ST330C08L0 [ETC]
800V 650A Phase Control SCR in a TO-200AC (B-Puk) package ; 800V 650A相位控制可控硅的TO- 200AC （ B- PUK）封装
| 型号： | ST330C08L0 |
| 厂家： | 
ETC |
| 描述： | 800V 650A Phase Control SCR in a TO-200AC (B-Puk) package
|
| 文件： | 总7页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25154 rev. C 04/00
ST330C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
650A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
High profile hockey-puk
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST330C..L
650
Units
A
@ T
55
°C
hs
IT(RMS)
1230
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
9000
9420
405
A
A
I2t
KA2s
KA2s
370
VDRM/VRRM
400 to 1600
100
V
t
typical
µs
q
TJ
- 40 to 125
°C
1
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ST330C..L Series
Bulletin I25154 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number
peak and off-state voltage
repetitive peak voltage
V
V
04
08
12
14
16
400
500
800
900
ST330C..L
1200
1400
1600
1300
1500
1700
50
On-state Conduction
Parameter
ST330C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
650 (314)
55 (75)
1230
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
9000
9420
7570
7920
405
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
370
KA2s
287
262
I2√t
Maximum I2√t for fusing
4050
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
0.91
0.93
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO)2 High level value of threshold
voltage
(I > π x IT(AV)),TJ = TJ max.
rt1
Low level value of on-state
slope resistance
0.57
0.57
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.90
600
V
I = 1730A, TJ = TJ max, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST330C..L
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
t
Typical turn-off time
100
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST330C..L Series
Bulletin I25154 rev. C 04/00
Blocking
Parameter
ST330C..L
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
50
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST330C..L
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
200
100
50
-
200
-
T
J = - 40°C
IGT
DC gate current required
to trigger
mA TJ 25°C
=
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
TJ = 125°C
TJ = - 40°C
2.5
1.8
1.1
-
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ
= 25°C
T
J = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST330C..L
-40 to 125
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
°C
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.11
0.06
DC operation single side cooled
DC operation double side cooled
K/W
K/W
RthC-hs Max. thermal resistance,
case to heatsink
0.011
0.005
9800
(1000)
250
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
3
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ST330C..L Series
Bulletin I25154 rev. C 04/00
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
K/W
60°
30°
Ordering Information Table
Device Code
ST 33
0
C
16
L
1
1
2
5
7
8
3
4
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
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ST330C..L Series
Bulletin I25154 rev. C 04/00
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
36.5 (1.44)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
130
1 3 0
1 2 0
1 1 0
1 0 0
9 0
ST330C..L Series
(Single Side Cooled)
ST 33 0C ..L Se rie s
(Sin g le S id e C o ole d )
120
110
100
90
R
(D C ) = 0.11 K /W
R
(D C) = 0.11 K/W
thJ- hs
thJ-h s
C ondu ction Angle
C ondu ction Period
8 0
80
7 0
70
30°
6 0
60°
60
90°
5 0
30°
120°
60°
50
180°
4 0
90 °
12 0°
40
3 0
1 80°
D C
60 0
30
2 0
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
0
2 00
4 00
80 0
A ve ra g e O n -sta te C u rren t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST330C..L Series
Bulletin I25154 rev. C 04/00
1 3 0
1 3 0
1 2 0
1 1 0
1 0 0
9 0
ST 3 30C ..L Se rie s
(D o ub le Sid e C oo le d )
ST 3 30C ..L Se rie s
(D o ub le Sid e C o oled )
1 2 0
1 1 0
1 0 0
9 0
R
(D C ) = 0.05 K/W
R
(D C ) = 0.05 K /W
thJ-hs
th J-hs
C on duction Angle
Con duction Period
8 0
8 0
7 0
7 0
30°
6 0
6 0
60°
30 °
60°
5 0
5 0
90°
90 °
120°
180 °
1 20°
4 0
4 0
180 °
3 0
3 0
D C
2 0
2 0
0
2 00
4 00
6 0 0
80 0
0
2 00
40 0
6 00
8 00 1 00 0 1 2 00 1 40 0
Av era g e O n - sta te C u rre n t (A )
A vera g e O n - sta te C u rren t (A)
Fig. 4 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
1600
1400
1200
1000
800
600
400
200
0
2200
2000
1800
1600
1400
1200
1000
800
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
C ondu ction Period
ST330C..L Series
Con duction Angle
ST330C..L Series
600
400
T
= 125°C
J
T
= 125°C
J
200
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
8 00 0
7 50 0
7 00 0
6 50 0
6 00 0
5 50 0
5 00 0
4 50 0
4 00 0
3 50 0
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
A t A n y R a ted Lo a d C o n d ition A n d W ith
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
R a te d
V
A p p lie d F o llow in g Su rg e .
RRM
In itia l T
= 125° C
J
@
@
60 H z 0 .00 83
50 H z 0 .01 00
s
s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
S T 330C ..L S er ies
ST330C..L Series
1
10
1 0 0
0.01
0.1
Pulse Train Duration (s)
1
Numb er Of Equa l Amp litude H alf C ycle C urren t Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST330C..L Series
Bulletin I25154 rev. C 04/00
1 0 0 00
1 0 00
10 0
T
= 25° C
J
T
= 12 5°C
J
ST 3 30C ..L Se ries
0 .5
1
1.5
2 2. 5 3 3. 5 4 4 .5 5 5. 5 6 6 .5 7
In sta n ta n e ou s O n - sta te V o lta g e (V )
Fig. 9 - On-state Voltage Drop Characteristics
1
Stea d y Sta te V a lu e
0.11 K /W
(Sin gle Sid e C o oled )
0.05 K /W
R
=
thJ-hs
R
=
0.1
thJ-hs
(D ou ble S id e C o oled )
(D C O p e ration )
0 .01
0.0 01
ST 330C ..L Ser ies
0 .00 1
0.0 1
0 .1
Sq u a re W a ve P ulse D ur atio n (s)
1
1 0
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1 0 0
R ec ta n g ula r g a te p ulse
a ) Re co m m e n d e d lo a d lin e fo r
ra ted d i/d t : 20V , 1 0oh m s; tr< =1 µ s
b ) Re co m m e n d e d loa d lin e f or
< = 30% ra ted d i/d t : 10 V , 10 oh m s
tr< = 1 µs
(1) P G M
(2) P G M
(3) P G M
(4) P G M
=
=
=
=
10W , tp
20W , tp
40W , tp
60W , tp
=
=
=
=
4m s
2m s
1m s
0.66m s
10
(a )
(b )
1
(2)
(1)
(3) (4)
V G D
IG D
Fre q u en c y Lim ite d b y P G (AV )
10 1 00
D e vice : ST 3 30C ..L S eries
0 .1
0. 1
0.0 01
0 .0 1
1
In sta n ta n e ou s G a te C u rren t (A)
Fig. 11 - Gate Characteristics
7
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