MV2101 [ETL]
Silicon Tuning Diode; 硅调谐二极管
| 型号： | MV2101 |
| 厂家： | 
E-TECH ELECTRONICS LTD |
| 描述： | Silicon Tuning Diode |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACK-
AGE for high volumerequirements of FM Radio and TV tuning and
AFC, general frequency control andtuning applications.They pro-
vide solid–state reliability in replacement of mechanical tuning
methods. Also available in Surface Mount Package up to 33pF.
• High Q
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance —10%
• Complete Typical Design Curves
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
3
ANODE
CATHODE
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
MV21XX MMBV21XXLT1 Unit
Reverse Voltage
V R
I F
30
Vdc
Forward Current
200
mAdc
m W
mW/°C
°C
Device Dissipation @T A = 25°C
Derate above 25°C
P D
280
2.8
225
1.8
Junction Temperature
Storage Temperature Range
DEVICE MARKING
T J
+150
T stg
–55 to +150
°C
MMBV2101LT1=M4G
MMBV2103LT1=4H
MMBV2105LT1=4U
MMBV2107LT1=4W
MMBV2108LT1=4X
MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR=1.0µAdc)
Symbol
Min
Typ
Max
Unit
V (BR)R
30
—
—
Vdc
Reverse Voltage Leakage Current
(VR=25Vdc,TA=25°C)
IR
—
—
—
0.1
—
µAdc
Diode Capacitance Temperature Coefficient
(VR=4.0Vdc,f=1.0MHz)
TCC
280
ppm/°C
I6–1/3
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
C
, Diode Capacitance
T
R, Tuning Ratio
/C
Q, Figure of Merit
= 4.0 Vdc,
T
V
= 4.0 Vdc, f = 1.0 MHz
pF
C
2
V
R
30
R
Device
f = 1.0 MHz
f = 50 MHz
Min
6.1
Nom
6.8
10
Max
7.5
Typ
450
400
400
400
350
300
200
150
100
Min
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.6
Typ
2.7
2.9
2.9
2.9
2.9
3.0
3.0
3.0
3.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
MMBV2101LT1/MV2101
MMBV2103LT1
9.0
11
MV2104
10.8
13.5
19.8
24.3
29.7
42.3
90
12
13.2
16.5
24.2
29.7
36.3
51.7
110
MMBV2105LT1/MV2105
MMBV2107LT1
15
22
MMBV2108LT1/MV2108
MMBV2109LT1/MV2109
MV2111
27
33
47
MV2115
100
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
4.TCC,DIODECAPACITANCETEMPERATURE
1. C T , DIODE CAPACITANCE
~
T CC is guaranteed by comparing CT at
~
COEFFICIENT
(C T = C C + C J ). C T is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
V R=4.0Vdc,f=1.0MHz,T A= – 65°C with CT at V R=4.0Vdc,
f=1.0MHz,T A= + 85°C in the following equation,which
defines TC C:
2. T R, TUNING RATIO
C T(+85°C) – C T(–65°C )
85+65
106
T R is the ratio of C T measured at 2.0 Vdc divided by
C T measured at 30 Vdc.
.
TC C
=
C T(25°C)
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
2πfC
Q =
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length
1/16”.
I6–2/3
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
TYPICAL DEVICE CHARACTERISTICS
1000
500
T
A = 25°C
f = 1.0 MHz
MV2115
200
100
50
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
100
50
1.040
T
A = 125°C
V
R = 2.0Vdc
20
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
10
5.0
V
R = 4.0Vdc
2.0
T
T
A = 75°C
A = 25°C
1.0
.50
V
R = 30Vdc
.20
NORMALIZED TO CT
at T A = 25°C
.10
.05
.02
.01
V
R = (CURVE)
0
5.0
10
15
20
25
30
–75
–50
–25
0
+25
+50
+75
+100 +125
TJ , JUNCTIONTEMPERATURE(°C)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance
versus Junction Temperature
Figure 3. Reverse Current versus
Reverse Bias Voltage
5000
5000
MMBV2101LT1/MV2101
3000
2000
3000
2000
MMBV2109LT1/MV2109
1000
1000
500
300
200
MMBV2101LT1/MV2101
500
300
200
MV2115
100
100
50
MV2115
MMBV2109LT1/MV2109
50
T
A = 25°C
T
V
A = 25°C
30
20
30
20
f = 50 MHz
R = 4.0 Vdc
10
10
10
20
30
50
70
100
200
300
1.0
2.0
3.0
5.0
7.0
10
20 30
f, FREQUENCY (MHz)
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus
Reverse Voltage
Figure 5. Figure of Merit versus
Frequency
I6–3/3
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