SUB60N04-15L [ETC]
Temperature Sensing MOSFET N-Channel 40-V (D-S)(112.72 k) ; 温度传感MOSFET N通道40 -V （ DS ） （ 112.72 K）\n
| 型号： | SUB60N04-15L |
| 厂家： | 
ETC |
| 描述： | Temperature Sensing MOSFET N-Channel 40-V (D-S)(112.72 k)
|
| 文件： | 总8页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUB60N04-15LT
New Product
Vishay Siliconix
Temperature Sensing MOSFET, N-Channel 40-V (D-S)
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.012 @ V = 10 V
60
GS
40
0.015 @ V = 4.5 V
60
GS
Notes:
a. Package limited.
FEATURES
D Temperature-Sense Diodes for Thermal Shutdown
D Logic-Level Low On-Resistance
D Avalanche Rated
D Low Gate Charge
D Fast Turn-On Time
D 5-Lead D2PAK
D 175_C Junction Temperature
D >2000-V ESD Rated
DESCRIPTION
The SUB60N04-15LT is a 40-V n-channel, 15-mW logic level
MOSFET in a 5-lead D2PAK package built on the Vishay
Siliconix proprietary high-cell density TrenchFET technology.
The gate of the MOSFET is protected from high voltage
transients by two back-to-back poly-silicon zener diodes.
Two anti-parallel electrically isolated poly-silicon diodes are
used to sense the temperature changes in the MOSFET.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
2
D PAK
D
TO-263, 5 Leads
T
T
1
D
1
D
2
G
2
1 2 3 4 5
S
N-Channel MOSFET
G T D T
S
1
2
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-1
SUB60N04-15LT
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
40
"20
50
DS
GS
V
V
GS
Clamp Current
I
mA
G
a
T = 25_C
c
60
Continuous Drain Current (T = 175_C)
I
D
J
T = 100_C
c
50
50
A
Avalanche Current
I
AR
Repetitive Avalanche Energy
Source-to-Anode Voltage
Source-to-Cathode Voltage
L = 0.1 mH
E
AR
V
SA
V
SC
125
mJ
V
100
100
T
= 25_C
110
C
a
Maximum Power Dissipation
P
D
W
d
T = 25 _C
A
3.75
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
Junction-to-Ambient
R
40
thJA
thJC
_C/W
Junction-to-Case
R
1.35
Notes:
a. Package limited.
b. Duty Cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1-inch square PCB FR4.
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-2
SUB60N04-15LT
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Clamp Voltage
V
V
= 0 V, I = 1 mA
GS D
40
10
1
(BR)DSS
V
V
DS
= 0 V, I = 20 mA
V
GS
V
GS
20
2
G
V
V
= V , I = 1 mA
GS DS
Gate Threshold Voltage
Gate-Body Leakage
V
DS
GS(th)
= 0 V, V = "5 V
I
"250
1
nA
DS
GS
GSS
Zero Gate Voltage Drain Current
I
V
= 35 V, V = 0 V
DSS
DSS
DS GS
V
V
= 35 V, V = 0 V, T = 125_C
= 35 V, V = 0 V, T = 175_C
50
mA
DS
GS
J
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Sense Diode Forward Voltage
I
250
DS
GS
J
V
GS
= 10 V, I = 20 A
0.0095
0.012
0.012
0.018
0.024
0.015
735
D
V
V
= 10 V, I = 20 A, T = 125_C
GS
D
J
a
r
W
DS(on)
= 10 V, I = 20 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 20 A
D
I
I
= 250 mA
= 250 mA
V
FD1
675
675
25
F
V
FD2
735
mV
S
F
From I = 125 mA to I = 250 mA
Sense Diode Forward Voltage Increase
DV
F
50
F
F
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 20 A
35
D
Dynamicb
Input Capacitance
C
1920
560
210
51
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
nC
DS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
70
g
c
Gate-Source Charge
Q
gs
Q
gd
V
DS
= 20 V, V = 10 V, I = 25 A
5.5
12
GS
D
c
Gate-Drain Charge
c
Turn-On Delay Time
t
20
40
120
70
d(on)
c
Rise Time
t
r
70
V
= 20 V, R = 0.8 W
L
DD
ns
c
I
D
] 25 A, V
= 10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
35
d(off)
c
Fall Time
t
f
20
40
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
60
240
1.4
60
S
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 60 A, V = 0 V
V
GS
Reverse Recovery Time
t
rr
I
F
= 60 A, di/dt = 100 A/ms
40
ns
