15GD120DN2E3224 [EUPEC]
IGBT Power Module; IGBT功率模块
| 型号： | 15GD120DN2E3224 |
| 厂家： | 
EUPEC GMBH |
| 描述： | IGBT Power Module |
| 文件： | 总9页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSM 15 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
V
I
Package
Ordering Code
CE
C
BSM 15 GD 120 DN2
1200V 25A
ECONOPACK 2
ECONOPACK 2K
C67076-A2504-A67
C67070-A2504-A67
BSM 15 GD120DN2E3224 1200V 25A
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
1200
V
CE
CGR
Ω
R
= 20 k
1200
± 20
GE
Gate-emitter voltage
DC collector current
V
GE
I
A
C
T = 25 °C
25
15
C
T = 80 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
50
30
C
T = 80 °C
C
Power dissipation per IGBT
P
W
tot
T = 25 °C
145
C
Chip temperature
T
T
+ 150
°C
j
Storage temperature
-40 ... + 125
stg
≤
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
R
R
0.86
K/W
thJC
thJC
is
≤ 1.5
D
V
-
2500
Vac
mm
16
Clearance
-
11
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
F
sec
-
40 / 125 / 56
1
Oct-20-1997
BSM 15 GD 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 0.6 mA
4.5
5.5
6.5
GE
CE, C
Collector-emitter saturation voltage
CE(sat)
V
V
= 15 V, I = 15 A, T = 25 °C
-
-
2.5
3.1
3
GE
GE
C
j
= 15 V, I = 15 A, T = 125 °C
3.7
C
j
Zero gate voltage collector current
I
mA
nA
CES
V
V
= 1200 V, V = 0 V, T = 25 °C
-
-
0.3
1.2
0.5
-
CE
CE
GE
j
= 1200 V, V = 0 V, T = 125 °C
GE
j
Gate-emitter leakage current
= 20 V, V = 0 V
I
GES
V
-
-
150
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 15 A
5.5
-
-
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
pF
iss
V
-
-
-
1000
150
70
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
GE
2
Oct-20-1997
BSM 15 GD 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 600 V, V = 15 V, I = 15 A
t
ns
d(on)
V
CC
GE
C
Ω
R
= 82
-
-
-
-
55
110
90
Gon
Rise time
= 600 V, V = 15 V, I = 15 A
t
r
V
CC
GE
C
Ω
R
= 82
45
Gon
Turn-off delay time
= 600 V, V = -15 V, I = 15 A
t
d(off)
V
CC
GE
C
Ω
R
= 82
400
70
600
100
Goff
Fall time
= 600 V, V = -15 V, I = 15 A
t
f
V
CC
GE
C
Ω
= 82
R
Goff
Free-Wheel Diode
Diode forward voltage
V
V
F
I = 15 A, V = 0 V, T = 25 °C
-
-
2.4
1.9
2.9
-
F
GE
j
I = 15 A, V = 0 V, T = 125 °C
F
GE
j
Reverse recovery time
I = 15 A, V = -600 V, V = 0 V
t
µs
µC
rr
F
R
GE
di /dt = -800 A/µs, T = 125 °C
-
0.1
-
F
j
Reverse recovery charge
I = 15 A, V = -600 V, V = 0 V
Q
rr
F
R
GE
di /dt = -800 A/µs
F
T = 25 °C
-
-
1
3
-
-
j
T = 125 °C
j
3
Oct-20-1997
BSM 15 GD 120 DN2
Power dissipation
Safe operating area
ƒ
ƒ
P
= (T )
I = (V
)
CE
tot
C
C
≤
≤
parameter: D = 0, T = 25°C , T 150 °C
C j
parameter: T 150 °C
j
10 2
150
W
t
= 11.0µs
p
130
A
120
110
100
90
Ptot
IC
10 1
100 µs
80
70
60
1 ms
10 0
50
40
30
10 ms
20
10
0
10 -1
DC
10 3
0
20
40
60
80
100 120 °C
160
10 0
