UN921CJ [ETC]

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 ; 晶体管| 50V V( BR ) CEO | 100MA I(C ) | SOT- 416\n
UN921CJ
型号: UN921CJ
厂家: ETC    ETC
描述:

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
晶体管| 50V V( BR ) CEO | 100MA I(C ) | SOT- 416\n

晶体 晶体管
文件: 总16页 (文件大小:258K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Transistors with built-in Resistor  
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
(UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/921E/921F/  
921K/921L/921M/921N/921AJ/921BJ/921CJ)  
Unit: mm  
1.6 0.15  
Silicon NPN epitaxial planer transistor  
0.4  
0.8 0.1  
0.4  
For digital circuits  
1
Features  
I
G
3
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
2
G
SS-Mini type package, allowing automatic insertion through tape  
packing and magazine packing.  
Resistance by Part Number  
I
0.2 0.1  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
47kΩ  
47kΩ  
100kΩ  
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR9211  
UNR9212  
UNR9213  
UNR9214  
UNR9215  
UNR9216  
UNR9217  
UNR9218  
UNR9219  
UNR9210  
UNR921D  
UNR921E  
UNR921F  
UNR921K  
UNR921L  
UNR921M  
UNR921N  
UNR921AJ  
UNR921BJ  
UNR921CJ  
8A  
8B  
8C  
8D  
8E  
8F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
100kΩ  
100kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
SS–Mini Type Pakage  
Unit: mm  
1.60 0.05  
0.80 0.80 0.05  
0.425 0.425  
8H  
8I  
8K  
8L  
8M  
8N  
8O  
8P  
8Q  
EL  
EX  
8X  
8Y  
8Z  
0.85+00..0035  
1 : Base  
2 : Emitter  
47kΩ  
3 : Collector  
SS–Mini Flat Type Pakage (J type)  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
Internal Connection  
V
100  
mA  
mW  
˚C  
C
E
R1  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
125  
B
Tj  
125  
R2  
Tstg  
–55 to +125  
˚C  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
ICBO  
Conditions  
VCB = 50V, IE = 0  
VCE = 50V, IB = 0  
min  
typ  
max  
0.1  
0.5  
0.5  
0.2  
0.1  
0.01  
1.0  
1.5  
2.0  
Unit  
µA  
Collector cutoff current  
ICEO  
µA  
UNR9211  
UNR9212/9214/921E/921D  
UNR9213/UNR921M/921N/UNR921AJ  
Emitter  
cutoff  
current  
UNR9215/9216/9217/9210/UNR921BJ IEBO  
UNR921F/921K  
VEB = 6V, IC = 0  
mA  
UNR9219  
UNR9218/921L/UNR921CJ  
Collector to base voltage  
Collector to emitter voltage  
UNR9211  
VCBO  
VCEO  
IC = 10µA, IE = 0  
50  
50  
35  
60  
80  
160  
30  
20  
80  
V
V
IC = 2mA, IB = 0  
UNR9212/921E  
Forward  
current  
transfer  
ratio  
UNR9213/9214/921M/UNR921AJ/921CJ  
UNR9215*/9216*/9217*/9210*/UNR921BJ hFE  
VCE = 10V, IC = 5mA  
460  
UNR921F/921D/9219  
UNR9218/921K/921L  
UNR921N  
400  
Collector to emitter saturation voltage VCE(sat)  
IC = 10mA, IB = 0.3mA  
0.25  
V
V
Output voltage high level  
Output voltage low level  
VOH  
VOL  
fT  
VCC = 5V, VB = 0.5V, RL = 1kΩ  
VCC = 5V, VB = 2.5V, RL = 1kΩ  
VOC = 5V, VB = 3.5V, R1 = 1kΩ  
VCC = 5V, VB = 10V, R1 = 1kΩ  
VCC = 5V, VB = 6V, RL = 1kΩ  
VCC = 5V, VB = 5V, RL = 1kΩ  
VCB = 10V, IE = –2mA, f = 200MHz  
4.9  
0.2  
0.2  
0.2  
0.2  
0.2  
UNR9213/921K/UNR921BJ  
UNR921D  
UNR921E  
V
UNR921AJ  
Transition frequency  
150  
10  
MHz  
UNR9211/9214/9215/921K  
UNR9212/9217  
22  
UNR9213/921D/921E/9210  
47  
Input  
resis-  
tance  
UNR9216/921F/921L/UNR921N R1  
UNR9218  
(–30%)  
4.7  
0.51  
1
(+30%)  
kΩ  
UN9219/UNR921M  
