

30 pF

12.28

7.03

4.72

3.54

2.08

45 pF

19.57

10.24

7.01

5.43

3.22

60 pF

25.27

13.34

9.06

6.93

4.08

L

A

R

B

L

A

R

B

T

T or "‐": default

E

U

F

E or "‐": default

0.44

0.34

0.29

1.00

0.88

0.81

1.83

1.64

1.48

2.82

2.52

2.29

3.67

3.30

2.99

U

F

Table 11. Vdd = 3.3 V (Vdd_3.3) Rise/Fall Times

for Specific C_LOAD

Rise/Fall Time Typ (ns)

Drive Strength \ C_LOAD

5 pF

3.39

1.74

1.16

0.81

15 pF

6.88

3.50

2.33

1.82

30 pF

11.63

6.38

4.29

3.22

45 pF

17.56

8.98

6.04

4.52

60 pF

23.59

12.19

8.34

L

A

R

B

6.33

T or “‐”: default

0.46

0.33

0.28

0.25

1.00

0.87

0.79

0.72

1.86

1.64

1.46

1.31

2.60

2.30

2.05

1.83

3.84

3.35

2.93

2.61

E

U

F

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SiT8008B Low Power Programmable Oscillator

Pin 1 Configuration Options

(OE, S̅ T̅ ̅ , or NC)

Pin 1 of the SiT8008 can be factory-programmed to support

three modes: Output Enable (OE), standby (S ) or

̅ T̅ ̅

No Connect (NC). These modes can also be programmed

with the Time Machine using field programmable devices.

Output Enable (OE) Mode

In the OE mode, applying logic Low to the OE pin only

disables the output driver and puts it in Hi-Z mode. The core

of the device continues to operate normally. Power

consumption is reduced due to the inactivity of the output.

When the OE pin is pulled High, the output is typically

enabled in <1 µs.

Figure 16. Startup Waveform vs. Vdd

Standby (S̅ T̅ ̅ ) Mode

In the S mode, a device enters into the standby mode when

̅ T̅ ̅

Pin 1 pulled Low. All internal circuits of the device are turned

off. The current is reduced to a standby current, typically in

the range of a few µA. When S̅ T̅ ̅ is pulled High, the device

goes through the “resume” process, which can take up

to 5 ms.

No Connect (NC) Mode

In the NC mode, the device always operates in its normal

mode and outputs the specified frequency regardless of the

logic level on pin 1.

Figure 17. Startup Waveform vs. Vdd

(Zoomed-in View of Figure 16)

Instant Samples with Time Machine and

Field Programmable Oscillators

Table 12 below summarizes the key relevant parameters in

the operation of the device in OE, S

̅

T

̅

, or NCmode.

SiTime supports a field programmable version of the

SiT8008 Low Power Oscillator for fast prototyping and real

time customization of features. The field programmable

devices (FP devices) are available for all five standard

SiT8008 package sizes and can be configured to one’s

exact specification using the Time Machine II, an USB

powered MEMS oscillator programmer.

Table 12. OE vs. S vs. NC

̅ T̅ ̅

OE

ST

NC

Active current 20 MHz

(max, 1.8 V)

4.1 mA

4 mA

N/A

4.1 mA

OE disable current

(max. 1.8 V)

N/A

0.6 µA

N/A

Standby current

(typical 1.8 V)

OE enable time at 77.76 MHz

(max)

138 ns

Customizable Features of the SiT8008 FP Devices Include

Resume time from standby

(max, all frequency)

N/A

5 ms

N/A

◼

Frequency between 1 MHz to 110 MHz

Three frequency stability options, ±20 ppm,

±25 ppm, ±50 ppm

Output driver in OE

disable/standby mode

High Z

weak

pull-down

◼

Two operating temperatures, -20 to 70°C or

-40 to 85°C

Output on Startup and Resume

The SiT8008 comes with gated output. Its clock output is

accurate to the rated frequency stability within the first pulse

from initial device startup or resume from the standby mode.

Seven supply voltage options, 1.8 V, 2.5 V, 2.8 V,

3.0 V, 3.3 V, 2.25 to 3.63 V and 1.62 to 3.63 V

continuous

In addition, the SiT8008 features “no runt” pulses and “no

glitch” output during startup or resume as shown in the wave-

form captures in Figure 17 and Figure 18.

◼

Output drive strength

OE, ST or NC mode

For more information regarding

SiTime’s field

programmable solutions, see Time Machine II and Field

Programmable Oscillators.

SiT8008 is typically factory-programmed per customer

ordering codes for volume delivery.

