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T1189N [ETC]

PHASE CONTROL THYRISTORS; 相位控制晶闸管

T1189N


型号：	T1189N
厂家：	ETC
描述：	PHASE CONTROL THYRISTORS 相位控制晶闸管栅极
文件：	总3页 (文件大小：1210K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

T1190

TELECOMMUNICATIONS PRODUCTS

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PULSE

T1190N

Netz-Thyristor Phase Control Thyristor

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INFINEON

T1190N12TOF

Silicon Controlled Rectifier, 2770A I(T)RMS, 1190000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element

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INFINEON

T1190N12TOF VT

T1190N 相位控制晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 75mm，高度 26mm。

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INFINEON

T1190N12TOF(VT)

Silicon Controlled Rectifier,

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INFINEON

T1190N12TOFVTXPSA1

Silicon Controlled Rectifier, 2770A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,

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INFINEON

T1190N14TOF VT

T1190N 相位控制晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 75mm，高度 26mm。

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INFINEON

T1190N14TOFVTXPSA1

Silicon Controlled Rectifier, 2770A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,

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INFINEON

T1190N16TOF VT

T1190N 相位控制晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 75mm，高度 26mm。

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INFINEON

T1190N18TOF

Silicon Controlled Rectifier, 2770A I(T)RMS, 1190000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element

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INFINEON

T1190N18TOF VT

T1190N 相位控制晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 75mm，高度 26mm。

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INFINEON

T1190N18TOF(VT)

Silicon Controlled Rectifier,

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INFINEON

T1190N18TOFVTHOSA1

Silicon Controlled Rectifier

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INFINEON

T1190N18TOFVTXPSA1

Silicon Controlled Rectifier, 2770A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element,

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INFINEON

T1190NL

TELECOMMUNICATIONS PRODUCTS

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PULSE

T11X

RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20 ohm - 5000000 ohm

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VISHAY

T11X2.2K+-5%SBO80E3

Potentiometer, Cermet, 0.5W, 2200ohm, 350V, 5% +/-Tol, -100,100ppm/Cel, 4935,

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VISHAY

T11X202MLB28

RES,TAPPED,CERMET,2K OHMS,350WVDC,20% +/-TOL,-100,100PPM TC,4935 CASE

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VISHAY

T11X220K+-5%SBO80E3

Potentiometer, Cermet, 0.5W, 220000ohm, 350V, 5% +/-Tol, -100,100ppm/Cel, 4935,

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VISHAY

T11X2K+-20%SBO80E3

Potentiometer, Cermet, 0.5W, 2000ohm, 350V, 20% +/-Tol, -100,100ppm/Cel, 4935,

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VISHAY

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