首页 |元器件品牌

SY101474-3 [ETC]

1K x 4 ECL RAM; 1K ×4 ECL RAM
SY101474-3
型号： SY101474-3
厂家： ETC    ETC
描述：

1K x 4 ECL RAM
1K ×4 ECL RAM
文件： 总10页 (文件大小：176K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SY10474-3/4/5/7  
SY100474-3/4/5/7
SY101474-3/4/5/7  
1K x 4 ECL RAM  
SYNERGY  
SEMICONDUCTOR  
FEATURES  
DESCRIPTION  
■ Address access time, tAA: 3/4/5/7ns max.  
■ Chip select access time, tAC: 2ns max.  
■ Write pulse width, tWW: 3ns min.  
■ Edge rate, tr/tf: 500ps typ.  
The Synergy SY10/100/101474 are 4096-bit Random  
Access Memories (RAMs), designed with advanced Emitter  
Coupled Logic (ECL) circuitry. The devices are organized  
as 1024-words-by-4-bits and meet the standard 10K/100K  
family signal levels. The SY100474 is also supply voltage-  
compatible with 100K ECL, while the SY101474 operates  
from 10K ECL supply voltage (–5.2V). All feature on-chip  
voltage and temperature compensation for improved noise  
margin.  
■ Power supply current, IEE: –300mA, –220mA  
for –5/7ns  
■ Superior immunity against alpha particles provides  
virtually no soft error sensitivity  
The SY10/100/101474 employ proprietary circuit design  
techniques and Synergy’s proprietary ASSET advanced  
bipolar technology to achieve extremely fast access, write  
pulse width and write recovery times. ASSET uses  
proprietary technology concepts to achieve significant  
reduction in parasitic capacitance while improving device  
packing density. Synergy’s circuit design techniques, coupled  
with ASSET, result not only in ultra-fast performance, but  
also allow device operation with virtually no soft error  
sensitivity and with outstanding device reliability in volume  
production.  
■ Built with advanced ASSET™ technology  
■ Fully compatible with industry standard 10K/100K  
ECL I/O levels  
■ Noise margins improved with on-chip voltage and  
temperature compensation  
■ Open emitter output for easy memory expansion  
■ ESD protection of 2000V  
■ Available in 24-pin Flatpack and 28-pin PLCC and  
MLCC packages  
BLOCK DIAGRAM  
A
0
A1  
A2  
A3  
Y-Decoder/Driver  
Memory Cell Array  
A4  
A5  
A6  
A7  
A8  
A9  
CS  
SA/WA*  
SA/WA  
SA/WA  
SA/WA  
WE  
DI  
0 DO0 DI1 DO1 DI2 DO2 DI3 DO3  
*
SA = Sense Amplifier  
WA = Write Amplifier  
Rev.: D  
Amendment:/1  
© 1999 Micrel-Synergy  
Issue Date: December 1999  
1
SY10/100/101474-3  
SY10/100/101474-4  
SY10/100/101474-5  
SY10/100/101474-7  
SYNERGY  
SEMICONDUCTOR  
PIN CONFIGURATIONS  
2
4
1 28 27 26  
25  
3
24 23 22 21 20 19  
A
A
A
0
1
2
5
DI  
3
2
1
WE  
CS  
1
2
3
4
5
6
18  
17  
16  
15  
14  
13  
A
A
A
A
A
A
5
4
3
2
1
0
6
24  
23  
22  
21  
20  
19  
DI  
DI  
Top View  
MLCC (M28-1)  
or  
7
Top View  
Flatpack  
F24-1  
DI  
DI  
DI  
DI  
0
1
2
3
NC  
NC  
DI  
8
PLCC (J28-1)  
9
A3  
0
A
4
5
10  
11  
CS  
A
WE  
7
8 9 10 11 12  
12 13 14 15 16 17 18  
PIN NAMES  
TRUTH TABLE  
Input  
Label  
A0 - A9  
CS  
Function  
Address Inputs  
Chip Select  
CS  
WE  
X
DIN  
X
Output  
Mode  
H
L
L
Disabled  
Write “H”  
Write “L”  
Read  
L
L
L
H
WE  
Write Enable  
Data Input (DIN)  
L
L
L
DI0 - DI3  
DO0 - DO3  
VCC  
L
H
X
DOUT  
Data Output (DOUT)  
GND (0V)  
NOTE:  
H = High Voltage Level  
L = Low Voltage Level  
X = Don’t Care  
VCCA  
