SSU2N90A [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1.7A I(D) | TO-251AA ; 晶体管| MOSFET | N沟道| 900V V（ BR ） DSS | 1.7AI （D ） | TO- 251AA\n
| 型号： | SSU2N90A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1.7A I(D) | TO-251AA
|
| 文件： | 总7页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSU2N90A
Advanced Power MOSFET
FEATURES
BVDSS = 900 V
RDS(on) = 7.0 W
ID = 1.7 A
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 900V
Low RDS(ON) : 5.838 W (Typ.)
I-PAK
1
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 OC)
Continuous Drain Current (TC=100 OC)
Drain Current-Pulsed
Value
900
1.7
Units
VDSS
V
ID
A
1.1
1
IDM
VGS
EAS
IAR
A
V
O
6.8
+
_
Gate-to-Source Voltage
30
2
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
214
1.7
4.5
1.5
45
O
1
O
EAR
dv/dt
1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 OC)
Linear Derating Factor
mJ
V/ns
W
O
3
O
PD
TJ , TSTG
TL
W/ OC
0.36
Operating Junction and
- 55 to +150
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
OC
Purposes, 1/8“ from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
Rq
JC
--
--
2.78
110
OC /W
R qJA
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
SSU2N90A
O
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
VGS=0V,ID=250mA
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
900 --
--
O
DBV/DTJ
VGS(th)
ID=250mA
See Fig 7
V/ C
-- 1.07 --
V
DS=5V,ID=250mA
VGS=30V
GS=-30V
VDS=900V
V
2.0
--
--
--
3.5
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
100
IGSS
nA
V
--
-- -100
--
--
--
25
IDSS
Drain-to-Source Leakage Current
mA
O
V
DS=720V,TC=125 C
--
250
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
RDS(on)
VGS=10V,ID=0.85A
VDS=50V,ID=0.85A
*
--
--
W
7.0
4
O
4
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
1.44 --
435 565
O
W
VGS=0V,VDS=25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
55
23
40
55
85
45
32
--
45
18
pF
See Fig 5
15
VDD=450V,ID=2A,
22
RG=16W
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
38
4
See Fig 13
5
O O
18
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
24
V
DS=720V,VGS=10V,
Qgs
Qgd
nC
4.2
11.4
ID=2A
4
5
--
See Fig 6 & Fig 12
O O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
IS
ISM
VSD
trr
--
--
--
--
--
--
1.7
6.8
1.4
--
A
1
O
O
4
O
V
--
TJ=25 C ,IS=1.7A,VGS=0V
O
ns
mC
320
TJ=25 C ,IF=2A
Qrr
-- 1.11 --
4
O
diF/dt=100A/ms
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
2
O
O
O L=140mH, I
AS=1.7A, VDD=50V, RG=27W, Starting TJ =25 C
O
_
_
_
<
ISD 2A, di/dt 80A/¥ì s, V
BVDSS , Starting TJ =25 C
3
<
<
DD
O
_
Pulse Test : Pulse Width = 250 ms, Duty Cycle 2%
<
4
O
Essentially Independent of Operating Temperature
5
O
N-CHANNEL
POWER MOSFET
SSU2N90A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
0
0
10
10
Bottom : 4.5 V
150 o
C
-1
-1
10
10
@ Notes :
25 o
C
1. V = 0 V
GS
2. V = 50 V
DS
@ Notes :
1. 250 s Pulse Test
m
3. 250 s Pulse Test
- 55 o
C
m
2. T = 25o
C
C
-2
-2
10
10
-1
0
1
2
4
6
8
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
25
20
15
10
5
0
VGS = 10 V
10
-1
10
VGS = 20 V
@ Notes :
1. VGS = 0 V
150 oC
2. 250 s Pulse Test
m
@ Note : TJ = 25 o
C
25 o
C
-2
0
10
0
2
4
6
8
0.2
0.4
0.6
0.8
1.0
1.2
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
800
600
400
200
Ciss= Cgs+ Cgd (Cds= shorted)
VDS = 180 V
C
oss= Cds+ C
gd
10
C
rss= C
gd
V
= 450 V
DS
C iss
VDS = 720 V
5
0
@ Notes :
C oss
C rss
1. VGS = 0 V
2. f = 1 MHz
@ Notes : I = 2.0 A
D
0 0
10
1
0
5
10
15
20
25
10
Q , Total Gate Charge [nC]
VDS , Drain-Source Voltage [V]
G
N-CHANNEL
POWER MOSFET
SSU2N90A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
@ Notes :
1. VGS = 10 V
0.9
0.8
@ Notes :
1. VGS = 0 V
2. I = 1.0 A
2. I = 250
A
m
D
D
-75
-50
-25
0
25
50
75
100
125
150
175
-75
-50
-25
0
25
50
75
100
125
150
175
T , Junction Temperature [ oC]
T , Junction Temperature [ oC]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
2.0
Operation in This Area
is Limited by RDS(on)
1
10
1.5
1.0
0.5
0.0
10
s
m
100
s
m
1 ms
0
10
10 ms
DC
-1
@ Notes :
1. T = 25o
10
C
C
2. T = 150o
C
J
3. Single Pulse
-2
10
1
2
3
25
50
75
100
125
150
10
10
10
T , Case Temperature [oC]
V
DS , Drain-Source Voltage [V]
c
Fig 11. Thermal Response
D=0.5
0.2
100
10-1
10-2
@
Notes :
0.1
1. ZqJC(t)=2.78 oC/W Max.
2. Duty Factor, D=t/t2
1
3. TJM-TC=PDM*Zq JC(t)
0.05
0.02
0.01
PDM
single pulse
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
SSU2N90A
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator *
VGS
Same Type
as DUT
50K¥Ø
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
10V
t p
t p
Time
N-CHANNEL
POWER MOSFET
SSU2N90A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by “R •
G
• IS controlled by Duty Factor“D”
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Obsolete
Full Production
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any time without notice in order to improve design.
Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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