TPS2157IDGQR [ETC]
Analog IC ; 模拟IC\n
| 型号： | TPS2157IDGQR |
| 厂家： | 
ETC |
| 描述： | Analog IC
|
| 文件： | 总26页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
LDO AND DUAL SWITCH WITH CONTROLLED RISE TIMES
FOR DSP AND PORTABLE APPLICATIONS
FEATURES
DESCRIPTION
Two 340-mΩ (Typical) High-Side MOSFETs
Two power-distribution switches and an adjustable
(TPS2145) or fixed (TPS2147) LDO are incorporated in
one small package, providing a power management
solution that saves up to 60% in board space over
typical implementations.
200 mA Low-Dropout Voltage Regulator In
Fixed 3.3-V or Adjustable Versions
Independent Thermal- and Short-Circuit
Protection for LDO and Each Switch
Overcurrent Indicators With Transient Filter
2.9-V to 5.5-V Operating Range
Designed to meet USB 2.0 bus-powered hub
requirements, these devices also allow core and I/O
voltage sequencing in DSP applications, or power
segmentation in portable equipment. Each current-
limitedswitchisa340-mΩ N-channelMOSFETcapable
of supplying 200 mA of continuous current. A logic
enable compatible with 5-V logic and 3-V logic controls
each MOSFET as well as the LDO in the TPS2145. The
internal charge pump provides the gate drive controlling
the power-switch rise times and fall times, minimizing
current surges during switching. The charge pump
requires no external components.
CMOS- and TTL-Compatible Enable Inputs
75-µA (Typical) Supply Current
Available in 10-Pin MSOP or 14-Pin TSSOP
(PowerPAD )
–40°C to 85°C Ambient Temperature Range
APPLICATIONS
USB Hubs and Peripherals
– Keyboards
The LDO has a drop-out voltage of only 0.35 V and with
the independent enable on the TPS2145 LDO, the LDO
can be used as an additional switch. The LDO output
range for the TPS2145 is 1 V to 3.3 V, while the
TPS2147 is fixed at 3.3 V.
– Zip Drives
– Speakers and Headsets
PDAs and Portable Electronics
DSP Power Sequencing
The TPS2145 and TPS2147 have active-low switch
enables and the TPS2155 and TPS2157 have
active-high switch enables.
LDO and dual switch family selection guide and schematics
TPS2149/59
MSOP–8
TPS2148/58
MSOP–8
TPS2145/55
TSSOP–14
TPS2147/57
MSOP–10
LDO_OUT
LDO_ADJ
VIN/SW1
VIN
LDO
LDO_OUT
VIN/SW1
LDO_EN
VIN/SW1
LDO_OUT
LDO_OUT
LDO
LDO
LDO
LDO_EN
EN2
OC1
OC1
OUT2
OUT1
OC
OUT1
OUT1
EN1
EN1
EN1
OUT1
OUT2
OUT2
OC2
OUT2
OC2
SW2
SW2
EN1
GND
EN2
GND
EN2
EN2
GND
GND
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 2001, Texas Instruments Incorporated
1
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
AVAILABLE OPTIONS
PACKAGED DEVICES
PACKAGE
AND PIN
COUNT
T
A
DESCRIPTION
ACTIVE LOW
ACTIVE HIGH
(SWITCH)
(SWITCH)
TPS2145IPWP
TPS2147IDGQ
Adjustable LDO with LDO enable
3.3-V fixed LDO
TSSOP-14
MSOP-10
TPS2155IPWP
TPS2157IDGQ
–40°C to 85°C
3.3-V Fixed LDO with LDO enable and LDO output
switch
MSOP-8
MSOP-8
TPS2148IDGN
TPS2149IDGN
TPS2158IDGN
TPS2159IDGN
3.3-V Fixed LDO, shared input with switches
NOTE: All options available taped and reeled. Add an R suffix (e.g. TPS2145IPWPR)
TPS2145, TPS2155
TSSOP (PWP) PACKAGE
(TOP VIEW)
TPS2147, TPS2157
MSOP (DGQ) PACKAGE
(TOP VIEW)
†
EN1
EN2
1
2
3
4
5
6
7
14
13
12
11
10
9
OUT1
VIN/SWIN1
SWIN2
LDO_OUT
OUT2
†
†
OUT1
VIN/SWIN1
SWIN2
EN1
EN2
1
2
3
4
5
10
9
†
OC1
OC2
LDO_EN
NC
GND
8
OC1
OC2
GND
LDO_OUT
OUT2
7
6
NC
LDO_ADJ
8
†
Pin 9 and 10 are active high for TPS2157.
NC – No internal connection
†
Pin 13 and 14 are active high for TPS2155.
†
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Input voltage range: V
Output voltage range: V
Maximum output current, I
Continuous output current, I
, V
,V
, V
, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
I(VIN/SWIN1) I(SWIN2) I(ENx) I(LDO_EN)
, V
O(OUTx) O(LDO_OUT) O(OCx)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
O(OCx)
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internally limited
O(OUTx), O(LDO_OUT)
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual-junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 110°C
J
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Electrostatic discharge (ESD) protection: Human body model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
Charged device model (CDM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 kV
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND.
