TP30-XXXSERIES [ETC]

TRISIL ; TRISIL\n

TP30-XXXSERIES


型号：	TP30-XXXSERIES
厂家：	ETC
描述：	TRISIL TRISIL\n
文件：	总6页 (文件大小：64K)
中文：	中文翻译
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TP30-xxx Series

TRISIL^TM

FEATURES

BIDIRECTIONAL CROWBAR PROTECTION.

VOLTAGE RANGE: FROM 62 V TO 270 V.

HOLDING CURRENT :

I_H= 150 mA min.

REPETITIVE PEAK PULSE CURRENT :

I_PP= 30 A, 10/1000 µs.

JEDEC REGISTERED PACKAGE OUTLINE

F126

(JEDEC DO-204AC)

DESCRIPTION

SCHEMATIC DIAGRAM

The TP30-xxx series has been designed to protect

telecommunication equipment against lightning

surges and overvoltages induced by AC power

lines.

Peak Surge

Voltage

(V)

Voltage

Waveform

Current

Admissible Necessary

COMPLIES WITH THE

FOLLOWING STANDARDS:

Waveform

Ipp

(A)

Resistor

(µs)

(µs)

(Ω)

(CCITT) ITU-K20

(CCITT) ITU-K17

VDE0433

1000

1500

2000

2000

10/700

10/700

10/700

1.2/50

5/310

5/310

5/310

1/20

25

38

40

50

-

-

10

-

VDE0878

IEC-1000-4-5

level 2

level 3

10/700

1.2/50

5/310

8/20

25

50

-

-

FCC Part 68, lightning surge

type A

1500

800

10/160

10/560

10/160

10/560

65

50

15.5

8.0

FCC Part 68, lightning surge

type B

1000

9/720

5/320

25

-

BELLCORETR-NWT-001089

First level

2500

1000

2/10

10/1000

2/10

10/1000

125

30

15.0

23.3

BELLCORETR-NWT-001089

Second level

5000

2/10

2/10

125

15.0

CNET l31-24

1000

0.5/700

0.8/310

25

-

November 1998 - Ed: 5A

1/6

TP30-xxx Series

ABSOLUTE MAXIMUM RATINGS (T_amb= 25°C)

Symbol

Parameter

Value

Unit

W

Power dissipationon infinite heatsink

Peak pulse current

P

T

_amb= 50 °C

3

I_PP

10/1000 µs

8/20 µs

30

60

A

I_TSM

I²t

Non repetitivesurge peak on-statecurrent

I²t valuefor fusing

tp = 20 ms

tp = 20 ms

V_RM

15

1

A

A²s

dV/dt

Critical rate of riseof off-state voltage

5

kV/µs

T_stg

T_j

Storage temperaturerange

Maximum junctiontemperature

- 55 to + 150

150

°C

°C

Maximumleadtemperatureforsolderingduring 10sat5mmforcase

T_L

230

°C

THERMAL RESISTANCES

Symbol

Parameter

Value

60

Unit

°C/W

°C/W

Junction to leads

R_th(j-l)

R_th(j-a)

100

Junction to ambient on printed circuit

with standard footprint dimension

ELECTRICAL CHARACTERISTICS

(T_amb= 25°C)

Symbol

V_RM

I_RM

V_R

Parameter

Stand-offvoltage

Leakage current at stand-offvoltage

ContinuousReverse voltage

Breakdown voltage

Breakovervoltage

V_BR

V_BO

I_H

Holding current

I_BO

Breakovercurrent

I_PP

Peak pulse current

C

Capacitance

2/6

TP30-xxx Series

C

I_R@ V_R

max

Type

I_RM@ V_RM

V_BO@ I_BO

max

I_H

max

min

typ

typ

note 1

note 2

note 3

note 4

note 5

µA

V

µA

V

V

mA

mA

pF

TP30-62

2

2

2

2

2

2

2

2

2

2

56

61

50

50

50

50

50

50

50

50

50

50

62

68

82

90

800

800

800

800

800

800

800

800

800

800

150

150

150

150

150

150

150

150

150

150

50

50

40

40

35

35

30

30

30

30

20

20

16

16

14

14

12

12

12

12

TP30-68

TP30-100

TP30-120

TP30-130

TP30-180

TP30-200

TP30-220

TP30-240

TP30-270

90

100

120

130

180

200

220

240

270

133

160

173

240

267

293

320

360

108

117

162

180

198

216

243

Note 1:

I

measured at V guarantee V

BRmin

≥ V

R

R

R

Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1.

