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IST007N04NM6 [INFINEON]

采用封装的OptiMOS™ 6 功率 MOSFET40V MOSFETsTOLL具有极低的 RDS(on) （0.70mOhm）和 440A 的高电流能力。英飞凌在强大的工业封装领域质量突出，是改进电池供电应用、电池保护和电池成型等各种性能的理想解决方案。;
IST007N04NM6
型号： IST007N04NM6
厂家： Infineon    Infineon
描述：

采用封装的OptiMOS™ 6 功率 MOSFET40V MOSFETsTOLL具有极低的 RDS(on) （0.70mOhm）和 440A 的高电流能力。英飞凌在强大的工业封装领域质量突出，是改进电池供电应用、电池保护和电池成型等各种性能的理想解决方案。

电池
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中文：  中文翻译
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IST007N04NM6  
MOSFET  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
sTOLL  
Features  
6, Tab  
•ꢀOptimizedꢀforꢀlowꢀvoltageꢀmotorꢀdrivesꢀapplication  
•ꢀOptimizedꢀforꢀbatteryꢀpowerꢀapplications  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀSuperiorꢀthermalꢀperformance  
•ꢀN-channel  
1
2
3
4
5
•ꢀPb-freeꢀleadꢀplatingꢀ:ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀ175°Cꢀrated  
Drain  
Pin 6, Tab  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
*1  
Gate  
Pin 5  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Source  
Pin 1-4  
*1: Internal body diode  
Parameter  
Value  
Unit  
VDS  
40  
V
RDS(on),max  
ID  
0.7  
mΩ  
A
440  
122  
114  
Qoss  
nC  
nC  
QG(0V..10V)  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IST007N04NM6  
sTOLL  
7N04N6  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
-
-
-
-
-
-
440  
311  
54  
Continuous drain current1)  
ID  
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,  
RTHJA=40ꢀ°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
1760  
400  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=125ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
250  
3.8  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRTHJA=40ꢀ°C/W2)  
IEC climatic category; DIN IEC 68-1:  
55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
-
-
-
0.6  
°C/W -  
°C/W -  
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
RthJA  
-
40  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
40  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
2.1  
3.3  
VDS=VGS,ꢀID=250ꢀµA  
-
-
-
-
1
100  
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
-
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
0.5  
0.7  
0.7  
-
VGS=10ꢀV,ꢀID=100ꢀA  
VGS=6ꢀV,ꢀID=50ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
-
-
0.9  
-
-
Ω
-
Transconductance  
320  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
7900  
3200  
150  
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=2.7ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
23  
23  
48  
14  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=2.7ꢀΩ  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=2.7ꢀΩ  
Turn-off delay time  
Fall time  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=2.7ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
32  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
18  
-
20  
-
Qsw  
33  
-
Gate charge total  
Qg  
114  
4
152  
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge  
Vplateau  
Qg(sync)  
Qoss  
-
-
-
94  
-
122  
-
VDS=20ꢀV,ꢀVGS=0ꢀV  
1) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
250  
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
1760  
A
TC=25ꢀ°C  
Diode forward voltage  
0.83  
61  
90  
1
-
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C  
VR=20ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=20ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
ns  
nC  
Qrr  
-
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
280  
500  
240  
200  
160  
120  
80  
400  
300  
200  
100  
0
40  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
104  
101  
single pulse  
0.01  
0.02  
1 µs  
0.05  
0.1  
0.2  
0.5  
103  
10 µs  
100  
10-1  
10-2  
10 ms  
100 µs  
102  
101  
100  
10-1  
1 ms  
DC  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1760  
2.4  
10 V  
1600  
2.2  
2.0  
7 V  
1440  
6 V  
4.5 V  
1280  
1120  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
960  
5.5 V  
800  
5 V  
640  
5 V  
5.5 V  
480  
7 V  
320  
4.5 V  
10 V  
160  
4 V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
40 80 120 160 200 240 280 320 360 400 440  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1760  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
1600  
1440  
1280  
1120  
960  
800  
175 °C  
640  
0.8  
0.6  
0.4  
0.2  
0.0  
480  
25 °C  
320  
160  
0
25 °C  
175 °C  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
2
4
6
8
10  
12  
14  
16  
18  
20  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=100ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
3.2  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
2500 µA  
250 µA  
-80  
-40  
0
40  
80  
120  
160  
200  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
105  
104  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
104  
103  
102  
101  
103  
102  
101  
100  
Ciss  
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
10  
8 V  
20 V  
32 V  
8
6
4
2
0
102  
25 °C  
100 °C  
101  
150 °C  
100  
100  
101  
102  
103  
0
20  
40  
60  
80  
100  
120  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
44  
43  
42  
41  
40  
39  
38  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
DIMENSION  
MIN.  
2.20  
0.40  
0.70  
0.42  
6.80  
6.80  
1.10  
1.55  
MAX.  
2.40  
0.60  
0.90  
0.50  
7.20  
7.00  
1.30  
1.75  
A
A1  
b
b1  
D
D1  
D2  
D3  
D4  
D5  
D6  
E
6.56  
5.96  
5.60  
DOCUMENT NO.  
Z8B000195632  
6.50  
7.80  
0.60  
0.50  
6.90  
8.20  
0.80  
0.70  
REVISION  
E1  
E2  
E3  
E4  
E5  
E6  
E7  
E8  
e
01  
SCALE 5:1  
2.43  
2.30  
5.20  
2.57  
2.50  
1.60  
1.30  
0
1
2
3
4
5mm  
EUROPEAN PROJECTION  
e1  
L
1.05  
0.80  
0.13  
1.40  
0.00  
8.50°  
1.25  
1.00  
L1  
L2  
P
0.33  
1.60  
ISSUE DATE  
11.06.2019  
Q
0.10  
W
11.50°  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀsTOLL,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2020-06-18  
OptiMOSTM6ꢀPower-Transistor,ꢀ40ꢀV  
IST007N04NM6  
RevisionꢀHistory  
IST007N04NM6  
Revision:ꢀ2020-06-18,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
1.0  
2.0  
Release of preliminary version  
Release of final version  
2020-04-27  
2020-06-18  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2020ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2020-06-18  

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