‡
DISSIPATION RATING TABLE
T
≤ 25°C
DERATING FACTOR
T
= 70°C
T = 85°C
A
A
A
PACKAGE
POWER RATING
ABOVE T = 25°C
POWER RATING POWER RATING
A
MSOP10
PWP14
1293.1 mW
17.2 mW/°C
26.6 mW/°C
517.2 mW
800 mW
258.6 mW
400 mW
2000 mW
2
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
recommended operating conditions
MIN
2.9
2.9
0
MAX
5.5
UNIT
V
V
V
V
I(VIN/SWIN1)
I(SWIN2)
I(ENx)
5.5
Input voltage
V
5.5
0
5.5
I(LDO_EN)
LDO_OUT
200
150
550
400
100
Continuous output current, I
mA
O
OUT1, OUT2
LDO_OUT
275
200
–40
Output current limit, I
mA
O(LMT)
OUT1, OUT2
Operating virtual-junction temperature range, T
°C
J
electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
≤ 5.5 V, 2.9 V ≤ V
≤ 5.5 V, T = –40°C to 100°C (unless otherwise noted)
I(VIN/SWIN1)
I(SWIN2) J
general
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
V
V
V
= 5 V (inactive),
I(ENx)
= 0 V (inactive),
I(LDO_EN)
Off-state supply current
20
µA
= no load,
O(LDO_OUT)
= no load
O(OUTx)
V
V
= 5 V,
= 5 V
I(VIN/SWIN1)
I(SWIN2)
V
V
V
V
= 5 V (inactive),
I(ENx)
= 0 V (inactive),
I(LDO_EN)
= 0 V,
O(LDO_OUT)
Forward leakage current
1
µA
= 0 V
O(OUTx)
(measured from outputs to
ground)
V
V
= 5 V (active),
= 0 V (inactive),
= 5 V (active),
I(LDO_EN)
I(ENx)
150
100
100
µA
µA
µA
= on (active)
V
V
= 5 V,
= 5 V,
I(VIN/SWIN1)
I(SWIN2)
Total input current at VIN/SWIN1
and SWIN2
V
V
I(LDO_EN)
I(ENx)
I
I
= on (active)
No load on OUTx,
No load on LDO_OUT
V
V
I(LDO_EN)
I(ENx)
= off (inactive)
3
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
≤ 5.5 V, 2.9 V ≤ V
= 5 V, T = –40°C to 100°C (unless otherwise noted)
≤ 5.5 V, V
= 0 V or V
= 5 V,
I(VIN/SWIN1)
I(SWIN2)
I(ENx)
I(ENx)
V
I(LDO_EN)
J
power switches
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
T = –40°C to 100°C,
J
I
= 200 mA,
580
O(LDO_OUT)
IOUT1 and IOUT2 = 150 mA
Static drain-source on-state resistance,
VIN/SWIN1 or SWIN2 to OUTx
r
mΩ
DS(on)
T = 25°C,
J
I
= 200 mA,
340
O(LDO_OUT)
IOUT1 and IOUT2 = 150 mA
V
V
= 5 V,
= 0 V,
I(ENx)
I(ENx)
10
10
SWIN2 floating,
V
= 5 V
I(VIN/SWIN1)
V
V
V
V
= 5 V,
= 0 V,
I(ENx)
I(ENx)
I(SWIN2)
I(VIN/SWIN1)
V
= 5 V,
O(OUTx)
LDO_EN = don’t care
I
I
Reverse leakage current at OUTx
µA
lkg(R)
= 0,
= 2.9 V
V
V
V
V
= 5 V,
= 0 V,
I(ENx)
I(ENx)
10
= 0,
I(SWIN2)
= 0 V
I(VIN/SWIN1)
OUTx connected to GND, device enabled into short
circuit
Short circuit output current
0.2
0.4
A
OS
Delay time for asserting OC flag
Delay time for deasserting OC flag
From IOUTx at 95% of current limit level to 50% OC
From IOUTx at 95% of current limit level to 50% OC
5.5
ms
ms
10.5
timing parameters, power switches
PARAMETER
TEST CONDITIONS
MIN
0.5
TYP
MAX
6
UNIT
C
C
C
C
C
C
C
C
= 100 µF
= 1 µF
L
L
L
L
L
L
L
L
t
t
t
t
Turnon time, OUTx switch, (see Note 1)
Turnoff time, OUTx switch (see Note 1)
Rise time, OUTx switch (see Note 1)
Fall time, OUTx switch (see Note 1)
R
R
R
R
= 33 Ω
= 33 Ω
= 33 Ω
= 33 Ω
on
off
r
L
L
L
L
0.1
3
= 100 µF
= 1 µF
5.5
12
4
ms
0.05
0.5
= 100 µF
= 1 µF
5
0.1
2
= 100 µF
= 1 µF
5.5
9
f
0.05
1.2
NOTE 1. Specified by design, not tested in production.
undervoltage lockout at VIN/SWIN1
PARAMETER
UVLO Threshold
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
2.2
2.85
Hysteresis (see Note 1)
260
mV
µs
Deglitch (see Note 1)
50
NOTE 1. Specified by design, not tested in production.
4
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V ≤ 5.5 V, 2.9 V ≤ V ≤ 5.5 V, V = 0 V or V = 5 V,
I(VIN/SWIN1)
I(SWIN2)
I(ENx)
I(ENx)
V
= 5 V, T = –40°C to 100°C (unless otherwise noted) (continued)
I(LDO_EN)
J
undervoltage lockout at SWIN2
PARAMETER
UVLO Threshold
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
2.2
2.85
Hysteresis (see Note 1)
260
mV
µs
Deglitch (see Note 1)
50
NOTE 1. Specified by design, not tested in production.
electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V ≤ 5.5 V, 2.9 V ≤ V ≤ 5.5 V, V = 0 V or V = 5 V,
I(VIN/SWIN1)
I(SWIN2)
I(ENx)
I(ENx)
V
= 5 V, C
= 10 µF, T = –40°C to 100°C (unless otherwise noted)
I(LDO_EN)
L(LDO_OUT) J
fixed-voltage regulator, 3.3 V
†
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
I
= 4.25 V to 5.25 V,
= 0.5 mA to 200 mA
I(VIN/SWIN1)
O(LDO_OUT)
V
Output voltage, dc
Dropout voltage
3.20
3.3
3.40
V
O
V
= 3.2 V,
= 200 mA,
= 150 mA
I(VIN/SWIN1)
O(LDO_OUT)
O(OUT1)
0.35
0.1
V
I
I
V
= 4.25 V to 5.25 V,
= 5 mA
I(VIN/SWIN1)
O(LDO_OUT)
Line regulation voltage (see Note 1)
Load regulation voltage (see Note 1)
Short-circuit current limit
%/V
I
V
= 4.25 V,
= 5 mA to 200 mA
I(VIN/SWIN1)
O(LDO_OUT)
0.4% 1.15%
I
V
= 4.25 V,
I(VIN/SWIN1)
I
I
0.275
0.33
10
0.55
A
OS
LDO_OUT connected to GND
V
V
V
= 3.3 V,
= 0 V,
= 0 V
O(LDO_OUT)
I(VIN/SWIN1)
I(LDO_EN)
µA
Reverse leakage current into
LDO_OUT
lkg(R)
V
V
V
= 5.5 V,
= 2.9 V,
= 0 V
O(LDO_OUT)
I(VIN/SWIN1)
I(LDO_EN)
10
µA
Turnoff time, LDO_EN
transitioning low (see Note 1)
t
t
R
R
= 16 Ω, C
= 10 µF
= 10 µF
0.25
0.1
1
1
ms
ms
on
L
L
L(LDO_OUT)
L(LDO_OUT)
Turnon time, LDO_EN
transitioning high (see Note 1)
= 16 Ω, C
off
V
= 5 V, VIN/SWIN1 ramping up from 10%
I(LDO_EN)
Ramp-up time, LDO_OUT (0% to 90%) to 90% in 0.1 ms, R = 16 Ω,
0.1
1
ms
L
C
= 10 µF
L(LDO_OUT)
f = 1 kHz, C
ESR = 0.25 Ω, IO = 5 mA,
= 4.7 µF,
L(LDO_OUT)
Power supply rejection
50
dB
V
= 100 mV
I(VIN/SWIN1)p–p
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
NOTE 1. Specified by design, not tested in production.
†
5
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
≤ 5.5 V, 2.9 V ≤ V
≤ 5.5 V, V
= 0 V or V
= 5 V,
I(VIN/SWIN1)
I(SWIN2)
I(ENx)
I(ENx)
V
= 5 V, C
= 10 µF, T = –40°C to 100°C (unless otherwise noted) (continued)
I(LDO_EN)
L(LDO_OUT) J
adjustable voltage regulator (Vx = 1 V to 3.3 V)
†
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
V
V
=Vx + 0.6 V to 5.5 V and
> 2.9 V,
I(VIN/SWIN1)
I(VIN/SWIN1)
= 0.5 mA to 200 mA
V
O
Output voltage, dc (see Note 2)
0.97Vx
Vx 1.03Vx
I
O
Dropout voltage (VIN/SWIN1 to LDO_OUT)
Line regulation voltage (see Note 1)
V
= Vx – 0.1 V, I = 200 mA
0.5
0.1
V
I(VIN/SWIN1)
O
V
V
I
= Vx + 0.6 V to 5.5 V and
> 2.9 V,
I(VIN/SWIN1)
I(VIN/SWIN1)
%/V
= 5 mA
O
V
V
= Vx + 0.6 V to 5.5 V and
> 2.9 V,
= 5 mA to 200 mA
I(VIN/SWIN1)
I(VIN/SWIN1)
Load regulation voltage (see Note 1)
Short-circuit current limit
0.4%
1%
I
O
V
V
= Vx + 0.6 V to 5.5 V and
> 2.9 V,
I(VIN/SWIN1)
I(VIN/SWIN1)
I
I
0.275
0.33
10
0.575
A
OS
LDO_OUT connected to GND
V
V
V
= Vx,
= 0 V,
= 0 V
O(LDO_OUT)
I(VIN/SWIN1)
I(LDO_EN)
µA
µA
Reverse leakage current into LDO_OUT
lkg(R)
V
V
V
= 5.5 V,
= 2.8 V,
= 0 V
O(LDO_OUT)
I(VIN/SWIN1)
I(LDO_EN)
10
Turnoff time, LDO_EN
transitioning low (see Note 1)
From 50% LDO_EN to 10% LDO_OUT,
R = Vx/0.2 Ω, C = 10 µF
L
t
t
0.1
0.1
1
1
ms
ms
on
L(LDO_OUT)
From 50% LDO_EN to 90% LDO_OUT,
Turnon time, LDO_EN
transitioning high (see Note 1)
off
R
= Vx/0.2 Ω, C
= 10 µF
L
L(LDO_OUT)
V
= 5 V, VIN/SWIN1 ramping up
I(LDO_EN)
Ramp-up time, LDO_OUT (0% to 90%)
from 10% to 90% in 0.1 ms, R = Vx/0.2 Ω,
C
0.1
0
1
1
ms
ms
dB
L
= 10 µF
L(LDO_OUT)
Output tracking
LDO load R = Vx/0.2 Ω,
L
OUT1 lag time from LDO_OUT given
LDO_EN and EN1 have been asserted si-
multaneously to turnon their respective out-
puts. Measured at 1 V. (see Note 1)
C
= 10 µF,
L(LDO_OUT)
OUT1 R = 33 Ω, 10 µF,
L
V
= 3.3 V
I(VIN/SWIN1)
f = 1 kHz, C
ESR = 0.25 Ω, IO = 5 mA,
= 4.7 µF,
L(LDO_OUT)
Power supply rejection
50
V
= 100 mV
I(VIN/SWIN1)p–p
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
†
NOTES: 1. Specified by design, not tested in production.