UNR921AJ/921BJ  
100  
* hFE rank classification (UNR9215/9216/9217/9210)  
Rank  
hFE  
Q
R
S
160 to 260  
210 to 340  
290 to 460  
2
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Electrical Characteristics (continued) (Ta=25˚C)  
I
Parameter  
UNR9211/9212/9213/921L  
UNR9214  
Symbol  
Conditions  
min  
0.8  
typ  
1.0  
max  
1.2  
Unit  
0.17  
0.08  
0.21  
0.1  
0.25  
0.12  
UNR9218/9219  
UNR921D  
4.7  
Resis-  
tance  
ratio  
UNR921E  
2.14  
0. 47  
2.13  
0.047  
0.1  
R1/R2  
UNR921F  
UNR921K  
UNR921M  
UNR921N  
UNR921AJ  
1.0  
Resistance between Emitter to Base  
UNR921CJ R2  
–30%  
47  
30%  
kΩ  
3
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Common characteristics chart  
PT — Ta  
150  
125  
100  
75  
50  
25  
0
0
20 40 60 80 100 120 140 160  
(
)
Ambient temperature Ta ˚C  
Characteristics charts of UNR9211  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
160  
140  
120  
100  
80  
400  
300  
200  
100  
0
100  
IC/IB=10  
Ta=25˚C  
VCE=10V  
IB=1.0mA  
0.9mA  
30  
10  
0.8mA  
0.7mA  
0.6mA  
0.5mA  
Ta=75˚C  
0.4mA  
0.3mA  
3
1
60  
25˚C  
0.3  
0.1  
25˚C  
Ta=75˚C  
0.2mA  
25˚C  
40  
25˚C  
20  
0.03  
0.01  
0.1mA  
10  
0
0
2
4
6
8
12  
1
3
10  
30  
100 300 1000  
0.1 0.3  
1
3
10  
30  
100  
(
)
Collector to emitter voltage VCE  
V
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
10000  
100  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.1 0.3  
1
3
10  
30  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
(
)
( )  
Input voltage VIN V  
Collector to base voltage VCB  
V
(
)
Output current IO mA  
4
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Characteristics charts of UNR9212  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
160  
140  
120  
100  
80  
100  
400  
300  
200  
100  
0
IC/IB=10  
VCE=10V  
Ta=25˚C  
30  
10  
IB=1.0mA  
0.9mA  
0.7mA  
0.6mA  
0.5mA  
0.8mA  
Ta=75˚C  
3
1
0.4mA  
0.3mA  
0.2mA  
25˚C  
60  
0.3  
0.1  
25˚C  
Ta=75˚C  
25˚C  
40  
25˚C  
20  
0.03  
0.01  
0.1mA  
0
0
2
4
6
8
10  
12  
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
(
)
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
Collector current IC mA  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
100  
10000  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.1 0.3  
1
3
10  
30  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
(
)
(
)
(
)
Collector to base voltage VCB  
V
Input voltage VIN  
V
Output current IO mA  
Characteristics charts of UNR9213  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
100  
400  
350  
300  
250  
200  
150  
100  
50  
160  
140  
120  
100  
80  
IC/IB=10  
VCE=10V  
Ta=25˚C  
IB=1.0mA  
30  
0.9mA  
0.8mA  
0.7mA  
0.6mA  
Ta=75˚C  
25˚C  
10  
0.5mA  
0.4mA  
0.3mA  
3
1
25˚C  
60  
0.3  
0.1  
Ta=75˚C  
25˚C  
0.2mA  
0.1mA  
10  
40  
25˚C  
20  
0.03  
0.01  
0
0
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
0
2
4
6
8
12  
( )  
Collector current IC mA  
(
)
(
)
Collector current IC mA  
Collector to emitter voltage VCE  
V
5
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Cob — VCB  
IO — VIN  
VIN — IO  
100  
6
5
4
3
2
1
0
10000  
VO=0.2V  
Ta=25˚C  
VO=5V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
30  
10  
3000  
1000  
3
1
300  
100  
0.3  
0.1  
30  
10  
0.03  
0.01  
3
1
