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元器件品牌
BSM15GD120DN2E3224
[EUPEC]
IGBT Power Module; IGBT功率模块
元器件型号：
BSM15GD120DN2E3224
生产厂家：
EUPEC GMBH
描述和应用：
IGBT Power Module
IGBT功率模块
双极性晶体管
PDF文件：
总9页 (文件大小：251K)
下载文档：
下载PDF数据表文档文件
型号参数：BSM15GD120DN2E3224参数
查看货源
BSM15GD60DN2
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
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INFINEON
BSM15GP120
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BSM15GP60
Elektrische Eigenschaften / Electrical properties
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BSM15GP602
IGBT Module
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156
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ETC
BSM180C12P2E202
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ROHM
BSM181
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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INFINEON
BSM181(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 36A I(D)
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ETC
BSM181/R
Power Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4
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156
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0
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BSM181F(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 34A I(D)
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156
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14
ETC
BSM181F(C)
Power Field-Effect Transistor, 34A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4
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INFINEON
BSM181FR
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 34A I(D)
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32
ETC
BSM181FR
Power Field-Effect Transistor, 34A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4
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156
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0
INFINEON
BSM181R
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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on line
156
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BSM191
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INFINEON
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