UNR4115R [ETC]
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK ; 晶体管| 50V V（ BR ） CEO | 100MA I（C ） | SPAK\n
| 型号： | UNR4115R |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK
|
| 文件： | 总14页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR4111/4112/4113/4114/4115/4116/4117/
4118/4119/4110/411D/411E/411F/411H/411L
(UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L)
Unit: mm
Silicon PNP epitaxial planer transistor
4.0±0.2
For digital circuits
Features
■
■
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
marking
■
New S type package, allowing supply with the radial taping.
1
2
3
1.27 1.27
Resistance by Part Number
■
2.54±0.15
(R1)
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
UNR4111
UNR4112
UNR4113
UNR4114
UNR4115
UNR4116
UNR4117
UNR4118
UNR4119
UNR4110
UNR411D
UNR411E
UNR411F
UNR411H
UNR411L
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
1 : Emitter
2 : Collector
3 : Base
New S Type Package
—
—
Internal Connection
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
–50
V
–100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
300
Tj
150
Tstg
–55 to +150
˚C
Note) The part numbers in the parenthesis show conventional part number.
1
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
min
typ
max
Unit
ICBO
– 0.1
µA
Collector cutoff current
ICEO
– 0.5
– 0.5
– 0.2
– 0.1
µA
UNR4111
UNR4112/4114/411E/411D
UNR4113
Emitter
cutoff
UNR4115/4116/4117/4110 IEBO
UNR411F/411H
VEB = –6V, IC
=
0
–
0.01mA
current
–1.0
–1.5
–2.0
UNR4119
UNR4118/411L
Collector to base voltage
Collector to emitter voltage
UNR4111
VCBO
VCEO
IC = –10µA, IE = 0
–50
–50
35
V
V
IC = –2mA, IB = 0
UNR4112/411E
60
Forward
current
transfer
ratio
UNR4113/4114
80
hFE
VCE = –10V, IC = –5mA
UNR4115*/4116*/4117*/4110*
160
30
460
UNR411F/411D/4119/411H
UNR4118/411L
20
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
V
V
Output voltage high level
Output voltage low level
VOH
VOL
fT
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCC = –5V, VB = –3.5V, RL = 1kΩ
VCC = –5V, VB = –10V, RL = 1kΩ
VCC = 5V, VB = –6V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
UNR4113
UNR411D
UNR411E
V
Transition frequency
80
10
MHz
UNR4111/4114/4115
UNR4112/4117
22
UNR4113/4110/411D/411E
UNR4116/411F/411L
UNR4118
47
Input
resis-
tance
R1
(–30%)
4.7
0.51
1
(+30%)
kΩ
UNR4119
UNR411H
2.2
1.0
0.21
0.1
4.7
2.14
0.47
0.22
UNR4111/4112/4113/411L
UNR4114
0.8
0.17
0.08
3.7
1.2
0.25
0.12
5.7
UNR4118/4119
UNR411D
Resis-
tance
ratio
R1/R2
UNR411E
1.7
2.6
UNR411F
0.37
0.17
0.57
0.27
UNR411H
* hFE rank classification (UNR4115/4116/4117/4110)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Common characteristics chart
PT — Ta
400
300
200
100
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of UNR4111
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
160
120
80
40
0
–100
IC/IB=10
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–0.9mA
IB=–1.0mA
–30
–10
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–25˚C
–3
–1
–0.4mA
–0.3mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.2mA
–25˚C
–0.03
–0.01
–0.1mA
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
Collector to emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–
3
–0.03
–0.01
0
–1
–0.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
3
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Characteristics charts of UNR4112
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–30
–10
–0.6mA
–3
–1
–0.5mA
–0.4mA
Ta=75˚C
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
–25˚C
Ta=75˚C
25˚C
–25˚C
–0.1mA
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
V
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–3
–1
–0.03
–0.01
–0.1 –0.3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR4113
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
IC/IB=10
IB=–1.0mA
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–30
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–10
–0.5mA
–3
–1
–0.4mA
–0.3mA
–25˚C
–0.3
–0.1
Ta=75˚C
25˚C
–0.2mA
–0.1mA
–25˚C
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
( )
Collector current IC mA
(
V
)
( )
Collector current IC mA
Collector to emitter voltage VCE
4
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR4114
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
VCE=–10V
Ta=25˚C
–30
IB=–1.0mA
–0.9mA
–0.8mA
–10
–0.7mA
–0.6mA
–3
–1
Ta=75˚C
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–1000
–10000
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–300
–100
–300
–100
–30
–10
–30
–10
–3
–1
–3
–1
–0.3
–0.1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
(
V
)
(
)
( )
V
Collector to base voltage VCB
Output current IO mA
Input voltage VIN
5
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Characteristics charts of UNR4115