0.1 0.3  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
(
)
(
)
( )  
V
Output current IO mA  
Collector to base voltage VCB  
V
Input voltage VIN  
Characteristics charts of UNR9214  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
400  
350  
300  
250  
200  
150  
100  
50  
160  
140  
120  
100  
80  
100  
IC/IB=10  
VCE=10V  
Ta=25˚C  
30  
IB=1.0mA  
0.9mA  
0.8mA  
0.7mA  
0.6mA  
10  
3
1
0.5mA  
0.4mA  
Ta=75˚C  
25˚C  
0.3mA  
0.2mA  
0.1mA  
60  
0.3  
0.1  
Ta=75˚C  
25˚C  
25˚C  
40  
20  
0.03  
0.01  
25˚C  
0
0
100 300 1000  
0
2
4
6
8
10  
12  
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
(
)
(
)
Collector current IC mA  
(
)
Collector current IC mA  
Collector to emitter voltage VCE  
V
Cob — VCB  
IO — VIN  
VIN — IO  
10000  
100  
6
5
4
3
2
1
0
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
100  
(
)
(
)
(
)
V
Input voltage VIN  
V
Output current IO mA  
Collector to base voltage VCB  
6
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Characteristics charts of UNR9215  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
100  
400  
350  
300  
250  
200  
150  
100  
50  
160  
140  
120  
100  
80  
IC/IB=10  
VCE=10V  
Ta=25˚C  
IB=1.0mA  
0.9mA  
30  
10  
0.8mA  
0.7mA  
0.6mA  
0.5mA  
Ta=75˚C  
3
1
0.4mA  
25˚C  
0.3mA  
0.2mA  
0.1mA  
60  
0.3  
0.1  
25˚C  
Ta=75˚C  
25˚C  
40  
20  
0.03  
0.01  
25˚C  
0
0
1
3
10  
30  
100 300 1000  
0.1 0.3  
1
3
10  
30  
100  
0
2
4
6
8
10  
12  
(
)
(
)
(
)
V
Collector current IC mA  
Collector current IC mA  
Collector to emitter voltage VCE  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
10000  
100  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.1 0.3  
1
3
10  
30  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
(
)
(
)
(
)
Collector to base voltage VCB  
V
Input voltage VIN  
V
Output current IO mA  
Characteristics charts of UNR9216  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
100  
400  
350  
300  
250  
200  
150  
100  
50  
160  
140  
120  
100  
80  
IC/IB=10  
VCE=10V  
Ta=25˚C  
30  
IB=1.0mA  
Ta=75˚C  
25˚C  
0.9mA  
10  
0.8mA  
0.7mA  
0.6mA  
3
1
0.5mA  
0.4mA  
25˚C  
0.3mA  
0.2mA  
60  
0.3  
0.1  
Ta=75˚C  
25˚C  
40  
20  
0.03  
0.01  
0.1mA  
25˚C  
0
0
0
2
4
6
8
10  
12  
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
(
)
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
Collector current IC mA  
7
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Cob — VCB  
IO — VIN  
VIN — IO  
100  
6
5
4
3
2
1
0
10000  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.1 0.3  
30  
100  
0.1 0.3  
1
3
10  
30  
(
100  
)
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1
3
10  
( )  
V
(
)
Output current IO mA  
Collector to base voltage VCB  
V
Input voltage VIN  
Characteristics charts of UNR9217  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
120  
100  
80  
60  
40  
20  
0
100  
400  
350  
300  
250  
200  
150  
100  
50  
IC/IB=10  
Ta=25˚C  
VCE=10V  
IB=1.0mA  
0.9mA  
0.8mA  
0.7mA  
0.6mA  
0.5mA  
30  
10  
3
1
0.4mA  
0.3mA  
0.2mA  
Ta=75˚C  
Ta=75˚C  
25˚C  
0.3  
0.1  
25˚C  
25˚C  
0.1mA  
0.03  
0.01  
25˚C  
0
0
2
4
6
8
10  
12  
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
(
)
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