2. Does not include error introduced by external resistive divider R1, R2 tolerance.
6
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V ≤ 5.5 V, 2.9 V ≤ V ≤ 5.5 V, V = 0 V or V = 5 V,
I(VIN/SWIN1)
I(SWIN2)
I(ENx)
I(ENx)
V
= 5 V, T = –40°C to 100°C (unless otherwise noted)
I(LDO_EN)
J
enable input, ENx (active low)
PARAMETER
TEST CONDITIONS
MIN
TYP
TYP
TYP
MAX
UNIT
V
V
V
High-level input voltage
Low-level input voltage
Input current, pullup (source)
2
IH
0.8
5
V
IL
I
I
V
V
V
= 0 V
µA
I(ENx)
enable input, ENx (active high)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
V
V
High-level input voltage
Low-level input voltage
Input current, pulldown (sink)
2
IH
0.8
5
V
IL
I
I
= 5 V
µA
I(ENx)
enable input, LDO_EN (active high)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
V
V
High-level input voltage
Low-level input voltage
2
IH
0.8
5
V
IL
I
I
Input current, pulldown
= 5 V
µA
µs
I(LDO_EN)
Falling-edge deglitch (see Note 1)
50
NOTE 1. Specified by design, not tested in production.
logic output, OCx
PARAMETER
TEST CONDITIONS
MIN
TYP
TYP
MAX
MAX
UNIT
Current sinking at V = 0.4 V
O
1
mA
thermal shutdown characteristics
PARAMETER
TEST CONDITIONS
MIN
120
110
155
UNIT
First thermal shutdown (shuts down switch or regulator
in overcurrent)
Occurs at or above specified temperature
when overcurrent is present.
Recovery from thermal shutdown
°C
Second thermal shutdown (shuts down all switches and Occurs on rising temperature, irrespective of
regulator)
overcurrent.
Second thermal shutdown hysteresis
10
7
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
TPS2145 functional block diagram
1 V to 3.3 V / 200 mA
LDO
LDO_OUT
VIN/SWIN1
LDO_EN
LDO_ADJ
OUT1
CS
Charge
Pump
Current
Limit
Driver
OC1
EN1
Thermal
Sense
CS
OUT2
OC2
SWIN2
Current
Limit
Driver
EN2
Thermal
Sense
GND
TPS2147 functional block diagram
3.3 V / 200 mA
LDO
LDO_OUT
OUT1
VIN/SWIN1
CS
Charge
Pump
Current
Limit
Driver
OC1
EN1
Thermal
Sense
OUT2
OC2
CS
SWIN2
Current
Limit
Driver
EN2
Thermal
Sense
GND
8
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
Terminal Functions
TERMINAL
PWP-14
NO.
I/O
DESCRIPTION
NAME
DGQ-10
TPS2145 TPS2155 TPS2147 TPS2157
EN1
EN1
EN2
EN2
GND
14
10
I
I
Logic level enable to transfer power to OUT1
Logic level enable to transfer power to OUT2
14
10
13
9
13
8
9
6
8
7
6
Ground
LDO_ADJ
LDO_EN
LDO_OUT
NC
7
I
I
User feedback for adjustable regulator
Logic level LDO enable. Active high.
LDO output
10
4
10
4
4
4
O
6, 9
12
11
1
6, 9
12
11
1
No connection
OC1
8
7
1
5
3
8
7
1
5
3
O
O
O
Overcurrent status flag for OUT1. Open-drain output.
Overcurrent status flag for OUT2. Open-drain output.
Switch 1 output
OC2
OUT1
OUT2
5
5
Switch 2 output
SWIN2
3
3
I
I
Input for switch 2
VIN/SWIN1
2
2
2
2
Input for LDO and switch 1; device supply voltage
detailed description
VIN/SWIN1
The VIN/SWIN1 serves as the input to the internal LDO and as the input to one N-channel MOSFET. The fixed
or adjustable LDO has a dropout voltage of 0.35 V and is rated for 200 mA of continuous current. The power
switch is an N-channel MOSFET with a maximum on-state resistance of 580 mΩ. Configured as a high-side
switch, the power switch prevents current flow from OUT to IN and IN to OUT when disabled. The power switch
is rated at 200 mA, continuous current. VIN/SWIN1 must be connected to a voltage source for device operation.
SWIN2
SWIN2 is the input to the other N-channel MOSFET, which also has a maximum on-state resistance of 580 mΩ.
Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when
disabled. The power switch is rated at 200 mA, continuous current.
OUTx
OUT1 and OUT2 are the outputs from the internal power-distribution switches.
LDO_OUT
LDO_OUT is the output of the internal 200-mA LDO. The fixed version of the LDO has an output of 3.3 V. The
adjustable version has an output voltage range of 1 V to 3.3 V.
LDO_ADJ
This input only applies to the adjustable LDO version of this device (TPS2145/55). LDO_ADJ is used to adjust
the output voltage anywhere between 1 V and 3.3 V.
LDO_EN
The active high input, LDO_EN, only applies to the adjustable LDO version of this device (TPS2145/55).
LDO_EN is used to enable the internal LDO and is compatible with TTL and CMOS logic.