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SiT8008B Low Power Programmable Oscillator

Dimensions and Patterns

Package Size – Dimensions (Unit: mm)^[10]

2.0 x 1.6 x 0.75 mm

Recommended Land Pattern (Unit: mm)^[11]

1.5

0.9

2.5 x 2.0 x 0.75 mm

1.9

1.1

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SiT8008B Low Power Programmable Oscillator

Dimensions and Patterns (continued)

Package Size – Dimensions (Unit: mm)^[10]

3.2 x 2.5 x 0.75 mm

Recommended Land Pattern (Unit: mm)^[11]

2.2

1.4

5.0 x 3.2 x 0.75 mm

2.54

1.5

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SiT8008B Low Power Programmable Oscillator

Dimensions and Patterns (continued)

Package Size – Dimensions (Unit: mm)^[10]

7.0 x 5.0 x 0.90 mm

Recommended Land Pattern (Unit: mm)^[11]

5.08

2.2

Notes:

10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of

the device.

11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.

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SiT8008B Low Power Programmable Oscillator

Ordering Information

The Part No. Guide is for reference only.

To customize and build an exact part number, use the SiTime Part Number Generator.

SiT8008BC-12-18E-66.666660D

Packing Method

D”: 8 mm Tape & Reel, 3 kureel

“E”: 8 mm Tape & Reel, 1 ku reel

“T”: 12/16 mm Tape & Reel, 3 ku reel

“Y”: 12/16 mm Tape & Reel, 1 ku reel

Blank for Bulk

Revision Letter

Temperature Range

C” Commercial, -20°C to 70°C

“I” Industrial, -40°C to 85°C

See Tables 7 to 11 for

rise/fall times

Supply Voltage

Package Size

Frequency Stability

Table 13. Ordering Codes for Supported Tape & Reel Packing Method

Device Size

16 mm T&R (3 ku)

16 mm T&R (1 ku)

12 mm T&R (3 ku)

12 mm T&R (1 ku)

8 mm T&R (3 ku)

8 mm T&R (1 ku)

(mm x mm)

2.0 x 1.6

2.5 x 2.0

3.2 x 2.5

5.0 x 3.2

7.0 x 5.0

–

T

–

Y

–

T

–

Y

–

D

–

E

–

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SiT8008B Low Power Programmable Oscillator

Table 14. Additional Information

Document

Description

Download Link

Time Machine II

MEMS oscillator programmer

http://www.sitime.com/support/time-machine-oscillator-programmer

Field Programmable

Oscillators

Devices that can be programmable in the http://www.sitime.com/products/field-programmable-oscillators

field by Time Machine II

Manufacturing Notes

Qualification Reports

Performance Reports

Tape & Reel dimension, reflow profile and https://www.sitime.com/sites/default/files/gated/Manufacturing-Notes-for-SiTime-

other manufacturing related info

Products.pdf

RoHS report, reliability reports,

composition reports

http://www.sitime.com/support/quality-and-reliability

Additional performance data such as

phase noise, current consumption and

jitter for selected frequencies

http://www.sitime.com/support/performance-measurement-report

Termination Techniques

Layout Techniques

Termination design

recommendations

http://www.sitime.com/support/application-notes

Layout recommendations

Table 15. Revision History

Revision

Release Date

Change Summary

1.0

10-Jun-2014

First Production Release

1.01

7-May-2015

Revised the Electrical Characteristics, Timing Diagrams and Performance Plots

Revised 2016 package diagram

1.02

18-Jun-2015

Added 16 mm T&R information to Table 13

Revised 12 mm T&R information to Table 13

1.03

1.04

30-Aug-2016

9-Jan-2018

Revised part number example in the ordering information

Updated logo and company address, other page layout changes

Revised 2520 package land pattern

1.05

1.06

8-Jul-2020

Updated ordering information with “YY” supply voltage option

Updated ordering information with note

Removed note 12

27-Jan-2021

Added Rise/Fall Time, RMS Period Jitter, and RMS Phase Jitter specifications for “YY” voltage option

Various formatting updates

1.07

3-Nov-2021

Updated Dimensions and Patterns drawings

Fixed Condition of Output Low Voltage in Table 1

SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439

defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or

accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv)

improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.

Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by

operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or

usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by

SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved

or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.

CRITICAL USE EXCLUSION POLICY

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR

FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products

does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to

the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be

strictly prohibited.

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Silicon MEMS Outperforms Quartz

Supplemental Information

The Supplemental Information section is not part of the datasheet and is for informational purposes only.

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Silicon MEMS Outperforms Quartz

Best Reliability

Best Electro Magnetic Susceptibility (EMS)

Silicon is inherently more reliable than quartz. Unlike quartz

suppliers, SiTime has in-house MEMS and analog CMOS

expertise, which allows SiTime to develop the most

reliable products. Figure 1 shows a comparison with

quartz technology.

SiTime’s oscillators in plastic packages are up to 54 times

more immune to external electromagnetic fields than

quartz oscillators as shown in Figure 3.