Note 3: See test circuit 2.

Note 4:

Note 5:

V

= 1V, F = 1MHz.

= 50V, F = 1MHz.

R

V

R

TEST CIRCUIT 1 FOR I_BOand V_BOparameters:

= 20ms

tp

Auto

Transformer

220V/2A

R1

static

relay.

140

R2

240

K

V

V

BO

measure

out

D.U.T

I

BO

measure

Transformer

220V/800V

5A

TEST PROCEDURE :

Pulse Test duration (tp = 20ms):

- For Bidirectional devices= Switch K is closed

- For Unidirectional devices = Switch K is open.

V_OUTSelection

- Device with V_BO< 250 Volt

- V_OUT= 250 V_RMS, R₁= 140 Ω.

- Device with V_BO≥ 250 Volt

- V_OUT= 480 V_RMS, R₂= 240 Ω.

3/6

TP30-xxx Series

TEST CIRCUIT 2 for I_Hparameter.

R

- V

P

D.U.T.

V

= - 48 V

BAT

Surge generator

This is a GO-NOGOTest which allowsto confirmthe holdingcurrent (I_H) level in a functional

test circuit.

TEST PROCEDURE :

1) Adjust the current level at the I_Hvalue by short circuiting the AK of the D.U.T.

2) Firethe D.U.T with a surge Current : Ipp = 10A, 10/1000 µs.

3) The D.U.T will come back off-state within 50 ms max.

4/6

TP30-xxx Series

Fig. 1:

Fig. 2:

Relative variation of holding current versus

junction temperature.

Non repetitive surge peak on-sate current

versus overload duration(Tj initial = 25°C).

IH[Tj] / IH[Tj=25°C]

ITSM(A)

20

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

F = 50Hz

15

10

5

0

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

-40

-20

0

20

40

60

80

100 120

t(s)

Tj(°C)

Fig. 3: Relative variation of junction capacitance

versus reverse applied voltage (typical values).

Note: ForVRM upper than 56V, the curve is extrapolated (dotted line)

Fig. 4: On-state voltage versus on-state current

(typical values).

IT(A)

50

C[VR]/C[VR=1V]

1.0

Tj = 25°C

20

F = 1MHz

0.5

10

5

0.2

0.1

2

1

1

10

100

300

0

1

2

3

4

5

6

7

8

9

10

VR(V)

VT(V)

Fig. 6:

junction temperature.

Relative variation of V_BOvoltage versus

Fig. 5: Variation of thermal impedance junction to

ambient versus pulse duration.

Vbo[Tj]/Vbo[Tj=25°C]

Zth(j-a)(°CW)

1.10

1E+2

1.05

1E+1

1E+0

1E-1

1.00 270 V

0.95

62 V

0.90

-40

-20

0

20

Tj(°C)

40

60

80

100

5/6

1E-3

1E-2

1E-1

1E+0

tp(s)

1E+1

1E+2 5E+2

TP30-xxx Series

ORDER CODE

TP 30 - 62

TRISIL PROTECTION

VOLTAGE

I_PP= 30 A

MARKING : Logo, Date Code, Part Number.

PACKAGE MECHANICAL DATA

F126 (Plastic) (JEDEC DO-204AC)

C

C

A

D

D

B

DIMENSIONS

REF.

Millimeters

Inches

Min. Typ. Max. Min. Typ. Max.

A

B

C

D

6.05 6.20 6.35 0.238 0.244 0.250

2.95 3.00 3.05 0.116 0.118 0.120

26

31 1.024

1.220

0.76 0.81 0.86 0.030 0.032 0.034

Packaging: Tape and reel.

Weight : 0.40g

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of

use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-

proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

1998 STMicroelectronics - Printed inItaly - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

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The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

http://www.st.com

6/6

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