9
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
detailed description (continued)
enable (ENx, ENx)
The logic enable disables the power switch. Both switches have independent enables and are compatible with
both TTL and CMOS logic.
overcurrent (OCx)
The OCx open-drain output is asserted (active low) when an overcurrent condition is encountered. The output
will remain asserted until the overcurrent condition is removed.
current sense
A sense FET monitors the current supplied to the load. Current is measured more efficiently by the sense FET
than by conventional resistance methods. When an overload or short circuit is encountered, the current-sense
circuitry sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power
FET into its saturation region, which switches the output into a constant-current mode and holds the current
constant while varying the voltage on the load.
thermal sense
A dual-threshold thermal trip is implemented to allow fully independent operation of the power distribution
switches. In an overcurrent or short-circuit condition, the junction temperature rises. When the die temperature
rises to approximately 120°C, the internal thermal sense circuitry determines which power switch is in an
overcurrent condition and turns off that switch, thus isolating the fault without interrupting operation of the
adjacent power switch. Because hysteresis is built into the thermal sense, the switch turns back on after the
device has cooled approximately 10 degrees. The switch continues to cycle off and on until the fault is removed.
undervoltage lockout
Avoltagesensecircuitmonitorstheinputvoltage. Whentheinputvoltageisbelowapproximately2.5V, acontrol
signal turns off the power switch.
PARAMETER MEASUREMENT INFORMATION
Current
Meter
DUT
A
IN
OUT
+
Figure 1. Current Limit Test Circuit
10
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
PARAMETER MEASUREMENT INFORMATION
50%
50%
V
I(ENx)
t
t
pd(off)
on
pd(on)
t
t
off
90%
10%
90%
10%
V
V
O(OUTx)
t
t
f
r
90%
10%
90%
10%
O(OUTx)
TIMING
Figure 2. Timing and Internal Voltage Regulator Transition Waveforms
TYPICAL CHARACTERISTICS
SWITCH TURNON DELAY AND RISE TIME
SWITCH TURNOFF DELAY AND FALL TIME
WITH 1-µF LOAD
WITH 1-µF LOAD
V
I(EN)
(5 V/div)
V
I(EN)
(5 V/div)
V
O(OUT)
(2 V/div)
V
O(OUT)
(2 V/div)
V = 5 V
V = 5 V
I
T
= 25°C
= 1 µF
= 25 Ω
T
= 25°C
= 1 µF
= 25 Ω
A
L
L
C
R
0
0.4 0.8 1.2 1.6
t – Time – ms
0
0.4 0.8 1.2 1.6
t – Time – ms
2
2.4 2.8 3.2 3.6 4.2
2
2.4 2.8 3.2 3.6 4.2
Figure 3
Figure 4
11
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
TYPICAL CHARACTERISTICS
SWITCH TURNOFF DELAY AND FALL TIME
WITH 120-µF LOAD
SWITCH TURNON DELAY AND RISE TIME
WITH 120-µF LOAD
V
I(EN)
(5 V/div)
V
I(EN)
(5 V/div)
V
O(OUT)
(2 V/div)
V
O(OUT)
(2 V/div)
V = 5 V
I
A
V = 5 V
I
T
= 25°C
= 120 µF
= 25 Ω
T
= 25°C
= 120 µF
= 25 Ω
A
C
R
L
L
C
R
L
L
0
4
8
12 16 20 24 28 32 36 40
t – Time – ms
0
2
4
6
8
10 12 14 16 18 20
t – Time – ms
Figure 5
Figure 6
LDO TURNON DELAY AND RISE TIME
SHORT-CIRCUIT CURRENT, SWITCH
ENABLED INTO A SHORT
WITH 4.7-µF LOAD
V = 5 V
I
A
T
= 25°C
= 4.7 µF
= 13.2 Ω
C
R
L
L
V
I(EN)
(5 V/div)
V
I(LDO_EN)
(5 V/div)
V
O(LDO_OUT)
(1 V/div
I
O(OUT)
(100 mA/div)
0
1
2
3
4
5
6
7
8
9
10
0
0.4 0.8 1.2 1.6
t – Time – ms
2
2.4 2.8 3.2 3.6 4.2
t – Time – ms
Figure 7
Figure 8
12
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
TYPICAL CHARACTERISTICS
LINE TRANSIENT RESPONSE
LOAD TRANSIENT RESPONSE
I
O(LDO_OUT)
(200 mA/div)
5.25 V
V
I(VIN)
4.25 V
∆V
O(LDO_OUT)
∆V
O(LDO_OUT)
(0.05 V/div)
(100 mV/div)
T
C
= 25°C
A
T
C
= 25°C
A
= 4.7 µF
L(LDO_OUT)
= 4.7 µF
L(LDO_OUT)
ESR = 1 Ω
ESR = 1 Ω
I
= 200 mA
O(LDO_OUT)
0
100 200 300 400
500 600 700 800 900 1000
t – Time – µs
0
100 200 300 400
500 600 700 800 900 1000
t – Time – µs
Figure 10
Figure 9
SUPPLY CURRENT
vs
SUPPLY CURRENT
vs
JUNCTION TEMPERATURE
SUPPLY VOLTAGE
140
120
100
80
140
120
100
80
60
60
40
20
0
40
20
0
–40
–20
0
T
20
40
60
80
100
2.5
3
3.5
– Supply Voltage – V
CC
4
4.5
5
5.5
– Temperature – °C
V
J
Figure 11
Figure 12
13
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
TYPICAL CHARACTERISTICS
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
vs
JUNCTION TEMPERATURE
SUPPLY VOLTAGE
0.6
0.55
0.5
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.45
0.4
SW1
SW1
SW2
0.35
0.3
SW2
0.25
0.2
0.31
0.3
0.15
0.1
–40 –20
0
20
40
60
80
100
2.5
3
3.5
CC
4
4.5
5
5.5
T
J
– Junction Temperature – °C
V
– Supply Voltage
Figure 13
Figure 14
SHORT CIRCUIT CURRENT
vs
SHORT CIRCUIT CURRENT
vs
JUNCTION TEMPERATURE
SUPPLY VOLTAGE
400
400
380
360
340
320
300
280
260
240
380
360
340
320
300
280
260
240
SW1
SW2
SW1
SW2
220
200
220
200
–40
–20
0
20
40
60
80
100
2.5
3
3.5
V – Supply Voltage
CC
4
4.5
5
5.5
T
J
– Free-Air Temperature – °C
Figure 15
Figure 16
14
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
TYPICAL CHARACTERISTICS
UNDERVOLTAGE LOCKOUT
vs
JUNCTION TEMPERATURE
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
Rising
Falling
–40 –25 –10
5
20 35 50 65 80 95 110
T
J
– Junction Temperature – °C
Figure 17
APPLICATION INFORMATION
external capacitor requirements on power lines
Ceramic bypass capacitors (0.01-µ to 0.1-µ) between VIN/SWIN1 and GND and SWIN2 and GND, close to the
device, are recommended to improve load transient response and noise rejection.