Why is SiTime Best in Class:

◼ Internal differential architecture for best common

Why is SiTime Best in Class:

mode noise rejection

◼ SiTime’s MEMS resonators are vacuum sealed using an

advanced EpiSeal™ process, which eliminates foreign

particles and improves long term aging and reliability

◼ Electrostatically driven MEMS resonator is more

immune to EMS

◼ World-class MEMS and CMOS design expertise

Reliability (Million Hours)

SiTime

1,140

38

IDT

KYCA

EPSN

TXC

CW

SLAB

SiTime

28

EPSN

Figure 3. Electro Magnetic Susceptibility (EMS)^[3]

Best Power Supply Noise Rejection

Figure 1. Reliability Comparison^[1]

SiTime’s MEMS oscillators are more resilient against noise

on the power supply. A comparison is shown in Figure 4.

Best Aging

Unlike quartz, MEMS oscillators have excellent long term

aging performance which is why every new SiTime product

specifies 10-year aging. A comparison is shown in Figure 2.

Why is SiTime Best in Class:

◼ On-chip regulators and internal differential architecture

for common mode noise rejection

Why is SiTime Best in Class:

◼ MEMS resonator is paired with advanced analog

◼ SiTime’s MEMS resonators are vacuum sealed using an

advanced EpiSeal™ process, which eliminates foreign

particles and improves long term aging and reliability

CMOS IC

SiTime

EPSN

KYCA

◼ Inherently better immunity of electrostatically driven

MEMS resonator

MEMS vs. Quartz Aging

EpiSeal MEMS Oscillator

SiTime Oscillator

Quartz Oscillator

10

8

6

4

3.5

3

2

1.5

Figure 4. Power Supply Noise Rejection^[4]

0

1-Year

10-Year

Figure 2. Aging Comparison^[2]

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Silicon MEMS Outperforms Quartz

Best Vibration Robustness

Best Shock Robustness

High-vibration environments are all around us. All electronics,

from handheld devices to enterprise servers and storage

systems are subject to vibration. Figure 5 shows a com-

parison of vibration robustness.

SiTime’s oscillators can withstand at least 50,000 g shock.

They all maintain their electrical performance in operation

during shock events. A comparison with quartz devices is

shown in Figure 6.

Why is SiTime Best in Class:

◼ The moving mass of SiTime’s MEMS resonators is up

to 3000 times smaller than quartz

◼ Center-anchored MEMS resonator is the most robust

design

KYCA

T

TX

X

C

E

P

PS

S

C

CW

S

L

A

AB

B

SiTiSimeae

Ep l MEMS

100.0

10.0

1.0

0.1

0.0

10

100

1000

KYCA

EPSN

TXC

CW

SLAB

SiTime

Vibration Frequency (Hz)

Figure 6. Shock Robustness^[6]

Figure 5. Vibration Robustness^[5]

Figure labels:

▪

TXC = TXC

Epson = EPSN

Connor Winfield = CW

Kyocera = KYCA

SiLabs = SLAB

SiTime = EpiSeal MEMS

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Silicon MEMS Outperforms Quartz

Notes:

1. Data source: Reliability documents of named companies.

2. Data source: SiTime and quartz oscillator devices datasheets.

3. Test conditions for Electro Magnetic Susceptibility (EMS):

▪

According to IEC EN61000-4.3 (Electromagnetic compatibility standard)

Field strength: 3V/m

Radiated signal modulation: AM 1 kHz at 80% depth

Carrier frequency scan: 80 MHz – 1 GHz in 1% steps

Antenna polarization: Vertical

DUT position: Center aligned to antenna

Devices used in this test:

Label

Manufacturer

SiTime

Part Number

Technology

EpiSeal MEMS

EPSN

TXC

SiT9120AC-1D2-33E156.250000

EG-2102CA156.2500M-PHPAL3

BB-156.250MBE-T

MEMS + PLL

Epson

Quartz, SAW

TXC

Quartz, 3^rdOvertone

Quartz, SAW

CW

Conner Winfield

AVX Kyocera

SiLab

P123-156.25M

KYCA

KC7050T156.250P30E00

590AB-BDG

SLAB

Quartz, 3^rdOvertone + PLL

4. 50 mV pk-pk Sinusoidal voltage.

Devices used in this test:

Label

Manufacturer

SiTime

Part Number

Technology

MEMS + PLL

Quartz

EpiSeal MEMS

SiT8208AI-33-33E-25.000000

NZ2523SB-25.6M

NDK

KYCA

AVX Kyocera

Epson

KC2016B25M0C1GE00

SG-310SCF-25M0-MB3

Quartz

EPSN

Quartz

5. Devices used in this test:

same as EMS test stated in Note 3.

6. Test conditions for shock test:

▪

MIL-STD-883F Method 2002

Condition A: half sine wave shock pulse, 500-g, 1ms

Continuous frequency measurement in 100 μs gate time for 10 seconds

Devices used in this test:

same as EMS test stated in Note 3.

7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com.

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型号：	SIT8008BC-11-33E-24.000000E
厂家：	ETC
描述：	OSC MEMS 24.0000MHZ LVCMOS SMD
文件：	总18页 (文件大小：1305K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SIT8008BC-11-33E-24.000000E [ETC]

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