Collector current IC mA  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
10000  
100  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.1 0.3  
1
3
10  
30  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
(
)
( )  
V
(
)
Collector to base voltage VCB  
V
Input voltage VIN  
Output current IO mA  
8
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Characteristics charts of UNR9218  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
240  
200  
160  
120  
80  
100  
160  
120  
80  
IC/IB=10  
Ta=25˚C  
VCE=10V  
30  
10  
IB=1.0mA  
0.9mA  
0.8mA  
0.7mA  
3
1
Ta=75˚C  
Ta=75˚C  
0.6mA  
0.5mA  
0.4mA  
25˚C  
0.3  
0.1  
25˚C  
25˚C  
40  
0.3mA  
0.2mA  
0.1mA  
40  
0.03  
0.01  
25˚C  
0
0
0
2
4
6
8
10  
12  
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
(
)
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
Collector current IC mA  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
10000  
100  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.1 0.3  
1
3
10  
30  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
(
)
(
)
(
)
Collector to base voltage VCB  
V
Input voltage VIN  
V
Output current IO mA  
Characteristics charts of UNR9219  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
100  
160  
120  
80  
240  
200  
160  
120  
80  
IC/IB=10  
Ta=25˚C  
VCE=10V  
30  
IB=1.0mA  
0.9mA  
0.8mA  
0.7mA  
0.6mA  
10  
3
1
Ta=75˚C  
25˚C  
25˚C  
Ta=75˚C  
0.3  
0.1  
0.5mA  
0.4mA  
25˚C  
0.3mA  
40  
40  
0.2mA  
0.1mA  
0.03  
0.01  
25˚C  
0
0
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
0
2
4
6
8
10  
12  
(
)
( )  
Collector current IC mA  
(
)
Collector current IC mA  
Collector to emitter voltage VCE  
V
9
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Cob — VCB  
IO — VIN  
VIN — IO  
10000  
100  
6
5
4
3
2
1
0
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
(
100  
)
( )  
V
(
)
Input voltage VIN  
Output current IO mA  
Collector to base voltage VCB  
V
Characteristics charts of UNR9210  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
60  
50  
40  
30  
20  
10  
0
100  
400  
350  
300  
250  
200  
150  
100  
50  
IC/IB=10  
IB=1.0mA  
0.9mA  
0.8mA  
Ta=25˚C  
VCE=10V  
30  
10  
Ta=75˚C  
3
1
0.4mA  
0.5mA  
25˚C  
0.3mA  
0.6mA  
0.7mA  
Ta=75˚C  
25˚C  
0.3  
0.1  
0.1mA  
25˚C  
0.03  
0.01  
25˚C  
0
0
2
4
6
8
10  
12  
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
(
)
Collector to emitter voltage VCE  
V
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
10000  
100  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.1 0.3  
1
3
10  
30  
(
100  
)
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
(
)
(
)
Collector to base voltage VCB  
V
Input voltage VIN  
V
Output current IO mA  
10  
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Characteristics charts of UNR921D  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
30  
25  
20  
15  
10  
5
100  
160  
120  
80  
IC/IB=10  
Ta=25˚C  
VCE=10V  
0.9mA  
0.8mA  
0.7mA  
0.6mA  
Ta=75˚C  
0.5mA  
0.4mA  
0.3mA  
30  
10  
25˚C  
25˚C  
IB=1.0mA  
3
1
0.2mA  
0.1mA  
0.3  
0.1  
Ta=75˚C  
25˚C  
40  
25˚C  
0.03  
0.01  
0
0
0
2
4
6
8
10  
12  
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
(
)
Collector to emitter voltage VCE  
V
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
10000  
100  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