10 1
10 2
V
TC
VCE
Collector current
Transient thermal impedance IGBT
ƒ
ƒ
I = (T )
Z
= (t )
C
C
th JC
p
≥
≤
parameter: V
15 V , T 150 °C
parameter: D = t / T
GE
j
p
10 0
26
A
K/W
22
IC
ZthJC
20
18
16
14
12
10
8
10 -1
D = 0.50
0.20
10 -2
0.10
0.05
6
0.02
single pulse
0.01
4
2
0
10 -3
0
20
40
60
80
100 120 °C
160
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
TC
tp
4
Oct-20-1997
BSM 15 GD 120 DN2
Typ. output characteristics
Typ. output characteristics
I = f (V
I = f (V
)
)
CE
C
CE
C
parameter: t = 80 µs, T = 25 °C
parameter: t = 80 µs, T = 125 °C
p j
p
j
30
A
30
A
26
24
22
20
18
16
14
12
10
8
26
24
22
20
18
16
14
12
10
8
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
IC
IC
7V
7V
6
6
4
4
2
0
2
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
I = f (V
)
GE
C
parameter: t = 80 µs, V = 20 V
p
CE
30
A
26
24
22
20
18
16
14
12
10
8
IC
6
4
2
0
0
2
4
6
8
10
V
VGE
14
5
Oct-20-1997
BSM 15 GD 120 DN2
Typ. capacitances
Typ. gate charge
ƒ
C = f (V )
V
= (Q
)
CE
GE
Gate
parameter: I
= 15 A
parameter: V = 0 V, f = 1 MHz
C puls
GE
10 1
20
V
nF
16
C
VGE
600 V
800 V
14
12
10
8
10 0
10 -1
10 -2
Ciss
Coss
Crss
6
4
2
0
0
10 20 30 40 50 60 70 80 nC 100
0
5
10
15
20
25
30
V
VCE
40
QGate
Reverse biased safe operating area
= f(V T = 150°C
Short circuit safe operating area
I = f(V ) , T = 150°C
Csc
I
)
,
Cpuls
CE
j
CE
j
parameter: VGE = 15 V
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH
2.5
12
ICpuls/IC
ICsc/IC
8
6
4
1.5
1.0
0.5
0.0
2
0
0
200 400 600 800 1000 1200
V
VCE
1600
0
200 400 600 800 1000 1200
V
VCE
1600
6
Oct-20-1997
BSM 15 GD 120 DN2
Typ. switching time
Typ. switching time
I = f (I ) , inductive load , T = 125°C
t = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 82
par.: V = 600 V, V = ± 15 V, I = 15 A
Ω
CE
10 3
GE
G
CE
10 3
GE
C
tdoff
tdoff
t
t
ns
ns
tdon
tr
10 2
10 2
tr
tdon
tf
tf
10 1
10 1
0
5
10
15
20
25
30
A
IC
40
0
50
100
150
200
300
Ω
RG
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 82 Ω
par.: V = 600V, V = ± 15 V, I = 15 A
CE
GE
G
CE
GE
C
10
10
mWs
mWs
8
7
6
5
4
3
2
8
7
6
5
4
3
2
E
E
Eon
Eon
Eoff
Eoff
1
0
1
0
0
5
10
15
20
25
30
A
IC
40
0
50
100
150
200
300
Ω
RG
7
Oct-20-1997
BSM 15 GD 120 DN2
Forward characteristics of fast recovery
Transient thermal impedance Diode
reverse diode
ƒ
I = f(V )
Z
= (t )
F
F
th JC
p
parameter: D = t / T
parameter: T
p
j
10 1
30
A
K/W
26
10 0
IF
24
22
20
18
16
14
12
10
8
ZthJC
10 -1
Tj=125°C
Tj=25°C
D = 0.50
0.20
10 -2
0.10
0.05
single pulse
10 -3
0.02
6
0.01
4
2
0
10 -4
0.0
0.5
1.0
1.5
2.0
V
3.0
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
VF
tp
8
Oct-20-1997
BSM 15 GD 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 180 g
9
Oct-20-1997
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