XN01507(XN1507) [ETC]
Composite Device - Composite Transistors ; 复合设备 - 复合晶体管\n
| 型号： | XN01507(XN1507) |
| 厂家： | 
ETC |
| 描述： | Composite Device - Composite Transistors
|
| 文件： | 总3页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN01507 (XN1507)
Silicon NPN epitaxial planer transistor
Unit: mm
For high break down voltage and low noise amplification
2.8+0.2
1.5+0.25
-
0.3
0.65 0.15
-
0.05
0.65 0.15
5
1
2
Features
I
G
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
4
3
G
Basic Part Number of Element
2SD0814(2SD814) × 2 elements
I
G
0.1 to 0.3
0.4 0.2
Absolute Maximum Ratings (Ta=25˚C)
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
I
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
150
150
V
Rating
Marking Symbol: 4O
Internal Connection
of
5
50
V
element
mA
mA
mW
˚C
ICP
100
Tr1
5
1
2
PT
300
Overall Junction temperature
Storage temperature
Tj
150
4
Tstg
–55 to +150
˚C
3
Tr2
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
VCEO
Conditions
min
150
5
typ
max
Unit
V
Collector to emitter voltage
Emitter to base voltage
IC = 100µA, IB = 0
VEBO
ICBO
hFE
IE = 10µA, IC = 0
V
Collector cutoff current
VCB = 100V, IE = 0
VCE = 5V, IC = 10mA
1
µA
Forward current transfer ratio
Forward current transfer hFE ratio
90
450
hFE (small/large)*1 VCE = 5V, IC = 10mA
0.5
0.99
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
1
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
150
2.3
Collector output capacitance
*1 Ratio between 2 elements
Cob
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XN01507
PT — Ta
IC — VCE
IC — VBE
500
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Ta=25˚C
VCE=10V
25˚C
Ta=75˚C
IB=2.0mA
400
300
200
100
0
–25˚C
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
0
40
80
120
160
)
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
(
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
V
VCE(sat) — IC
hFE — IC
fT — IE
100
600
500
400
300
200
100
0
200
160
120
80
IC/IB=10
VCB=10V
Ta=25˚C
VCE=10V
30
10
3
1
Ta=75˚C
25˚C
0.3
0.1
25˚C
Ta=75˚C
–25˚C
–25˚C
40
0.03
0.01
0
–1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
–2 –3 –5 –10 –20 –30 –50 –100
(
)
Collector current IC mA
(
)
(
)
Collector current IC mA
Emitter current IE mA
Cob — VCB
5
4
3
2
1
0
f=1MHz
IE=0
Ta=25˚C
1
2
3
5
10
20 30 50 100
(
)
V
Collector to base voltage VCB
2
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