TSD1N60 [ETC]
; - 12号的铝制车身绘（ RAL 7032 ）
ETC 
TSD1N60/TSU1N60
600V N-Channel MOSFET
Features
■ 1.0A,600v,RDS(on)=11.5Ω@VGS=10V
■ Gate charge (Typical 7.0nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced
planar stripe, DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics, such as fast switching time,low
on resistance.low gate charge and especially excellent avalanche
characteristics.This power MOSFET is usually used at AC adaptors,
on the battery charger and SMPS.
Absolute Maximum Ratings
Symbol
Parameter
TSD1N60 TSU1N60
Units
VDSS
Drain to Source Voltage
600
V
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
1.0
0.65
4.0
1.0*
0.65*
4.0*
A
A
ID
IDM
VGS
EAS
EAR
dv/dt
Drain Current Pulsed
(Note 1)
A
Gate to Source Voltage
±30
52
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
V/ns
3.0
4.5
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
30
30
W
PD
0.23
0.23
W/ °C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
-55 ~ 150
300
°C
°C
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ
Thermal Resistance, Junction-to-Ambient
TSD1N60
TSU1N60
Units
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
4.2
50
4.2
50
110
110
1/9
TSD1N60/TSU1N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
600
-
V
VGS = 0V, ID = 250uA
-
-
-
Δ BVDSS
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
0.4
V/°C
1
uA
uA
nA
nA
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
-
-
-
-
-
-
-
-
IDSS
IGSS
Drain-Source Leakage Current
10
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
100
-100
On Characteristics
VGS(th)
Gate Threshold Voltage
2.0
-
4.0
V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 0.5A
-
Static Drain-Source On-state Resis-
tance
RDS(ON)
8.5
11.5
Ω
Dynamic Characteristics
Ciss
Input Capacitance
174
340
-
-
-
Coss
Crss
Output Capacitance
185
80
370
160
VGS =0 V, VDS =25V, f = 1MHz
pF
Reverse Transfer Capacitance
Dynamic Characteristics
Turn-on Delay Time
td(on)
15
75
30
35
7.0
1.0
3
35
140
60
60
9
-
-
-
-
-
-
Rise Time
tr
VDD =300V, ID =1A, RG =25Ω
(Note 4, 5)
ns
Turn-off Delay Time
td(off)
Fall Time
tf
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS =480V, VGS =10V, ID =1.0A
(Note 4, 5)
-
-
nC
Gate-Drain Charge(Miller Charge)
-
Qgd
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =1.0A, VGS =0V
Min.
Typ.
Max.
1.0
Unit.
-
-
-
-
-
-
A
ISM
4.0
VSD
1.4
V
trr
Reverse Recovery Time
Reverse Recovery Charge
-
-
420
-
-
ns
uC
Qrr
IS=1.0A, VGS=0V, dIF/dt=100A/us
0.42
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L =95mH, IAS =1.0A, VDD = 50V, RG = 50Ω , Starting TJ = 25°C
3. ISD ≤1.0A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
2/9
TSD1N60/TSU1N60
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TSD1N60/TSU1N60
4/9
TSD1N60/TSU1N60
5/9
TSD1N60/TSU1N60
6/9
TSD1N60/TSU1N60
7/9
TSD1N60/TSU1N60
Package Dimensions
8/9
TSD1N60/TSU1N60
Package Dimensions
9/9
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