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元器件品牌
SSW-407
[ETC]
SPDT RF Absorptive Switch ; 单刀双掷RF吸收式开关\n
元器件型号：
SSW-407
生产厂家：
ETC
描述和应用：
SPDT RF Absorptive Switch
单刀双掷RF吸收式开关\n
开关 射频 微波 光电二极管
PDF文件：
总2页 (文件大小：106K)
下载文档：
下载PDF数据表文档文件
型号参数：SSW-407参数
查看货源
SSW408
DC-4 GHz High Power GaAs MMIC SPDT Switch
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156
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25
STANFORD
SSW408
DC-4 GHz High Power GaAs MMIC SPDT Switch
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
28
STANFORD
SSW-408
DC-4 GHz High Power GaAs MMIC SPDT Switch
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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8
STANFORD
SSW-408
DC-4 GHz High Power GaAs MMIC SPDT Switch
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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21
STANFORD
SSW-424
SPDT RF Absorptive Switch
Warning
: Undefined variable $rtag in
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156
-
24
ETC
SSW4N60A
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4A I(D) | TO-263AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
106
ETC
SSW4N60A
Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SAMSUNG
SSW4N60B
600V N-Channel MOSFET
Warning
: Undefined variable $rtag in
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156
-
69
FAIRCHILD
SSW4N60BTM
暂无描述
Warning
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on line
156
-
0
FAIRCHILD
SSW4N80A
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-263AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
47
ETC
SSW4N80AS
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.5A I(D) | TO-263AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
24
ETC
SSW4N80ASTM
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
FAIRCHILD
SSW4N90A
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-263AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
31
ETC
SSW4N90A
Power Field-Effect Transistor, 4A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SAMSUNG
SSW4N90AS
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4.5A I(D) | TO-263AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
13
ETC
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