IST007N04NM6
采用封装的OptiMOS™ 6 功率 MOSFET40V MOSFETsTOLL具有极低的 RDS(on) (0.70mOhm)和 440A 的高电流能力。英飞凌在强大的工业封装领域质量突出,是改进电池供电应用、电池保护和电池成型等各种性能的理想解决方案。
电池
INFINEON
STM32L4R5ZIT3SXXX
Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150DMIPS, up to 2MB Flash, 640KB SRAM, LCD-TFT & MIPI DSI, ext. SMPS
CD 静态存储器
STMICROELECTR
STM32L4R9QGT3STR
Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150DMIPS, up to 2MB Flash, 640KB SRAM, LCD-TFT & MIPI DSI, ext. SMPS
CD 静态存储器
STMICROELECTR
STM32L4R9ZGT3STR
Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150DMIPS, up to 2MB Flash, 640KB SRAM, LCD-TFT & MIPI DSI, ext. SMPS
CD 静态存储器
STMICROELECTR
STM32L4R9ZII6SXXX
Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150DMIPS, up to 2MB Flash, 640KB SRAM, LCD-TFT & MIPI DSI, ext. SMPS
CD 静态存储器
STMICROELECTR
10-P107NIB150SG06-M136F39Y
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
暂无信息
VINCOTECH
STM32L4R9ZIT6SXXX
Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150DMIPS, up to 2MB Flash, 640KB SRAM, LCD-TFT & MIPI DSI, ext. SMPS
CD 静态存储器
STMICROELECTR
2007815-3
IMPACT, 4 PAIR, 10 COLUMN, HEADER RIGHT GUIDED, LEFT END WALL SIGNAL MODULE, 0.36 PTH
暂无信息
TE
STM32L4R7AII3PXXX
Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150DMIPS, up to 2MB Flash, 640KB SRAM, LCD-TFT & MIPI DSI, ext. SMPS
CD 静态存储器
STMICROELECTR
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH