XP04683 [ETC]
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 15MA I(C) | SOT-363 ; 晶体管| BJT | PAIR |辅食| 20V V（ BR ） CEO | 15MA I（C ） | SOT- 363\n
| 型号： | XP04683 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 15MA I(C) | SOT-363
|
| 文件： | 总6页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP04683 (XP4683)
NPN epitaxial planer transistor (Tr1)
PNP epitaxial planer transistor (Tr2)
Unit: mm
For high-frequency amplification (Tr1)
For general amplification (Tr2)
2.1 0.1
0.425
1.25 0.1
0.425
1
6
2
3
5
4
Features
I
G
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
G
Basic Part Number of Element
2SC2404 + 2SB0709A(2SB709A)
I
G
0.2 0.1
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
4 : Emitter (Tr2)
5 : Base (Tr2)
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
S–Mini Type Package (6–pin)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
30
20
V
Marking Symbol: ER
Internal Connection
Tr1
3
V
15
mA
V
VCBO
VCEO
VEBO
IC
–60
Tr1
1
2
3
6
5
4
–50
V
–7
V
Tr2
–100
–200
150
mA
mA
mW
˚C
Tr2
ICP
PT
Tj
150
Overall
Tstg
–55 to +150
˚C
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XP04683
Electrical Characteristics (Ta=25˚C)
Tr1
I
G
Parameter
Symbol
VCBO
Conditions
IC = 10µA, IE = 0
min
30
3
typ
max
Unit
V
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
VEBO
hFE
IE = 10µA, IC = 0
V
VCE = 6V, IC = –1mA
40
260
1
VBE
VCB = 6V, IE = –1mA
720
0.8
650
3.3
24
mV
pF
Common emitter reverse transfer capacitance Cre
VCB = 6V, IE = –1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 200MHz
Transition frequency
Noise figure
fT
450
MHz
dB
NF
PG
VCB = 6V, IE = –1mA, f = 100MHz
Power gain
VCB = 6V, IE = –1mA, f = 100MHz
dB
G
Tr2
Parameter
Symbol
Conditions
IC = –10µA, IE = 0
min
–60
–50
–7
typ
max
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
IC = –2mA, IB = 0
V
IE = –10µA, IC = 0
V
VCB = –20V, IE = 0
– 0.1
–100
460
µA
µA
Collector cutoff current
VCE = –10V, IB = 0
Forward current transfer ratio
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
160
Collector to emitter saturation voltage VCE(sat)
– 0.3
80
– 0.5
V
MHz
pF
Transition frequency
fT
Collector output capacitance
Cob
2.7
2
Composite Transistors
XP04683
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of Tr1
IC — VCE
IC — IB
IC — VBE
12
10
8
30
25
20
15
10
5
12
10
8
VCE=6V
Ta=25˚C
IB=100µA
VCE=6V
Ta=25˚C
25˚C
–25˚C
Ta=75˚C
80µA
60µA
6
6
40µA
20µA
4
4
2
2
0
0
0
0
40
80
120
160
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
(
(
)
( )
Base to emitter voltage VBE V
)
Base current IB µA
Collector to emitter voltage VCE
V
VCE(sat) — IC
hFE — IC
fT — IE
100
360
300
240
180
120
60
1200
1000
800
600
400
200
0
IC/IB=10
VCE=6V
VCB=6V
Ta=25˚C
30
10
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
25˚C
Ta=75˚C
–25˚C
0.03
0.01
0
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
3
Composite Transistors
XP04683
Zrb — IE
Cre — VCE
Cob — VCB
120
2.4
2.0
1.6
1.2
0.8
0.4
0
1.2
1.0
0.8
0.6
0.4
0.2
0
VCB=6V
f=2MHz
Ta=25˚C
IC=1mA
f=10.7MHz
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
100
80
60
40
20
0
–0.1
–0.3
–1
–3
–10
0.1 0.3
1
3
10
30
100
0
5
10
15
20
25
30
(
)
(
)
( )
Collector to base voltage VCB V
Emitter current IE mA
Collector to emitter voltage VCE
V
PG — IE
NF — IE
40
12
10
8
f=100MHz
Rg=50Ω
Ta=25˚C
f=100MHz
Rg=50Ω
Ta=25˚C
35
30
25
20
15
10
5
VCE=10V
6V
6
VCE=6V, 10V
4
2
0
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
Emitter current IE mA
Emitter current IE mA
Characteristics charts of Tr2
IC — VCE
IC — IB
IB — VBE
–60
–50
–40
–30
–20
–10
0
–400
–350
–300
–250
–200
–150
–100
–50
–60
–50
–40
–30
–20
–10
0
VCE=–5V
Ta=25˚C
Ta=25˚C
VCE=–5V
Ta=25˚C
IB=–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
0
0
–100
–200
–300
–400
0
–0.4
( )
Base to emitter voltage VBE V
–0.8
–1.2
–1.6
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
(
)
(
)
V
Base current IB µA
Collector to emitter voltage VCE
4
Composite Transistors
XP04683
IC — VBE
VCE(sat) — IC
hFE — IC
600
500
400
300
200
100
0
–10
–240
IC/IB=10
VCE=–10V
VCE=–5V
–3
–1
25˚C
–25˚C
–200
Ta=75˚C
Ta=75˚C
25˚C
–160
–120
–80
–40
0
Ta=75˚C
–0.3
–0.1
–25˚C
25˚C
–25˚C
–0.03
–0.01
–0.003
–0.001
–1
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
0
–0.4
–0.8
–1.2
–1.6
–2.0
(
)
(
)
(
)
V
Collector current IC mA
Collector current IC mA
Base to emitter voltage VBE
fT — IE
Cob — VCB
160
140
120
100
80
8
7
6
5
4
3
2
1
0
VCB=–10V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
60
40
20
0
0.1 0.3
1
3
10
30
100
–1
–2 –3 –5 –10 –20 –30 –50 –100
(
)
( )
Collector to base voltage VCB V
Emitter current IE mA
5
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2001 MAR
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