UT62L256C [ETC]
ASYNCHRONOUS STATIC RAM- High Speed ; 异步静态RAM-高速\n
| 型号： | UT62L256C |
| 厂家： | 
ETC |
| 描述： | ASYNCHRONOUS STATIC RAM- High Speed
|
| 文件： | 总14页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
REVISION HISTORY
REVISION
DESCRIPTION
Date
Preliminary Rev. 0.1 Original
May 4,2001
Jul 16,2001
Jul 16,2002
Rev. 1.0
Rev. 1.1
Sample ready and release
1.Add 28-pin 8x20 mm TSOP-I
2.Add 28L 8x20mm TSOP-I outline dimension
Add order information for lead free product
Rev. 1.2
May 13,2003
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
1
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
FEATURES
GENERAL DESCRIPTION
ꢀ Fast access time : 35/70ns (max.)
ꢀ Low power consumption:
Operating current : 40/20 mA (max)
Standby current : 1 µA (typical) L-version
0.5µA(typical) LL-version
ꢀ Single 2.7V ~ 3.6V power supply
ꢀ All inputs and outputs TTL compatible
ꢀ Fully static operation
The UT62L256C is a 262,144-bit low power CMOS
static random access memory organized as 32,768
words by 8 bits. It is fabricated using high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The UT62L256C is designed for high-speed and
low power application. It is particularly well suited
for battery back-up nonvolatile memory application.
ꢀ Three state outputs
ꢀ Data retention voltage : 1.5V (min.)
ꢀ Package : 28-pin 600 mil PDIP
28-pin 330 mil SOP
The UT62L256C operates from a single
2.7V ~ 3.6V power supply and all inputs and
outputs are fully TTL compatible
28-pin 8x13.4mm STSOP
28-pin 8x20 mm TSOP-I
FUNCTIONAL BLOCK DIAGRAM
×
32K
8
A0-A14
DECODER
MEMORY
ARRAY
Vcc
Vss
I/O DATA
CIRCUIT
I/O1-I/O8
COLUMN I/O
CE
WE
OE
CONTROL
CIRCUIT
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
2
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
PIN CONFIGURATION
Vcc
WE
A14
A12
A7
1
28
27
A10
CE
1
28
27
OE
A11
2
3
2
3
26
25
A13
A8
26
25
A9
A8
I/O8
I/O7
4
A6
4
A5
5
6
24
23
A9
A13
WE
Vcc
5
6
24
23
I/O6
A4
A11
I/O5
I/O4
7
22
21
A3
OE
7
8
9
22
21
8
9
A2
A10
A14
A12
A7
Vss
I/O3
I/O2
I/O1
A0
UT62L256C
20
19
A1
CE
20
19
A0
10
11
I/O8
I/O7
I/O6
I/O5
I/O4
10
11
18
17
I/O1
I/O2
I/O3
Vss
18
17
A6
12
12
A5
13
14
16
15
13
14
16
15
A4
A1
A3
A2
PDIP/SOP
STSOP/TSOP-I
PIN DESCRIPTION
SYMBOL
A0 - A14
I/O1 - I/O8
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
CE
WE
OE
VCC
VSS
Power Supply
Ground
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
3
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
VTERM
RATING
-0.5 to 4.5
0 to 70
-65 to 150
1
UNIT
V
℃
Terminal Voltage with Respect to VSS
Operating Temperature
Storage Temperature
TA
℃
TSTG
PD
Power Dissipation
W
mA
℃
DC Output Current
IOUT
Tsolder
50
Soldering Temperature (under 10 sec)
260
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
OE
X
H
L
X
I/O OPERATION SUPPLY CURRENT
CE
H
L
L
L
WE
X
H
H
L
High - Z
High - Z
DOUT
ISB, ISB1
ICC, Icc1, Icc2
ICC, Icc1, Icc2
ICC, Icc1, Icc2
Write
DIN
Note: H = VIH, L=VIL, X = Don't care.