VEE  
Output GND (0V)  
Supply Voltage  
No Connect  
NC  
2
SY10/100/101474-3  
SY10/100/101474-4  
SY10/100/101474-5  
SY10/100/101474-7  
SYNERGY  
SEMICONDUCTOR  
FUNCTIONAL DESCRIPTION  
The Synergy SY10/100/101474 are 4096-bit RAMs and the non-inverted output data at the addressed location  
organized as 1024-words-by-4-bits. Memory cell selection is transferred to DOUT (DO0 through DO3) to be read out.  
is achieved by using the 10 address bits designated as A0 Open emitter outputs are provided for maximum flexibility  
10  
through A9. Each of the 2  
possible input address and memory expansion by allowing output wire-OR  
combinations corresponds to a unique word location in connections. External termination of 50Ω to –2.0V or an  
memory. The active low Chip Select (CS) is provided for equivalent circuit must be used to provide the specified  
memory expansion. The active low Write Enable (WE) output levels.  
controls the read and write operation. Data resident on the  
The outputs are brought to a logical low level when the  
DIN inputs (DI0 through DI3) is written into the addressed RAM is being written into (WE = LOW) or when the device  
location only when WE and CS are held low. In order to is deselected via the active low chip select pin (CS = HIGH).  
perform a read operation, WE is held high, CS is held low  
(1)  
ABSOLUTE MAXIMUM RATINGS  
GUARANTEED OPERATING CONDITIONS  
Parameter  
Supply Voltage(1)  
Case Temperature  
Symbol Min. Typ. Max. Unit  
Symbol  
Rating  
Value  
Unit  
10K  
VEE  
TC  
–5.46 –5.2 –4.94  
75  
–4.8 –4.5 –4.2  
85  
–5.46 –5.2 –4.94  
85  
V
°C  
V
VEE  
VEE Pin Potential  
to VCC Pin  
+0.5 to –7.0  
V
0
—
VIN  
Input Voltage  
+0.5 to VEE  
V
Supply Voltage(1) 100K  
Case Temperature  
VEE  
TC  
IOUT  
DC Output Current  
(Output High)  
–30  
mA  
0
—
°C  
V
Supply Voltage(1) 101K  
Case Temperature  
VEE  
TC  
TC  
Temperature Under Bias  
Storage Temperature  
–55 to +125  
–65 to +150  
°C  
°C  
0
—
°C  
Tstore  
NOTE:  
NOTE:  
1. Referenced to VCC.  
1. PermanentdevicedamagemayoccurifABSOLUTEMAXIMUMRATINGS  
are exceeded. This is a stress rating only and functional operation is not  
implied at conditions other than those detailed in the operational sections  
ofthisdatasheet. ExposuretoABSOLUTEMAXIMUMRATlNGconditions  
for extended periods may affect device reliability.  
RISE AND FALL TIME  
CAPACITANCE  
Parameter  
Code(1) Symbol Min. Typ. Max. Unit  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Output Rise  
Time  
F
S
tr  
—
—
500  
1500  
—
—
ps  
Input Pin  
Capacitance  
CIN  
—
4
—
pF  
Output Fall  
Time  
F
S
tf  
—
—
500  
1500  
—
—
ps  
Output Pin  
Capacitance  
COUT  
—
5
—
pF  
NOTE:  
1. F = Fast Edge Rate  
S = Standard Edge Rate  
3
SY10/100/101474-3  
SY10/100/101474-4  
SY10/100/101474-5  
SY10/100/101474-7  
SYNERGY  
SEMICONDUCTOR  
10K DC ELECTRICAL CHARACTERISTICS  
VCC = 0V; TC = 0°C to +75°C; VEE = –5.2V; Airflow > 2.5m/s; Output Load = 50Ω to –2.0V  
Symbol  
Parameter  
TC  
Min.  
Max.  
Unit  
Condition  
VOH  
Output High Voltage  
0°C  
+25°C  
+75°C  
–1000  
–960  
–900  
–840  
–810  
–720  
mV  
VIN = VIH Max. or VIL Min.  
VIN = VIH Max. or VIL Min.  
VIN = VIH Min. or VIL Max.  
