STD2NC70ZT4 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 2.3A I(D) | TO-252AA ; 晶体管| MOSFET | N沟道| 700V V（ BR ） DSS | 2.3AI （D ） | TO- 252AA\n
| 型号： | STD2NC70ZT4 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 2.3A I(D) | TO-252AA
|
| 文件： | 总10页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD2NC70Z
STD2NC70Z-1
- 2.3A DPAK/IPAK
N-CHANNEL 700V - 4.1
Ω
Zener-Protected PowerMESH III MOSFET
TYPE
V
R
DS(on)
I
D
DSS
STD2NC70Z
STD2NC70Z-1
700V
700V
< 4.7Ω
< 4.7Ω
2.3 A
2.3 A
■
■
TYPICAL R (on) = 4.1Ω
DS
3
3
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
1
2
1
■
■
■
DPAK
IPAK
(Add Suffix “T4” for Tape & Reel)
DESCRIPTION
The third generation of MESH OVERLAY Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by
applications.
a large variety of single-switch
APPLICATIONS
■
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Drain-source Voltage (V = 0)
Value
Unit
V
V
700
700
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
V
DGR
GS
V
Gate- source Voltage
± 25
2.3
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
1.45
9.2
A
D
C
I
( )
●
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
55
W
TOT
C
Derating Factor
0.44
±50
W/°C
mA
KV
I
Gate-source Current (DC)
GS
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Storage Temperature
1.5
ESD(G-S)
dv/dt (1)
3
V/ns
°C
T
stg
–65 to 150
150
T
Max. Operating Junction Temperature
°C
j
(•)Pulse width limited by safe operating area
(1)I ≤2.3A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
j JMAX
SD
DD
(BR)DSS
April 2001
1/10
STD2NC70Z/STD2NC70Z-1
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
2.27
62.5
0.1
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
T
l
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
2.3
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
165
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
= 250 µA, V = 0
Min.
Typ.
Max.
Unit
V
I
I
700
V
(BR)DSS
D
D
GS
∆BV
/∆T Breakdown Voltage Temp.
= 1 mA, V = 0
0.8
V/°C
DSS
J
GS
Coefficient
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
µA
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ±20V
±10
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
GS(th)
DS(on)
Gate Threshold Voltage
V
V
= V , I = 250µA
3
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 1.25 A
4.1
4.7
Ω
D
I
On State Drain Current
V
V
> I
= 10V
x R
DS(on)max,
2.3
A
D(on)
DS
GS
D(on)
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
> I
2
S
DS
D(on)
I
= 1.25A
D
C
C
V
= 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
530
50
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
rss
7
pF
2/10
STD2NC70Z/STD2NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 350 V, I = 1.25 A
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
V
14
ns
d(on)
DD
D
R
= 4.7Ω V
= 10V
GS
G
t
Rise Time
11
ns
r
(see test circuit, Figure 3)
Q
V
V
= 560V, I = 2.5A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
17
4
24
nC
nC
nC
g
DD
GS
D
Q
Q
gs
gd
7
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
16
Max.
Unit
ns
t
V
R
= 560V, I = 2.5 A,
r(Voff)
DD
D
= 4.7Ω, V = 10V
G
GS
t
33
ns
f
(see test circuit, Figure 5)
t
Cross-over Time
40
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
2.3
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
9.2
A
SDM
V
I
I
= 2.3 A, V = 0
1.6
V
SD
SD
SD
GS
t
= 2.5 A, di/dt = 100A/µs,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
175
0.6
7.5
ns
µC
A
rr
V
= 27V, T = 150°C
j
DD
Q
rr
RRM
(see test circuit, Figure 5)
I
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
25
V
GSO
-4
αT
Rz
Voltage Thermal Coefficient
Dynamic Resistance
T=25°C Note(3)
1.3
90
10 /°C
I
= 50 mA, V = 0
GS
Ω
D
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V = α T (25°-T) BV
(25°)
GSO
BV
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/10
STD2NC70Z/STD2NC70Z-1
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/10
STD2NC70Z/STD2NC70Z-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
STD2NC70Z/STD2NC70Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STD2NC70Z/STD2NC70Z-1
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
7/10
STD2NC70Z/STD2NC70Z-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
TYP.
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/10
STD2NC70Z/STD2NC70Z-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8 13.2 0.504 0.520
20.2 0.795
16.4 18.4 0.645 0.724
50 1.968
0.059
22.4
0.881
BASE QTY
BULK QTY
TAPE MECHANICAL DATA
2500
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
9/10
STD2NC70Z/STD2NC70Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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10/10
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