℃
(VCC = 2.7V ~ 3.6V, TA = 0 to 70
℃
)
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Input High Voltage
Input Low Voltage
Input Leakage Current
SYMBOL TEST CONDITION
MIN.
2.0
- 0.5
- 1
TYP.
MAX.
VCC+0.5
UNIT
V
V
*1
VIH
-
-
-
-
*2
VIL
0.6
1
ILI
A
µ
≦
≦
VSS VIN VCC
Output Leakage
Current
ILO
- 1
1
A
µ
≦
≦
VSS VI/O VCC
=V or
= VIH
CE
or
OE
IH
= VIL
WE
Output High Voltage
Output Low Voltage
Average Operating
Power supply Current
VOH
VOL
ICC
IOH= - 1mA
IOL= 4mA
2.4
-
-
-
-
V
V
mA
mA
-
-
-
0.4
40
Cycle time=Min.,
= VIL ,II/O = 0mA ,
- 35
- 70
-
20
6
CE
Cycle time=1us
=0.2V; II/O = 0mA
Icc1
Icc2
-
-
mA
mA
mA
CE
other pins at 0.2V or Vcc-0.2V;
Cycle time=500ns
-
-
12
=0.2V; II/O = 0mA
CE
other pins at 0.2V or Vcc-0.2V
Standby Power
Supply Current
ISB
-
-
-
-
1
3
=VIH
CE
CE
ISB1
-L
40
20
A
A
µ
≧
VCC-0.2V
-LL
0.5
µ
Notes:
1. Overshoot : Vcc+3.0v for pulse width less than 10ns.
2. Undershoot : Vss-3.0v for pulse width less than 10ns.
3. Overshoot and Undershoot are sampled, not 100% tested.
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
4
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
℃
CAPACITANCE (TA=25 , f=1.0MHz)
PARAMETER
Input Capacitance
SYMBOL
MIN.
-
-
MAX
8
10
UNIT
pF
pF
CIN
CI/O
Input/Output Capacitance
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
0V to 3.0V
5ns
1.5V
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
CL = 100pF, IOH/IOL = -1mA/4mA
℃
(VCC = 2.7V~3.6V , TA = 0 to 70
℃
)
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYMBOL
UT62L256C-35
UT62L256C-70
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
35
-
-
-
10
5
-
-
5
-
70
-
-
-
10
5
-
-
5
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
35
35
25
-
70
70
35
-
-
-
25
25
-
35
35
-
(2) WRITE CYCLE
PARAMETER
SYMBOL
UT62L256C-35
UT62L256C-70
UNIT
MIN.
35
30
30
0
25
0
20
0
MAX.
MIN.
70
60
60
0
50
0
30
0
MAX.
Write Cycle Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High Z
5
-
-
15
5
-
-
25
tOW*
tWHZ*
*These parameters are guaranteed by device characterization, but not production tested.
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
5
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled)
(1,2)
tRC
Address
tAA
tOH
tOH
Previous data valid
Dout
Data Valid
READ CYCLE 2 (
and
Controlled)
OE
(1,3,4,5)
CE
tRC
Address
CE
tAA
tACE
OE
tCHZ
tOHZ
tOH
tOE
tCLZ
tOLZ
Dout
High-Z
High-Z
Data Valid
Notes :
1.
is high for read cycle.
WE
2.Device is continuously selected
=low,
=low.
CE
OE
3.Address must be valid prior to or coincident with
=low,; otherwise tAA is the limiting parameter.
CE
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL=5pF. Transition is measured 500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ
±
.
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
6
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
WRITE CYCLE 1 (
Controlled)
(1,2,3,5,6)
WE
tWC
Address
CE
tAW
tCW
tAS
tWP
tWR
WE
tWHZ
(4)
tOW
High-Z
Dout
Din
(4)
tDW
tDH
Data Valid
WRITE CYCLE 2 (
Controlled)
(1,2,5,6)
CE
tWC
Address
tAW
tWR
tAS
CE
tCW
tWP
WE
tWHZ
High-Z
(4)
Dout
Din
tDW
tDH
Data Valid
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
7
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
Notes :
1.
,
must be high during all address transitions.