Bulkcapacitors ( 4.7-µF)betweenVIN/SWIN1andGNDandbetweenSWIN2andGNDarealsorecommended,
especially if load transients in the hundreds of milliamps with fast rise times are anticipated.
A 66-µF bulk capacitor is recommended from OUTx to ground, especially when the output load is heavy. This
precaution helps reduce transients seen on the power rails. Additionally, bypassing the outputs with a 0.1-µF
ceramic capacitor improves the immunity of the device to short-circuit transients.
LDO output capacitor requirements
Stabilizing the internal control loop requires an output capacitor connected between LDO_OUT and GND. The
minimum recommended capacitance is a 4.7 µF with an ESR value between 200 mΩ and 10 Ω. Solid tantalum
electrolytic, aluminum electrolytic and multilayer ceramic capacitors are all suitable, provided they meet the
ESR requirements.
The adjustable LDO (for voltages lower than 3 V) requires a bypass capacitor across the feedback resistor as
shown in Figure 18. The value of this capacitor is determined by using the following equation:
1
Cf
4 pf
3
(
)
3.14 R1
63.7e
2
(1)
where R1 is derived by programming the adjustable LDO (see programming the adjustable LDO regulator
section shown below).
15
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
APPLICATION INFORMATION
programming the adjustable LDO regulator
The output voltage of the TPS2145 adjustable regulator is programmed using an external resistor divider as
shown in Figure 18. The output voltage is calculated using:
R1
R2
LDO_OUT
Vref 1
(2)
where V = 0.8 V typical (internal reference voltage).
ref
Resistors R1 and R2 should be chosen for approximately 4-µA (minimum) divider current. Lower value resistors
can be used but offer no inherent advantage and waste more power. Higher values should be avoided as a
minimum load is required to sink the LDO forward leakage and maintain regulation. The recommended design
procedure is to choose R2 = 200 kΩ to set the divider current at 4-µA and then solve the LDO_OUT equation
for R1.
TPS2145
VIN/SWIN1 LDO_OUT
R1
C
0.1 µF
f
0.1 µF
10 µF
4.7 µF
LDO_EN
LDO_ADJ
R2
GND
Figure 18. External Resistor Divider
OUTPUT VOLTAGE PROGRAMMING GUIDE
OUTPUT VOLTAGE
R1
R2
Cfb
†
†
3.3
625 kΩ
550 kΩ
425 kΩ
250 kΩ
175 kΩ
50 kΩ
200 kΩ
200 kΩ
200 kΩ
200 kΩ
200 kΩ
200 kΩ
NR
NR
3.0
2.5
2 pf
6 pf
1.8
1.5
1.0
10.3 pf
46 pf
†
NR – Not required
overcurrent
A sense FET is used to measure current through the device. Unlike current-sense resistors, sense FETs do not
increase the series resistance of the current path. When an overcurrent condition is detected, the device
maintains a constant output current. Complete shutdown occurs only if the fault is present long enough to
activate thermal limiting.
Three possible overload conditions can occur. In the first condition, the output is shorted before the device is
enabled or before VIN has been applied. The TPS2145 and TPS2147 sense the short and immediately switch
to a constant-current output.
In the second condition, the short occurs while the device is enabled. At the instant the short occurs, very high
currents may flow for a very short time before the current-limit circuit can react. After the current-limit circuit has
tripped (reached the overcurrent trip threshold), the device switches into constant-current mode.
16
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
APPLICATION INFORMATION
overcurrent (continued)
In the third condition, the load has been gradually increased beyond the recommended operating current. The
current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is
exceeded. TheTPS2145andTPS2147arecapableofdeliveringcurrentuptothecurrent-limitthresholdwithout
damagingthedevice. Oncethethresholdhasbeenreached, thedeviceswitchesintoitsconstant-currentmode.
OC response
The OCx open-drain output is asserted (active low) when an overcurrent condition is encountered. The output
will remain asserted until the overcurrent condition is removed. Connecting a heavy capacitive load to an
enabled device can cause momentary false overcurrent reporting from the inrush current flowing through the
device, charging the downstream capacitor. The TPS2145 and TPS2147 are designed to reduce false
overcurrent reporting. An internal overcurrent transient filter eliminates the need for external components to
removeunwantedpulses. Usinglow-ESRelectrolyticcapacitorsonOUTxlowerstheinrushcurrentflowthrough
the device during hot-plug events by providing a low-impedance energy source, also reducing erroneous
overcurrent reporting.
power dissipation and junction temperature
The major source of power dissipation for the TPS2145 and TPS2147 comes from the internal voltage regulator
and the N-channel MOSFETs. Checking the power dissipation and junction temperature is always a good
design practice and it starts with determining the r
of the N-channel MOSFET according to the input
DS(on)
voltage and operating temperature. As an initial estimate, use the highest operating ambient temperature of
interest and read r from the graphs shown in the Typical Characteristics section of this data sheet. Using
DS(on)
this value, the power dissipation per switch can be calculated using:
2
P
r
I
D
DS(on)
(3)
(4)
Multiply this number by two to get the total power dissipation coming from the N-channel MOSFETs.