Notes:
a
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-3
SUB60N04-15LT
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
= 10 thru 7 V
200
V
GS
T
C
= –55_C
6 V
200
150
100
50
160
120
80
40
0
25_C
125_C
5 V
4 V
1, 2 V
3 V
8
0
0
2
4
6
10
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
60
40
20
0
0.018
0.015
0.012
0.009
0.006
0.003
0
T
C
= –55_C
V
= 4.5 V
= 10 V
GS
25_C
V
GS
125_C
0
20
40
60
80
100
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
15
12
9
V
= 20 V
= 25 A
GS
I
D
C
iss
6
C
oss
C
rss
3
0
0
0
8
16
24
32
40
0
15
30
Q – Total Gate Charge (nC)
g
45
60
75
V
– Drain-to-Source Voltage (V)
DS
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-4
SUB60N04-15LT
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.6
1.2
0.8
0.4
0
100
V
= 10 V
= 20 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.4
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Drain-Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
300
60
50
40
30
I
D
= 1 mA
100
10
1
I
AV
(A) @ T = 25_C
J
I
(A) @ T = 150_C
AV
J
0.1
–50 –25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
J
– Junction Temperature (_C)
Sense Diode Forward Voltage
vs. Temperature
Sense Diode Forward Voltage
1.0
0.8
0.6
0.4
0.2
0
2000
I
F
(mA) @ 25_C
1600
1200
800
400
0
V
F
(V) @ I = 250 mA
F
V
F
(V) @ I = 125 mA
F
–50 –25
0
25
50
75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
T
J
– Junction Temperature (_C)
V (V)
F
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-5
SUB60N04-15LT
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS OF GĆS CLAMPING DIOD_CES U(N2L5ESS NOTED)
Gate-Source Voltage vs. Gate Current
10
1
–1
10
I
I
(mA) @ 150_C
(mA) @ 25_C
G
–2
10
10
–3
G
–4
10
10
–5
–6
10
10
–7
0
4
8
12
16
20
V
GS
(V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
500
100
75
60
45
30
15
0
10 ms
Limited
by r
DS(on)
100 ms
10
1 ms
10 ms
100 ms
dc
T
= 25_C
C
Single Pulse
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-6
SUB60N04-15LT
New Product
Vishay Siliconix
APPLICATIONS
+5 V
C2
0.1 mF
R1
180 kW
1%
C3
0.1 mF
R5, 18 kW
R6, 560 W
Gate
Output
Signal
IC1, LMV321
–
+
C1
560 pF
R7
10 kW
1%
R4, 560 kW, 1%
R3, 18 kW
INPUT
R2
22 kW
1%
Signal Ground
Power Ground
FIGURE 1.
The SUB60N04-15LT provides a non-committed diode to
allow temperature sensing of the actual MOSFET chip. The
addition of one simple comparator and a few other
components is all that is required to implement a temperature
protected MOSFET. Since it has a very tight tolerance on
forward voltage, the forward voltage of the diode can be used
to provide to shutdown signal. The diode forward voltage falls
to around 0.4 V with a bias current of 250 mA when the
MOSFET chip is close to the maximum permitted temperature
value. The external comparator used to detect over
temperature can also be used as a driver stage for the
MOSFET, meaning that the on/off input is logic compatible,
and can be driven from a logic gate.
accepted. For PWM and other faster applications, a buffer
should be added to drive the MOSFET, or the schematic in
Figure 2 used to give fast switching speed.
The reference voltage for the trip point is derived from the 5-V
rail, which should have reasonable voltage accuracy and
stability (" 0.5 V). A voltage reference could be added if
required, but the circuit is only intended to make the MOSFET
invulnerable to drastic faults that might otherwise cause it to
fail, not to give a precise shutdown point. 1% resistors are
used to provide a reference voltage of 0.545 V, giving a
nominal rising trip point of around 155_C, allowing for the
hysteresis drop over R7.