WE CE
2.A write occurs during the overlap of a low
, low
.
WE
CE
3.During a
controlled write cycle with
OE
low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be
WE
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the low transition occurs simultaneously with or after low transition, the outputs remain in a high impedance state.
CE
WE
±
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured 500mV from steady state.
℃
(TA = 0 to 70
℃
)
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Vcc for Data Retention
VDR
IDR
1.5
-
3.6
V
≧
V
CC-0.2V
CE
Vcc=2.5V
Data Retention Current
- L
- LL
-
-
1
0.5
20
10
A
µ
A
µ
≧
VCC-0.2V
CE
Chip Disable to Data
Retention Time
Recovery Time
tCDR
tR
See Data Retention
Waveforms (below)
0
-
-
ns
tRC*
-
-
ns
tRC*
= Read Cycle Time
DATA RETENTION WAVEFORM
≧
VDR
1.5V
VCC
Vcc(min.)
Vcc(min.)
t
CDR
t
R
≧
CE
VCC-0.2V
VIH
VIH
CE
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
8
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
PACKAGE OUTLINE DIMENSION
28 pin 600 mil PDIP PACKAGE OUTLINE DIMENSION
UNIT
INCH(BASE)
MM(REF)
SYMBOL
A1
A2
B
B1
c
0.010 (MIN)
0.254 (MIN)
±
±
0.150 0.005
3.810 0.127
0.020 (MAX)
0.055 (MAX)
0.012 (MAX)
0.508(MAX)
1.397(MAX)
0.304 (MAX)
D
1.430 (MAX) 36.322 (MAX)
E
E1
e
eB
L
S
0.6 (TYP)
0.52 (MAX)
0.100 (TYP)
0.625 (MAX)
0.180(MAX)
0.06 (MAX)
0.08(MAX)
15o(MAX)
15.24 (TYP)
13.208 (MAX)
2.540(TYP)
15.87 (MAX)
4.572(MAX)
1.524 (MAX)
2.032(MAX)
15o(MAX)
Q1
Θ
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
9
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
28 pin 330 mil SOP PACKAGE OUTLINE DIMENSION
UNIT
INCH(BASE)
MM(REF)
SYMBOL
A
A1
A2
b
0.120 (MAX)
0.002(MIN)
3.048 (MAX)
0.05(MIN)
±
±
0.098 0.005
2.489 0.127
0.0016 (TYP)
0.010 (TYP)
0.406(TYP)
0.254(TYP)
c
D
E
0.728 (MAX) 18.491 (MAX)
0.340 (MAX) 8.636 (MAX)
E1
e
L
±
±
0.465 0.012 11.811 0.305
0.050 (TYP)
0.05 (MAX)
1.270(TYP)
1.270 (MAX)
L1
S
y
Θ
±
±
0.067 0.008 1.702 0.203
0.047 (MAX)
0.003(MAX)
1.194 (MAX)
0.076(MAX)
o
o
∼
∼
0
10o
0
10o
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
10
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
28 pin 8x13.4mm STSOP PACKAGE OUTLINE DIMENSION
UNIT
SYMBOL
INCH(BASE)
MM(REF)
A
0.047 (MAX) 1.20 (MAX)
A1
±
±
0.10 0.05
0.004 0.002
A2
b
c
±
±
0.039 0.002
1.00 0.05
0.006 (TYP)
0.010 (TYP)
0.15(TYP)
0.254(TYP)
：
Note
Db
E
e
D
L
±
±
11.80 0.10
0.465 0.004
E dimension is not including end flash
The total of both sides’ end flash is
Not above 0.3mm.
±
±
0.315 0.004
8.00 0.10
0.022 (TYP)
0.55(TYP)
±
13.40 0.20
±
0.50 0.10
±
0.528 0.008
±
0.020 0.004
L1
y
Θ
±
±
0.0315 0.004
0.80 0.10
0.08(MAX)
0.003(MAX)
o
o
∼
∼
0
5o
0
5o
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
11
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
28 pin 8x20mm TSOP-I PACKAGE OUTLINE DIMENSION
：
Note
UNIT
SYMBOL
INCH(BASE)
0.047 (MAX)
MM(REF)
E dimension is not including end flash
The total of both sides’ end flash is
Not above 0.3mm.