The power dissipation for the internal voltage regulator is calculated using:
P
V –V
I
D
I
O(min)
O
The total power dissipation for the device becomes:
P
P
2
P
D(total)
D(voltage regulator)
Finally, calculate the junction temperature:
D(switch)
(5)
(6)
T
P
R
T
J
D
JA
A
Where:
T = Ambient Temperature °C
A
R
= Thermal resistance °C/W, equal to inverting the derating factor found on the power dissipation table
θJA
in this data sheet.
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,
repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally
sufficient to get a reasonable answer.
17
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
APPLICATION INFORMATION
thermal protection
Thermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for
extended periods of time. The faults force the TPS2145 and TPS2147 into constant-current mode at first, which
causes the voltage across the high-side switch to increase; under short-circuit conditions, the voltage across
the switch is equal to the input voltage. The increased dissipation causes the junction temperature to rise to high
levels.
The protection circuit senses the junction temperature of the switch and shuts it off. Hysteresis is built into the
thermal sense circuit, and after the device has cooled approximately 10 degrees, the switch turns back on. The
switch continues to cycle in this manner until the load fault or input power is removed.
The TPS2145 and TPS2147 implement a dual thermal trip to allow fully independent operation of the power
distribution switches. In an overcurrent or short-circuit condition, the junction temperature will rise. Once the die
temperature rises to approximately 120°C, the internal thermal-sense circuitry checks to determine which
power switch is in an overcurrent condition and turns that power switch off, thus isolating the fault without
interrupting operation of the adjacent power switch. Should the die temperature exceed the first thermal trip
point of 120°C and reach 155°C, the device will turn off.
undervoltage lockout (UVLO)
An undervoltage lockout ensures that the device (LDO and switches) is in the off state at power up. The UVLO
will also keep the device from being turned on until the power supply has reached the start threshold (see
undervoltage lockout table), even if the switches are enabled. The UVLO will also be activated whenever the
input voltage falls below the stop threshold as defined in the undervoltage lockout table. This function facilitates
the design of hot-insertion systems where it is not possible to turn off the power switches before input power
is removed. Upon reinsertion, the power switches will be turned on with a controlled rise time to reduce EMI and
voltage overshoots.
universal serial bus (USB) applications
The universal serial bus (USB) interface is a multiplexed serial bus operating at either 12-Mb/s, or 1.5-Mb/s for
USB 1.1, or 480 Mb/s for USB 2.0. The USB interface is designed to accommodate the bandwidth required by
PC peripherals such as keyboards, printers, scanners, and mice. The four-wire USB interface was conceived
for dynamic attach-detach (hot plug-unplug) of peripherals. Two lines are provided for differential data, and two
lines are provided for 5-V power distribution.
USB data is a 3.3-V level signal, but power is distributed at 5 V to allow for voltage drops in cases where power
is distributed through more than one hub across long cables. Each function must provide its own regulated 3.3-V
from the 5-V input or its own internal power supply.
The USB specification defines the following five classes of devices, each differentiated by power-consumption
requirements:
Hosts/self-powered hubs (SPH)
Bus-powered hubs (BPH)
Low-power, bus-powered functions
High-power, bus-powered functions
Self-powered functions
The TPS2145 and TPS2147 are well suited for USB hub and peripheral applications. The internal LDO can be
used to provide the 3.3-V power needed by the controller while the dual switches distribute power to the
downstream functions.
18
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
APPLICATION INFORMATION
USB power-distribution requirements
USB can be implemented in several ways, and, regardless of the type of USB device being developed, several
power-distribution features must be implemented.
Hosts/self-powered hubs must:
–
–
Current-limit downstream ports
Report overcurrent conditions on USB V
BUS
Bus-powered hubs must:
–
–
–
Enable/disable power to downstream ports
Power up at <100 mA
Limit inrush current (<44 Ω and 10 µF)
Functions must:
–
–
Limit inrush currents
Power up at <100 mA
The feature set of the TPS2145 and TPS2147 allows them to meet each of these requirements. The integrated
current-limiting and overcurrent reporting is required by hosts and self-powered hubs. The logic-level enable
and controlled rise times meet the need of both input and output ports on bus-powered hubs, as well as the input
ports for bus-powered functions.
USB applications
Figure 19 shows the TPS2147 being used in a USB bus-powered/self-powered peripheral design. The internal
3.3-V LDO is used to provide power for the USB function controller as well as to the 1.5-kΩ pullup resistor.
In bus-powered mode, switch 1 provides power to the 5-V circuitry. In self-powered mode, switch 2 provides
power to the 5-V circuitry while the USB 5-V still provides power to the 3.3-V LDO (USB allows self-powered
devices to draw up to 100 mA from V
).
BUS
19
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
APPLICATION INFORMATION
1.5 kΩ
D+
USB
D–
Function
Controller
TPS2147
GND
LDO_OUT
VIN/SW1
3.3 V
LDO
5 V
4.7 µF
0.1 µF
10 µF
0.1 µF
OC1
OUT1
EN1
External
5-V
Supply
SW2
OUT2
5-V
Circuitry
4.7 µF
0.1 µF
EN2
OC2
Figure 19. TPS2147 USB Bus-Powered/Self-Powered Peripheral Application
DSP applications
Figure 20 shows the TPS2145 in a DSP application. DSPs use a 1.8-V core voltage and a 3.3-V I/O voltage.
