VTT1223WH [ETC]
Low-cost visible and near-IR photodetection;
| 型号： | VTT1223WH |
| 厂家： | 
ETC |
| 描述： | Low-cost visible and near-IR photodetection |
| 文件： | 总3页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Phototransistors
phototransistors
Features
Description
• Low-cost visible and near-IR
photodetection
• Available with gains from 100
to over 1500
Phototransistors are photodiode-amplifier combinations
integrated within a single silicon chip. These are combined to
overcome the major fault of photodiodes: unity gain. Many
applications demand a greater output signal from the photodetector
than can be generated by a photodiode alone. While the signal
from a photodiode can always be amplified through use of an
external op-amp or other circuitry, this approach is often not as
practical or as cost-effective as the use of phototransistors. The
phototransistor can be viewed as a photodiode whose output
photocurrent is fed into the base of a conventional small-signal
transistor. While not required for operation of the device as a
photodetector, a base connection is often provided, allowing the
designer the option of using base current to bias the transistor. The
typical gain of a phototransistor can range from 100 to over 1500.
• Moderately fast response times
• Available in a wide range of
packages including epoxy-coated,
transfer-molded, cast, hermetic
packages, chip form and surface
mounting technology
• Usable with almost any visible
or near-infrared light source such
as IREDs, neon, fluorescent,
incandescent bulbs, lasers, flame
sources, sunlight, etc.
• Same general electrical
characteristics as familiar signal
transistors
Phototransistors can be used as ambient-light detectors. When
used with a controllable light source, typically an IRED, they
are often employed as the detector element for optoisolators and
transmissive or reflective optical switches.
Typical Applications
• Computer/business equipment
• Write-protect control
• Margin controls—printers
• Industrial
All phototransistors are RoHS compliant.
Absolute Maximum Ratings
Maximum Temperatures
Storage and Operating:
-25°C to 80°C (CR10TE, CR50TE)
-40°C to 100°C
• LED light source—light pens
• Security systems
-40°C to 110°C (VTT1015, VTT1016,
VTT1017, VTT1115, VTT1116, and VTT1117)
-40°C to 85°C (VTT7222, VTT7223,
VTT7225, VTT7122, VTT7123, and VTT7125)
-40°C to 70°C (VTT9002, VTT9003,
VTT9102, and VTT9103)
• Safety shields
• Consumer
• Coin counters
• Lottery card readers
• Position sensors—joysticks
• Remote controllers—toys,
appliances, audio/visual
equipment
Continuous Power Dissipation: 50 mW
100 mW (VTT9002, VTT9003, VTT9102,
and VTT9103)
• Games—laser tag
• Camera shutter control
200 mW (CR10TE, CR50TE)
250 mW (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
Principle of Operation
Phototransistors are solid-state light
detectors that possess internal gain.
They can be used to provide either
an analog or digital output signal.
Derate above 30°C:
0.71 mW/˚C
2.5 mW/˚C (VTT9002, VTT9003, VTT9102,
and VTT9103)
3.12 mW/˚C (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
0.91 mW/˚C (VTT7122, VTT7123, VTT7125)
Datasheets available upon request.
Maximum Current:
25 mA
200 mA (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
Lead-Soldering Temperature: 260°C (1.6 mm from case, 5 sec. max.)
www.optoelectronics.perkinelmer.com
19
phototransistors
.025’’ x .025’’ NPN Phototransistors
Technical Specification
Light Current
H fc (mW/cm2)
=5 V
Dark Current
Angular
Part
nA
V
V
V
V
t /t
R F
Response
CE
BR(CEO)
BR(ECO)
CE(SAT)
Number
mA min.
1.9
1.5
4
V
max.
Volts
20
20
10
10
10
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
Volts min. Volts min. Volts max. µsec, typ.
θ
1/2
CE
VTT1222WH
VTT1223WH
VTT1225H
100 (5)
100 (5)
100 (5)
100 (5)
100 (5)
100 (5)
100 (5)
100 (5)
100 (5)
20 (1)
10
50
40
30
30
30
50
40
40
30
30
30
30
30
30
30
30
30
30
30
30
30
6
6
5
5
5
6
6
6
4
5
5
5
5
5
5
5
5
5
5
5
5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
2
3
40˚
40˚
5˚
10
100
100
100
10
1.5
3
VTT1226H
7.5
12
0.8
1
5˚
VTT1227H
4
5˚
VTT1322WH
VTT1323WH
VTT3122EH
VTT3123EH
VTT3323LAH
VTT3324LAH
VTT3325LAH
VTT3423LAH
VTT3424LAH
VTT3425LAH
VTT7122H
2
40˚
40˚
8˚
10
3
1.2
4
100
100
100
100
100
100
100
100
100
100
100
100
100
100
2.5
4
NPN Phototransistors
8˚
0.25", small area, high speed
0.04", medium area, high sensitivity
0.05", large area, high sensitivity
2
3
10˚
10˚
10˚
10˚
10˚
10˚
36˚
36˚
36˚
36˚
36˚
36˚
4
20 (1)
4
6
20 (1)
5
1
20 (1)
3
2
20 (1)
4
3
20 (1)
5
Table Key
1
100 (5)
100 (5)
100 (5)
100 (5)
100 (5)
100 (5)
2
I
Light Current
C
VTT7123H
2
2
I
Dark Current H=0
CEO
VTT7125H
4.5
0.9
1.8
4
2
V
V
V
Collector Breakdown I =100 µA, H=0
Emitter Breakdown I =100 µA, H=0
E
BR(CEO)
BR(ECO)
CE(SAT)
C
VTT7222H
2
Saturation Voltage I =1 mA, H=400 fc
C
VTT7223H
2
t /t
Rise/Fall Time I =1 mA, R =100 Ω
R
F
C
L
VTT7225H
4
Electro-Optical Characteristics @ 25°C
Clear T-1 3/4 (5 mm) Plastic Package
.04’’ x .04’’ NPN Phototransistors
VTT1212
VTT1214
VTT1222W VTT1226
VTT1223W VTT1227
VTT1225
Technical Specification
Light Current
H fc (mW/cm2)
=5 V
Dark Current
Angular
Part
Number
nA
V
V
V
V
t /t
R F
Response
CE
BR(CEO)
BR(ECO)
CE(SAT)
mA min.