3000  
1000  
30  
10  
300  
100  
3
1
30  
10  
0.3  
0.1  
3
1
0.03  
0.01  
0.1 0.3  
1
3
10  
30  
100  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.1 0.3  
1
3
10  
30  
100  
(
)
(
)
(
)
Collector to base voltage VCB  
V
Input voltage VIN  
V
Output current IO mA  
Characteristics charts of UNR921E  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
100  
160  
120  
80  
60  
50  
40  
30  
20  
10  
0
IB=1.0mA  
0.9mA  
IC/IB=10  
0.7mA  
Ta=25˚C  
VCE=10V  
0.6mA  
0.8mA  
30  
Ta=75˚C  
10  
25˚C  
3
1
25˚C  
0.2mA  
0.1mA  
0.3mA  
0.4mA  
0.5mA  
Ta=75˚C  
0.3  
0.1  
25˚C  
40  
0.03  
0.01  
25˚C  
0
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100 300 1000  
0
2
4
6
8
10  
12  
(
)
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Collector to emitter voltage VCE  
V
11  
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
100  
10000  
VO=0.2V  
Ta=25˚C  
VO=5V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
30  
10  
3000  
1000  
3
1
300  
100  
0.3  
0.1  
30  
10  
0.03  
0.01  
3
1
0.1 0.3  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
100  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
(
)
(
)
Collector to base voltage VCB  
V
(
)
V
Output current IO mA  
Input voltage VIN  
Characteristics charts of UNR921F  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
160  
120  
80  
240  
200  
160  
120  
80  
100  
IC/IB=10  
Ta=25˚C  
VCE=10V  
30  
10  
0.9mA  
0.8mA  
0.7mA  
0.6mA  
3
1
Ta=75˚C  
Ta=75˚C  
25˚C  
25˚C  
IB=1.0mA  
0.3  
0.1  
0.5mA  
0.4mA  
0.3mA  
25˚C  
40  
40  
0.03  
0.01  
0.2mA  
0.1mA  
25˚C  
0
0
1
3
10  
30  
100 300 1000  
0
2
4
6
8
10  
12  
0.1 0.3  
1
3
10  
30  
100  
(
)
(
)
(
)
Collector current IC mA  
Collector to emitter voltage VCE  
V
Collector current IC mA  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
100  
10000  
VO=0.2V  
Ta=25˚C  
VO=5V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
30  
10  
3000  
1000  
3
1
300  
100  
0.3  
0.1  
30  
10  
0.03  
0.01  
3
1
0.1 0.3  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
(
)
Collector to base voltage VCB  
V
(
)
(
)
V
Output current IO mA  
Input voltage VIN  
12  
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Characteristics charts of UNR921K  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
240  
200  
160  
120  
80  
100  
240  
200  
160  
120  
80  
IC/IB=10  
Ta=25˚C  
VCE=10V  
10  
1
Ta=75˚C  
25˚C  
IB=1.2mA  
1.0mA  
0.8mA  
0.6mA  
Ta=75˚C  
25˚C  
25˚C  
0.1  
0.01  
0.4mA  
0.2mA  
25˚C  
40  
40  
0
0
0
2
4
6
8
10  
12  
1
3
10  
30  
100 300 1000  
1
3
10  
30  
100 300 1000  
(
)
Collector to emitter voltage VCE  
V
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Cob — VCB  
VIN — IO  
6
5
4
3
2
1
0
100  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
30  
10  
3
1
0.3  
0.1  
0.03  
0.01  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
100  
(
)
Collector to base voltage VCB  
V
(
)
Output current IO mA  
Characteristics charts of UNR921L  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
240  
200  
160  
120  
80  
100  
240  
200  
160  
120  
80  
IC/IB=10  
Ta=25˚C  
VCE=10V  
10  
1
Ta=75˚C  
IB=1.0mA  
0.8mA  
25˚C  
0.6mA  
25˚C  
Ta=75˚C  
25˚C  
0.4mA  
0.1  
0.01  
40  
40  
25˚C  
0.2mA  
0
0
0
2
4
6
8