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Ta=75˚C
–3
–1
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
Ta=75˚C
–0.3
–0.1
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
–0.1 –0.3
–1
–3
–10 –30 –100
0
–2
–4
–6
–8
–10 –12
( )
–1
–3
–10 –30 –100 –300 –1000
(
)
Collector current IC mA
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
5
4
3
2
1
0
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
(
)
Output current IO mA
Characteristics charts of UNR4116
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–0.9mA
–0.8mA
–10
–0.7mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
–3
–1
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.03
–0.01
–0.1mA
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
6
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR4117
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–10
–3
–1
Ta=75˚C
Ta=75˚C
–0.3
–0.1
–0.3mA
–0.2mA
25˚C
25˚C
–25˚C
–25˚C
–0.1mA
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
6
5
4
3
2
1
0
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
Input voltage VIN
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
7
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Characteristics charts of UNR4118
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
40
0
–240
–200
–160
–120
–80
–40
0
–100
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–3
–1
Ta=75˚C
25˚C
Ta=75˚C
–0.6mA
–0.5mA
–0.3
–0.1
–25˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
Collector to base voltage VCB
( )
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UNR4119
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=75˚C
–3
–1
Ta=75˚C
25˚C
–25˚C
–0.3
–0.1
–0.6mA
–0.5mA
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
8
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
(
V
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UNR4110
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–0.9mA
–30
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–10
Ta=75˚C
–3
–1
–0.3mA
25˚C
Ta=75˚C
–0.2mA
–0.1mA
–25˚C
–0.3
–0.1
25˚C
–25˚C
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
0
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
( )
Output current IO mA
(
V
)
Input voltage VIN
Collector to base voltage VCB
9
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Characteristics charts of UNR411D
IC — VCE
VCE(sat) — IC
hFE — IC
–60
–50
–40
–30
–20
–10
0
–100
160
120
80
40
0
IC/IB=10
IB=–1.0mA
–0.9mA
Ta=25˚C
VCE=–10V
Ta=75˚C
–0.8mA
–30
–10
–3
–1
25˚C
–0.3mA
–0.2mA
–25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR411E
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–60
–50
–40
–30
–20
–10
0
400
300
200
100
0
IC/IB=10
IB=–1.0mA
–0.9mA
Ta=25˚C
VCE=–10V
–0.8mA –0.7mA
–30
–10
–3
–1
–0.3mA
–0.2mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
25˚C
–25˚C
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
(
V
)
Collector current IC mA
Collector to emitter voltage VCE
10
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
)
Input voltage VIN
(
V
)
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UNR411F
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–10
–3
–1
25˚C
–25˚C
Ta=75˚C
–0.5mA
–0.3
–0.1
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–0.03
–0.01
–3
–1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
( )
Output current IO mA
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
11
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Characteristics charts of UNR411H
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
–10
–1
IB=–0.5mA
–0.4mA
Ta=75˚C
25˚C
Ta=75˚C
25˚C
–0.3mA
–25˚C
–0.2mA
–0.1
40
–25˚C
–0.1mA
–0.01
0
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
Collector to emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UNR411L
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–240
–200
–160
–120
–80
–40
0
240
200
160
120
80
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
–3
–1
IB=–1.0mA
–0.8mA
Ta=75˚C
Ta=75˚C
25˚C
–0.3
–0.1
–0.6mA
25˚C
–25˚C
–0.4mA
–0.2mA
–25˚C
40
–0.03
–0.01
0
–1
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
(
)
( )
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
12
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
13
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and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
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Due to modification or other reasons, any information contained in this material, such as available
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Customers are advised to contact our semiconductor sales office and obtain the latest information
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2001 MAR
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