In this type of application, the TPS2145 adjustable LDO is configured for a 1.8-V output specifically for the DSP
core voltage.
The additional 3.3-V circuitry is powered through switch 1 of the TPS2145 only after the DSP is up and running.
Switch 2 is used to provide power to additional circuitry operating from a different voltage source. This switch
is also controlled by the DSP.
Figures 21 thru 23 show the TPS2145 in various DSP applications using a supply voltage supervisor (SVS) chip
to control the enable for the 3.3 V powering up the DSP I/O circuitry.
20
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
APPLICATION INFORMATION
4.7 µF
0.1 µF
DSP
TPS2145
1.8 V
VIN/SW1
LDO_EN
ADJ
LDO
3.3 V
5 V
External
Supply
10 µF
0.1 µF
OC1
Additional
3.3-V
Circuitry
OUT1
EN1
SW2
5-V
OUT2
Circuitry
4.7 µF
0.1 µF
EN2
OC2
Figure 20. TPS2145 DSP Application
TPS2145
1.8 V
External
3.3-V
Supply
VIN/SW1
0.1 µF
ADJ
LDO
4.7 µF
10 µF
0.1 µF
DSP
LDO_EN
OC1
OUT1
OUT2
EN1
SVS
Additional
3.3-V
SW2
Circuitry
EN2
OC2
Figure 21. TPS2145 DSP With SVS Application
21
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
APPLICATION INFORMATION
TPS2145
1.8 V
External
3.3-V
Supply
VIN/SW1
0.1 µF
ADJ
LDO
4.7 µF
10 µF
0.1 µF
DSP
LDO_EN
SVS
EN1
OUT1
OC1
Additional
3.3-V
SW2
OUT2
Circuitry
EN2
OC2
Figure 22. TPS2145 DSP With SVS Application
TPS2145
1.8 V
External
3.3-V
Supply
VIN/SW1
0.1 µF
ADJ
LDO
4.7 µF
10 µF
0.1 µF
DSP
LDO_EN
OC1
OUT1
OUT2
EN1
Dual
SVS
Additional
3.3-V
SW2
Circuitry
EN2
OC2
Figure 23. TPS2145 DSP With Dual SVS Application
22
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
APPLICATION INFORMATION
power supply sequencing
DSPs typically do not require specific power sequencing between the core supply and the I/O supply. However,
systems should be designed to ensure that neither supply is powered up for extended periods of time if the other
supply is below the proper operating voltage.
system level design consideration
System level design considerations, such as bus contention, may require supply sequencing to be
implemented. In this case, the core supply should be powered up at the same time as, or prior to (and powered
down after), the I/O buffers. This is to ensure that the I/O buffers receive valid inputs from the core before the
output buffers are powered up, thus, preventing bus contention with other chips on the board.
power supply design consideration
For some DSP systems, the core supply may be required to provide a considerable amount of current until the
I/O supply is powered up. This extra current condition is a result of uninitialized logic within the DSP(s).
Decreasing the amount of time between the core supply power up and the I/O supply power up can minimize
the effects of this current draw.
23
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
MECHANICAL DATA
PWP ( R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE
20 PINS SHOWN
0,30
0,19
0,65
20
M
0,10
11
Thermal Pad
(See Note D)
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
1
10
0,25
A
0°–8°
0,75
0,50
Seating Plane
0,10
0,15
0,05
1,20 MAX
PINS **
14
16
20
24
28
DIM
5,10
4,90
5,10
4,90
6,60
6,40
7,90
7,70
9,80
9,60
A MAX
A MIN
4073225/F 10/98
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusions.
D. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane.
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.
E. Falls within JEDEC MO-153
PowerPAD is a trademark of Texas Instruments.
24
www.ti.com
TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 – AUGUST 2001
MECHANICAL DATA
DGQ (S-PDSO-G10)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
0,27
0,17
M
0,50
10
0,25
6
Thermal Pad
(See Note D)
0,15 NOM
3,05
2,95
4,98
4,78
Gage Plane
0,25
0°–6°
1
5
0,69
0,41
3,05
2,95
Seating Plane
0,10
0,15
0,05
1,07 MAX
4073273/A 04/98
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion.
D. Thepackagethermalperformancemaybeenhancedbybondingthethermalpadtoanexternalthermalplane.Thispadiselectrically
and thermally connected to the backside of the die and possibly selected leads.
PowerPAD is a trademark of Texas Instruments Incorporated.
25
www.ti.com
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its products to the specifications applicable at the time of sale in accordance with
TI’sstandardwarranty. TestingandotherqualitycontroltechniquesareutilizedtotheextentTIdeemsnecessary
to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except
those mandated by government requirements.
Customers are responsible for their applications using TI components.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
products or services might be or are used. TI’s publication of information regarding any third party’s products
or services does not constitute TI’s approval, license, warranty or endorsement thereof.
Reproduction of information in TI data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations and notices. Representation
or reproduction of this information with alteration voids all warranties provided for an associated TI product or
service, is an unfair and deceptive business practice, and TI is not responsible nor liable for any such use.
Resale of TI’s products or services with statements different from or beyond the parameters stated by TI for
that product or service voids all express and any implied warranties for the associated TI product or service,
is an unfair and deceptive business practice, and TI is not responsible nor liable for any such use.
Also see: Standard Terms and Conditions of Sale for Semiconductor Products. www.ti.com/sc/docs/stdterms.htm
Mailing Address:
Texas Instruments
Post Office Box 655303
Dallas, Texas 75265
Copyright 2001, Texas Instruments Incorporated
相关型号：
©2020 ICPDF网 联系我们和版权申明