A
A1
1.20 (MAX)
±
0.10 0.05
±
0.004 0.002
A2
b
c
±
±
0.039 0.002
1.00 0.05
0.008 (TYP)
0.008 (TYP)
0.20(TYP)
0.15(TYP)
Db
±
±
11.80 0.10
0.465 0.004
E
e
±
±
0.315 0.004
8.00 0.10
0.022 (TYP)
0.55(TYP)
D
L
±
±
13.40 0.20
±
0.50 0.10
0.528 0.008
±
0.020 0.004
L1
y
Θ
±
±
0.0315 0.004
0.80 0.10
0.003(MAX)
0.08(MAX)
o
o
∼
∼
0
5o
0
5o
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
12
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
ORDERING INFORMATION
PART NO.
ACCESS TIME
STANDBY CURRENT
(µA) typ.
PACKAGE
28PIN PDIP
28PIN PDIP
28PIN PDIP
28PIN PDIP
28PIN SOP
28PIN SOP
28PIN SOP
28PIN SOP
28PIN STSOP
28PIN STSOP
28PIN STSOP
28PIN STSOP
28PIN TSOP-I
28PIN TSOP-I
28PIN TSOP-I
28PIN TSOP-I
(ns)
35
35
70
70
35
35
70
70
35
35
70
70
35
35
70
70
UT62L256CPC-35L
UT62L256CPC-35LL
UT62L256CPC-70L
UT62L256CPC-70LL
UT62L256CSC-35L
UT62L256CSC-35LL
UT62L256CSC-70L
UT62L256CSC-70LL
UT62L256CLS-35L
UT62L256CLS-35LL
UT62L256CLS-70L
UT62L256CLS-70LL
UT62L256CLC-35L
UT62L256CLC-35LL
UT62L256CLC-70L
UT62L256CLC-70LL
1
0.5
1
0.5
1
0.5
1
0.5
1
0.5
1
0.5
1
0.5
1
A
µ
µ
µ
µ
µ
µ
µ
µ
A
µ
A
A
µ
A
A
µ
A
A
µ
A
A
µ
A
A
µ
A
A
µ
A
0.5
A
µ
ORDERING INFORMATION (for lead free product)
PART NO.
ACCESS TIME
(ns)
STANDBY CURRENT
PACKAGE
(µA) typ.
UT62L256CPCL-35L
UT62L256CPCL-35LL
UT62L256CPCL-70L
UT62L256CPCL-70LL
UT62L256CSCL-35L
UT62L256CSCL-35LL
UT62L256CSCL-70L
UT62L256CSCL-70LL
UT62L256CLSL-35L
UT62L256CLSL-35LL
UT62L256CLSL-70L
UT62L256CLSL-70LL
UT62L256CLCL-35L
UT62L256CLCL-35LL
UT62L256CLCL-70L
UT62L256CLCL-70LL
35
35
70
70
35
35
70
70
35
35
70
70
35
35
70
70
28PIN PDIP
28PIN PDIP
28PIN PDIP
28PIN PDIP
28PIN SOP
28PIN SOP
28PIN SOP
28PIN SOP
28PIN STSOP
28PIN STSOP
28PIN STSOP
28PIN STSOP
28PIN TSOP-I
28PIN TSOP-I
28PIN TSOP-I
28PIN TSOP-I
1
0.5
1
0.5
1
0.5
1
0.5
1
0.5
1
0.5
1
0.5
1
0.5
A
µ
µ
µ
µ
µ
µ
µ
µ
A
µ
A
A
µ
A
A
µ
A
A
µ
A
A
µ
A
A
µ
A
A
µ
A
A
µ
___________________________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
13
UTRON
UT62L256C
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.2
THIS PAGE IS LEFT BLANK INTENTIONALLY.
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UTRON TECHNOLOGY INC.
P80057
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
14
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