10  
12  
1
3
10  
30  
100 300 1000  
1
3
10  
30  
100 300 1000  
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
(
)
Collector current IC mA  
13  
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
Transistors with built-in Resistor  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Cob — VCB  
IO — VIN  
100  
10  
6
5
4
3
2
1
0
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
1
0.1  
0.01  
0.1 0.3  
1
3
10  
30  
100  
1
3
10  
30  
100  
(
)
(
)
V
Output current IO mA  
Collector to base voltage VCB  
Characteristics charts of UNR921M  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
10  
500  
400  
300  
200  
100  
0
240  
200  
160  
120  
80  
IC/IB=10  
Ta=25˚C  
VCE=10V  
3
1
IB=1.0mA  
0.9mA  
0.8mA  
0.7mA  
0.3  
0.1  
Ta=75˚C  
Ta=75˚C  
25˚C  
0.6mA  
0.5mA  
0.4mA  
0.3mA  
25˚C  
0.03  
0.01  
25˚C  
0.2mA  
0.1mA  
25˚C  
40  
0.003  
0.001  
0
1
3
10  
30  
100 300 1000  
1
3
10  
30  
100 300 1000  
0
2
4
6
8
10  
12  
(
)
(
)
Collector current IC mA  
Collector current IC mA  
(
)
V
Collector to emitter voltage VCE  
Cob — VCB  
IO — VIN  
VIN — IO  
104  
103  
102  
101  
1
100  
5
4
3
2
1
0
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
30  
10  
3
1
0.3  
0.1  
0.03  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1 0.3  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
(
100  
)
(
)
(
)
Input voltage VIN  
V
Output current IO mA  
Collector to base voltage VCB  
V
14  
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/  
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ  
Transistors with built-in Resistor  
Characteristics charts of UNR921N  
IC — VCE  
VCE(sat) — IC  
hFE — IC  
160  
140  
120  
100  
80  
10  
480  
400  
320  
240  
160  
80  
IC/IB=10  
VCE=10V  
Ta=25˚C  
IB=1.0mA  
0.9mA  
0.8mA  
0.7mA  
0.6mA  
0.5mA  
Ta=75˚C  
25˚C  
1
0.4mA  
25˚C  
0.3mA  
60  
Ta=75˚C  
0.2mA  
0.1mA  
0.1  
25˚C  
40  
20  
25˚C  
0.01  
0
0
1
10  
100  
1000  
1
10  
100  
1000  
0
2
4
6
8
10  
12  
(
)
(
)
(
)
V
Collector current IC mA  
Collector current IC mA  
Collector to emitter voltage VCE  
Cob — VCB  
IO — VIN  
VIN — IO  
6
5
4
3
2
1
0
10000  
1000  
100  
10  
100  
VO=5V  
Ta=25˚C  
VO=0.2V  
Ta=25˚C  
f=1MHz  
IE=0  
Ta=25˚C  
10  
1
0.1  
0.01  
1
0.4  
1
10  
100  
0.6  
0.8  
1
1.2  
1.4  
0.1  
1
10  
100  
(
)
( )  
V
(
)
Collector to base voltage VCB  
V
Input voltage VIN  
Output current IO mA  
15  
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-  
ment if any of the products or technologies described in this material and controlled under the  
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative character-  
istics and applied circuit examples of the products. It does not constitute the warranting of industrial  
property, the granting of relative rights, or the granting of any license.  
(3) The products described in this material are intended to be used for standard applications or gen-  
eral electronic equipment (such as office equipment, communications equipment, measuring in-  
struments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this material are subject to change without  
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-  
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2001 MAR  

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