VIN = VIH Min. or VIL Max.  
VOL  
VOHC  
VOLC  
VIH  
Output Low Voltage  
Output High Voltage  
Output Low Voltage  
Input High Voltage  
Input Low Voltage  
0°C  
+25°C  
+75°C  
–1870  
–1850  
–1830  
–1665  
–1650  
–1625  
mV  
mV  
mV  
mV  
mV  
0°C  
+25°C  
+75°C  
–1020  
–980  
–920  
—
—
—
0°C  
+25°C  
+75°C  
—
—
—
–1645  
–1630  
–1605  
0°C  
+25°C  
+75°C  
–1145  
–1105  
–1045  
–840  
–810  
–720  
Guaranteed Input Voltage High  
for All Inputs  
VIL  
0°C  
+25°C  
+75°C  
–1870  
–1850  
–1830  
–1490  
–1475  
–1450  
Guaranteed Input Voltage Low  
for All Inputs  
IIH  
IIL  
Input High Current  
0°C to +75°C  
0°C to +75°C  
0°C to +75°C  
0°C to +75°C  
0°C to +75°C  
0°C to +75°C  
0.0  
–2  
30  
40  
–2  
0.0  
20  
2
µA  
µA  
µA  
µA  
µA  
µA  
VIN = VIH Max.  
VIN = VIL Min.  
VIN = VIL Min.  
VIN = VIH Max.  
VIN = VIL Min.  
VIN = VIH Max.  
Input Low Current  
IIL  
CS Input Low Current  
CS Input High Current  
WE Input Low Current  
WE Input High Current  
Power Supply -3ns, -4ns  
170  
220  
35  
IIH  
IIL  
IIH  
IEE  
60  
–300  
–220  
—
mA  
All Inputs and Outputs Open  
0°C to +75°C  
Current  
-5ns, -7ns  
100K/101K DC ELECTRICAL CHARACTERISTICS  
VCCA = 0V  
VCC = 0V  
VEE = –4.5V (100K)  
VEE = –5.2V (101K)  
TC = 0°C to +85°C  
Airflow > 2.5m/s  
Output Load = 50Ω to –2.0V  
Symbol  
VOH  
VOL  
VOHC  
VOLC  
VIH  
VIL  
Parameter  
Min.  
–1025  
–1810  
–1035  
—
Max.  
–880  
–1620  
—
Unit  
Condition  
Output High Voltage  
mV  
mV  
mV  
mV  
mV  
mV  
µA  
µA  
µA  
µA  
µA  
µA  
VIN = VIH Max. or VIL Min.  
VIN = VIH Max. or VIL Min.  
VIN = VIH Min. or VIL Max.  
VIN = VIH Min. or VIL Max.  
Guaranteed Input Voltage Highfor All Inputs  
Guaranteed Input Voltage Lowfor All Inputs  
VIN = VIH Max.  
Output Low Voltage  
Output High Voltage  
Output Low Voltage  
Input High Voltage  
–1610  
–880  
–1475  
20  
–1165  
–1810  
0.0  
Input Low Voltage  
IIH  
Input High Current  
IIL  
Input Low Current  
–2  
2
VIN = VIL Min.  
IIL  
CS Input Low Current  
CS Input High Current  
WE Input Low Current  
WE Input High Current  
Power Supply 3ns, 4ns  
30  
170  
VIN = VIL Min.  
IIH  
40  
220  
VIN = VIH Max.  
IIL  
–2  
35  
VIN = VIL Min.  
IIH  
0.0  
60  
VIN = VIH Max.  
IEE  
–300  
–220  
—
mA  
All Inputs and Outputs Open  
Current  
-5ns, -7ns  
4
SY10/100/101474-3  
SY10/100/101474-4  
SY10/100/101474-5  
SY10/100/101474-7  
SYNERGY  
SEMICONDUCTOR  
AC ELECTRICAL CHARACTERISTICS  
AC TEST CONDITIONS  
VCC = VCCA = 0V  
VEE = –5.2V ± 5%(10K)  
VEE = –4.5V ± 0.3V(100K) TC = 0°C to +85°C (100K/101K)  
VEE = –5.2V ± 5%(101K) Airflow > 2.5m/s  
Output Load = 50Ω to –2.0V  
TC = 0°C to +75°C (10K)  
TC  
VIH  
VIL  
10K  
0°C  
+25°C  
+75°C  
–0.933V  
–0.90V  
–0.863V  
–1.733V  
–1.70V  
–1.663V  
100/101K  
0°C to +85°C  
–0.90V  
–1.70V  
Loading Condition  
GND  
Input Pulse  
V
IH  
80%  
20%  
V
CCA  
VCC  
OUT  
V
IL  
V
EE  
EE  
t
r
tf  
R
L
CL  
tr = tf = 1.0ns typ.  
OUTPUT LOAD: RL  
CL  
=
=
50Ω  
5pF* (typ.)  
0.01µF  
* (Modeled as 50Ω transmission line  
terminated to –2V.)  
V
–2.0V  
NOTE: All timing measurements referenced to 50% input levels.  
READ CYCLE  
SY10474-3  
SY100474-3  
SY101474-3  
SY10474-4  
SY100474-4  