A typical circuit is shown in Figure 1. Here a LMV321
operational amplifier is used to drive the MOSFET, and as a
comparator to when the maximum junction temperature is
reached. The circuit will turn on once more when the chip has
cooled to approximately 110_C, and can cycle on and off until
the fault is cleared or the power is removed. This circuit has
assumed a 5-V rail is available, but the circuit could easily be
adapted for a 12-V rail, for example.
A 560-pF capacitor across the inputs of the comparator
provides some noise immunity and gives a response time of
around a micro second, just faster than the switching speed of
the MOSFET in this circuit (faster response has diminishing
returns as the turn-off time is fixed). This does have a side
effect of introducing such a delay at turn-on. If this is an issue
(although if this delay is an issue, the switching time should be
reviewed also), a separate driver could be added using a
comparator for over temperature detection only as shown in
Figure 2. The diode is then left biased whenever the power is
appliedto the load and there is no turn-on delay. In a very noisy
environment C1 should be increased and additional
capacitors may also be required from each input of the
comparator to ground and on the logic input.
The LMV321 op amp was selected to give reasonable output
current to drive the MOSFET at a reasonable price. The SC-70
package means that the protection circuit uses very little board
space. However the limited output current means that it can
only be used in slow switching applications, where one
microsecond switching time and limited dv/dt immunity can be
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-7
SUB60N04-15LT
New Product
Vishay Siliconix
The bias current of 250-mA nominal is derived from the input
signal. In this manner, a simple comparator can be used as a
driver for normal on/off operation and a fault detector circuit.
The circuit used to provide the input signal must therefore be
able to source 0.25 mA with no significant voltage drop.
and therefore should be used if input current requirements
become a problem.
With the input high, bias current flows and as long as the
forward voltage of the diode is higher than 0.465 V, the
comparatoroutputishighandtheMOSFETison.Iftheforward
voltage of the diode drops below 0.465 V, the comparator
output goes low and the MOSFET is turned off. The gate drive
voltage can also be used as an output signal (if required) for
logic to interpret and to signify that there is a fault. Note the
cathode of the sensing diode should NOT be connected
directly to the source of the MOSFET as the noise introduced
by high currents in the source loop could affectoperationofthe
sensing circuit. A separate signal ground should be used and
connect to power ground at one point only.
The LMV321 can provide a output current of 60-mA typical,
which provides reasonable switching time for non-PWM
applications. A 560-W resistor is added in series to protect the
op amp and to prevent instability, but will result in switching
times of several micro seconds. A lower value may be possible
depending on layout, but may violate conditions
recommended by the op amp manufacturer.
Hysteresis is added by means of a resistor network around the
comparator. Approximately 40_C hysteresis is added using
the components shown. This hysteresis could be reduced if
necessary by increasing the value of R4. Another means of
implementing hysteresis is to use the output of the comparator
toprovidesomeofthebiascurrentforthesensingdiode.When
the comparator output is low (tripped/off), the bias current is
reduced by, say, 150 mA, causing the forward voltage to drop
by around 50 mV. This concept would also allow a lower
sourcingcapabilityinthelogiccircuitprovidingtheon/offsignal
A variation on this schematic is shown in Figure 2. Here a low
cost comparator (again in a SOT-23 or SC-70) is used to
provide a fault output signal only. The diode bias current is
taken from the 5 V.Inthismannerthediodebiasisappliedatall
times, so the noise filtering capacitor, C1 will not introduce a
turn-on delay. The fault output signal could be used to enable
the gate driver as shown, or fed to larger monitoring circuit to
shutdown the MOSFET.
+5 V
C2
0.1 mF
R1
180 kW
1%
C3
0.1 mF
R5
10 kW
DRIVER
IN
IC1, LMV331
ENABLE
–
+
C1
560 pF
R6
10 kW
1%
R4, 560 kW, 1%
R3, 18 kW
R2
22 kW
1%
Signal Ground
Power Ground
FIGURE 2.
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-8
相关型号：
SUB60N06-14
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
VISHAY
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