MC74VHC1G86DTT3 [ETL]
2-Input Exclusive OR Gate; 2输入异或门
| 型号： | MC74VHC1G86DTT3 |
| 厂家： | 
E-TECH ELECTRONICS LTD |
| 描述： | 2-Input Exclusive OR Gate |
| 文件： | 总4页 (文件大小：664K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2-Input Exclusive OR Gate
MC74VHC1G86
The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G86 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G86 to be used to interface 5 V circuits to 3 V circuits.
• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 54; Equivalent Gates = 16
MARKING DIAGRAMS
5
4
1
2
V8d
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
Pin 1
d = Date Code
5
Figure 1. Pinout (Top View)
4
V8d
1
2
3
Figure 2. Logic Symbol
SOT–23/TSOP–5/SC–59
DT SUFFIX
CASE 483
Pin 1
d = Date Code
FUNCTION TABLE
Inputs
Output
PIN ASSIGNMENT
A
L
B
L
Y
L
1
2
3
4
5
IN B
IN A
L
H
L
H
H
L
GND
OUT Y
V CC
H
H
H
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH86–1/4
MC74VHC1G86
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V CC
V IN
DC Supply Voltage
– 0.5 to + 7.0
– 0.5 to +7.0
– 0.5 to +7.0
–0.5 to V cc + 0.5
–20
DC Input Voltage
V
V OUT
DC Output Voltage
V CC=0
V
High or Low State
I IK
Input Diode Current
Output Diode Current
mA
mA
mA
mA
mW
°C/W
°C
I OK
I OUT
I CC
P D
θ JA
T L
V OUT < GND; V OUT > V CC
+20
DC Output Current, per Pin
DC Supply Current, V CC and GND
Power dissipation in still air
Thermal resistance
+ 25
+50
SC–88A, TSOP–5
SC–88A, TSOP–5
200
333
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
260
T J
+ 150
°C
T stg
V ESD
–65 to +150
>2000
°C
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
V
> 200
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
V CC
Parameter
Min
2.0
0.0
0.0
– 55
0
Max
5.5
Unit
V
DC Supply Voltage
DC Input Voltage
DC Output Voltage
V IN
5.5
V
V OUT
T A
V CC
+ 125
100
20
V
Operating Temperature Range
Input Rise and Fall Time
°C
ns/V
t r ,t f
V CC = 3.3 ± 0.3 V
V CC = 5.0 ± 0.5 V
0
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Hours
Time,
Years
117.8
47.9
20.4
9.4
Temperature °C
80
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
90
100
110
120
130
140
1
4.2
2.0
1
10
100
1000
1.0
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VH86–2/4
MC74VHC1G86
DC ELECTRICAL CHARACTERISTICS
V CC
T A = 25°C
T A <85°C –55°C<TA<125°C
Symbol
Parameter
Test Conditions
(V) Min Typ Max Min Max Min Max Unit
V IH
Minimum High–Level
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
2.0
1.5
2.1
1.5
2.1
V
V
V
3.15
3.85
3.15
3.85
V IL
Maximum Low–Level
Input Voltage
0.5
0.9
0.5
0.9
0.5
0.9
3.0
4.5
1.35
1.65
1.35
1.65
1.35
1.65
5.5
V OH
Minimum High–Level
Output Voltage
V IN = V IH or V IL
2.0 1.9 2.0
3.0 2.9 3.0
4.5 4.4 4.0
1.9
2.9
4.4
1.9
2.9
4.4
I
OH = – 50 µA
V IN = V IH or V IL
V
IN = V IH or V IL
I OH = –4 mA
OH = –8 mA
V IN = V IH or V IL
OL = 50 µA
3.0 2.58
4.5 3.94
2.48
3.80
2.34
3.66
I
V OL
Maximum Low–Level
Output Voltage
V IN = V IH or V IL
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
I
V
IN = V IH or V IL
I OL = 4 mA
OL = 8 mA
3.0
4.5
0.36
0.36
±0.1
0.44
0.44
±1.0
0.52
0.52
±1.0
I
I IN
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
V IN = 5.5 V or GND 0 to5.5
µA
µA
I CC
V IN = V CC or GND 5.5
2.0
20
40
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns
T A = 25°C
Min Typ Max Min Max Min Max Unit
T A
<85°C –55°C<TA<125°C
Symbol Parameter
Test Conditions
t PLH
t PHL
,
Maximum
V CC = 3.3± 0.3 V C L = 15 pF
C L = 50 pF
4.4
5.7
11.0
14.5
13.0
16.5
15.5 ns
19.5
Propagation Delay,
Input A or B to Y
V CC = 5.0± 0.5 V C L = 15 pF
C L = 50 pF
3.7
4.2
5.5
6.8
8.8
10
8.0
10.0
10
10.0
12.0
C IN
Maximum Input
Capacitance
10
pF
Typical @ 25°C, V CC = 5.0 V
C PD
Power Dissipation Capacitance (Note 6)
10
pF
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC C PD is used to determine the no–
.
2
load dynamic power consumption; P D = C PD • V CC • f in + I CC • V CC
.
VH86–3/4
MC74VHC1G86
Y
*Includes all probe and jig capacitance
Figure 4. Switching Waveforms
Figure 5. Test Circuit
DEVICE ORDERING INFORMATION
Device Nomenclature
Device
Temp
Tape and
Reel Size
Tape &
Package Type
Circuit
Order Number
Device
Package
Suffix
Range
Reel
Technology
Indicator
Function
Identifier
Suffix
MC74VHC1G86DFT1 MC
MC74VHC1G86DFT2 MC
MC74VHC1G86DFT4 MC
MC74VHC1G86DTT1 MC
MC74VHC1G86DTT3 MC
74
74
74
74
74
VHC1G
VHC1G
VHC1G
VHC1G
VHC1G
86
86
86
86
86
DF
DF
DF
DT
DT
T1
T2
T4
T1
T3
SC–70/SC–88A/
SOT–353
178 mm (7 in)
3000 Unit
SC–70/SC–88A/
SOT–353
178 mm (7 in)
3000 Unit
SC–70/SC–88A/
SOT–353
330 mm (13 in)
10,000 Unit
178 mm (7 in)
3000 Unit
SOT–23/TSOPS/
SC–59
SOT–23/TSOPS/
SC–59
330 mm (13 in)
10,000 Unit
VH86–4/4
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