SY101474-4  
SY10474-5  
SY100474-5  
SY101474-5  
SY10474-7  
SY100474-7  
SY101474-7  
Symbol  
Parameter  
Min.  
Max.  
Min.  
—
Max.  
Min.  
—
Max.  
Min.  
—
Max.  
Unit  
ns  
tAA TAVQV Address Access Time  
—
—
—
3
2
2
4
2
2
5
3
3
7
3
3
tAC TSLQV Chip Select Access Time  
tRC TSHQL Chip Select Recovery Time  
—
—
—
ns  
—
—
—
ns  
READ CYCLE TIMING DIAGRAM  
CS  
50%  
Address  
50%  
t
AC  
t
RC  
tAA  
80%  
50%  
20%  
DOUT  
50%  
DOUT  
t
r
tf  
5
SY10/100/101474-3  
SY10/100/101474-4  
SY10/100/101474-5  
SY10/100/101474-7  
SYNERGY  
SEMICONDUCTOR  
WRITE CYCLE  
SY10474-3  
SY100474-3  
SY101474-3  
SY10474-4  
SY100474-4  
SY101474-4  
SY10474-5  
SY100474-5  
SY101474-5  
SY10474-7  
SY100474-7  
SY101474-7  
Symbol  
Parameter  
Min.  
3
Max.  
—
2
Min.  
4
Max.  
—
2
Min.  
Max.  
—
3
Min.  
Max.  
—
4
Units  
ns  
tWW  
tWS  
tWR  
tSA  
TWLWH  
TWLQL  
TWHQV  
TAVWL  
TSLWL  
TDVWL  
TWHAX  
TWHSX  
TWHDX  
Write Pulse Width  
Write Disable Time  
Write Recovery Time  
Address Set-up Time  
Chip Select Set-up Time  
Data Set-up Time  
5
—
—
1
5
—
—
1
—
—
1
—
—
1
ns  
3
4
5
5
ns  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ns  
tSC  
tSD  
tHA  
tHC  
tHD  
0
0
0.5  
0.5  
1
1
ns  
0
0
1
ns  
Address Hold Time  
Chip Select Hold Time  
Data Hold Time  
1
1
1
ns  
1
1
1
1
ns  
1
1
1
1
ns  
WRITE CYCLE TIMING DIAGRAM  
CS  
Address  
DIN  
t
SD  
tHD  
WE  
t
SA  
t
WW  
tHC  
DOUT  
50%  
t
SC  
t
WS  
tWR  
6
SY10/100/101474-3  
SY10/100/101474-4  
SY10/100/101474-5  
SY10/100/101474-7  
SYNERGY  
SEMICONDUCTOR  
PRODUCT ORDERING CODE  
Edge  
Rate  
Package  
Type  
Operating  
Range  
Speed (ns)  
Ordering Code  
3
SY10/100/101474-3FCF  
SY10/100/101474-3MCF  
Fast  
Fast  
F24-1  
M28-1  
Commercial  
Commercial  
4
5
SY10/100/101474-4FCF  
SY10/100/101474-4MCF  
Fast  
Fast  
F24-1  
M28-1  
Commercial  
Commercial  
SY10/100/101474-5FCS  
SY10/100/101474-5JCS  
SY10/100/101474-5JCSTR  
Standard  
Standard  
Standard  
F24-1  
J28-1  
J28-1  
Commercial  
Commercial  
Commercial  
7
SY10/100/101474-7FCS  
SY10/100/101474-7JCS  
SY10/100/101474-7JCSTR  
Standard  
Standard  
Standard  
F24-1  
J28-1  
J28-1  
Commercial  
Commercial  
Commercial  
7
SY10/100/101474-3  
SY10/100/101474-4  
SY10/100/101474-5  
SY10/100/101474-7  
SYNERGY  
SEMICONDUCTOR  
24 LEAD CERPACK (F24-1)  
8
SY10/100/101474-3  
SY10/100/101474-4  
SY10/100/101474-5  
SY10/100/101474-7  
SYNERGY  
SEMICONDUCTOR  
28 LEAD PLASTIC LEADED CHIP CARRIER (J28-1)  
9
WWW.ALLDATASHEET.COM  
Copyright © Each Manufacturing Company.  
All Datasheets cannot be modified without permission.  
This datasheet has been download from :  
www.AllDataSheet.com  
100% Free DataSheet Search Site.  
Free Download.  
No Register.  
Fast Search System.  
www.AllDataSheet.com  

相关型号：

SY101474-3FCF

 1K x 4 ECL RAM
ETC

SY101474-3MCF

 1K x 4 ECL RAM
ETC

SY101474-4

 1K x 4 ECL RAM
ETC

SY101474-4FCF

 1K x 4 ECL RAM
ETC

SY101474-4MCF

 1K x 4 ECL RAM
ETC

SY101474-5

 1K x 4 ECL RAM
ETC

SY101474-5FCS

 1K x 4 ECL RAM
ETC

SY101474-5JCS

 1K x 4 ECL RAM
ETC

SY101474-5JCSTR

 1K x 4 ECL RAM
ETC

SY101474-7

 1K x 4 ECL RAM
ETC

SY101474-7FCS

 1K x 4 ECL RAM
ETC

SY101474-7JCS

 1K x 4 ECL RAM
ETC
©2020 ICPDF网 联系我们和版权申明