STYN910S [ETC]
Discrete Thyristors(SCRs); 分立晶闸管（SCR ）
| 型号： | STYN910S |
| 厂家： | 
ETC |
| 描述： | Discrete Thyristors(SCRs) |
| 文件： | 总2页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
Dimensions TO-220AB
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
G
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
K
A
K
0.100
BSC
G
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-263(D2PAK)
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
A
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
G
D
D1
8.64
8.00
9.65
8.89
.340
.315
.380
.350
K
E
E1
e
9.65
6.22
2.54 BSC
10.29
8.13
.380 .405
.245 .320
.100 BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
.575
.090
.040
.050
0
.625
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
L1
L2
L3
L4
.110
.055
.070
.008
R
0.46
0.74
.018
.029
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
A
I
RMS on-state current (180° conduction angle)
C
T(RMS)
Tc = 100°
10
IT
6.4
Average on-state current (180° conduction angle)
Tc = 100°C
A
(AV)
I
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
105
100
50
TSM
A
²
²
2
tp = 10 ms
A
S
I t
I t Value
Critical rate of rise of on-state current
dI/dt
50
A/µs
Gate supply:I
G
= 100mA dI /dt = 1A/µs
G
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
°C
Tj
260
Maximum lead soldering temperature during 10s at 4.5mm from case
TYN
Tl
210
200
410
400
610
600
810
800
1010
1000
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
V
STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■
STANDARD
Symbol
Test Conditions
TYNx08(S)
Unit
mA
V
I
MAX.
15
1.5
0.2
Tj = 25°C
GT
V = 12 V
R = 33 W
D
L
Tj = 25°C
MAX.
MIN.
V
V
GT
Tj = 110°C
V = V
R = 3.3 kW
V
GD
tgt
D
DRM
L
µs
TYP
2
V = V
A/µs Tj = 25°C
G =40mA dIG/dt = 0.5
I
D
DRM
I = 100 mA Gate open
MAX.
mA
mA
I
30
T
H
Tj = 25°C
Tj = 25°C
I
I = 1.2 I
50
200
1.6
G
GT
L
TYP
MIN.
MAX.
V = 67 % V
Gate open
= 20 A tp = 380 µs
TM
Tj = 110°C
µs
V/µs
V
dV/dt
D
DRM
V
I
Tj = 25°C
TM
V = 67 % V
ITM=20A V
R
=25V
D
DRM
µs
70
TYP
Tj = 110°C
tq
/µs
A/µs dVD/dt=50V
dITM/dt=30
I
Tj = 25°C
0.01
2
rated
mA
mA
V
DRM
DRM
MAX.
V
I
Tj = 110°C
rated
RRM
RRM
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
R
Junction to case (DC)
Junction to ambient (DC)
°C/W
°C/W
2.5
60
th(j-c)
TO-220AB
TO-263
th(j-a)
²
S =1.0 cm
45
S= copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Package
Part Number
Sensitivity
200~~1000
200~~1000
STYNx10S
15 mA
15 mA
TO-263
TO-220AB
S TYNx10
OTHER INFORMATION
Part Number
Marking
Weight
1.5 g
Base Quantity
Packing mode
Tube
50
STYN x10S
STYN x10S
S TYN x10
S TYN x10
2.3 g
250
B ulk
Note: x = voltage
相关型号：
©2020 ICPDF网 联系我们和版权申明