V
max.
Volts
10
10
10
10
10
10
5
Volts min. Volts min. Volts max. µsec, typ.
θ
1/2
CE
IRT T-1 3/4 (5mm) Plastic Package
VTT1322W VTT1312
VTT1323W VTT1314
VTT1212H
VTT1214H
VTT1312H
VTT1314H
VTT9002H
VTT9003H
VTT9102H
VTT9103H
2
4
20 (1)
20 (1)
100
100
100
100
100
100
100
100
30
30
30
30
30
30
30
30
5
5
5
5
6
6
4
4
0.25
0.25
0.25
0.25
0.55
0.55
0.55
0.55
4
6
10˚
10˚
10˚
10˚
50˚
50˚
42˚
42˚
1
20 (1)
4
Coax Hermetic (with case lead)
VTT3122E
2.4
2
20 (1)
6
VTT3123E
100 (5)
100 (5)
100 (5)
100 (5)
4
Clear Long T-1 (3 mm) Plastic Package
VTT3323LA VTT3324LA VTT3325LA
5
6
6
6
IRT Long T-1 (3 mm) Plastic Package
13
5
10
VTT3423LA VTT3424LA VTT3425LA
Electro-Optical Characteristics @ 25°C
Molded, Lensed Lateral Package
VTT7122
IRT Molded, Lensed Lateral Package
VTT7222 VTT7223 VTT7225
Clear Epoxy TO-106 Ceramic Package
VTT9002 VTT9003
Epoxy Lensed TO-106 Ceramic Package
VTT9102 VTT9103
VTT7123
VTT7125
20
www.optoelectronics.perkinelmer.com
Phototransistors
TO-46 Flat Window Package
VTT1015 VTT1016
TO-46 Lensed Package
.05’’ x .05’’ NPN Phototransistors
VTT1017
VTT1117
Technical Specification
Light Current
H fc (mW/cm2)
=5 V
Dark Current
Angular
Part
Number
nA
V
V
V
V
t /t
R F
Response
CE
Volts
BR(CEO)
BR(ECO)
CE(SAT)
VTT1115
VTT1116
mA min.
V
max.
Volts min. Volts min. Volts max. µsec, typ.
θ
1/2
CE
VTT1015H
VTT1016H
VTT1017H
VTT1115H
VTT1116H
VTT1117H
0.4
1
100 (5)
100 (5)
100 (5)
20 (1)
25
25
20
40
30
20
30
30
30
6
6
4
6
4
4
0.4
0.4
0.4
0.4
0.4
0.4
5
5
8
5
8
8
35˚
35˚
35˚
15˚
15˚
15˚
20
2.5
1
25
10
Table Key
100
100
100
10
I
Light Current
Dark Current H=0
Collector Breakdown I =100 µA, H=0
C
I
CEO
2
20 (1)
10
V
BR(CEO)
C
4
20 (1)
10
V
Emitter Breakdown I =100 µA, H=0
E
BR(ECO)
V
Saturation Voltage I =1 mA, H=400 fc
CE(SAT)
C
Electro-Optical Characteristics @ 25°C
t /t
Rise/Fall Time I =1 mA, R =100 Ω
R
F
C
L
I
Technical Specification
Peak Sensitivity
Wavelength
(nm)
Dark
Active
Rise/Fall
Time
Part
Number
Spectral
Range
Vce P-Current Current
Area
Package*
(V)
(nA)
(mm2)
Orientation
Ceramic
CR10TE
CR50TE
400–1070
400–1070
850
850
40
3
3
400
0.19
0.19
10/10
10/10
High Vce
SMD (A1)
Ceramic
40
400
High Vce
SMD (A2)
* All packages are listed on our website.
CR10TE
• Surface mounting device
• Solid state ceramic chip
• High thermal conductivity
• Special type (CR10TE-DLF) with
daylight filter on request
www.optoelectronics.perkinelmer.com
21
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